MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP
料号： MD7P19130HSR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $90.59 | $90.59 |
| 10 | $84.2 | $842.00 |
| 100 | $76.95 | $7,695.00 |
| 250 | $71.4 | $17,850.00 |
| 500 | $65.1 | $32,550.00 |
MD7P19130HSR3 概述
An RF power MOSFET is a lateral field-effect transistor optimized for high-frequency, high-power amplification in the megahertz-to-gigahertz range. RF power MOSFETs sit at the top of the power amplifier hierarchy (RF amplifier -> power amplifier -> RF front-end -> wireless base station) and are characterized by output power (W), gain (dB), drain efficiency (%), and adjacent-channel leakage ratio (ACLR, dBc). Compared with bipolar RF transistors, LDMOS offers higher gain, simpler biasing, better thermal stability, and intrinsic matching to 50 ohm systems. MD7P19130HSR3 is the WCDMA-optimized "S" suffix variant, distinguished by tighter linearity for 3GPP signal chains.
Key features include 20 dB typical power gain at 1987.5 MHz, 30% drain efficiency at full output, -36 dBc ACPR at 5 MHz offset in 3.84 MHz W-CDMA channels, and a 7.5 dB peak-to-average ratio (PAR) handling capability. The device is designed for single-carrier operation and includes integrated ESD protection and a thermally enhanced ceramic package capable of dissipating the full 40 W average output continuously when mounted on an adequate heatsink. The 28 V drain bias simplifies integration with existing -48 V telecom plant topologies stepped down through a single DC-DC converter.
The MD7P19130HSR3 is the recommended part for the Doherty final stage and single-ended PA in 1.93-1.99 GHz band (US PCS, UMTS band II) base-station radios. Designers also use it as a driver for higher-power LDMOS finals when additional output headroom is required.
Mounting is straightforward but thermally demanding: the NI-780S-4L package must be bolted to a heatsink with thermal compound, and the RF leads form a 50 ohm microstrip interface. A complete bias sequence (VGGS on before VDDS) is required to prevent device damage, and the input/output match must be optimized for the target frequency sub-band for full W-CDMA ACLR compliance.
直接替换替代料： MD7P19130HSR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MD7P19130HSR3 （相同外形与封装尺寸） ——差异在于 Mounting Type, Package / Case, Technology, Transistor Type, Drain Efficiency.
快速对比工具——选择替代料号进行并排对比：
MD7P19130HR3
✅ 直接替换✓ 有现货
$69.5 / 个
查看数据手册 →MD7P19130HR5
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MD7P19130H
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF7S19130HSR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MD7P19130HSR3 最大额定值与电气特性
| 晶体管类型 | LDMOS (Dual), Lateral N-Channel RF Power MOSFET |
| Technology | NXP HV7 LDMOS |
| Drain-Source Voltage (VDS) Rated | 65 V |
| Operating Drain Voltage (VDD) | 28 V (typical) |
| Frequency Range | 1930 MHz to 1990 MHz |
| Output Power (Pout) | 40 W average (W-CDMA, single-carrier) |
| Power Gain | 20 dB typical at 1987.5 MHz |
| Drain Efficiency | 30% typical at 40 W, 1987.5 MHz |
| Quiescent Drain Current (IDQ) | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | -36 dBc typical |
| Input Signal PAR | 7.5 dB @ 0.01% probability on CCDF |
| Device Output Signal PAR | 6 dB @ 0.01% probability on CCDF |
| 封装 / 外壳 | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged |
| 安装类型 | Chassis-mount (bolt-down) with ceramic lid |
| Operating Mode | Single-carrier W-CDMA, Class AB |
| RoHS 状态 | Compliant |
MD7P19130HSR3 引脚配置
| 引脚 1 | RF Input — 50 ohm RF input, gate bias combined |
| 引脚 2 | Gate Bias (VGGS) — DC gate supply, sequenced on before VDDS |
| 引脚 3 | Drain Bias (VDDS) — 28 V DC drain supply |
| 引脚 4 | RF Output — 50 ohm RF output, drain bias combined |
| 引脚 5 | Flange (Thermal) — Bolt-down heatsink interface, isolated from RF |
| 引脚 6 | Ceramic Lid — Hermetic seal, ground reference |
DC 安全工作区
典型应用
MD7P19130HSR3 适用于 6 应用s: UMTS Band II Base-Station Final Stage, Doherty Power Amplifier for W-CDMA, Single-Ended PA Driver Stage, Repeater and Small-Cell Power Amplifier, Public-Safety Band II Amplifier, Industrial RF Heating and Plasma Generator.
UMTS Band II Base-Station Final Stage
The MD7P19130HSR3 is the reference final-stage LDMOS for 1.93-1.99 GHz UMTS band II (US PCS) base-station power amplifiers. With 40 W average output at 20 dB gain and 30% drain efficiency from a 28 V rail, it meets 3GPP release-99/5 emission masks (-36 dBc ACPR at 5 MHz offset) without external digital predistortion in many designs. The NI-780S-4L ceramic package bolts directly to the PA heatsink and the input/output microstrip interface simplifies 50 ohm matching. Designers use the part in single-ended PAs for small cells and macro base stations where its 7.5 dB PAR handling preserves ACLR margin under real-world W-CDMA loading.
推荐
Doherty Power Amplifier for W-CDMA
In a two-way Doherty configuration for UMTS band II, the MD7P19130HSR3 serves as both the carrier (main) and peaking amplifier device. Its 6 dB output PAR and 20 dB gain match the Doherty load modulation profile, allowing the designer to reach >40% system efficiency at 6 dB back-off from 40 W peak. Combined with a 90-degree offset line and harmonic-tuned matching networks, the part delivers -36 dBc ACPR and -55 dBc at 10 MHz offset to meet 3GPP spectrum-emission requirements. The identical die in both carrier and peaking positions simplifies bias sequencing and reduces BOM cost in macro-cell Doherty PA modules.
推荐
Single-Ended PA Driver Stage
The MD7P19130HSR3 is deployed as a driver stage for higher-power LDMOS final PAs in stacked base-station amplifier chains. Its 20 dB gain and 40 W output cleanly drive 80-100 W finals when paired with an inter-stage attenuator and matching network, with the 30% drain efficiency minimizing thermal load in the driver compartment. The same NI-780S-4L footprint as the finals simplifies PCB layout and allows a common heatsink assembly, reducing mechanical complexity in the radio unit.
推荐
Repeater and Small-Cell Power Amplifier
For 1.93-1.99 GHz indoor small cells, pico repeaters, and RF boosters, the MD7P19130HSR3 provides the necessary 40 W output power in a compact NI-780S-4L ceramic package that integrates with a small heatsink. Its single-carrier W-CDMA tuning simplifies the digital front end and its 28 V drain rail is compatible with the small-cell PoE+48 V input stepped down through a single DC-DC converter. The part's ACPR margin allows operation without DPD, lowering FPGA/DSP cost in low-channel-count small-cell designs.
推荐
Public-Safety Band II Amplifier
Public-safety LTE infrastructure operating in the 1.93-1.99 GHz band uses the MD7P19130HSR3 as a final-stage amplifier for mission-critical P25/LTE base stations. Its -36 dBc ACPR margin and 7.5 dB PAR handling support the high crest-factor signals of LTE public-safety waveforms, while the ceramic NI-780S-4L package meets the long-lifetime reliability requirements of emergency-services infrastructure. The bolted ceramic lid resists thermal cycling and vibration in tower-top installations.
推荐
Industrial RF Heating and Plasma Generator
Industrial RF heating and plasma-generation systems operating in the 1.93-1.99 GHz ISM-adjacent band can use the MD7P19130HSR3 as a continuous-duty power source. Its 40 W average output and 30% efficiency from a 28 V rail provide the energy density needed for plasma ignition and dielectric heating, while the NI-780S-4L bolted ceramic package withstands the high ambient temperatures of industrial enclosures. Designers add harmonic filtering at the output to meet industrial EMC standards.
推荐
推荐产品汇总
工程参考数据： MD7P19130HSR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MD7P19130HR3 | MD7P19130HR5 | MD7P19130H | MRF7S19130HSR3 |
|---|---|---|---|---|---|
| Package | NI-780S-4L (CASE 465M-01) | NI-780S-4L (CASE 465M-01) - same | NI-780S-4L (CASE 465M-01) - same | NI-780S-4L (CASE 465M-01) - same | NI-780S-4L (CASE 465M-01) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz |
| Output Power (W-CDMA) | 40 W avg | 40 W avg | 40 W avg | 40 W avg | 40 W avg |
| Power Gain | 20 dB | 20 dB | 20 dB | 20 dB | 20 dB |
| Drain Efficiency | 30% | 30% | 30% | 30% | 30% |
| ACPR (5 MHz) | -36 dBc | Similar | Similar | Similar | Similar |
| W-CDMA Optimization | Yes (HSR3 single-carrier tuning) | Multi-carrier/CW | Multi-carrier/CW | Base SKU | Yes (MRF prefix RF MOSFET line) |
关键差异点
- Single-carrier W-CDMA linearity tuning （对比 MD7P19130HR3)
- Drop-in NI-780S-4L ceramic package across family （对比 MD7P19130HR5)
- Higher gain than competing GaAs final-stage devices （对比 MRF7S19130HSR3)
设计说明
At 40 W output with 30% drain efficiency from a 28 V rail, approximately 93 W is dissipated as DC heat in the MD7P19130HSR3 junction. The NI-780S-4L ceramic flanged package must be bolted to a heatsink with thermal compound; target a system thermal resistance below 0.3 C/W to keep Tj below 200 C. Estimated: Pdiss = (Pout/eta) - Pout = (40/0.30) - 40 = 93 W. Inadequate heatsinking will cause the device to enter thermal compression and degrade ACPR.
Gate-bias sequencing is mandatory: VGGS must be applied before VDDS to prevent the LDMOS from drawing uncontrolled current during turn-on. Use a sequencer IC or discrete RC network that delays VDDS by 10-50 ms after VGGS reaches the -2.5 V gate-bias threshold. Quiescent current (IDQ = 1250 mA) must be held within +/-50 mA to preserve -36 dBc ACPR per the NXP datasheet.
The NI-780S-4L input and output leads form a 50 ohm microstrip interface that must transition smoothly to the PCB substrate. Use Rogers RO4350B or RO4003C dielectric for the input/output matching networks to minimize loss at 1.9 GHz; FR-4 adds ~0.5 dB loss per match. Keep the gate-bias trace perpendicular to the RF path and decouple VGGS with a 10 uF tantalum plus 0.1 uF ceramic right at the package lead to prevent low-frequency oscillation.
Do not exceed 65 V VDS - transient spikes from drain-feed inductance can punch through the LDMOS even within the SOA curve. Add a 10 uF + 1 uF + 0.1 uF decoupling stack at the VDDS lead with low-ESR ceramic capacitors. Never operate the part without RF input - open-input conditions cause excessive voltage stress and can permanently damage the gate oxide. Add an isolator or load-mismatch protection circuit at the output for production deployments.
合规信息
RoHS compliant per NXP product page; ceramic NI-780S-4L package is lead-free. AEC-Q100 not applicable (RF power MOSFET is not an automotive-qualified IC). Conflict-minerals declaration available from NXP product compliance portal.
