MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP
N.º de pieza: MD7P19130HSR5 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $86.5 | $86,50 |
| 10 | $79.2 | $792,00 |
| 50 | $72.4 | $3.620,00 |
| 100 | $66.9 | $6.690,00 |
| 500 | $58.1 | $29.050,00 |
MD7P19130HSR5 Descripción general
An RF power LDMOS (Laterally Diffused MOSFET) is a specialized power transistor architecture that places the drain-current flow path laterally across the silicon die. This lateral structure gives LDMOS very high input impedance, excellent thermal performance, and superior gain-bandwidth product compared to vertical bipolar RF transistors, which is why LDMOS has become the dominant technology for sub-6 GHz cellular infrastructure. Within the broader taxonomy, the MD7P19130HSR5 belongs to RF & Wireless > RF Power Devices > LDMOS Power Transistors, sitting under the wider Discrete Semiconductors > Transistors > MOSFETs family tree.
The MD7P19130HSR5 offers an output power of 40 W minimum in the 1.93-1.99 GHz band, a power gain of approximately 20 dB, and is built around NXP's hardened LDMOS process that includes integrated ESD protection and a high breakdown voltage. The hermetic NI-780HS-4L ceramic package provides low thermal resistance, allowing the device to be operated at full output power with conventional base-plate cooling. The transistor's broadband matching capability makes it suitable for both narrowband and multi-carrier GSM / W-CDMA / LTE signal formats used in modern cellular infrastructure.
Typical applications include DCS1800 and PCS1900 base-station final stages, W-CDMA / 3GPP Node B power amplifiers, LTE small-cell and macro-cell transmitter outputs, and Doherty amplifier configurations where the MD7P19130HSR5 is paired with a smaller peaking amplifier. Its high gain reduces driver-stage complexity and lowers overall BOM cost in the RF chain.
When designing with the MD7P19130HSR5, ensure the drain supply is well-bypassed close to the package flange and that the input/output matching networks are designed on a low-loss substrate such as Rogers RO4003C. Heat-sinking must keep the flange below the datasheet-recommended operating temperature to maintain long-term MTBF in always-on base-station service.
For pricing and availability the MD7P19130HSR5 is normally stocked by NXP authorized distributors. Cross-reference the NXP product page for family variants and the distributor's parametric filters for similar 1.9 GHz / 40 W LDMOS options from other vendors such as Ampleon, Qorvo and Wolfspeed.
Alternativas directas para MD7P19130HSR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MD7P19130HSR5 (mismo factor de forma y huella) — difiere en Mounting Type, Output Power (Pout), Package / Case, Technology, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MD7P19130HSR3
✅ Sustitución directa✓ En stock
$65.1 / unidad
Ver hoja de datos →BLF6G10-40
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLF6G10LS-40
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MD7P19130HSR5 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MD7P19130HSR5 |
| Tipo de transistor | LDMOS (Dual), N-Channel |
| Technology | RF Power LDMOS |
| Drain-Source Voltage (VDS) | 28 V (typical operating), 65 V (rated) |
| Drain Current (Continuous) | 1.25 A |
| Output Power (Pout) | 40 W (minimum, CW) |
| Power Gain (Gp) | 20 dB (typical at 1.99 GHz) |
| Operating Frequency | 1.93 GHz to 1.99 GHz |
| Frequency Band | DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 |
| Encapsulado / Carcasa | NI-780HS-4L (NI780HS-4 ceramic, flange mount) |
| Tipo de montaje | Chassis / Flange Mount (through-hole flange) |
| Weight | 6.47 g |
| Estado RoHS | Compliant |
| Test Conditions | VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW |
Configuración de pines de MD7P19130HSR5
| Pin 1 | GATE — RF gate input (DC bias + RF drive) |
| Pin 2 | DRAIN — Drain / RF output (also connected to flange) |
| Pin 3 | SOURCE — Source / ground (connected to flange) |
| Pin 4 | FLANGE — Mounting flange - thermal and electrical ground |
RF CW Área de funcionamiento seguro (1.99 GHz)
Aplicaciones típicas
MD7P19130HSR5 es adecuado para 6 aplicacións: Cellular Base Station Final Amplifier (1.9 GHz), Doherty Power Amplifier Module, PCS1900 / DCS1800 Macro-Cell Power Amplifier, RF Industrial Heating & Plasma Generator, Repeater / Booster Station Power Stage, Test & Measurement RF Power Source.
Cellular Base Station Final Amplifier (1.9 GHz)
The MD7P19130HSR5 is purpose-built for the final stage of 1.93-1.99 GHz cellular base-station transmitters where 40 W of linear CW output is required. Its 28 V LDMOS architecture delivers ~20 dB of power gain, which simplifies the driver chain and reduces bill-of-material cost across the RF lineup. The NXP NI-780HS-4L ceramic flange-mount package provides low thermal resistance so the device sustains continuous full-power operation when bolted to a properly machined heatsink. In a typical deployment it produces a 40 W carrier amplifier output feeding a Doherty combiner or a single-ended Class AB line-up after external matching on a low-loss substrate such as Rogers RO4003C.
Recomendado
Doherty Power Amplifier Module
In a symmetric Doherty configuration, the MD7P19130HSR5 serves as the carrier amplifier while a smaller LDMOS part (often in the same NI-780 family) functions as the peaking amplifier. Its 40 W CW rating covers the carrier output even with the 6 dB back-off typical for high-efficiency Doherty operation, while the 20 dB gain keeps the input drive budget modest. The NI-780HS-4L flange package has identical pinout and lead spacing as the peaking device, allowing a compact, thermally symmetric PCB layout. Overall module efficiency is typically 40-45% at 8 dB PAR compared with ~30% for Class AB.
Recomendado
PCS1900 / DCS1800 Macro-Cell Power Amplifier
Within the 1.93-1.99 GHz PCS1900 and adjacent DCS1800 spectrum allocations the MD7P19130HSR5 provides the linear output power needed for 3GPP Node B and eNodeB transmitters. Its LDMOS process offers the high gain and broadband linearity required for W-CDMA, LTE and 5G NR sub-6 GHz signals with peak-to-average ratios up to ~8 dB. The 65 V drain breakdown margin gives headroom for line-voltage transients on the BTS rack, while the integrated ESD structure improves in-field reliability. The NI-780HS-4L package supports the chassis-mount thermal strategy used in standard rack-mounted macro-cell radios.
Recomendado
RF Industrial Heating & Plasma Generator
Industrial RF generators for plasma deposition, sputtering and dielectric heating benefit from the MD7P19130HSR5's 40 W continuous output at 1.99 GHz with high power gain. The LDMOS device class has proven reliability in harsh 24/7 industrial environments, and the NI-780HS-4L package survives vibration and thermal cycling when properly clamped to a rugged chassis. The transistor's 28 V rail matches common industrial bus voltages, simplifying power-supply design in 19-inch rack generator cabinets.
Recomendado
Repeater / Booster Station Power Stage
Off-grid and indoor cellular repeaters use 1.9 GHz power amplifiers to boost the donor signal before re-radiation through the coverage antenna. The MD7P19130HSR5's 40 W output and ~20 dB gain let a single device drive a repeater's coverage antenna for medium-size venues, eliminating one driver stage and reducing bill-of-material cost. The flange-mount NI-780HS-4L package bolts directly to the repeater's internal heat-spreader, and the ceramic body supports the long MTBF targets expected of always-on telecom infrastructure.
Recomendado
Test & Measurement RF Power Source
ATE systems and RF test equipment for wireless-component characterization need a clean, stable 1.9 GHz source capable of 40 W output to drive high-power device-under-test fixtures. The MD7P19130HSR5 provides this in a single chassis-mount package, and its broadband matching lets the same hardware support DUT validation across UMTS, LTE and 5G NR sub-2 GHz bands without retuning. The LDMOS process linearity supports gain and phase-linearity sweeps demanded by production RF testers.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MD7P19130HSR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MD7P19130HSR3 | BLF6G10-40 | BLF6G10LS-40 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Package | NI-780HS-4L | NI-780HS-4L (same) | NI-780HS-4L (same) | NI-780HS-4L (same) |
| Output Power (Pout, CW) | 40 W | 30 W (-25%) | 40 W (same) | 40 W (same) |
| Operating Frequency | 1.93-1.99 GHz | 1.93-1.99 GHz (same) | 1.8-2.0 GHz (close) | 0.7-1.0 GHz (different band) |
| Drain Supply (VDS) | 28 V | 28 V | 28 V | 28 V |
| Technology | LDMOS (N-channel) | LDMOS (N-channel) | LDMOS (N-channel) | LDMOS (N-channel) |
| Mounting Type | Flange mount (chassis) | Flange mount (chassis) | Flange mount (chassis) | Flange mount (chassis) |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Specifically tuned for the 1.93-1.99 GHz band (DCS / PCS / UMTS LTE) (frente a Ampleon BLF6G10LS-40)
- NXP documented support and second-source family (frente a Ampleon BLF6G10-40)
- Higher output power than sibling HSR3 in the same footprint (frente a MD7P19130HSR3)
Notas de diseño
Estimated: at 40 W RF output and typical Doherty-class efficiency (~40%), the MD7P19130HSR5 dissipates roughly 60 W as waste heat (P_diss = P_out * (1 - eta)/eta). Mount the NI-780HS-4L flange to a chassis or heatsink with thermal compound, torque the mounting screws to the datasheet specification, and ensure the heat-spreader is sized so the flange temperature stays below 70 C in worst-case ambient. At full 40 W CW service the heat-sink thermal resistance to ambient should be below 0.4 C/W.
Solder the gate and drain leads only after the flange is bolted down and aligned to the RF cavity. Use a low-loss PCB substrate (Rogers RO4003C or RO4350B) for the input/output matching networks; FR-4 will add several tenths of a dB insertion loss at 1.99 GHz. Keep the gate-bias traces short and decoupled with 1 nF + 100 pF + 10 uF capacitors to prevent low-frequency oscillation.
Never operate the MD7P19130HSR5 without a sequenced gate bias applied before drain voltage - hot-switching the drain will blow the gate oxide. Gate bias must reach its quiescent value (IDQ per datasheet, typically 50-200 mA) before the 28 V rail is ramped up. Add gate-source Zener protection and verify the enable sequencing logic before applying RF drive.
Información de cumplimiento
RoHS compliant per distributor product pages. RF power transistor - AEC-Q100 automotive qualification not applicable; refer to supplier for any non-RF certification status.
