MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP
N.º de pieza: MRF6S21100NR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $35.4 | $35,40 |
| 10 | $31.86 | $318,60 |
| 100 | $28.32 | $2.832,00 |
| 500 | $24.78 | $12.390,00 |
| 1.000 | $21.24 | $21.240,00 |
MRF6S21100NR1 Descripción general
An RF power lateral MOSFET is a type of discrete power semiconductor designed specifically to amplify high-frequency signals with high efficiency and high gain. The LDMOS (Laterally Diffused Metal Oxide Semiconductor) family sits within the broader MOSFET taxonomy (power MOSFET -> RF MOSFET -> LDMOS) and is the dominant technology for cellular base-station power amplifiers because of its high breakdown voltage, excellent thermal performance, and linearity under digital modulation. The MRF6S21100NR1 targets the cellular downlink band used by 3G W-CDMA and early LTE base-station radios.
Key features include 14.5 dB typical gain at 2.11 GHz, a 28 V operating drain supply, 23 W average output power, lateral N-channel construction for improved ruggedness, and a plastic TO-270 WB-4 overmold package with integrated flanged lead frame. The device is rated for Class AB operation and accepts the high PAR (peak-to-average ratio) associated with multi-carrier W-CDMA signals. Thermal management is delivered through the source-lead frame, allowing direct PCB solder-down for low thermal resistance.
Architecturally, the device uses Freescale/NXP's seventh-generation RF LDMOS process, which provides higher power density than earlier-generation MOSFETs and improved intermodulation performance under digital modulation. The lateral structure reduces source inductance and supports broadband matching over the 2110 to 2170 MHz band. Internal gate-source ESD protection and a stable quiescent bias point make the transistor robust against overdrive and load mismatch at the antenna interface.
Typical applications include W-CDMA base-station power amplifiers in the 2110-2170 MHz downlink band, multi-carrier TDMA and CDMA amplifier stages, PCN/PCS cellular radio final stages, and WLL/TD-SCDMA power amplifiers. The device is commonly paired with NXP driver-stage LDMOS and a circulator/isolator at the output for stable impedance and reverse-power protection.
When designing with the MRF6S21100NR1, careful attention to input and output matching networks is essential because the device is specified for a 50 ohm test fixture. Designers should also implement drain-voltage sequencing, gate-bias ramp on enable, and adequate thermal vias under the source flange to keep junction temperature below 200 °C at full CW power.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical RF PA design notes that go beyond the manufacturer datasheet, helping engineers shorten RF design cycles and reduce design risk.
Alternativas directas para MRF6S21100NR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF6S21100NR1 (mismo factor de forma y huella) — difiere en Mounting Type, Package / Case, Technology, Transistor Type, Application.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6S21100NBR1
✅ Sustitución directa✓ En stock
$25 / unidad
Ver hoja de datos →MRF8S21100HSR3
✅ Sustitución directa✓ En stock
$65 / unidad
Ver hoja de datos →MRF6S21100HSR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6S21100NR1 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS (7th-generation) |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) |
| Drain Voltage (VDD) | 28 V |
| Drain Current (Continuous) | 1.05 A |
| Power Gain | 14.5 dB typical at 2.11 GHz |
| Output Power (Pout) | 23 W average (W-CDMA) |
| Quiescent Current (IDQ) | 1600 mA |
| Encapsulado / Carcasa | TO-270 WB-4 (Case 1486-03, Style 1) |
| Tipo de montaje | Surface Mount (plastic overmold) |
| Operating Mode | Class AB |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) |
Configuración de pines de MRF6S21100NR1
| Pin 1 | DRAIN — RF output / drain DC supply (28 V) |
| Pin 2 | GATE — Gate bias input (set for IDQ = 1600 mA) |
| Pin 3 | SOURCE — Source / RF ground and thermal path (PCB flange) |
DC Área de funcionamiento seguro
Aplicaciones típicas
MRF6S21100NR1 es adecuado para 6 aplicacións: W-CDMA Base Station Final PA, Multi-Carrier CDMA Power Amplifier, TD-SCDMA Cellular Radio Power Amplifier, WLL Fixed Wireless Access Power Amplifier, PCN/PCS Cellular Radio Repeater, Industrial RF Heating and Plasma Generator.
W-CDMA Base Station Final PA
The MRF6S21100NR1 is purpose-built for the final power amplifier stage of 2110-2170 MHz W-CDMA base-station transmitters. Its 14.5 dB typical gain at 2.11 GHz and 23 W average power under high-PAR modulation match the per-carrier output requirements of macro-cell 3G base stations, while the 28 V VDD aligns with standard -48V telecom bus-fed PA rails. The LDMOS process delivers the linearity required for W-CDMA adjacent-channel leakage without external DPD. Designers place it between a driver-stage NXP LDMOS and a circulator/isolator, terminating in a microstrip output match referenced to L50 ohm system impedance.
Recomendado
Multi-Carrier CDMA Power Amplifier
For multi-carrier CDMA amplifier applications covering 2110-2170 MHz, the MRF6S21100NR1's 23 W average rating, 28 V VDD, and 14.5 dB gain provide a proven output stage when two or three carriers are combined. The device's lateral N-channel construction handles the composite peak-to-average ratio while maintaining acceptable IMD3/IMD5 levels. In a multi-carrier lineup, the MRF6S21100NR1 typically follows a higher-power driver and feeds a bandpass-filter/combiner network. Adequate heatsinking of the TO-270 WB-4 flange is mandatory because composite power pushes dissipation above single-carrier levels.
Recomendado
TD-SCDMA Cellular Radio Power Amplifier
TD-SCDMA base-station transmitters in the 2010-2025 MHz / 2300-2400 MHz bands can use the MRF6S21100NR1 in applications where the deployment falls in the 2110-2170 MHz overlap with W-CDMA. Its Class AB operation, 14.5 dB gain, and 23 W average output are well-matched to TD-SCDMA macro-cell final stages. The TO-270 WB-4 overmold package simplifies PCB integration and supports reflow-compatible assembly. Designers should verify the matching network tuning points at the actual TD-SCDMA carrier frequency before substituting this part into a TD-SCDMA design.
Recomendado
WLL Fixed Wireless Access Power Amplifier
Wireless Local Loop (WLL) and fixed-wireless-access base-station radios using W-CDMA or CDMA2000 modulation in the 2110-2170 MHz band are a strong fit for the MRF6S21100NR1. The device's 23 W average rating supports the link budget for subscriber-unit-to-base-station coverage in rural or suburban deployments. Its 28 V single-rail supply simplifies the WLL radio's DC-DC converter chain. Thermal design must account for continuous operation, because WLL radios typically run at high duty cycle. The TO-270 WB-4 source-flange path allows direct PCB heat spreading with copper pours and thermal vias.
Recomendado
PCN/PCS Cellular Radio Repeater
The MRF6S21100NR1 can serve as the final stage in 2110-2170 MHz PCN/PCS cellular radio repeaters and on-channel boosters, where its 23 W average rating covers the downlink output requirement for small-cell and micro-cell coverage. The 14.5 dB gain reduces the gain burden on the preceding driver stages, and the Class AB bias point preserves linearity for the retransmitted W-CDMA waveform. Paired with a circulator and SAW filter at the input, the design achieves good out-of-band emission performance. The 28 V VDD matches the standard telecom bus rail available in repeater enclosures.
Recomendado
Industrial RF Heating and Plasma Generator
Although optimized for W-CDMA, the MRF6S21100NR1's 28 V LDMOS construction and 1.05 A continuous drain rating make it usable in industrial 2.11-2.17 GHz continuous-wave RF heating or plasma-generator prototypes where 23 W average power is sufficient. Its lateral N-channel architecture tolerates the load-mismatch conditions common in plasma chambers. Designers must add external VSWR protection and forced-air cooling because industrial applications typically exceed the CW-rated dissipation of the cellular-optimized device. Always derate the operating point for CW industrial duty cycles versus the W-CDMA-rated average.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6S21100NR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6S21100NBR1 | MRF8S21100HSR3 | MRF6S21100HSR3 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 (NI-400S equivalent) - same footprint class | TO-270 WB-4 - same |
| Output Power (Average) | 23 W | 23 W | 100 W pulsed (~3-4x higher class) | 23 W class |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Power Gain | 14.5 dB | 14.5 dB | 18 dB typical | 14.5 dB typical |
| Generation | 6th-gen LDMOS | 6th-gen LDMOS | 8th-gen LDMOS | 6th-gen LDMOS |
Diferenciadores clave
- Proven 6th-generation NXP LDMOS for cost-sensitive W-CDMA base-station PAs (frente a MRF8S21100HSR3)
- Same datasheet as MRF6S21100NBR1 for streamlined second-source qualification (frente a MRF6S21100NBR1)
- Standard 28 V single-rail operation simplifies power-conversion design (frente a GaN HEMT PA at same band)
Notas de diseño
Estimated: At 28 V VDD, 23 W average W-CDMA output, and 14.5 dB gain, the MRF6S21100NR1 dissipates roughly 14-17 W under full drive. With the TO-270 WB-4 package's theta_JC of ~0.85 °C/W (per NXP TO-270 family data, confirm exact value from datasheet), junction temperature rises ~12-14 °C/W of dissipation. Provide a copper pour under the source flange of at least 1 square inch with 12+ thermal vias to keep Tj below 200 °C. Forced-air cooling is recommended for continuous W-CDMA operation above 30 °C ambient.
The TO-270 WB-4 package has the source as the primary RF ground and thermal path. Solder the source flange directly to the PCB ground plane with a continuous ground pour extending at least 5 mm beyond the package outline on all sides. Use ceramic-chip RF bypass capacitors (100 pF and 10 nF in parallel) within 1 mm of the drain and gate pads. Maintain 50 ohm microstrip transmission lines on the substrate selected for the operating frequency; substrate thickness of 0.5-0.8 mm with Er = 3.5-4.5 is typical for 2.1-2.2 GHz designs.
Do not exceed the V(BR)DSS of 65 V on the drain; any overshoot from load mismatch can permanently damage the LDMOS cell. Always include a circulator or isolator between the PA output and the antenna feed to protect against VSWR > 2:1. Do not bias the gate above 4 V at any time, including during power sequencing; gate breakdown is irreversible. Sequence gate bias before drain voltage to prevent in-rush current damage, and verify the bias supply cannot overshoot above 4 V at turn-on.
Keep the input and output matching networks physically separated to prevent feedback oscillation. Use a via fence around the RF signal traces with via spacing less than λ/20 at 2.15 GHz (about 3 mm). Place the gate and drain bias chokes perpendicular to the RF signal flow to minimize magnetic coupling. For multi-stage designs, isolate driver and final stages with a slotted ground plane or a shielding wall to prevent inter-stage oscillation above 4 GHz.
Información de cumplimiento
RoHS and lead-free status not confirmed in provided data - verify against NXP material declaration before use in RoHS-restricted designs. AEC-Q100 not applicable - this is a base-station RF power transistor, not an automotive-grade part.
