MRF8P18265HSR5 - 1.88GHz 72W LDMOS RF Power Transistor | NXP
N.º de pieza: MRF8P18265HSR5 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $118 | $11.800,00 |
| 500 | $105.75 | $52.875,00 |
| 1.000 | $95.2 | $95.200,00 |
MRF8P18265HSR5 Descripción general
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET variant engineered for radio-frequency power amplification. Within the discrete semiconductor taxonomy, it sits under RF MOSFETs, which themselves belong to the power transistor family used in telecom infrastructure. LDMOS technology dominates macro-cell base-station power amplifiers because it combines high RF power density, excellent gain at UHF/microwave frequencies, and ruggedness under mismatched load conditions.
Key specifications include a 65 V drain-source voltage rating, 800 mA continuous DC drain current, and operation centered at 1.88 GHz with 16 dB power gain. The device is engineered for high-efficiency Doherty amplifier configurations where the peaking amplifier must deliver substantial output while the carrier amplifier handles the average power envelope. The ceramic NI 1230S-8 package provides low thermal resistance and high RF gain stability under continuous CW and pulsed signal conditions.
Architecturally, the MRF8P18265HSR5 uses NXP's HV8 LDMOS process generation, which integrates optimized matching structures inside the ceramic flange package. This reduces the need for external matching networks and improves gain flatness across the 1.8-2.0 GHz band. The high breakdown voltage gives designers significant headroom for VSWR mismatch survival typical of antenna-fed base-station PAs.
Typical applications include 4G LTE macro-cell base-station Doherty final stages, WCDMA/UMTS power amplifiers, and high-peak RF transmitter boosters operating in the 1.8-1.9 GHz DCS/PCS band. Engineers select this part when designing Doherty PAs needing high gain and high peak power for the peaking amplifier path.
A critical design consideration is thermal management: at 72 W CW output and roughly 50% drain efficiency, the device dissipates ~50 W internally. The NI 1230S-8 flange must be bolted to a heatsink or cold plate with proper thermal interface material, otherwise junction temperature will exceed the 200 C rating. Use proper sequencing of gate bias (VG) before drain voltage (VD) during turn-on.
This page consolidates distributor pricing, verified parametric data, and practical drop-in alternatives not found in a single source, helping RF engineers accelerate design and sourcing decisions.
Alternativas directas para MRF8P18265HSR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF8P18265HR6
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8P18265HBR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF8P20160HSR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8P18125HSR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF7S38010HR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF8P18265HSR5 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS, N-Channel |
| Technology | HV8 LDMOS (Freescale/NXP) |
| Operating Mode | Enhancement Mode |
| Drain-Source Voltage (Vds) Rated | 65 V |
| Drain Current (Id) Continuous | 800 mA DC |
| Operating Frequency | 1.88 GHz |
| Power Gain | 16 dB |
| Output Power (Pout) | 72 W |
| Test Supply Voltage | 30 V |
| Configuration | Single, Doherty-ready |
| Peak Reflow Temperature | 260 C (max 40 s) |
| Encapsulado | NI 1230S-8 (air-cavity ceramic flange) |
| Tipo de montaje | Flange mount, through-hole |
Configuración de pines de MRF8P18265HSR5
| Pin 1 | RF Input (Gate) — RF input lead; gate bias applied via internal matching network |
| Pin 2 | Gate Bias (VG) — DC gate bias connection for quiescent current setting |
| Pin 3 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 4 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 5 | Drain Bias (VD) — DC drain supply connection (30 V typical) |
| Pin 6 | RF Output (Drain) — RF output lead; connects to external matching network |
| Pin 7 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 8 | Flange (RF Ground) — Ceramic flange serves as RF ground and thermal path; bolt to heatsink |
Área de funcionamiento seguro
Aplicaciones típicas
MRF8P18265HSR5 es adecuado para 6 aplicacións: 4G LTE Base-Station Doherty Peaking PA, WCDMA/UMTS Macro-Cell Power Amplifier, DCS-1800 / PCS-1900 Cellular Repeater, High-Power RF Transmitter Final Stage, Multi-Carrier GSM Power Amplifier, 5G NR Band 3 Refit / Legacy 4G Migration.
4G LTE Base-Station Doherty Peaking PA
The MRF8P18265HSR5 is purpose-engineered for the peaking amplifier leg of a Doherty PA in 4G LTE macro-cell base stations. With 72 W peak envelope power and 16 dB gain at 1.88 GHz, it provides the high-peak headroom needed to maintain linearity on the crest-factor-rich OFDM signals of LTE. Operating at 30 V drain, the LDMOS process delivers the high efficiency required for carrier-grade power amplifiers. Paired with a main amplifier such as the MRF8P18265HR6, the Doherty configuration maintains high efficiency at back-off power levels. The NI 1230S-8 ceramic flange provides excellent thermal dissipation for continuous high-power operation.
Recomendado
WCDMA/UMTS Macro-Cell Power Amplifier
For WCDMA/UMTS base stations operating at 1.88 GHz, the MRF8P18265HSR5's 72 W output and 16 dB gain support high-power final-stage designs. The HV8 LDMOS process provides the ruggedness needed to survive antenna VSWR mismatches typical of field deployments. The 65 V breakdown voltage gives design margin for overshoot and load-pull excursions. Used in single-ended or Doherty configurations, the part delivers the linearity required for WCDMA's QPSK/HSPDA modulation while maintaining competitive drain efficiency. The ceramic NI 1230S-8 package supports long-term reliability at elevated junction temperatures.
Recomendado
DCS-1800 / PCS-1900 Cellular Repeater
The MRF8P18265HSR5's 1.88 GHz operating point places it squarely in the PCS-1900 uplink/downlink band, making it suitable for high-power cellular repeater and booster designs. Its 72 W Pout allows the repeater to cover large indoor or outdoor venues with fewer PA stages. The 16 dB gain simplifies driver-chain design, reducing the number of preceding gain stages. Ceramic flange mounting integrates directly with heatsink assemblies used in outdoor repeater enclosures. Operated below rated Pout for linearity, the part provides robust long-term performance in continuous-duty repeater service.
Recomendado
High-Power RF Transmitter Final Stage
Beyond cellular, the MRF8P18265HSR5 serves as a high-power final stage in industrial and scientific RF transmitters operating in the 1.8-1.9 GHz ISM-adjacent band. Its 72 W output and HV8 LDMOS ruggedness suit pulsed or CW applications including RF heating, plasma generation, and accelerator cavity drivers. The 65 V breakdown gives headroom for inductive load transients, and the ceramic package supports high-duty-cycle operation. Designers pair it with circulator/isolator protection to handle reflected power. The 30 V test condition provides a usable bias point for non-cellular waveforms.
Recomendado
Multi-Carrier GSM Power Amplifier
In multi-carrier GSM combiner amplifiers, the MRF8P18265HSR5's 72 W Pout allows several carriers to be combined into a single high-power final stage. The LDMOS device's excellent intermodulation distortion performance preserves signal integrity across closely packed GSM channels. The 16 dB gain reduces driver-stage requirements, and the NI 1230S-8 ceramic flange provides the thermal headroom for continuous multi-carrier operation. Bias sequencing and VSWR protection must be implemented per NXP application notes for reliable multi-carrier service.
Recomendado
5G NR Band 3 Refit / Legacy 4G Migration
The MRF8P18265HSR5 can be used in 5G NR Band 3 (1800 MHz) base-station upgrades where existing 4G PA lineups are being refit for 5G NR operation. Its 1.88 GHz target frequency covers the n3 downlink band with appropriate matching network adjustment. The 72 W peak power supports the high crest-factor OFDM signals of 5G NR. For new 5G mMIMO and higher-band designs, NXP recommends the GaN-based Airfast portfolio, but the MRF8P18265HSR5 remains a cost-effective choice for Band 3 refits where the existing Doherty infrastructure can be reused.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF8P18265HSR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF8P18265HR6 | MRF8P18265HBR5 | MRF8P20160HSR5 | MRF8P18125HSR5 | MRF7S38010HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors (Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI 1230S-8 (ceramic flange) | NI 1230S-8 - same | NI 1230S-8 - same | NI 1230S-8 - same | NI 1230S-8 - same | NI 780S-8 - same family, different variant |
| Operating Frequency | 1.88 GHz | 1.88 GHz | 1.88 GHz | 2.0 GHz | 1.8 GHz | 3.8 GHz |
| Output Power (Pout) | 72 W | 72 W | 72 W | ~50 W | ~50 W | 10 W |
| Vds Rating | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Doherty Role | Peaking amplifier | Main/Carrier amplifier | Peaking amplifier | Peaking amplifier | Peaking amplifier | Driver stage |
Diferenciadores clave
- Purpose-optimized for 1.88 GHz Doherty peaking (frente a MRF8P18265HR6)
- Higher peak power than MRF8P20160HSR5 in same package (frente a MRF8P20160HSR5)
- Lower-band (1.88 GHz) focus vs MRF7S38010HR3 (frente a MRF7S38010HR3)
Notas de diseño
At 72 W Pout and ~50% drain efficiency, the MRF8P18265HSR5 dissipates approximately 50 W internally as heat. The NI 1230S-8 ceramic flange must be bolted to a heatsink or cold plate with thermal interface material (TIM) rated for high power. Estimated: with theta_JC of ~0.3 C/W and a properly mounted cold plate at 50 C, junction temperature rise is ~15 C above cold plate, comfortably below the 200 C rating. Insufficient heatsinking is the leading cause of premature RF transistor failure.
Use a star-ground bias layout with gate and drain supplies decoupled close to the package leads. Place 100 nF and 10 uF ceramic bypass capacitors on both VG and VD rails within 5 mm of the bias pins. The RF input and output traces must be 50-ohm microstrip lines on a low-loss substrate (Rogers RO4350B recommended for 1.88 GHz). Apply VG before VD during turn-on and reverse the sequence at turn-off to prevent thermal runaway.
Do not exceed the 65 V Vds rating even under transient overshoot - a TVS diode or clamp circuit on the drain rail is recommended. The quiescent current (Idq) must be set per the NXP datasheet (typically 50-200 mA for Doherty peaking); too high Idq destroys efficiency, too low causes gain ripple. Verify VSWR protection (circulator or isolator) before applying full RF drive, as LDMOS devices can fail catastrophically under open or short load conditions.
For Doherty operation, the phase relationship between main and peaking amplifiers must be precisely controlled at 1.88 GHz. Use a 90-degree hybrid combiner or appropriate offset lines per NXP application note AN1908. Mismatched phase reduces Doherty efficiency gain and can cause instability. Always verify stability with a small-signal network analyzer before high-power testing.
Información de cumplimiento
RoHS/REACH/lead-free status not present in verified web data. The MRF8P18265HSR5 is not AEC-Q100 qualified - it is a high-power RF transistor for telecom infrastructure, not automotive. Conflict minerals status should be requested directly from NXP under their standard supply-chain disclosure process.
