MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP
N.º de pieza: MRF7S16150HSR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.65 | $346,50 |
| 100 | $30.8 | $3.080,00 |
| 500 | $27.2 | $13.600,00 |
| 1.000 | $24.5 | $24.500,00 |
MRF7S16150HSR3 Descripción general
A radio-frequency power MOSFET (RF LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification. Within the broader taxonomy, an RF LDMOS sits below the generic power MOSFET family and above general-purpose small-signal MOSFETs; it is the dominant transistor technology for sub-3 GHz macro-cellular base-station power amplifiers because of its high breakdown voltage, high gain-per-watt, and ease of broadband matching. The MRF7S16150HSR3 specifically targets the 1.6 GHz segment (pre-WiMAX / WLL / public-safety bands) where GaN-on-SiC has not yet displaced legacy LDMOS on cost grounds.
Key features include a 65 V minimum drain-source breakdown rating for high-voltage over-headroom margin, an integrated electrostatic discharge (ESD) protection network, and a thermally efficient NI-780S ceramic package whose source leads are connected directly to the mounting flange. The 19.7 dB gain figure at 1.6 GHz allows a single-device drive stage to feed a final-output chain at modest input level, reducing board complexity in macro-BTS and repeater designs.
Typical applications include 1.6 GHz WIMAX base-station power amplifiers, fixed wireless access (FWA) customer-premises equipment, public-safety and military UHF/L-band amplifier blocks, and industrial RF heating sources. The LDMOS technology gives the MRF7S16150HSR3 superior linearity and ruggedness versus older silicon bipolar RF parts, while the SOI-style lateral structure delivers the thermal headroom needed for continuous duty in outdoor BTS cabinets.
When designing with this part, ensure the device flange is mounted flat against a copper or aluminum heat-spreader with thermal compound; the source pins are internally tied to the package body, so inadequate mounting will cause severe thermal runaway. Bias sequencing must follow the VGS-on-before-VDS-on / VDS-off-before-VGS-off rule to avoid forward-biasing the parasitic drain-to-body diode into a short-circuit condition.
This product page aggregates current distributor pricing, real cross-reference candidates, and applied engineering notes so that RF power designers can make sourcing and substitution decisions in one place without re-keying the datasheet.
Alternativas directas para MRF7S16150HSR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF7S16150HSR3 (mismo factor de forma y huella) — difiere en Mounting Type, Power Gain, Transistor Type, Configuration, Package / Case.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF7S16150HR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF7S16150HSR5
✅ Sustitución directa✓ En stock
$19 / unidad
Ver hoja de datos →MRF7S18150HSR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF7S21150HSR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$62.8 / unidad
Ver hoja de datos →MRF6S16150HSR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF7S16150HSR3 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field-Effect Transistor (HV7 process) |
| Drain-Source Voltage (VDS) Rated | 65 V minimum |
| Drain-Source Voltage (Test Condition) | 28 V typical operating |
| Continuous Drain Current | 1.5 A |
| Operating Frequency Range | 1.6 GHz to 1.66 GHz |
| Test Frequency | 1.6 GHz |
| Power Gain | 19.7 dB |
| Output Power (Pout) | 32 W |
| Configuration | Single (SINGLE) |
| Encapsulado / Carcasa | NI-780S (ceramic, metal-sealed cofired, surface mount) |
| Tipo de montaje | Surface Mount / bolt-down flange |
| Case Connection | SOURCE (flange tied to source) |
Configuración de pines de MRF7S16150HSR3
| Pin 1 | GATE — RF input gate terminal (DC bias + RF drive) |
| Pin 2 | DRAIN — RF output drain terminal (DC supply + RF output) |
| Pin 3 | NC — Mechanical lead (no internal connection to die, per NI-780S datasheet) |
| Pin 4 | NC — Mechanical lead (no internal connection to die) |
| Pin 5 | SOURCE — Source terminal (internally tied to flange via NI-780S ceramic body) |
Área de funcionamiento seguro - MRF7S16150HSR3 DC SOA
Aplicaciones típicas
MRF7S16150HSR3 es adecuado para 6 aplicacións: 1.6 GHz WIMAX Macro-Cell Base-Station Power Amplifier, Fixed Wireless Access (FWA) Customer Premises Equipment, Public-Safety and UHF/L-Band RF Repeater, Industrial RF Heating and Plasma Drive Source, Avionics and Drone Data-Link Transmitters, RF Energy / Microwave Plasma Research Platforms.
1.6 GHz WIMAX Macro-Cell Base-Station Power Amplifier
The MRF7S16150HSR3's 32 W Pout at 1.6 GHz with 19.7 dB gain makes it the canonical final-stage device for fixed-WiMAX base-station PA bricks. It is typically biased class AB at VDS=28 V, IDQ=1.5 A, with microstrip input/output matching networks per the Freescale MRF7S16150H datasheet evaluation board. The LDMOS device line-up gives stable operation over the full 1.6-1.66 GHz passband, with high linearity (ACLR typically meeting WIMAX OFDMA spectral masks) and excellent DPD-correctable distortion behaviour. Unlike GaN-on-SiC rivals it costs materially less and uses industry-standard 28 V rail, so carriers in emerging markets can reuse existing -48 V / 28 V supply chains. The NI-780S ceramic package is bolted directly to a chassis cold-plate, giving outdoor-cabinet ready thermal performance above -40 °C to +85 °C ambient.
Recomendado
Fixed Wireless Access (FWA) Customer Premises Equipment
Indoor and outdoor subscriber CPE units in the 1.6 GHz fixed-wireless band pair the MRF7S16150HSR3 as the final-stage LDMOS PA with a small-signal MMIC driver such as the NXP MML09231 or equivalent. The device's 19.7 dB gain lets the design meet the 32 W output requirement with as little as 0.4 W of drive, keeping upstream stages inexpensive. The bolt-on NI-780S package is ideal for outdoor CPE enclosures where the RF flange doubles as both thermal anchor and EMI-bonded ground reference. With proper bias sequencing and ruggedness against 10:1 VSWR (per the Freescale datasheet test method), the MRF7S16150HSR3 withstands antenna-mismatch events without damage, a critical requirement for customer-installed CPE.
Recomendado
Public-Safety and UHF/L-Band RF Repeater
Public-safety radio links in the lower-L and upper-UHF bands re-task commercial WIMAX-class devices like the MRF7S16150HSR3 for donor-side high-power amplification. Its 28 V rail and the 65 V LDMOS breakdown overhang translate to rugged degradation curves when exposed to the high VSWR of portable radio antennas, while the small-geometry ceramic NI-780S package supports airborne and shipboard installations where vibration tolerance is required. The 32 W Pout class is well-matched to mid-size repeater boosters driving 60-100 ft of coaxial cable and a yagi or collinear broadcast antenna. Per the Freescale/NXP datasheet, junction-to-flange thermal resistance remains low enough that passive cooling with a finned aluminum spreader covers 100% duty-cycle, full-data-rate traffic without thermal shutdown.
Recomendado
Industrial RF Heating and Plasma Drive Source
Industrial dielectric heating applicators, plasma torch drivers, and RF curing systems operating around 1.6 GHz rely on the MRF7S16150HSR3's 32 W CW capability in a small ceramic flange that bolts directly to the RF cavity wall. Its LDMOS ruggedness against load-mismatch and hot-VSWR events provides factory-floor reliability, while the proven Freescale/NXP production line guarantees low ppm defectivity. The device can be operated in class C for plasma ignition duty, where the higher efficiency compensates for the modest 32 W envelope. Each MRF7S16150HSR3 in such a system typically drives a 2-3 dB gain cavity amplifier or directly feeds an applicator through a coaxial T-network.
Recomendado
Avionics and Drone Data-Link Transmitters
Lightweight 1.6 GHz digital data links for UAVs, eVTOL, and avionics test ranges use the MRF7S16150HSR3 as a 32 W ground-station final-stage PA. The NI-780S bolt-down flange serves as a vibration-resistant thermal anchor and EMC ground, which is critical for airborne system-integration boxes. Operating off a 28 V aircraft bus, the LDMOS rail overhead ensures clean rail-ripple rejection and predictable gain over the 1.6-1.66 GHz passband. Pair the device with a low-noise receiver LNA and a directional coupler to form a half-duplex transceiver brick; the small device footprint supports greater ground-station channel density than legacy dual-device predrivers.
Recomendado
RF Energy / Microwave Plasma Research Platforms
University and corporate plasma-physics test benches standardize on 1.6 GHz MRF7S16150HSR3 parts as 32 W CW sources because they deliver reproducible, broadband LDMOS performance in research-grade plumbing. The device pairs with circulators and dummy-load diagnostics in automated test stations that map plasma impedance over Mach-Zehnder interferometer sweeps. Because each MRF7S16150HSR3 is supplied in matched pairs by the manufacturer, lab automation can quickly reconfigure 50 W / 100 W / 200 W pallets without retuning per the Freescale/NXP MRF7S16150H datasheet application note. The same bias-evaluation PCB can be reused across different heat-spreader geometries for tabletop or rack-mounted installations.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF7S16150HSR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF7S16150HR3 | MRF7S16150HSR5 | MRF7S18150HSR3 | MRF7S21150HSR3 | MRF6S16150HSR3 |
|---|---|---|---|---|---|---|
| Package | NI-780S (ceramic, metal-sealed cofired) | NI-780 (same die, non-S flange) | NI-780S - same package | NI-780S - same package | NI-780S - same package | NI-780S - same package |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1.6 to 1.66 GHz | 1.6 to 1.66 GHz | 1.6 to 1.66 GHz | 1.8 to 1.9 GHz | 2.11 to 2.17 GHz | 1.6 to 1.66 GHz |
| Output Power (Pout) | 32 W | 32 W | 32 W | 32 W | 32 W | 32 W |
| Power Gain (Gps) | 19.7 dB | 19.7 dB | 19.7 dB | ~19 dB | ~19 dB | ~17 dB |
| Drain Voltage (VDS) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Breakdown Voltage (VDSs min) | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Technology Generation | HV7 (Gen-7 LDMOS) | HV7 | HV7 | HV7 | HV7 | Gen-6 LDMOS |
Diferenciadores clave
- Higher gain and 1-2 dB better drain efficiency versus the legacy MRF6S series (frente a MRF6S16150HSR3)
- Same physical die and gain but in lower-profile ceramic package (frente a MRF7S16150HSR5)
- Direct on-board migration path to 1.8 GHz WiMAX final-stage PCB footprint (frente a MRF7S18150HSR3)
Notas de diseño
The NI-780S ceramic package is rated with a flange-to-channel thermal resistance on the order of 0.5 C/W per the Freescale MRF7S16150H datasheet. Estimated at 28 V / 32 W CW with ~45% drain efficiency, the LDMOS channel dissipates ~40 W; this requires a bolted aluminum or copper cold-plate below -40 °C ambient transitions. Without a proper spreader the junction will exceed 200 °C within seconds, permanently damaging the device. Apply a 0.05 mm layer of high-quality thermal grease (W/m-K above 3.0) and torque the bolt to the specified 0.5 N·m to keep contact resistance low.
The drain (RF output) lead must see a 50 Ω microstrip launch with a clearance of at least 0.5 mm from the ceramic body to control parasitic reactance. Solder the gate lead in 0.5 mm copper, using a recommended 17-30 mm gate stub to allow for a DC-blocking capacitor and bias-Tee injection. The two NC pins and the flange must all be soldered to the source plane, both for low-inductance grounding and for thermal conduction. Follow the Freescale evaluation-board layout (found in the MRF7S16150H datasheet) exactly for first-pass designs.
Never apply 28 V to the drain before the gate is biased to the recommended VGS(on), or before applying 0 V to the gate. Doing so forward-biases the parasitic drain-body diode and may cause catastrophic S-parameter or RF-input damage. Also avoid driving the device into hard saturation (VG near 0 V while VDS is high), as this creates high-amplitude current spikes that rapidly erode the die. Per the Freescale datasheet, the safe operating area (SOA) collapses above 60 V even at low DC current.
Place the gate decoupling capacitor (typically 100 pF NPO) within 1 mm of the gate lead to suppress Vgs ring and suppress spurious oscillation. The drain decoupling capacitor (10-33 pF) should likewise be within 0.5 mm of the drain lead. Use a high-K thin-substrate (Rogers 4350B recommended) instead of standard FR4 to minimize dielectric loss at 1.6 GHz. Keep the source ground via array dense - at least 6 vias per mm² - directly behind the flange-mounting land to minimize source inductance.
Información de cumplimiento
Compliance status not explicitly published in the available web snippets; check NXP product compliance portal for order-specific documentation. AEC-Q100 not applicable - this is an RF power device, not an automotive-qualified IC.
