MRFG35005NR5 - 4.5W 3.55GHz pHEMT RF FET | NXP Semiconductors
N.º de pieza: MRFG35005NR5 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.85 | $3.185,00 |
| 500 | $28.4 | $14.200,00 |
| 1.000 | $25.75 | $25.750,00 |
MRFG35005NR5 Descripción general
What is a pHEMT RF power FET? A pHEMT (pseudomorphic High Electron Mobility Transistor) is a GaAs-based RF transistor technology that uses a heterojunction between materials with different bandgaps to confine electrons in a high-mobility quantum well. The 'pseudo' prefix refers to the lattice-mismatch accommodation in the epitaxial layers. In the broader taxonomy, pHEMT sits under RF MOSFET -> RF FET -> discrete semiconductor -> power amplifier building block, prized for high gain and efficiency at microwave frequencies where silicon LDMOS and CMOS struggle.
Key features include a 3.55 GHz nominal operating frequency, 11 dB power gain, 4.5 W output power capability, and a 15 V maximum drain rating. The PLD-1.5 package is a flange-mount ceramic air-cavity design with bolt-down RF and DC leads, providing excellent thermal transfer to the system heatsink and shielding the die from environmental contamination. The device is characterized for pulsed RF operation typical of radar and telemetry links.
Technically, the device uses an N-channel pHEMT die configured as a common-source RF amplifier stage. Bias is set by a negative gate-source voltage to establish quiescent current at 80 mA, after which RF drive swings the drain waveform into compression to deliver rated output. The 11 dB gain makes it well-suited as a driver stage for higher-power amplifiers.
Typical applications include S-band radar transmitters, 3.5 GHz WiMAX/LTE fixed wireless links, telemetry transponders, and industrial RF heating oscillators. The PLD-1.5 flange-mount construction is intended for chassis-integrated RF subsystems rather than SMT reflow assembly.
Design considerations include a mandatory external heatsink bolted to the package flange, properly sequenced gate biasing before RF drive, and 50-ohm matching networks at input and output. The datasheet should be consulted for load-pull contours and bias-dependent gain curves.
This page synthesizes current distributor pricing, parametrically verified drop-in alternatives, and practical RF design guidance not consolidated in the manufacturer datasheet.
Alternativas directas para MRFG35005NR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRFG35005NR5 (mismo factor de forma y huella) — difiere en Configuration, Current Rating, Mounting Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRFG35010NR5
✅ Sustitución directa✓ En stock
$9.6 / unidad
Ver hoja de datos →MRFG35015NR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRFG35005ANR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRFE6S9045NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFG35005NR5 Valores máximos y características eléctricas
| Tipo de transistor | pHEMT FET |
| Configuration | Single, N-Channel |
| Operating Frequency | 3.55 GHz |
| Power Gain | 11 dB |
| Output Power | 4.5 W |
| Test Voltage | 12 V |
| Quiescent Current (Idq) | 80 mA |
| Drain-Source Voltage Rating | 15 V |
| Current Rating | 1.7 A |
| Encapsulado / Carcasa | PLD-1.5 |
| Supplier Device Package | PLD-1.5 |
| Tipo de montaje | Flange / Chassis Mount |
| Technology | GaAs pHEMT |
| Packaging | Bulk / Tape & Reel |
| Part Status | Obsolete |
Configuración de pines de MRFG35005NR5
| Pin 1 | GATE — RF input / gate bias |
| Pin 2 | DRAIN — RF output / drain bias (12 V typical) |
| Pin 3 | FLANGE — Source / thermal ground (bolted to heatsink) |
Área de funcionamiento seguro (DC, estimated)
Aplicaciones típicas
MRFG35005NR5 es adecuado para 6 aplicacións: S-Band Radar Transmitter, 3.5 GHz WiMAX / Fixed Wireless Link, Telemetry and Command Transponder, Industrial RF Heating Oscillator, Microwave Driver Stage, Amateur Radio / Experimental Microwave.
S-Band Radar Transmitter
The MRFG35005NR5's 3.55 GHz nominal frequency and 4.5 W output power position it well for S-band radar transmitter driver stages. The 11 dB gain amplifies a low-power CW or pulsed exciter up to 4.5 W, sufficient for short-range surveillance and weather radar front-ends. Bias at 12 V with 80 mA Idq establishes Class AB operation that balances efficiency with linearity. The PLD-1.5 flange-mount package bolts directly to the radar chassis heatsink, providing the thermal dissipation needed for sustained pulse operation at moderate duty cycles.
Recomendado
3.5 GHz WiMAX / Fixed Wireless Link
The MRFG35005NR5 is a strong fit for 3.5 GHz WiMAX (IEEE 802.16d/e) and licensed fixed-wireless customer-premises equipment where the 3.55 GHz band aligns with regulatory allocations. With 4.5 W output and 11 dB gain, it serves as the final RF stage in subscriber-station transmitters or as a driver in higher-EIRP base-station designs. The pHEMT technology delivers efficiency advantages at these microwave frequencies where silicon LDMOS loses gain. External 50-ohm matching networks and a properly bolted heatsink are required for stable Class AB linear amplification.
Recomendado
Telemetry and Command Transponder
For S-band telemetry uplink transmitters in UAVs, missile test ranges, and industrial data links, the MRFG35005NR5 provides 4.5 W of clean pulsed RF power at 3.55 GHz. The pHEMT device supports both CW and pulsed operation, and the 11 dB gain simplifies driver-stage design by allowing a low-power synthesizer to drive the final directly. The PLD-1.5 ceramic air-cavity package shields the die from humidity and contamination, critical for outdoor or aerospace deployments where conformal coating alone is insufficient.
Recomendado
Industrial RF Heating Oscillator
At 3.55 GHz the MRFG35005NR5 is well within the industrial, scientific, and medical (ISM) band near 3.45 GHz used for plastic welding, drying, and plasma generation. The 4.5 W output drives small resonant cavity applicators, and the pHEMT technology tolerates the high VSWR conditions typical of unmatched heating loads. The PLD-1.5 package flange provides the thermal headroom needed for continuous duty operation in industrial environments. Designers should use circulator protection or limit reflected power to avoid exceeding the 15 V drain rating under load mismatch.
Recomendado
Microwave Driver Stage
With 11 dB power gain and 4.5 W output, the MRFG35005NR5 is purpose-built as a driver stage for higher-power GaN or GaAs final amplifiers in point-to-point radio links and EW (electronic warfare) jammers. Driving a 25-50 W final, the MRFG35005NR5 receives tens of milliwatts from an upstream synthesizer and delivers the 4.5 W needed to saturate the final. The PLD-1.5 package matches the mechanical form factor of typical higher-power finals, allowing shared heatsink and chassis design across the amplifier chain.
Recomendado
Amateur Radio / Experimental Microwave
Hams operating in the 9 cm amateur microwave band (3.3-3.5 GHz) and experimental microwave designers can leverage the MRFG35005NR5 as a small-signal final or driver. The 4.5 W output is appropriate for tropo and aurora contacts with modest antenna gain. Because the part is now obsolete, the open amateur market often has factory-traceable stock at favorable prices compared to commercial channels. The PLD-1.5 flange-mount construction integrates cleanly into a homebrew chassis with bolt-down heatsink and SMA lead connections.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRFG35005NR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRFG35010NR5 | MRFG35015NR5 | MRFG35005ANR5 | MRFE6S9045NR1 |
|---|---|---|---|---|---|
| Package | PLD-1.5 | PLD-1.5 (same) | PLD-1.5 (same) | PLD-1.5 (same) | PLD-1.5 (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 3.55 GHz | 3.55 GHz | 3.55 GHz | 3.55 GHz | 900 MHz |
| Output Power | 4.5 W | 10 W | 15 W | 4.5 W | 45 W |
| Test Voltage | 12 V | 12 V | 12 V | 12 V | 28 V |
| Technology | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | LDMOS |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Diferenciadores clave
- Higher output power in same PLD-1.5 footprint (frente a MRFG35005NR5 vs MRFG35010NR5)
- S-band optimized vs sub-GHz LDMOS (frente a MRFG35005NR5 vs MRFE6S9045NR1)
- Identical revision-marked variant (frente a MRFG35005NR5 vs MRFG35005ANR5)
Notas de diseño
The PLD-1.5 flange MUST be bolted to a system heatsink with the recommended torque before applying RF drive. Estimated: at 4.5 W output, 12 V / 80 mA Idq bias and ~40% DC-RF efficiency, the device dissipates roughly 6-7 W of waste heat. Without a bolted heatsink, junction temperature will exceed the 175 C datasheet limit within seconds. Apply a thin layer of thermal compound between flange and heatsink and verify surface flatness within 0.05 mm.
Gate bias MUST be applied before drain voltage, and drain voltage MUST be sequenced off before gate bias to prevent thermal runaway. The pHEMT gate is ESD-sensitive - handle with grounding straps and never apply RF drive without confirmed Idq of 80 mA. Reverse bias on the gate can permanently shift the threshold voltage and reduce output power across the device lifetime.
Input and output matching networks should be designed on low-loss PCB substrate (Rogers RO4003C or equivalent) with 50-ohm microstrip traces. Place gate and drain feed capacitors within 5 mm of the package leads. The source (flange) ground path must be electrically continuous - use multiple via fences around the matching network ground pours to minimize lead inductance at 3.55 GHz. Add a 10 dB pad or isolator at the output to protect against load VSWR excursions during transients.
Información de cumplimiento
Compliance status not present in verified web data. The PLD-1.5 ceramic air-cavity package and gold-plated leads typically support lead-free assembly, but RoHS/REACH compliance should be confirmed against the original NXP datasheet or manufacturer declaration before use in regulated markets.
