MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP
N.º de pieza: MRF6S21100NBR1 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38 | $38,00 |
| 10 | $35.5 | $355,00 |
| 100 | $30 | $3.000,00 |
| 250 | $27.5 | $6.875,00 |
| 500 | $25 | $12.500,00 |
MRF6S21100NBR1 Descripción general
An RF power MOSFET is a specialized discrete transistor optimized to deliver sustained RF output power at high efficiency. The term LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) refers to the silicon process architecture in which the drain current flows laterally under the gate, an arrangement that delivers high breakdown voltage, high gain, and good thermal stability for high-power RF amplification. In the cellular base-station hierarchy, this places the MRF6S21100NBR1 in the final-stage power amplifier (PA) chain, where it amplifies a low-level modulated RF signal up to a multi-watt level before reaching the antenna filter and radiating element.
Key parameters include a 28 V drain supply rating, 1.05 A typical operating current at Pout of 23 W, 14.5 dB typical power gain, and operation from 2110 to 2170 MHz. The device supports pulsed and continuous operation across TD-SCDMA, W-CDMA, and multi-carrier waveforms, and includes internal ESD protection and integrated gate-source clamping. Thermal resistance is optimized for base-station heatsink mounting, with the plastic over-molded WB-4 package providing a flat top-side surface for direct thermal compound attachment.
Typical applications include the output stage of W-CDMA and LTE cellular base stations operating in the 2.11-2.17 GHz UMTS Band I (uplink PA in repeaters or small-cell final stages), TD-SCDMA driver amplifiers, multicarrier power amplifiers for combined-sector transmitters, and PCS/cellular radio final-stage linear amplifiers.
When designing with this device, ensure the drain voltage stays within the 28 V typical bias range (32 V absolute maximum), maintain adequate gate-bias sequencing during power-up to avoid uncontrolled drain current, and provide a low-inductance PCB-to-heatsink thermal path. Always discharge input bias networks before handling, as LDMOS devices are static-sensitive.
Alternativas directas para MRF6S21100NBR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF6S21100NBR1 (mismo factor de forma y huella) — difiere en Manufacturer, Mounting Type, Package / Case, Technology, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6S21100NR1
✅ Sustitución directa✓ En stock
$21.24 / unidad
Ver hoja de datos →MRF6S21100NBR1
✅ Sustitución directa✓ En stock
$25 / unidad
Ver hoja de datos →MRF6S21100N
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6S21100NBR1 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Tipo de transistor | N-Channel Enhancement-Mode LDMOS (Lateral MOSFET) |
| Operating Frequency Range | 2110 MHz to 2170 MHz |
| Drain Supply Voltage (Typical) | 28 V |
| Pout (Average, W-CDMA) | 23 W |
| Power Gain (Typical) | 14.5 dB |
| Operating Current (at Pout) | 1.05 A |
| Quiescent Current (IDQ, Typical) | 1600 mA |
| Drain Voltage Rated | 68 V |
| Encapsulado / Carcasa | TO-272 WB-4 (plastic over-molded) |
| Supplier Device Package | TO-272BB |
| Tipo de montaje | Surface Mount / Flange Mount with PCB thermal pad |
| Technology | LDMOS, enhancement-mode |
| Application | W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage |
| Part Status | Obsolete |
Configuración de pines de MRF6S21100NBR1
| Pin 1 | GATE — Gate input - apply bias voltage to control drain current |
| Pin 2 | DRAIN — Drain supply - connect to VDD (28 V typ), RF output |
| Pin 3 | SOURCE — Source terminal - ground reference and RF input return |
| Pin 4 | FLANGE — Flange / thermal pad - mount directly to heatsink |
RF Load-Pull Área de funcionamiento seguro (2110-2170 MHz, 28V)
Aplicaciones típicas
MRF6S21100NBR1 es adecuado para 6 aplicacións: W-CDMA Base Station Final-Stage PA, TD-SCDMA Cellular Amplifier, Multicarrier Cellular Power Amplifier, PCS/Cellular Radio Repeater PA, WLL (Wireless Local Loop) Base Station, Driver Stage for High-Power Broadcast PA.
W-CDMA Base Station Final-Stage PA
The MRF6S21100NBR1 delivers 23 W average Pout at 2110-2170 MHz with 14.5 dB gain at 28 V, matching the IMT-2000 UMTS Band I downlink requirements for macro-cell base-station transmitters. In a typical Class-AB Doherty or single-ended final stage, it produces 2-carrier W-CDMA linear power with adjacent-channel-leakage-ratio (ACLR) margin suitable for 3GPP spec compliance. Its LDMOS architecture keeps quiescent current manageable at high average power. Designers gate-bias before applying drain voltage to avoid destructive current overshoot.
Recomendado
TD-SCDMA Cellular Amplifier
For TD-SCDMA base-station transmitters operating in the 2010-2025 MHz and 2110-2170 MHz sub-bands, the MRF6S21100NBR1 is rated for the high peak-to-average ratios encountered with TD-SCDMA burst signals. Operating at 28 V VDD with 1.05 A nominal bias, it provides the linear headroom required for time-division burst amplification without spectral regrowth that violates China-mobile TD-SCDMA mask specs. Should be paired with pre-distortion linearizers for best spectral performance.
Recomendado
Multicarrier Cellular Power Amplifier
In multicarrier power amplifiers (MCPAs) combining multiple CDMA or LTE carriers at the base-station antenna, the MRF6S21100NBR1's 23 W average power and 14.5 dB gain support 4-carrier combining at 5 W per carrier without output combining networks. Its thermal design is compatible with forced-air heatsinks at base-station installations. Engineers should derate Pout by approximately 1 dB per additional carrier to maintain linearity, as intermodulation products scale with the number of combined carriers.
Recomendado
PCS/Cellular Radio Repeater PA
In PCS and cellular radio repeaters amplifying the downlink 2110-2170 MHz signal in tunnels or rural coverage gaps, the MRF6S21100NBR1 provides the final-stage power amplification needed to reach 10 W EIRP from a single-transmitter unit. The TO-272 WB-4 plastic package is suitable for the smaller form factor of repeater enclosures. Operation at 28 V matches standard repeater DC-distribution rails. External isolators are recommended at the output to protect against antenna-mismatch-induced load-pull damage.
Recomendado
WLL (Wireless Local Loop) Base Station
For fixed-wireless-access (WLL) base-station final-stage amplifiers serving customer-premises terminals, the MRF6S21100NBR1's 23 W output matches typical WLL coverage cell sizes. The LDMOS process offers high reliability in outdoor pole-mounted installations where ambient temperatures can swing widely; the device's plastic over-molded package provides humidity tolerance consistent with IP66 outdoor enclosures.
Recomendado
Driver Stage for High-Power Broadcast PA
When used as a driver for higher-power tubes or solid-state stages in UHF-band broadcast transmitters requiring 2110-2170 MHz drivers, the MRF6S21100NBR1's 14.5 dB gain eliminates the need for a separate pre-driver stage. Operating at 28 V, the driver drives a downstream 50-200 W final stage that can be either an LD-MOS part like the NXP MRF13750H or a vacuum tube amplifier. Careful attention to the inter-stage matching network is required to maintain flat group delay.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6S21100NBR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6S21100NR1 | MRF6S21100N | MRF8S21100HSR3 |
|---|---|---|---|---|
| Package | TO-272 WB-4 | TO-272 WB-4 (same) | TO-272 WB-4 (same) | TO-270 HS-3 (different - PCB rework needed) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Average, W-CDMA) | 23 W | 23 W | 23 W | 23 W (same power, higher efficiency) |
| Operating Frequency | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Drain Voltage (Typical) | 28 V | 28 V | 28 V | 28 V |
| Power Gain (Typical) | 14.5 dB | 14.5 dB | 14.5 dB | higher gain (newer generation) |
| Operating Current (Pout, Typical) | 1.05 A | 1.05 A | 1.05 A | lower Id for same Pout (higher efficiency) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Active (current production) |
Diferenciadores clave
- True pin-to-pin drop-in compatibility in same TO-272 WB-4 package (frente a MRF8S21100HSR3)
- Higher-efficiency successor option when PCB rework is acceptable (frente a MRF8S21100HSR3)
- Higher-power option in same band for amplifier chains needing >23 W (frente a MRF6S21120HSR3)
Notas de diseño
The TO-272 WB-4 plastic over-molded package is designed for direct flange-mount heatsink attachment. Apply a thin, uniform layer of thermal compound (such as Dow Corning TC-5026) between the package flange and a machined or extruded heatsink. Torque the mounting screws to the manufacturer-specified value (typically 0.5-0.7 N-m) to avoid flange cracking. At 23 W continuous W-CDMA and 50% efficiency, approximately 23 W is dissipated in the device; the heatsink must be rated to keep the flange temperature below the maximum Tj derating curve in the datasheet.
Use a low-loss PCB substrate such as Rogers RO4350B or Arlon AD255C for the matching-network and bias-tee traces near the device pins. Keep the gate-bias trace physically separated from the drain trace to minimize feedback coupling that could cause instability; at 2110-2170 MHz a quarter-wavelength of FR4-equivalent Dk traces is approximately 23 mm. Place gate and drain bypass capacitors as close to the device leads as physically possible, with via-fenced ground returns directly under the package flange.
LDMOS devices are static-sensitive. Discharge wrist-strap and workstation ground before handling. At power-up, apply gate bias (typically -2 to 0 V quiescent bias for Class AB) BEFORE applying drain voltage; failure to do so can cause uncontrolled current overshoot and device destruction. Avoid load VSWR excursions below 3:1 sustained, as this can push the operating point into the SOA-limited region. Always include a DC-blocking capacitor and an output isolator/circulator if the antenna could present an open or short circuit during operation.
The device is optimized for 28 V VDD operation. Operating at lower voltages (24 V) reduces Pout linearly and shifts bias requirements; operating above 32 V VDD risks exceeding the absolute maximum drain-source breakdown. Use a regulated, low-noise DC supply (ripple below 50 mV p-p) and a properly rated gate-bias regulator that maintains bias stability across temperature. Decoupling on the drain supply must handle the pulsed drain current; for W-CDMA at 23 W Pout, instantaneous Id peaks can reach 4-6 A during signal peaks.
Información de cumplimiento
Compliance data was not present in the verified distributor snippets. Refer to the NXP datasheet and the manufacturer's product ecology statement for definitive RoHS, REACH, lead-free, and halogen-free certifications.
