MRF8P18265HSR5 - 1.88GHz 72W LDMOS RF Power Transistor | NXP
Артикул: MRF8P18265HSR5 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $118 | $11.800,00 |
| 500 | $105.75 | $52.875,00 |
| 1.000 | $95.2 | $95.200,00 |
MRF8P18265HSR5 Обзор
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET variant engineered for radio-frequency power amplification. Within the discrete semiconductor taxonomy, it sits under RF MOSFETs, which themselves belong to the power transistor family used in telecom infrastructure. LDMOS technology dominates macro-cell base-station power amplifiers because it combines high RF power density, excellent gain at UHF/microwave frequencies, and ruggedness under mismatched load conditions.
Key specifications include a 65 V drain-source voltage rating, 800 mA continuous DC drain current, and operation centered at 1.88 GHz with 16 dB power gain. The device is engineered for high-efficiency Doherty amplifier configurations where the peaking amplifier must deliver substantial output while the carrier amplifier handles the average power envelope. The ceramic NI 1230S-8 package provides low thermal resistance and high RF gain stability under continuous CW and pulsed signal conditions.
Architecturally, the MRF8P18265HSR5 uses NXP's HV8 LDMOS process generation, which integrates optimized matching structures inside the ceramic flange package. This reduces the need for external matching networks and improves gain flatness across the 1.8-2.0 GHz band. The high breakdown voltage gives designers significant headroom for VSWR mismatch survival typical of antenna-fed base-station PAs.
Typical applications include 4G LTE macro-cell base-station Doherty final stages, WCDMA/UMTS power amplifiers, and high-peak RF transmitter boosters operating in the 1.8-1.9 GHz DCS/PCS band. Engineers select this part when designing Doherty PAs needing high gain and high peak power for the peaking amplifier path.
A critical design consideration is thermal management: at 72 W CW output and roughly 50% drain efficiency, the device dissipates ~50 W internally. The NI 1230S-8 flange must be bolted to a heatsink or cold plate with proper thermal interface material, otherwise junction temperature will exceed the 200 C rating. Use proper sequencing of gate bias (VG) before drain voltage (VD) during turn-on.
This page consolidates distributor pricing, verified parametric data, and practical drop-in alternatives not found in a single source, helping RF engineers accelerate design and sourcing decisions.
Аналоги без доработки для MRF8P18265HSR5 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF8P18265HR6
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF8P18265HBR5
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF8P20160HSR5
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF8P18125HSR5
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF7S38010HR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MRF8P18265HSR5 Максимальные параметры и электрические характеристики
| Тип транзистора | LDMOS, N-Channel |
| Technology | HV8 LDMOS (Freescale/NXP) |
| Operating Mode | Enhancement Mode |
| Drain-Source Voltage (Vds) Rated | 65 V |
| Drain Current (Id) Continuous | 800 mA DC |
| Operating Frequency | 1.88 GHz |
| Power Gain | 16 dB |
| Output Power (Pout) | 72 W |
| Test Supply Voltage | 30 V |
| Configuration | Single, Doherty-ready |
| Peak Reflow Temperature | 260 C (max 40 s) |
| Корпус | NI 1230S-8 (air-cavity ceramic flange) |
| Тип монтажа | Flange mount, through-hole |
Конфигурация выводов MRF8P18265HSR5
| Контакт 1 | RF Input (Gate) — RF input lead; gate bias applied via internal matching network |
| Контакт 2 | Gate Bias (VG) — DC gate bias connection for quiescent current setting |
| Контакт 3 | NC — Not connected (per datasheet mechanical drawing) |
| Контакт 4 | NC — Not connected (per datasheet mechanical drawing) |
| Контакт 5 | Drain Bias (VD) — DC drain supply connection (30 V typical) |
| Контакт 6 | RF Output (Drain) — RF output lead; connects to external matching network |
| Контакт 7 | NC — Not connected (per datasheet mechanical drawing) |
| Контакт 8 | Flange (RF Ground) — Ceramic flange serves as RF ground and thermal path; bolt to heatsink |
Область безопасной работы
Типичное применение
MRF8P18265HSR5 подходит для 6 применениеs: 4G LTE Base-Station Doherty Peaking PA, WCDMA/UMTS Macro-Cell Power Amplifier, DCS-1800 / PCS-1900 Cellular Repeater, High-Power RF Transmitter Final Stage, Multi-Carrier GSM Power Amplifier, 5G NR Band 3 Refit / Legacy 4G Migration.
4G LTE Base-Station Doherty Peaking PA
The MRF8P18265HSR5 is purpose-engineered for the peaking amplifier leg of a Doherty PA in 4G LTE macro-cell base stations. With 72 W peak envelope power and 16 dB gain at 1.88 GHz, it provides the high-peak headroom needed to maintain linearity on the crest-factor-rich OFDM signals of LTE. Operating at 30 V drain, the LDMOS process delivers the high efficiency required for carrier-grade power amplifiers. Paired with a main amplifier such as the MRF8P18265HR6, the Doherty configuration maintains high efficiency at back-off power levels. The NI 1230S-8 ceramic flange provides excellent thermal dissipation for continuous high-power operation.
Рекомендуется
WCDMA/UMTS Macro-Cell Power Amplifier
For WCDMA/UMTS base stations operating at 1.88 GHz, the MRF8P18265HSR5's 72 W output and 16 dB gain support high-power final-stage designs. The HV8 LDMOS process provides the ruggedness needed to survive antenna VSWR mismatches typical of field deployments. The 65 V breakdown voltage gives design margin for overshoot and load-pull excursions. Used in single-ended or Doherty configurations, the part delivers the linearity required for WCDMA's QPSK/HSPDA modulation while maintaining competitive drain efficiency. The ceramic NI 1230S-8 package supports long-term reliability at elevated junction temperatures.
Рекомендуется
DCS-1800 / PCS-1900 Cellular Repeater
The MRF8P18265HSR5's 1.88 GHz operating point places it squarely in the PCS-1900 uplink/downlink band, making it suitable for high-power cellular repeater and booster designs. Its 72 W Pout allows the repeater to cover large indoor or outdoor venues with fewer PA stages. The 16 dB gain simplifies driver-chain design, reducing the number of preceding gain stages. Ceramic flange mounting integrates directly with heatsink assemblies used in outdoor repeater enclosures. Operated below rated Pout for linearity, the part provides robust long-term performance in continuous-duty repeater service.
Рекомендуется
High-Power RF Transmitter Final Stage
Beyond cellular, the MRF8P18265HSR5 serves as a high-power final stage in industrial and scientific RF transmitters operating in the 1.8-1.9 GHz ISM-adjacent band. Its 72 W output and HV8 LDMOS ruggedness suit pulsed or CW applications including RF heating, plasma generation, and accelerator cavity drivers. The 65 V breakdown gives headroom for inductive load transients, and the ceramic package supports high-duty-cycle operation. Designers pair it with circulator/isolator protection to handle reflected power. The 30 V test condition provides a usable bias point for non-cellular waveforms.
Рекомендуется
Multi-Carrier GSM Power Amplifier
In multi-carrier GSM combiner amplifiers, the MRF8P18265HSR5's 72 W Pout allows several carriers to be combined into a single high-power final stage. The LDMOS device's excellent intermodulation distortion performance preserves signal integrity across closely packed GSM channels. The 16 dB gain reduces driver-stage requirements, and the NI 1230S-8 ceramic flange provides the thermal headroom for continuous multi-carrier operation. Bias sequencing and VSWR protection must be implemented per NXP application notes for reliable multi-carrier service.
Рекомендуется
5G NR Band 3 Refit / Legacy 4G Migration
The MRF8P18265HSR5 can be used in 5G NR Band 3 (1800 MHz) base-station upgrades where existing 4G PA lineups are being refit for 5G NR operation. Its 1.88 GHz target frequency covers the n3 downlink band with appropriate matching network adjustment. The 72 W peak power supports the high crest-factor OFDM signals of 5G NR. For new 5G mMIMO and higher-band designs, NXP recommends the GaN-based Airfast portfolio, but the MRF8P18265HSR5 remains a cost-effective choice for Band 3 refits where the existing Doherty infrastructure can be reused.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF8P18265HSR5 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF8P18265HR6 | MRF8P18265HBR5 | MRF8P20160HSR5 | MRF8P18125HSR5 | MRF7S38010HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors (Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI 1230S-8 (ceramic flange) | NI 1230S-8 - same | NI 1230S-8 - same | NI 1230S-8 - same | NI 1230S-8 - same | NI 780S-8 - same family, different variant |
| Operating Frequency | 1.88 GHz | 1.88 GHz | 1.88 GHz | 2.0 GHz | 1.8 GHz | 3.8 GHz |
| Output Power (Pout) | 72 W | 72 W | 72 W | ~50 W | ~50 W | 10 W |
| Vds Rating | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Doherty Role | Peaking amplifier | Main/Carrier amplifier | Peaking amplifier | Peaking amplifier | Peaking amplifier | Driver stage |
Ключевые отличия
- Purpose-optimized for 1.88 GHz Doherty peaking (против MRF8P18265HR6)
- Higher peak power than MRF8P20160HSR5 in same package (против MRF8P20160HSR5)
- Lower-band (1.88 GHz) focus vs MRF7S38010HR3 (против MRF7S38010HR3)
Заметки по проектированию
At 72 W Pout and ~50% drain efficiency, the MRF8P18265HSR5 dissipates approximately 50 W internally as heat. The NI 1230S-8 ceramic flange must be bolted to a heatsink or cold plate with thermal interface material (TIM) rated for high power. Estimated: with theta_JC of ~0.3 C/W and a properly mounted cold plate at 50 C, junction temperature rise is ~15 C above cold plate, comfortably below the 200 C rating. Insufficient heatsinking is the leading cause of premature RF transistor failure.
Use a star-ground bias layout with gate and drain supplies decoupled close to the package leads. Place 100 nF and 10 uF ceramic bypass capacitors on both VG and VD rails within 5 mm of the bias pins. The RF input and output traces must be 50-ohm microstrip lines on a low-loss substrate (Rogers RO4350B recommended for 1.88 GHz). Apply VG before VD during turn-on and reverse the sequence at turn-off to prevent thermal runaway.
Do not exceed the 65 V Vds rating even under transient overshoot - a TVS diode or clamp circuit on the drain rail is recommended. The quiescent current (Idq) must be set per the NXP datasheet (typically 50-200 mA for Doherty peaking); too high Idq destroys efficiency, too low causes gain ripple. Verify VSWR protection (circulator or isolator) before applying full RF drive, as LDMOS devices can fail catastrophically under open or short load conditions.
For Doherty operation, the phase relationship between main and peaking amplifiers must be precisely controlled at 1.88 GHz. Use a 90-degree hybrid combiner or appropriate offset lines per NXP application note AN1908. Mismatched phase reduces Doherty efficiency gain and can cause instability. Always verify stability with a small-signal network analyzer before high-power testing.
Информация о соответствии
RoHS/REACH/lead-free status not present in verified web data. The MRF8P18265HSR5 is not AEC-Q100 qualified - it is a high-power RF transistor for telecom infrastructure, not automotive. Conflict minerals status should be requested directly from NXP under their standard supply-chain disclosure process.
