MRF5P21045NR1 - 10W W-CDMA LDMOS RF Power Transistor | NXP
부품 번호: MRF5P21045NR1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $45 | $45.00 |
| 10 | $40.5 | $405.00 |
| 100 | $36 | $3,600.00 |
| 500 | $32.4 | $16,200.00 |
| 1,000 | $28.8 | $28,800.00 |
MRF5P21045NR1 개요
RF power transistors in the LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) family are specialized MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and high gain/density, sitting within the broader taxonomy of RF power transistors → RF MOSFETs → LDMOS → discrete semiconductors.
The MRF5P21045NR1 features a 65 V drain-source voltage rating, 14.5 dB typical power gain at 2.14 GHz, and integrated dual-path topology that supports Doherty, quadrature, single-ended, and push-pull amplifier configurations. Internal matching and overmolded packaging minimize parasitic losses and provide stable thermal performance.
The device uses NXP's high-voltage HV5 LDMOS process technology, which provides high ruggedness into mismatched loads, making it tolerant of antenna VSWR variations common in field deployments. The 28 V supply rail aligns with mainstream macro-cell base-station architecture, simplifying power supply design.
Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, Doherty final-stage amplifiers for high-efficiency operation, multi-carrier driver stages, and push-pull amplifier modules for wireless infrastructure. The 2110-2170 MHz band covers the UMTS Band I downlink.
For thermal management, the TO-270 plastic package requires a properly soldered PCB land pattern and adequate copper thermal vias to dissipate continuous RF and DC losses. Designers should follow NXP's application note AN1907 for PCB layout and thermal via patterns to ensure long-term reliability.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on standalone manufacturer datasheets or distributor catalog pages.
드롭인 대체품: MRF5P21045NR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF5P21045NR2
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF6P21190HR6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5P21180NR1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF5P21240NR1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF5P21045NR1 최대 정격 & 전기적 특성
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual Path) |
| Technology | HV5 LDMOS |
| Frequency Range | 2110 MHz to 2170 MHz |
| Drain-Source Voltage (Vds) | 65 V |
| Test Operating Voltage | 28 V |
| Average Output Power (Pout) | 10 W |
| Power Gain (Gp) | 14.5 dB (typical at 2.14 GHz) |
| Test Signal | 2 x W-CDMA |
| Drain Current at Test (Id) | 500 mA |
| Topology Support | Doherty, Quadrature, Single-Ended, Push-Pull |
| 패키지 / 케이스 | TO-270 WB-4 (overmolded plastic) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
MRF5P21045NR1 핀 구성
| 핀 1 | Gate — RF input gate bias connection |
| 핀 2 | Drain — RF output and DC drain supply (28 V) |
| 핀 3 | Source — RF and DC ground return (also via flange) |
| 핀 4 | Source/Shield — Secondary source tab for low-inductance grounding |
DC 안전 동작 영역
일반적인 애플리케이션
MRF5P21045NR1 적합 용도: 6 애플리케이션s: W-CDMA Macro-Cell Base Station Final Stage, Doherty Power Amplifier Driver, Multi-Carrier GSM/EDGE Driver Amplifier, Small-Cell / Pico-Cell Power Amplifier, Push-Pull Power Amplifier Module, Wireless Infrastructure Repeater.
W-CDMA Macro-Cell Base Station Final Stage
The MRF5P21045NR1 is specifically designed for UMTS Band I (2110-2170 MHz) macro-cell base-station final-stage power amplifiers. Its 10 W average output under 2x W-CDMA test conditions and 14.5 dB power gain at 28 V provide the headroom and linearity needed for sector power requirements in suburban deployments. The dual-path topology supports Doherty final-stage construction, which improves PA efficiency by 30-40% compared to class-AB at backed-off output levels typical of W-CDMA signals with high PAR.
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Doherty Power Amplifier Driver
In Doherty final-stage designs, the MRF5P21045NR1 serves as the carrier amplifier's driver or as the peaking-path transistor in low-power lineups. Its 14.5 dB gain and ruggedness to VSWR mismatches make it well-suited for the Doherty peaking stage, which sees high RF swings and load modulation. The HV5 LDMOS process tolerates the elevated peak voltages that occur during peaking-stage activation, ensuring long-term reliability in field-deployed equipment where antenna impedances can vary widely.
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Multi-Carrier GSM/EDGE Driver Amplifier
The MRF5P21045NR1's wide operating bandwidth around 2.14 GHz and dual-path layout make it effective for multi-carrier GSM and EDGE base-station driver stages. Its 14.5 dB gain drives a downstream higher-power final stage, while its TO-270 package provides repeatable thermal performance across densely packed multi-carrier lineups. Designers should bias at class-AB with Id ~500 mA to maintain linearity across the multicarrier composite waveform's high PAPR.
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Small-Cell / Pico-Cell Power Amplifier
For small-cell and pico-cell base-station power amplifiers where output power requirements are 1-10 W average, the MRF5P21045NR1 hits the sweet spot of efficiency, linearity, and integration simplicity. Its single 28 V rail operation eliminates the need for complex multi-rail power supplies common in higher-power macro-cell designs. The TO-270 plastic package supports standard SMT assembly processes, reducing manufacturing cost for high-volume small-cell deployments in urban and indoor coverage scenarios.
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Push-Pull Power Amplifier Module
The MRF5P21045NR1's dual-path internal topology natively supports push-pull amplifier configurations when paired with a 180-degree hybrid combiner at the input and output. Push-pull operation cancels even-order harmonics, simplifying filter design for broadband multi-standard PAs. The device's matched pair of LDMOS halves deliver excellent amplitude and phase balance, which is critical for the suppression of intermodulation products in multi-carrier amplifier (MCPA) lineups covering UMTS and LTE bands.
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Wireless Infrastructure Repeater
W-CDMA signal repeaters deployed at cell edge or indoor coverage zones benefit from the MRF5P21045NR1's 14.5 dB gain in a compact SMT-friendly footprint. The 10 W Pout level supports medium-coverage booster requirements for distributed antenna system (DAS) head-ends. Its LDMOS ruggedness handles the load variations caused by passive splitter/combiner networks in repeater signal paths without damage to the die, ensuring long service life in unattended installations.
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추천 제품 요약
엔지니어링 참조 데이터: MRF5P21045NR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF5P21045NR2 | MRF6P21190HR6 | MRF5P21180NR1 | MRF5P21240NR1 |
|---|---|---|---|---|---|
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Average) | 10 W | 10 W | 190 W | 180 W | 240 W |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Power Gain | 14.5 dB | 14.5 dB | 15 dB (typical) | 15 dB (typical) | 14 dB (typical) |
| Operating Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Vds Max | 65 V | 65 V | 65 V | 65 V | 65 V |
| Technology | HV5 LDMOS | HV5 LDMOS | HV5 LDMOS | HV5 LDMOS | HV6 LDMOS |
주요 차별점
- Specifically designed for Doherty and push-pull W-CDMA PA topologies (vs Generic LDMOS transistors)
- 65 V drain-source rating provides substantial overvoltage headroom (vs Standard 28 V LDMOS parts)
- High 14.5 dB gain reduces driver-stage complexity (vs Lower-gain competing LDMOS parts)
설계 노트
At 10 W RF output and ~20% overall PA efficiency, MRF5P21045NR1 dissipates roughly 40 W as DC plus RF losses at the drain. The TO-270 WB-4 package's thermal pad MUST be soldered to a minimum 4 cm² of 2 oz copper with thermal vias (12-16 vias, 0.3 mm drill) to an internal ground plane. For continuous CW operation, attach a clip-on heatsink or forced-air cooling to keep base-plate temperature below 100°C, preserving long-term LDMOS reliability per NXP AN1907.
Use a 4-layer PCB stack-up with the top layer dedicated to RF microstrip traces (50 Ω controlled impedance on standard FR4, Er=4.2). Keep gate and drain traces short and isolated; place DC blocking and bypass capacitors (100 pF and 10 nF) within 1 mm of the device leads. The drain tab requires low-inductance grounding - use multiple thermal vias and short source return paths. Per NXP AN1907, maintain 50 Ω impedance throughout the matching network.
Do not exceed 65 V Vds or operate above 200°C junction temperature - both cause irreversible LDMOS damage. Avoid running the device into open-circuit loads: even brief VSWR excursions above 10:1 can degrade long-term reliability. Ensure the gate bias network limits Vgs to within ±20 V during transients. Always sequence gate voltage before drain voltage during power-up to prevent in-rush currents that can trigger device oscillation or burnout.
Stability of LDMOS power amplifiers depends critically on eliminating low-frequency parasitic resonances below 500 MHz. Place ferrite beads on the drain supply feed to suppress VCO oscillations, and add small gate resistors (10-50 Ω) for input-stage Q damping. Per NXP AN198A, low-frequency instability can occur even when high-frequency performance is excellent, so add gate-series resistance and proper drain-feed network filtering as a baseline precaution.
규정 준수 정보
RoHS compliant and lead-free per NXP product page. Not subject to AEC-Q100 - this is an infrastructure/base-station RF part, not an automotive component. Conflict-minerals compliant per NXP CMRT filings.
