MRF5P21045NR1 - 10W W-CDMA LDMOS RF Power Transistor | NXP
N.º de pieza: MRF5P21045NR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $45 | $45,00 |
| 10 | $40.5 | $405,00 |
| 100 | $36 | $3.600,00 |
| 500 | $32.4 | $16.200,00 |
| 1.000 | $28.8 | $28.800,00 |
MRF5P21045NR1 Descripción general
RF power transistors in the LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) family are specialized MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and high gain/density, sitting within the broader taxonomy of RF power transistors → RF MOSFETs → LDMOS → discrete semiconductors.
The MRF5P21045NR1 features a 65 V drain-source voltage rating, 14.5 dB typical power gain at 2.14 GHz, and integrated dual-path topology that supports Doherty, quadrature, single-ended, and push-pull amplifier configurations. Internal matching and overmolded packaging minimize parasitic losses and provide stable thermal performance.
The device uses NXP's high-voltage HV5 LDMOS process technology, which provides high ruggedness into mismatched loads, making it tolerant of antenna VSWR variations common in field deployments. The 28 V supply rail aligns with mainstream macro-cell base-station architecture, simplifying power supply design.
Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, Doherty final-stage amplifiers for high-efficiency operation, multi-carrier driver stages, and push-pull amplifier modules for wireless infrastructure. The 2110-2170 MHz band covers the UMTS Band I downlink.
For thermal management, the TO-270 plastic package requires a properly soldered PCB land pattern and adequate copper thermal vias to dissipate continuous RF and DC losses. Designers should follow NXP's application note AN1907 for PCB layout and thermal via patterns to ensure long-term reliability.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on standalone manufacturer datasheets or distributor catalog pages.
Alternativas directas para MRF5P21045NR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF5P21045NR2
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6P21190HR6
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF5P21180NR1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF5P21240NR1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF5P21045NR1 Valores máximos y características eléctricas
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual Path) |
| Technology | HV5 LDMOS |
| Frequency Range | 2110 MHz to 2170 MHz |
| Drain-Source Voltage (Vds) | 65 V |
| Test Operating Voltage | 28 V |
| Average Output Power (Pout) | 10 W |
| Power Gain (Gp) | 14.5 dB (typical at 2.14 GHz) |
| Test Signal | 2 x W-CDMA |
| Drain Current at Test (Id) | 500 mA |
| Topology Support | Doherty, Quadrature, Single-Ended, Push-Pull |
| Encapsulado / Carcasa | TO-270 WB-4 (overmolded plastic) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de MRF5P21045NR1
| Pin 1 | Gate — RF input gate bias connection |
| Pin 2 | Drain — RF output and DC drain supply (28 V) |
| Pin 3 | Source — RF and DC ground return (also via flange) |
| Pin 4 | Source/Shield — Secondary source tab for low-inductance grounding |
DC Área de funcionamiento seguro
Aplicaciones típicas
MRF5P21045NR1 es adecuado para 6 aplicacións: W-CDMA Macro-Cell Base Station Final Stage, Doherty Power Amplifier Driver, Multi-Carrier GSM/EDGE Driver Amplifier, Small-Cell / Pico-Cell Power Amplifier, Push-Pull Power Amplifier Module, Wireless Infrastructure Repeater.
W-CDMA Macro-Cell Base Station Final Stage
The MRF5P21045NR1 is specifically designed for UMTS Band I (2110-2170 MHz) macro-cell base-station final-stage power amplifiers. Its 10 W average output under 2x W-CDMA test conditions and 14.5 dB power gain at 28 V provide the headroom and linearity needed for sector power requirements in suburban deployments. The dual-path topology supports Doherty final-stage construction, which improves PA efficiency by 30-40% compared to class-AB at backed-off output levels typical of W-CDMA signals with high PAR.
Recomendado
Doherty Power Amplifier Driver
In Doherty final-stage designs, the MRF5P21045NR1 serves as the carrier amplifier's driver or as the peaking-path transistor in low-power lineups. Its 14.5 dB gain and ruggedness to VSWR mismatches make it well-suited for the Doherty peaking stage, which sees high RF swings and load modulation. The HV5 LDMOS process tolerates the elevated peak voltages that occur during peaking-stage activation, ensuring long-term reliability in field-deployed equipment where antenna impedances can vary widely.
Recomendado
Multi-Carrier GSM/EDGE Driver Amplifier
The MRF5P21045NR1's wide operating bandwidth around 2.14 GHz and dual-path layout make it effective for multi-carrier GSM and EDGE base-station driver stages. Its 14.5 dB gain drives a downstream higher-power final stage, while its TO-270 package provides repeatable thermal performance across densely packed multi-carrier lineups. Designers should bias at class-AB with Id ~500 mA to maintain linearity across the multicarrier composite waveform's high PAPR.
Recomendado
Small-Cell / Pico-Cell Power Amplifier
For small-cell and pico-cell base-station power amplifiers where output power requirements are 1-10 W average, the MRF5P21045NR1 hits the sweet spot of efficiency, linearity, and integration simplicity. Its single 28 V rail operation eliminates the need for complex multi-rail power supplies common in higher-power macro-cell designs. The TO-270 plastic package supports standard SMT assembly processes, reducing manufacturing cost for high-volume small-cell deployments in urban and indoor coverage scenarios.
Recomendado
Push-Pull Power Amplifier Module
The MRF5P21045NR1's dual-path internal topology natively supports push-pull amplifier configurations when paired with a 180-degree hybrid combiner at the input and output. Push-pull operation cancels even-order harmonics, simplifying filter design for broadband multi-standard PAs. The device's matched pair of LDMOS halves deliver excellent amplitude and phase balance, which is critical for the suppression of intermodulation products in multi-carrier amplifier (MCPA) lineups covering UMTS and LTE bands.
Recomendado
Wireless Infrastructure Repeater
W-CDMA signal repeaters deployed at cell edge or indoor coverage zones benefit from the MRF5P21045NR1's 14.5 dB gain in a compact SMT-friendly footprint. The 10 W Pout level supports medium-coverage booster requirements for distributed antenna system (DAS) head-ends. Its LDMOS ruggedness handles the load variations caused by passive splitter/combiner networks in repeater signal paths without damage to the die, ensuring long service life in unattended installations.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF5P21045NR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF5P21045NR2 | MRF6P21190HR6 | MRF5P21180NR1 | MRF5P21240NR1 |
|---|---|---|---|---|---|
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Average) | 10 W | 10 W | 190 W | 180 W | 240 W |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Power Gain | 14.5 dB | 14.5 dB | 15 dB (typical) | 15 dB (typical) | 14 dB (typical) |
| Operating Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Vds Max | 65 V | 65 V | 65 V | 65 V | 65 V |
| Technology | HV5 LDMOS | HV5 LDMOS | HV5 LDMOS | HV5 LDMOS | HV6 LDMOS |
Diferenciadores clave
- Specifically designed for Doherty and push-pull W-CDMA PA topologies (frente a Generic LDMOS transistors)
- 65 V drain-source rating provides substantial overvoltage headroom (frente a Standard 28 V LDMOS parts)
- High 14.5 dB gain reduces driver-stage complexity (frente a Lower-gain competing LDMOS parts)
Notas de diseño
At 10 W RF output and ~20% overall PA efficiency, MRF5P21045NR1 dissipates roughly 40 W as DC plus RF losses at the drain. The TO-270 WB-4 package's thermal pad MUST be soldered to a minimum 4 cm² of 2 oz copper with thermal vias (12-16 vias, 0.3 mm drill) to an internal ground plane. For continuous CW operation, attach a clip-on heatsink or forced-air cooling to keep base-plate temperature below 100°C, preserving long-term LDMOS reliability per NXP AN1907.
Use a 4-layer PCB stack-up with the top layer dedicated to RF microstrip traces (50 Ω controlled impedance on standard FR4, Er=4.2). Keep gate and drain traces short and isolated; place DC blocking and bypass capacitors (100 pF and 10 nF) within 1 mm of the device leads. The drain tab requires low-inductance grounding - use multiple thermal vias and short source return paths. Per NXP AN1907, maintain 50 Ω impedance throughout the matching network.
Do not exceed 65 V Vds or operate above 200°C junction temperature - both cause irreversible LDMOS damage. Avoid running the device into open-circuit loads: even brief VSWR excursions above 10:1 can degrade long-term reliability. Ensure the gate bias network limits Vgs to within ±20 V during transients. Always sequence gate voltage before drain voltage during power-up to prevent in-rush currents that can trigger device oscillation or burnout.
Stability of LDMOS power amplifiers depends critically on eliminating low-frequency parasitic resonances below 500 MHz. Place ferrite beads on the drain supply feed to suppress VCO oscillations, and add small gate resistors (10-50 Ω) for input-stage Q damping. Per NXP AN198A, low-frequency instability can occur even when high-frequency performance is excellent, so add gate-series resistance and proper drain-feed network filtering as a baseline precaution.
Información de cumplimiento
RoHS compliant and lead-free per NXP product page. Not subject to AEC-Q100 - this is an infrastructure/base-station RF part, not an automotive component. Conflict-minerals compliant per NXP CMRT filings.
