MRF8S9202NR3 - 58W 920-960MHz RF Power MOSFET | NXP
N.º de pieza: MRF8S9202NR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $86.5 | $865,00 |
| 100 | $78.2 | $7.820,00 |
| 250 | $71 | $17.750,00 |
| 500 | $64.8 | $32.400,00 |
MRF8S9202NR3 Descripción general
An RF Power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor engineered to deliver radio-frequency power amplification, typically used in the final power amplifier (PA) stage of a transmitter. Unlike small-signal MOSFETs used in digital logic, RF power MOSFETs feature low parasitic capacitances, high breakdown voltage, and robust thermal management to handle continuous high-power RF energy. Within the broader taxonomy, RF power MOSFETs belong to discrete semiconductors -> transistors -> MOSFETs -> RF MOSFETs, and ultimately to RF & wireless power amplification chain components.
Key specifications include an operating frequency range of 920-960 MHz, 58 W average output power (W-CDMA), 28 V drain supply voltage (VDD), 1.3 A quiescent drain current (IDQ), 19 dB power gain, and a minimum drain-source breakdown voltage of 70 V. The OM-780-2 ceramic package provides a hermetic seal and a low-thermal-resistance path, critical for maintaining junction temperature under continuous RF drive. The device is rated for surface-mount installation and supports the high thermal flux inherent to base-station duty cycles.
Architecturally, the MRF8S9202NR3 uses a lateral N-channel enhancement-mode MOSFET structure, which minimizes feedback capacitance (Crss) and supports broadband gain at 900 MHz. The HV8 process enables 28 V operation with high breakdown margin, reducing the need for elaborate over-voltage protection in the final-stage amplifier module.
Typical applications include W-CDMA/LTE base-station PAs at 900 MHz, GSM/EDGE linear amplifier drivers, industrial RF heating at the 900 MHz ISM band, and military/commercial radio links. The wide breakdown margin (70 V) supports rugged operating conditions at high VSWR loads common in cellular infrastructure.
When designing with the MRF8S9202NR3, ensure the PCB land pattern follows the OM-780-2 recommended footprint and that the heat-spreader is properly bolted to the PCB ground pour with adequate thermal compound. Bias sequencing should bring gate voltage up before drain voltage to avoid parametric drift.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet with engineering context not always surfaced in stock aggregator listings.
Alternativas directas para MRF8S9202NR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF8S9202NR3 (mismo factor de forma y huella) — difiere en Mounting Type, Operating Mode, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF8S9202GNR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8S9102NR3
✅ Sustitución directa✓ En stock
$24.1 / unidad
Ver hoja de datos →MRF8S9202NR3 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Active |
| Tipo de transistor | N-Channel Lateral MOSFET |
| Configuration | Single |
| Frequency Range | 920 MHz to 960 MHz |
| Test Frequency | 920 MHz |
| Output Power (W-CDMA Average) | 58 W |
| Power Gain (typ) | 19 dB at 920 MHz |
| Drain Supply Voltage (VDD) | 28 V |
| Quiescent Drain Current (IDQ) | 1300 mA |
| Drain Current (operating) | 1.3 A |
| Min Drain-Source Breakdown Voltage | 70 V |
| Encapsulado / Carcasa | OM-780-2 (ceramic air-cavity) |
| Tipo de montaje | Surface Mount |
| Operating Mode | Class AB and Class C |
| Modulation Support | Single W-CDMA, CDMA, GSM/EDGE |
| Estado RoHS | Compliant |
Configuración de pines de MRF8S9202NR3
| Pin 1 | Gate — RF input / gate bias |
| Pin 2 | Drain — RF output / drain supply (VDD) |
| Pin 3 | Source — DC and RF ground via package flange |
| Pin 4 | Flange — Thermal and electrical ground; bolt to PCB copper pour |
DC Área de funcionamiento seguro (MRF8S9202NR3)
Aplicaciones típicas
MRF8S9202NR3 es adecuado para 6 aplicacións: W-CDMA Base Station Power Amplifier, GSM/EDGE Linear Amplifier Driver, LTE Band 8 Cellular Infrastructure, Industrial RF Heating at 900 MHz ISM Band, Military and Commercial Radio Links, RFID and IoT Reader Infrastructure.
W-CDMA Base Station Power Amplifier
The MRF8S9202NR3 is purpose-built for 920-960 MHz W-CDMA Band 8 base-station final-stage PAs. With 58 W average output and 19 dB gain at the 920 MHz test frequency, it drives the antenna chain after digital predistortion (DPD) correction with adequate linear-power margin. The OM-780-2 ceramic package's hermetic seal and low RthJC support continuous base-station duty cycles at 28 V VDD. Paired with the NXP MRF8S9102NR3 for receive-side diversity paths, this part enables multi-sector base-station arrays. Compared to lower-frequency 900 MHz parts, the 920-960 MHz optimization reduces matching-network losses and improves drain efficiency.
Recomendado
GSM/EDGE Linear Amplifier Driver
For GSM-900 and EDGE base-station transmitters operating 925-960 MHz, the MRF8S9202NR3 provides the linear-power headroom needed for 8-PSK modulation while still operating from a 28 V rail. The 19 dB gain reduces pre-driver stage count, simplifying the overall BOM. Designers typically bias at Class AB with IDQ = 1300 mA to balance linearity and efficiency. The OM-780-2 package handles the thermal flux of continuous GMSK bursts at 58 W without exceeding the rated junction temperature.
Recomendado
LTE Band 8 Cellular Infrastructure
The 920-960 MHz band aligns directly with LTE Band 8 uplink, making the MRF8S9202NR3 a strong fit for 4G LTE small-cell and macro-cell base-station final amplifier stages. The 70 V minimum breakdown voltage gives substantial margin against VSWR-induced over-voltage, a common reliability concern at high output power. With 58 W average output, the part provides headroom for multi-carrier LTE aggregation scenarios. The NXP datasheet MRF8S9202N documents ACLR performance suitable for LTE resource-block allocations in dense urban deployments.
Recomendado
Industrial RF Heating at 900 MHz ISM Band
The 900 MHz ISM band overlaps with the MRF8S9202NR3's operating frequency range, enabling industrial RF heating, drying, and curing applications that benefit from the device's 58 W continuous output and 28 V supply. Industrial installations often use Class C biasing for maximum efficiency, which the MRF8S9202NR3 supports natively. The ceramic OM-780-2 package withstands the elevated ambient temperatures of industrial enclosures. Compared to lower-power RF transistors, the MRF8S9202NR3 reduces amplifier chain complexity by handling the full output power in a single stage.
Recomendado
Military and Commercial Radio Links
Tactical radio and point-to-point microwave links in the 900 MHz region benefit from the MRF8S9202NR3's rugged 70 V breakdown rating and Class C capability. Military radio designers value the OM-780-2 ceramic package's hermetic seal for harsh-environment operation. The 58 W output supports long-range communications where antenna gain and free-space path loss dominate the link budget. The wide operating bandwidth also makes the device useful for frequency-agile radios in this region.
Recomendado
RFID and IoT Reader Infrastructure
High-power UHF RFID readers operating in the 920-960 MHz regulatory bands can leverage the MRF8S9202NR3 for long-range tag interrogation. The 58 W output drives reader antennas with sufficient EIRP to meet regulatory limits while maintaining reader sensitivity. With proper matching network design, the device can also serve fixed-position IoT gateway transmitters in industrial IoT deployments. The 28 V supply rail simplifies integration with standard telecom DC bus architectures.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF8S9202NR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF8S9202GNR3 | MRF8S9102NR3 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | OM-780-2 | OM-780-2 - same | OM-780-2 - same |
| Frequency Range | 920-960 MHz | 920-960 MHz | 800-900 MHz (lower band) |
| Output Power (W-CDMA avg) | 58 W | 58 W | Similar power in lower band |
| Drain Supply Voltage (VDD) | 28 V | 28 V | 28 V |
| Power Gain (typ) | 19 dB at 920 MHz | 19 dB at 920 MHz | 19 dB at 880 MHz |
| Min Drain-Source Breakdown Voltage | 70 V | 70 V | 70 V |
| Quiescent Drain Current (IDQ) | 1300 mA | 1300 mA | Similar IDQ band |
Diferenciadores clave
- Higher-power 920-960 MHz band optimization (frente a MRF8S9102NR3)
- Same-die drop-in alternative with packaging code variation (frente a MRF8S9202GNR3)
- Lower-power positioning vs higher-output MRFE6S9205HSR3 (frente a MRFE6S9205HSR3)
Notas de diseño
The OM-780-2 ceramic package relies on the copper heat-spreader flange to conduct heat into the PCB ground pour. Estimated: at 58 W average output and 28 V VDD, internal dissipation can reach approximately 14 W; the PCB needs at least 4 square inches of 2 oz copper directly beneath the flange, supplemented with thermal compound. Without adequate heatsinking, junction temperature will exceed the 200 C rating under continuous W-CDMA drive.
Use the NXP OM-780-2 recommended land pattern with controlled-impedance 50 ohm microstrip lines on the gate (input) and drain (output) sides. Place DC feed resistor networks within 5 mm of the gate lead to suppress parasitic oscillation. The ceramic package's low lead inductance makes the device sensitive to via stub length - back-drives the PCB via fence around the RF traces to ground to avoid parallel-plate modes at 920 MHz.
Sequencing matters: bring the gate bias up before applying the 28 V drain supply to avoid parametric drift and possible device damage from operation in the ohmic region. Use a gate voltage regulator with controlled slew rate (typically 1 V/ms). According to the NXP datasheet MRF8S9202N, the part requires an IDQ setting of 1300 mA for rated W-CDMA performance; bias networks must be temperature-compensated to maintain IDQ across the operating temperature range.
Do not assume 50 ohm source/load impedance is sufficient - the MRF8S9202NR3 requires impedance matching networks optimized for 920-960 MHz and the specific load-line target. Mismatched loads can drive the part into oscillation or exceed the 70 V breakdown rating. Always include a circulator or isolator at the output for VSWR protection in base-station applications. Verify harmonic content with a spectrum analyzer; second-harmonic traps at the output are commonly required to meet regulatory emission masks.
Información de cumplimiento
RoHS compliant per NXP product page and DigiKey/Mouser listings. REACH compliant per NXP material declaration. AEC-Q100 not applicable - this is an RF power MOSFET for base-station infrastructure, not automotive electronics. Halogen-free status not explicitly confirmed in the provided data and listed as 'unknown'.
