MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP
N.º de pieza: MRF5S21130HSR5 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $48.5 | $48,50 |
| 10 | $44.2 | $442,00 |
| 100 | $40.1 | $4.010,00 |
| 500 | $36.85 | $18.425,00 |
| 1.000 | $33.4 | $33.400,00 |
MRF5S21130HSR5 Descripción general
LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant RF power transistor technology for wireless infrastructure base stations. LDMOS devices combine high RF output power, high breakdown voltage, excellent thermal stability, and superior gain at UHF/microwave frequencies compared to earlier bipolar or GaAs alternatives. Within the amplifier hierarchy, LDMOS transistors sit downstream from the modulator/driver and upstream of the output band-pass filter and antenna combiner; their high drain efficiency directly determines the base station's OPEX and thermal design budget.
The MRF5S21130HSR5 delivers 13.5 dB typical gain at 2.14 GHz, 28 V VDD, and 1.2 A bias, with 28 W P1dB-class CW output designed for Doherty and push-pull final stages. The device features a gold metallization system for reliability under high thermal cycling, an integrated ESD protection network, and an industry-standard gate bias arrangement compatible with automatic bias controllers. Compared to legacy bipolar parts, the LDMOS die offers higher gain-bandwidth product and reduced memory effects, simplifying DPD (digital pre-distortion) correction in modern linearized transmitters.
NXP recommends 28 V operating drain bias to leverage the simultaneous optimum efficiency and gain point; lowering VDD reduces Pout and gain, while raising it risks SOA violation under VSWR mismatch. The part is characterized for W-CDMA, TD-SCDMA, and multi-carrier GSM/EDGE drive signals. Reference designs include symmetrical Doherty PA layouts at 2.14 GHz targeting >40% drain efficiency at 8 dB PAR.
Typical applications are W-CDMA / LTE base station final-stage PAs operating in the 2110-2170 MHz downlink band, driver stages for higher-power Doherty amplifiers, and multi-carrier power amplifiers (MCPAs) for sectorized cellular sites. The 13.5 dB gain and 28 W Pout profile suit macro-cell base stations and small-cell remote radio heads requiring surface-mountable ceramic packaging.
When designing with this part, follow NXP's recommended gate bias sequencing and use adequate baseplate or PCB copper thermal management; the NI-880S package requires a matched impedance microstrip launch on the drain, gate, and RF output pads. Designers should consult the supplied MRF5S21130 reference design for the bias-T, decoupling, and harmonic filter topology.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone datasheet, helping engineers select, source, and qualify the MRF5S21130HSR5 faster.
Alternativas directas para MRF5S21130HSR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF5S21130HSR5 (mismo factor de forma y huella) — difiere en Manufacturer, Mounting Type, Operating Frequency, Package / Case, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF8S21130HSR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF5S21130H
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8S21130HR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6S21130HR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF5S21130HS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF5S21130HSR5 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale, Motorola) |
| Part Number | MRF5S21130HSR5 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Series | RF MOSFET Line / HV5 |
| Operating Frequency | 2.11 GHz to 2.17 GHz |
| Test Voltage (Vdd) | 28 V |
| Test Current (Idq) | 1.2 A |
| Power Output (Pout) | 28 W (CW) |
| Power Gain | 13.5 dB (typical) |
| Drain-Source Voltage (Vdss Rated) | 65 V |
| Encapsulado / Carcasa | NI-880S ceramic |
| Tipo de montaje | Surface Mount (SMT) with ceramic body |
| Application | W-CDMA base station, TDMA/CDMA, multi-carrier amplifier |
| Status | Obsolete (last-time-buy windows closed at authorized distributors) |
| Tape and Reel Pack | R5 suffix = 500-piece reel |
Configuración de pines de MRF5S21130HSR5
| Pin 1 | Gate — RF input gate lead; connect to gate bias network and input matching network |
| Pin 2 | Drain — RF output drain lead (chimney-style output); connect to drain supply and output matching network |
| Pin Flange | Source / Thermal — Source ground and thermal pad; mount to heat-spreader with thermal interface material |
Área de funcionamiento seguro - MRF5S21130HSR5
Aplicaciones típicas
MRF5S21130HSR5 es adecuado para 6 aplicacións: W-CDMA Base Station Final-Stage PA, Doherty Power Amplifier Driver, Multi-Carrier Power Amplifier (MCPA), Cellular Repeater Output Stage, Industrial RF Heating / Drying, Test & Measurement Power Amplifier.
W-CDMA Base Station Final-Stage PA
The MRF5S21130HSR5's 2.11-2.17 GHz operating band and 28 W CW output with 13.5 dB gain at 28 V bias make it a direct fit for W-CDMA base station final-stage power amplifiers in the cellular downlink band. Used at the output of a DPD-driven transmitter chain, the device contributes the bulk of the RF output power that determines sector coverage. Its LDMOS architecture delivers >40 percent drain efficiency in Doherty mode at 8 dB PAR, while the 65 V Vdss rating provides headroom against antenna mismatch events.
Recomendado
Doherty Power Amplifier Driver
As a driver for higher-power Doherty PAs, the MRF5S21130HSR5's 13.5 dB typical gain is sufficient to boost a 2 W peak main-amplifier input to 28 W saturated at the peaking-amp input port. Placed between the DPA splitter and the peaking transistor, the part maintains phase linearity and flat gain across the 2110-2170 MHz band. The NXP HV5 family bias flexibility lets the driver be run at lower Idq in class-AB, reducing chain-wide current draw in idle moments of multi-carrier traffic.
Recomendado
Multi-Carrier Power Amplifier (MCPA)
Multi-carrier amplifier base stations require linearity across multiple simultaneous CDMA / GSM carriers; the MRF5S21130HSR5's proven MRF5S LDMOS die delivers intermodulation performance suitable for 4-carrier MCPA outputs in the 2110-2170 MHz band. Its thermal performance in the NI-880S package supports continuous multi-carrier drive without junction overheating. A bias-controlled MCPA reference design biases the part at 1.2 A Idq with adaptive bias to optimize efficiency at low traffic levels.
Recomendado
Cellular Repeater Output Stage
The MRF5S21130HSR5 is a good output-stage match for indoor or picocell repeaters that boost W-CDMA signals in the 2110-2170 MHz downlink to fill coverage gaps. Its 28 W Pout handles small-cell sector requirements, and the NI-880S ceramic package enables surface-mount manufacturing typical of compact repeater modules. Bias is set at 28 V via a switching supply, with the gate network tuned for the specific gain target and linearity requirement of the repeater chain.
Recomendado
Industrial RF Heating / Drying
Beyond cellular, the MRF5S21130HSR5's 28 W CW power at 2.11-2.17 GHz supports industrial RF heating and drying applications such as plastic preheating and selective moisture drying in the ISM-adjacent 2.1 GHz band. The rugged LDMOS die survives antenna mismatch events that are common when drying materials of varying dielectric constant. Engineers must add harmonic filtering and shielding to meet industrial EMI/EMC limits; the part itself is characterized for continuous CW operation.
Recomendado
Test & Measurement Power Amplifier
Test instrument designers use the MRF5S21130HSR5 in 2.1 GHz band test amplifiers for component characterization, antenna range measurements, and EMC test sources. The 13.5 dB gain and 28 W output support typical gain and Pout sweeps on cellular PA devices under test. The part's 65 V breakdown voltage gives headroom for CW stress testing at elevated power levels. An NXP reference-design Doherty evaluation board can serve as the starting point for test PA development.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF5S21130HSR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF8S21130HSR5 | MRF5S21130H | MRF8S21130HR5 | MRF6S21130HR5 | MRF5S21130HS |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S ceramic | NI-880S ceramic - same | NI-880S ceramic - same | NI-880S ceramic - same | NI-880S ceramic - same | NI-880S ceramic - same |
| Frequency Band | 2.11 GHz - 2.17 GHz | 2.11 GHz - 2.17 GHz | 2.11 GHz - 2.17 GHz | 2.11 GHz - 2.17 GHz | 2.11 GHz - 2.17 GHz | 2.11 GHz - 2.17 GHz |
| Output Power (Pout) | 28 W | 28 W | 28 W | 28 W | 28 W | 28 W |
| Power Gain | 13.5 dB | 13.5 dB | 13.5 dB | 13.5 dB | 12 dB | 13.5 dB |
| Drain Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Voltage (Vdss) | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| LDMOS Generation | MRF5S (HV5) | MRF8S (newer gen) | MRF5S (HV5) - identical | MRF8S (newer gen) | MRF6S (older gen) | MRF5S (HV5) - identical |
| Packaging | Tape & Reel (R5, 500 pcs) | Tape & Reel | Tray | Tape & Reel (R5) | Tape & Reel (R5) | Bulk sample pack |
Diferenciadores clave
- Wide 2.11-2.17 GHz operating band with 13.5 dB typical power gain (frente a MRF6S21130HR5)
- Same NI-880S package footprint as successor MRF8 generation (frente a MRF8S21130HSR5)
- 65 V Vdss rating with proven HV5 LDMOS die heritage (frente a Non-NXP LDMOS alternates)
- Tape-and-reel packaging (R5 suffix) for high-volume SMT (frente a MRF5S21130H (tray))
Notas de diseño
The NI-880S package dissipates continuous 28 W RF power plus the I*V loss between VDD (28 V) and the drain RF swing, giving an estimated total waste heat of 15-25 W during CW operation. Mount the ceramic flange to a copper or aluminum carrier with 0.5 mm indium thermal interface material; insufficient thermal spreading pushes the junction past 200 C, accelerating MTTF loss. Add a thermocouple to the flange during prototype characterization to verify heat-spreader sizing. Provide >5 square inches of copper spreader for natural-convection designs, or forced-air cooling for sealed enclosures.
Use 50-ohm microstrip launches on RO4350B or similar high-frequency substrate for the gate and drain RF landings; the NI-880S leads are too long for direct-launch into standard FR-4 above 2 GHz. Place the gate and drain bias-T networks within 5 mm of the package leads to minimize parasitic inductance, and use a multi-stage quarter-wave transformer for output matching. Place a 10 nF and 100 pF decoupling pair on the drain bias feed, as close to the ceramic chimney as physically possible, to suppress VDD ripple that would otherwise leak into the output spectrum.
Do not exceed the 65 V Vdss rating during antenna VSWR transients; even a brief 10:1 VSWR event at 28 V bias can generate >50 V peaks at the drain and risk SOA violation. Implement a drain-voltage clamp or foldback circuit at the regulator stage for failsafe shutdown. Also avoid running the MRF5S21130HSR5 below Idq = 200 mA for CW applications; insufficient bias current degrades linearity. Recommended static bias is 1.0-1.4 A Idq at 28 V VDD for class-AB operation in Doherty mode.
Keep gate and drain traces separated by at least 3x line width to prevent cross-talk and spurious oscillation common in high-gain RF power stages. Use a continuous ground plane on the top layer stitched with vias around the NI-880S flange mounting pads. Avoid running digital or low-frequency traces beneath the RF microstrip; if unavoidable, use a top-layer ground bridge to shield the RF path. Drain-side harmonic filter (low-pass or band-pass) should start within 5 mm of the output lead to maximize second-harmonic rejection.
Información de cumplimiento
Early MRF5S21130HSR5 lots used tin-lead (SnPb) ceramic metallization for hermetic reliability; these are non-RoHS. Verify lot-specific C of C with NXP for compliance status of any individual reel. AEC-Q100 is not applicable - this is a telecom infrastructure part, not an automotive component. Reach compliance per supplier statement.
