STL15N60M6 - 15A, 600V N-Channel Power MOSFET | STMicroelectronics
N.º de pieza: STL15N60M6 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.45 | $145,00 |
| 500 | $1.25 | $625,00 |
| 1.000 | $1.1 | $1.100,00 |
STL15N60M6 Descripción general
What is a Power MOSFET? A Power MOSFET is a type of metal-oxide-semiconductor field-effect transistor optimized for high voltage and high current switching applications. It operates as a voltage-controlled switch, where the gate-to-source voltage (VGS) controls the conduction between drain and source. Power MOSFETs are fundamental building blocks in power electronics, serving as the switching elements in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speed and low drive power requirements.
Key features of the STL15N60M6 include a very low gate charge (Qg) of 28 nC (typical), which enables fast switching and reduces driver losses. The device also offers a low output capacitance (Coss) of 95 pF, minimizing switching losses in resonant topologies. The MDmesh M6 technology provides an excellent figure of merit (RDS(on) x Qg), making it suitable for high-efficiency power supplies. The device is RoHS compliant and halogen-free, meeting modern environmental standards.
Technically, the STL15N60M6 utilizes a vertical DMOS structure with a striped layout, optimizing current spreading and reducing on-resistance. The MDmesh M6 process incorporates a charge-balanced structure that reduces the on-resistance while maintaining high breakdown voltage, a key advantage over conventional planar MOSFETs. The device features an integrated gate-source ESD protection diode, enhancing robustness in harsh environments. The PowerFLAT 5x6 package has a low thermal resistance (RthJA) of 62.5 °C/W, allowing efficient heat dissipation when mounted on a suitable PCB copper area.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In an SMPS, the STL15N60M6 can be used as the main switching element in a flyback or forward converter topology, where its low gate charge and fast switching speed enable high-frequency operation, reducing transformer size and improving power density. In PFC circuits, the device's low on-resistance minimizes conduction losses, improving overall efficiency.
When designing with the STL15N60M6, ensure adequate gate drive voltage (typically 10V) to fully enhance the channel and achieve the specified on-resistance. The device is not avalanche-rated, so external clamping or snubber circuits may be required in inductive load switching applications to prevent overvoltage stress. Proper PCB layout with short, wide traces for the drain and source connections is essential to minimize parasitic inductance and ensure reliable operation at high frequencies.
Alternativas directas para STL15N60M6 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
STL15N60M2-EP
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STL15N60M6-EP
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
IPD60R280P7
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
AOT15N60
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STL15N60M6 Valores máximos y características eléctricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 15 A |
| Continuous Drain Current (ID) at 100°C | 9.5 A |
| Pulsed Drain Current (IDM) | 45 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-Resistance (RDS(on)) at VGS=10V | 0.28 ohm (typical) |
| Total Gate Charge (Qg) | 28 nC (typical) |
| Output Capacitance (Coss) | 95 pF (typical) |
| Input Capacitance (Ciss) | 1100 pF (typical) |
| Power Dissipation (PD) at 25°C | 2.4 W |
| Rango de temperatura de funcionamiento | -55°C to +150°C |
| Encapsulado | PowerFLAT 5x6 |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Sin halógenos | Yes |
Configuración de pines de STL15N60M6
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | D — Drain |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | S — Source |
Área de funcionamiento seguro
Aplicaciones típicas
STL15N60M6 es adecuado para 6 aplicacións: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Motor Drives, Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STL15N60M6 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a flyback converter, the MOSFET switches at high frequency, and its low gate charge (28 nC) reduces driver losses, enabling higher efficiency. The low output capacitance (95 pF) minimizes switching losses, allowing operation at frequencies up to 100 kHz. The PowerFLAT 5x6 package's low thermal resistance (62.5 °C/W) helps dissipate heat from conduction and switching losses, ensuring reliable operation in compact power supplies. Compared to IGBTs, the MOSFET's fast switching speed reduces transformer size, improving power density. Designers should ensure proper gate drive voltage (10V) and snubber circuits to manage voltage spikes from transformer leakage inductance.
Recomendado
Power Factor Correction (PFC)
In boost PFC circuits, the STL15N60M6 operates as the switching element to shape the input current waveform. Its 600V rating provides ample margin for the boosted output voltage (typically 400V). The low on-resistance (0.28 ohm) minimizes conduction losses, which is critical for meeting efficiency standards like 80 PLUS. The fast switching speed, enabled by low gate charge, allows the use of smaller magnetic components, reducing the overall size of the PFC stage. The device's low output capacitance reduces switching losses in continuous conduction mode (CCM) operation. For high-power PFC (above 1kW), consider paralleling two devices to reduce current stress. Proper heat sinking is essential, as PFC circuits often operate at high duty cycles.
Recomendado
LED Lighting Drivers
The STL15N60M6 is well-suited for LED drivers, particularly in offline applications where high voltage (up to 600V) is present. In a single-stage flyback LED driver, the MOSFET switches at high frequency to regulate output current. Its low gate charge reduces the power consumed by the gate driver, improving overall efficiency, which is crucial for meeting energy regulations. The low on-resistance minimizes conduction losses, allowing the driver to operate at higher currents without excessive heat. The PowerFLAT 5x6 package is compact, enabling slim LED driver designs. For dimming applications, the fast switching speed supports PWM dimming without audible noise. Designers should ensure the MOSFET's SOA is not exceeded during startup transients, and use appropriate snubber circuits to suppress ringing.
Recomendado
DC-DC Converters
In isolated DC-DC converters, such as forward or push-pull topologies, the STL15N60M6 serves as the primary-side switch. Its 600V rating is suitable for input voltages up to 400V from a PFC stage. The low on-resistance reduces conduction losses, improving efficiency in high-current applications. The fast switching speed, enabled by low gate charge, allows operation at high frequencies, reducing the size of the transformer and output filters. The device's low output capacitance minimizes ringing and switching losses. For synchronous rectification on the secondary side, complementary MOSFETs can be used. Proper layout is critical to minimize parasitic inductance, which can cause voltage spikes. The device's thermal performance is adequate for most DC-DC converter designs with proper PCB copper area.
Recomendado
Motor Drives
The STL15N60M6 can be used in motor drive applications, particularly for variable frequency drives (VFDs) and servo drives. Its 600V rating is suitable for three-phase AC motor drives operating from 230V or 400V mains. The low on-resistance minimizes conduction losses, which is important for continuous operation. The fast switching speed enables PWM control at frequencies up to 20 kHz, reducing audible noise. The device's ruggedness, including a wide SOA, ensures reliable operation under inductive load switching. However, for high-power motor drives (above 2kW), IGBTs may be preferred due to their lower conduction losses at high currents. For low-power drives, the STL15N60M6 offers a cost-effective solution. Proper gate drive and protection circuits are essential to prevent shoot-through and overvoltage.
Recomendado
Solar Inverters
In solar microinverters and string inverters, the STL15N60M6 is used in DC-DC boost stages and DC-AC inverter stages. Its 600V rating is suitable for PV panel voltages up to 500V. The low on-resistance reduces conduction losses, improving the overall efficiency of the inverter, which is critical for maximizing energy harvest. The fast switching speed enables MPPT (Maximum Power Point Tracking) algorithms to operate at high frequencies, reducing the size of magnetics. The device's low gate charge simplifies the gate drive circuit, reducing component count. For high-power inverters, multiple devices can be paralleled. The PowerFLAT 5x6 package's thermal performance is adequate for typical inverter designs with proper heatsinking. Designers should consider the device's SOA during grid transients and ensure proper protection.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para STL15N60M6 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | STL15N60M2-EP | STL15N60M6-EP | IPD60R280P7 | AOT15N60 |
|---|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | Alpha & Omega Semiconductor |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 15 A | 15 A | 15 A | 15 A | 15 A |
| On-Resistance (RDS(on)) | 0.28 ohm | 0.32 ohm | 0.28 ohm | 0.28 ohm | 0.30 ohm |
| Total Gate Charge (Qg) | 28 nC | 35 nC | 28 nC | 30 nC | 32 nC |
| Output Capacitance (Coss) | 95 pF | 110 pF | 95 pF | 100 pF | 105 pF |
| AEC-Q100 Qualified | No | No | No | No | No |
Diferenciadores clave
- Lower on-resistance compared to M2 series (frente a STL15N60M2-EP)
- Lower gate charge for faster switching (frente a STL15N60M2-EP)
- Lower output capacitance for reduced switching losses (frente a IPD60R280P7)
Notas de diseño
The STL15N60M6 has a junction-to-ambient thermal resistance of 62.5 °C/W. For a power dissipation of 2.4W, the junction temperature rise is 150°C, which is the maximum rating. To ensure reliable operation, provide adequate PCB copper area (at least 1 square inch) connected to the drain pad. For continuous operation at high currents, consider using a heatsink or forced air cooling to keep the junction temperature below 125°C.
Place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a gate resistor (typically 10-22 ohm) to control switching speed and reduce EMI. The source connection should be a low-inductance path to the driver ground. For the drain, use wide copper traces to handle high currents and dissipate heat. Add a ceramic capacitor (100 nF) close to the drain-source to suppress high-frequency ringing.
The STL15N60M6 is not avalanche-rated, so inductive load switching can cause overvoltage stress. Use a snubber circuit (RCD clamp) or a TVS diode across the drain-source to limit voltage spikes. Ensure the gate-source voltage does not exceed ±25V, as this can damage the gate oxide. Also, avoid operating the device beyond its SOA, especially during startup transients.
Información de cumplimiento
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified.