MRF5S21130HSR5 vs MRF5S21100HSR5 Comparación
Comparación detallada lado a lado de MRF5S21130HSR5 por NXP Semiconductors y MRF5S21100HSR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MRF5S21100HSR5 ✓ ActivoComparación de especificaciones
| Parámetro | MRF5S21130HSR5 | MRF5S21100HSR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $33,40 | $19,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale, Motorola) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S21130HSR5 | — |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET |
| Series | RF MOSFET Line / HV5 | — |
| Operating Frequency | 2.11 GHz to 2.17 GHz | 2.16 GHz to 2.17 GHz |
| Test Voltage (Vdd) | 28 V | — |
| Test Current (Idq) | 1.2 A | — |
| Power Output (Pout) | 28 W (CW) | — |
| Power Gain | 13.5 dB (typical) | 13.5 dB (typical) |
| Drain-Source Voltage (Vdss Rated) | 65 V | — |
| Encapsulado / Carcasa | NI-880S ceramic | NI-780S (ceramic flange-mount) |
| Tipo de montaje | Surface Mount (SMT) with ceramic body | Chassis / Flange Mount (through-hole RF) |
| Application | W-CDMA base station, TDMA/CDMA, multi-carrier amplifier | — |
| Status | Obsolete (last-time-buy windows closed at authorized distributors) | — |
| Tape and Reel Pack | R5 suffix = 500-piece reel | — |
| Orderable Lead-Free Status | [DATA_NEEDED: lead-free status from NXP PCN] | — |
| Part Status | — | Active |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Drain-to-Source Voltage (Vdss) Max | — | 65 V |
| Test Supply Voltage | — | 28 V |
| Output Power (Pout) | — | 23 W (CW) |
| Drain Current (Id) | — | 1.05 A |
| Rango de temperatura de funcionamiento | — | -40C to +150C (junction) |
| Estado RoHS | — | [DATA_NEEDED: RoHS status from NXP product page] |
| Lead-Free | — | [DATA_NEEDED: lead-free finish] |