STL125N10F8AG - 100V N-Channel Power MOSFET | STMicroelectronics
N.º de pieza: STL125N10F8AG ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.82 | $1.820,00 |
STL125N10F8AG Descripción general
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management systems, including DC-DC converters, motor drives, and battery protection circuits. They are part of the broader category of discrete semiconductors, which also includes diodes, IGBTs, and thyristors.
Key features of the STL125N10F8AG include a low on-state resistance (RDS(on)) of 4.5 mOhm (typical) at VGS=10V, which minimizes conduction losses and improves overall system efficiency. The device also offers a fast switching speed, with a total gate charge (Qg) of 60 nC, enabling high-frequency operation. The PowerFLAT 5x6 package provides a low thermal resistance of 1.2 C/W (junction-to-case), allowing efficient heat dissipation in high-power applications.
The STL125N10F8AG is built using STMicroelectronics' advanced PowerMESH technology, which enhances the device's ruggedness and reliability. The MOSFET features an integrated gate-source ESD protection, improving its robustness in harsh environments. The device is AEC-Q101 qualified, making it suitable for automotive applications that require high reliability and performance under extreme conditions.
Typical applications include DC-DC converters, motor control, battery management systems, and power supply units. In automotive systems, the STL125N10F8AG is used in electric power steering, engine control units, and LED lighting. Its low RDS(on) and high current capability make it ideal for synchronous rectification in switch-mode power supplies, where efficiency is critical.
When designing with this MOSFET, it is important to consider the gate drive voltage and switching frequency to optimize performance. The device requires a gate voltage of at least 10V to achieve the lowest RDS(on). Additionally, proper PCB layout with adequate copper area for heat sinking is essential to maintain junction temperature within safe limits.
Alternativas directas para STL125N10F8AG — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
STL120N10F7
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
STL110N10F7
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STL140N10F7
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STL125N10F8AG Valores máximos y características eléctricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 125 A |
| On-State Resistance (RDS(on)) | 4.5 mOhm (typical) at VGS=10V |
| Total Gate Charge (Qg) | 60 nC |
| Gate-Source Voltage (VGS) | ±20 V |
| Power Dissipation (PD) | 150 W |
| Rango de temperatura de funcionamiento | -55C to +175C |
| Encapsulado | PowerFLAT 5x6 |
| Tipo de montaje | Surface Mount |
| Thermal Resistance (Junction-to-Case) | 1.2 C/W |
| AEC-Q101 Qualified | Yes |
| ESD Protection | Integrated gate-source ESD protection |
| RoHS Compliant | Yes |
| Technology | PowerMESH |
Configuración de pines de STL125N10F8AG
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | D — Drain |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Área de funcionamiento seguro
Aplicaciones típicas
STL125N10F8AG es adecuado para 6 aplicacións: DC-DC Converters, Motor Control, Battery Management Systems, Power Supply Units, Automotive LED Lighting, Electric Power Steering.
DC-DC Converters
The STL125N10F8AG is ideal for DC-DC converters due to its low RDS(on) of 4.5 mOhm, which minimizes conduction losses and improves efficiency. In a typical synchronous buck converter, the MOSFET is used as the high-side and low-side switch, handling high currents with minimal heat generation. The low gate charge of 60 nC enables fast switching, reducing switching losses at high frequencies. The PowerFLAT 5x6 package provides excellent thermal performance, allowing the device to dissipate up to 150W. For a 12V to 5V conversion at 20A, the power loss is approximately 1.8W, making it suitable for high-efficiency power supplies. The AEC-Q101 qualification ensures reliability in automotive-grade DC-DC converters.
Recomendado
Motor Control
In motor control applications, the STL125N10F8AG provides high current capability (125A) and low on-state resistance, enabling efficient drive of brushed and brushless DC motors. The fast switching speed allows for PWM control at frequencies up to 20kHz, reducing audible noise. The device's ruggedness, including integrated ESD protection, ensures reliable operation in industrial environments. For a 48V motor drive, the MOSFET can handle peak currents of up to 125A, making it suitable for electric vehicles and industrial automation. The PowerFLAT 5x6 package allows for compact motor controller designs with proper thermal management. The AEC-Q101 qualification makes it suitable for automotive motor control, such as electric power steering and cooling fans.
Recomendado
Battery Management Systems
The STL125N10F8AG is used in battery management systems (BMS) for battery protection and balancing. Its low RDS(on) minimizes power loss during charging and discharging, improving overall system efficiency. The high current rating (125A) supports high-capacity battery packs in electric vehicles and energy storage systems. The device's fast switching capability enables precise control of charge and discharge currents. The AEC-Q101 qualification ensures reliability in automotive BMS applications. In a typical BMS, the MOSFET is used as a load switch in the discharge path, with a voltage rating of 100V providing adequate margin for battery voltages up to 72V. The PowerFLAT 5x6 package allows for compact BMS designs.
Recomendado
Power Supply Units
In power supply units (PSUs), the STL125N10F8AG is used in the switching stage for AC-DC and DC-DC conversion. Its low RDS(on) and fast switching speed reduce losses, improving efficiency and reducing heat sink requirements. The device can handle high currents, making it suitable for server and telecom power supplies. The PowerFLAT 5x6 package provides low thermal resistance, allowing for efficient heat dissipation. For a 1kW PSU, the MOSFET can be used in a synchronous rectification stage, where its low RDS(on) significantly reduces conduction losses compared to Schottky diodes. The AEC-Q101 qualification is not required for non-automotive PSUs, but the device's ruggedness ensures long-term reliability.
Recomendado
Automotive LED Lighting
The STL125N10F8AG is suitable for automotive LED lighting applications, such as headlights and daytime running lights. Its high current capability and low RDS(on) enable efficient driving of high-power LEDs. The AEC-Q101 qualification ensures reliability in harsh automotive environments, including temperature extremes and vibration. The device's fast switching speed allows for PWM dimming at high frequencies, enabling precise brightness control. In a typical LED driver, the MOSFET is used as a switch in a buck converter, converting the vehicle's 12V or 24V supply to the LED's forward voltage. The PowerFLAT 5x6 package allows for compact LED driver designs.
Recomendado
Electric Power Steering
In electric power steering (EPS) systems, the STL125N10F8AG is used in the motor drive circuit to control the steering assist motor. Its high current capability (125A) and low RDS(on) ensure efficient power delivery, reducing energy consumption and heat generation. The AEC-Q101 qualification guarantees reliability in automotive environments, where the device is subjected to high temperatures and mechanical stress. The fast switching speed enables smooth motor control, improving steering feel and responsiveness. The PowerFLAT 5x6 package allows for compact EPS controller designs, which is critical for space-constrained under-hood applications.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para STL125N10F8AG — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | STL120N10F7 | STL110N10F7 | STL140N10F7 |
|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 125 A | 120 A | 110 A | 140 A |
| On-State Resistance (RDS(on)) | 4.5 mOhm | 6.5 mOhm | 7.5 mOhm | 3.8 mOhm |
| Total Gate Charge (Qg) | 60 nC | 55 nC | 50 nC | 70 nC |
| Power Dissipation (PD) | 150 W | 140 W | 130 W | 160 W |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes |
Diferenciadores clave
- Lower RDS(on) compared to STL120N10F7 (frente a STL120N10F7)
- Higher current rating than STL110N10F7 (frente a STL110N10F7)
- AEC-Q101 qualification for automotive use (frente a IPB125N10N3G)
Notas de diseño
The STL125N10F8AG can dissipate up to 150W, but the junction temperature must be kept below 175C. With a junction-to-case thermal resistance of 1.2 C/W, a heatsink or large copper area is required for high-power operation. For example, at 50W dissipation, the case temperature rise is 60C above ambient, so ensure adequate cooling.
Place the MOSFET close to the gate driver to minimize gate loop inductance. Use wide, short traces for the drain and source connections to reduce parasitic inductance and resistance. A solid ground plane under the device helps with heat dissipation and reduces EMI.
Do not exceed the maximum gate-source voltage of ±20V. Use a gate driver with appropriate voltage levels to avoid damaging the gate oxide. Also, ensure the drain-source voltage does not exceed 100V, especially during switching transients, by using proper snubber circuits if necessary.
Información de cumplimiento
AEC-Q101 qualified per STMicroelectronics datasheet. RoHS compliant. REACH compliance assumed based on STMicroelectronics policy.