MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
N.º de pieza: MRF7S19080HR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $52.62 | $52,62 |
| 10 | $47.36 | $473,60 |
| 100 | $42.1 | $4.210,00 |
| 250 | $38.95 | $9.737,50 |
| 500 | $36.2 | $18.100,00 |
MRF7S19080HR3 Descripción general
A lateral N-channel enhancement-mode RF power MOSFET (LDMOS) is a high-power transistor architecture in which the current-carrying channel is oriented laterally along the die, enabling high breakdown voltage, high gain, and excellent ruggedness under severe mismatch (high VSWR). Within the broader taxonomy it sits as: LDMOS -> RF power MOSFET -> power transistor -> discrete semiconductor. LDMOS dominates the cellular base-station PA market from 700 MHz to 2.7 GHz because of its high efficiency, broadband response, and ability to be driven directly from 50 ohm matching networks.
Key features of the MRF7S19080HR3 include integrated ESD protection, optimized for Doherty and linear amplifier topologies, broadband response covering the full 1930-1990 MHz PCS/cellular band, and a Ni-plated ceramic NI-780H-2L package with two flanged mounting holes that provide low thermal resistance and reliable screw-down assembly. Typical two-carrier W-CDMA drive performance is characterized at IDQ = 750 mA with 28 V VDD, the standard bias point for Class AB linear operation.
The internal die uses NXP's HV7 LDMOS process with a drain-source breakdown rating of 65 V, providing substantial headroom above the 28 V operating rail for transient over-voltage events. The NI-780H-2L package has a low thermal resistance path designed for forced-air cooling or heatsink mounting, and the gate is internally matched for simplified board-level integration.
Typical applications include W-CDMA/CDMA2000 base-station power amplifiers, TD-SCDMA cellular infrastructure, multi-carrier linear PAs for PCS/cellular bands, Class AB driver stages in Doherty amplifier chains, and tactical or industrial RF links operating in the 1.9 GHz band. Engineers choose MRF7S19080HR3 when a proven, broadband 28 V LDMOS with documented W-CDMA ACPR performance is required.
When designing with this device, prioritize a low-inductance drain bias feed and a properly modeled load-pull match at the target frequency. The part is rated for high VSWR mismatch; however, designing the output matching network for the documented 50 ohm load remains the safest path to datasheet-typical gain and efficiency.
Alternativas directas para MRF7S19080HR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF7S19080HR3 (mismo factor de forma y huella) — difiere en Lead Free Status, Package, Technology, Transistor Type, Configuration.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF7S19080HSR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF7S19080HR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF7S19120NR1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$73 / unidad
Ver hoja de datos →AFT20P140-4WNR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF7S19080HR3 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV7 RF Power LDMOS |
| Frequency Range | 1930 MHz to 1990 MHz |
| Test Frequency | 1.99 GHz (1987.5 MHz) |
| Drain-Source Voltage (Vdss) Rated | 65 V |
| Operating Drain Voltage (VDD) | 28 V |
| Quiescent Current (IDQ) | 750 mA |
| Output Power (Pout, Avg.) | 24 W (W-CDMA) |
| Power Gain (Gp) | 18 dB |
| Drain Efficiency | 32 % at 24 W Avg. |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel |
| Device Output Signal PAR | 6.2 dB @ 0.01 % CCDF |
| Encapsulado | NI-780H-2L (ceramic, flanged) |
| Tipo de montaje | Surface Mount / Screw Mount |
| Lead Free Status | Lead Free |
| Estado RoHS | Compliant |
| Configuration | Single, Push-Pull |
Configuración de pines de MRF7S19080HR3
| Pin 1 | DRAIN — RF output / Drain bias (28 V VDD) |
| Pin 2 | GATE — RF input / Gate bias |
| Pin 3 | SOURCE / FLANGE — Source and thermal ground (bolted to heatsink) |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
MRF7S19080HR3 es adecuado para 6 aplicacións: W-CDMA Base-Station Power Amplifier, CDMA2000 PCS Cellular Infrastructure, TD-SCDMA Cellular Power Amplifier, Doherty Amplifier Carrier Stage, Multi-Carrier Linear Power Amplifier, Industrial / Tactical 1.9 GHz RF Link.
W-CDMA Base-Station Power Amplifier
The MRF7S19080HR3 is purpose-built for 1930-1990 MHz W-CDMA base-station PAs. At 28 V VDD and IDQ = 750 mA the part delivers 24 W average output with 18 dB gain and 32 % drain efficiency. ACPR is -38 dBc at 5 MHz offset in a 3.84 MHz channel, meeting 3GPP linearity requirements. The NI-780H-2L flange provides low thermal resistance for continuous base-station duty. Designers use this part in the final stage of macro-cell PA modules behind a digital predistortion (DPD) loop. Recommended companion MPNs: MRF7S19080HSR3 (carrier-amp second source), AFT20P140-4WNR3 (peak-amp option).
Recomendado
CDMA2000 PCS Cellular Infrastructure
The 1930-1990 MHz band covers the CDMA2000 PCS downlink. MRF7S19080HR3 is characterized for IS-95/CDMA2000 multi-carrier signals at 28 V with 18 dB gain and 24 W average output. Its lateral N-channel LDMOS structure provides high ruggedness under antenna-mismatch VSWR events common in field-deployed base stations. Engineers integrate this part into macro-cell and micro-cell PA lineups, often as the final stage after a lower-power driver. Recommended companion MPNs: MRF7S19080HR3 driver (lower power), MRF8HP21130HSR3 (AWS band variant).
Recomendado
TD-SCDMA Cellular Power Amplifier
The MRF7S19080HR3 is recommended for TD-SCDMA base-station PAs covering 1880-1920 MHz and 2010-2025 MHz, with the part's 1930-1990 MHz optimized response extending into the TD-SCDMA downlink band. Per the NXP datasheet it is suitable for Class AB and Class C operation. Designers use it in time-division duplex (TDD) PA modules where the LDMOS part must handle high peak-to-average ratios without memory-effect distortion. Recommended companion MPNs: MRF7S19080HSR3 (variant), MRF8S21100HR5 (UMTS band reference).
Recomendado
Doherty Amplifier Carrier Stage
In Doherty amplifier architectures, the MRF7S19080HR3 functions as the carrier (main) PA, biased in Class AB at IDQ = 750 mA. Its 18 dB gain and 32 % efficiency at 24 W average make it an excellent choice for the carrier path, while a higher-power peaking device handles the upper power range. The NI-780H-2L flange provides repeatable thermal performance for paralleling multiple carriers in a multi-sector PA. Recommended companion MPNs: AFT20P140-4WNR3 (peaking amplifier).
Recomendado
Multi-Carrier Linear Power Amplifier
The MRF7S19080HR3's -38 dBc ACPR at 5 MHz offset makes it ideal for multi-carrier PCS amplifiers where two or more W-CDMA carriers are combined. Its high linearity reduces intermodulation distortion between carriers. NXP characterizes the part explicitly for multi-carrier use, and the NI-780H-2L package handles the resulting thermal load with proper heatsinking. Recommended companion MPNs: MRF7S19080HSR3 (redundant carrier PA), MRF8HP21130HSR3 (AWS multi-carrier reference).
Recomendado
Industrial / Tactical 1.9 GHz RF Link
Outside cellular infrastructure, the MRF7S19080HR3's 1930-1990 MHz coverage supports industrial and tactical RF links in the 1.9 GHz band. The LDMOS ruggedness handles antenna mismatch common in mobile deployments. Engineers use this part in private-network base stations, public-safety repeaters, and tactical communications amplifiers where commercial W-CDMA silicon is acceptable for the application. Recommended companion MPNs: MRF7S19080HSR3 (production second source).
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF7S19080HR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF7S19080HSR3 | MRF7S19080HR5 | MRF7S19120NR1 | AFT20P140-4WNR3 |
|---|---|---|---|---|---|
| Package | NI-780H-2L | NI-780S-2L | NI-780H-2L | NI-780H-2L | OM-780-4 |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1800-2000 MHz |
| Output Power (Avg.) | 24 W | 24 W | 24 W | ~28 W | 140 W pulsed |
| Power Gain | 18 dB | 18 dB | 18 dB | 18 dB | 16 dB |
| Operating VDD | 28 V | 28 V | 28 V | 28 V | 50 V |
Diferenciadores clave
- Documented W-CDMA ACPR performance at production bias point (frente a Generic 1.9 GHz RF MOSFETs)
- Higher 65 V Vdss rating provides margin above 28 V operating rail (frente a Lower-voltage RF MOSFETs (Vdss < 50 V))
- Integrated NI-780H-2L ceramic flange reduces thermal resistance (frente a Plastic-packaged RF MOSFETs)
Notas de diseño
The NI-780H-2L flange is the primary thermal path for the MRF7S19080HR3. At 28 V VDD and 24 W average RF output with 32 % drain efficiency, the part dissipates approximately 51 W of DC power, so the flange MUST be bolted to a heatsink or cold plate using thermal compound. Estimated: with theta_JC of approximately 0.3 C/W and a 50 C/W heatsink-to-ambient thermal resistance, junction temperature rise is roughly 35 C above the heatsink. Insufficient thermal mounting is the most common failure mode for this part.
Use low-inductance drain bias feeds (multiple vias, short traces) to prevent feedback instability at 1.9 GHz. Place gate and drain matching networks on Rogers RO4350B or equivalent low-loss PCB substrate with controlled-impedance (50 ohm) microstrip lines. Keep the input (gate) matching network physically separated from the output (drain) matching network to minimize coupling. Per NXP application notes, the source leads must be bonded directly to the ground plane with maximum via density under the flange.
Do not exceed Vdss = 65 V (including transient overshoot from load-mismatch). Ensure the bias sequencing turns on the gate first (negative voltage, typically -5 V) before applying 28 V VDD, then ramps gate voltage to achieve IDQ = 750 mA. Reverse biasing or fast hot-switching of VDD can cause device failure. Designers should also include a drain voltage clamp or TVS for severe antenna-mismatch conditions, even though the LDMOS part is rated for high VSWR.
For W-CDMA linearity, maintain IDQ = 750 mA within +/-50 mA across the operating temperature range. Drain efficiency drops roughly 0.1 % per 1 C temperature rise at constant IDQ; for thermally stable operation mount a thermistor to the flange for active bias compensation. ACPR at 5 MHz offset is sensitive to bias drift, so closed-loop bias control is recommended for production base-station designs.
Información de cumplimiento
RoHS compliant and lead-free per NXP product page. Designed for commercial cellular infrastructure; not AEC-Q100 qualified (not applicable for RF power MOSFET in automotive).
