STL13N60M6 - 600V 7A MDmesh M6 Power MOSFET | STMicroelectronics
N.º de pieza: STL13N60M6 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.62 | $1,62 |
| 10 | $1.45 | $14,50 |
| 100 | $1.25 | $125,00 |
| 500 | $1.1 | $550,00 |
| 1.000 | $0.95 | $950,00 |
STL13N60M6 Descripción general
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power management systems, including switch-mode power supplies, DC-DC converters, and motor drives, where they serve as the primary switching elements. The MDmesh M6 series represents STMicroelectronics' advanced vertical structure that reduces on-resistance and gate charge, enabling higher efficiency and lower switching losses.
Key features of the STL13N60M6 include a low gate charge (Qg) of 24 nC (typical), which reduces driver requirements and improves switching speed, and a fast body diode with low reverse recovery charge (Qrr) of 1.2 uC, making it suitable for bridge topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 1.2 J (single pulse), providing robustness against overvoltage transients.
The STL13N60M6 utilizes STMicroelectronics' MDmesh M6 technology, which combines a vertical structure with an optimized charge balance to achieve a figure of merit (RDS(on) x Qg) of 7.92 ohm*nC, significantly lower than previous generations. This results in reduced conduction and switching losses, making it ideal for high-frequency operation. The PowerFLAT 5x6 HV package features an exposed pad for enhanced thermal dissipation, with a thermal resistance junction-to-ambient of 62.5 °C/W and junction-to-case of 1.0 °C/W.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters for industrial and consumer electronics. The device's high voltage rating and low on-resistance make it particularly suitable for 400V bus systems and universal input (85-265V AC) power supplies.
When designing with the STL13N60M6, ensure proper gate drive voltage (10V recommended) to achieve the specified on-resistance. The device is RoHS compliant and halogen-free, meeting current environmental standards. For optimal thermal performance, solder the exposed pad to a large copper area on the PCB.
Alternativas directas para STL13N60M6 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
STL13N60M6-1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STL13N60M6-2
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STL13N60M6 Valores máximos y características eléctricas
| Channel Type | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 7 A |
| On-Resistance (RDS(on)) typ. | 330 mΩ |
| Power Dissipation (PD) | 52 W |
| Gate Charge (Qg) typ. | 24 nC |
| Reverse Recovery Charge (Qrr) | 1.2 µC |
| Avalanche Energy (EAS) | 1.2 J |
| Temperatura de unión de funcionamiento | -55°C to +150°C |
| Encapsulado | PowerFLAT 5x6 HV |
| Tipo de montaje | Surface Mount |
| Thermal Resistance (RthJA) | 62.5 °C/W |
| Thermal Resistance (RthJC) | 1.0 °C/W |
| Estado RoHS | Compliant |
| Sin halógenos | Yes |
Configuración de pines de STL13N60M6
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | D — Drain |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Área de funcionamiento seguro
Aplicaciones típicas
STL13N60M6 es adecuado para 6 aplicacións: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Motor Drives, Auxiliary Power Supplies.
Switch-Mode Power Supplies (SMPS)
The STL13N60M6 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance of 330 mΩ, which minimizes conduction losses. In a typical flyback or forward converter, the MOSFET switches at high frequency, and its low gate charge of 24 nC reduces driver losses. The PowerFLAT 5x6 HV package with exposed pad ensures efficient heat dissipation, allowing reliable operation in compact power supplies. Compared to older MDmesh generations, the M6 technology offers improved figure of merit, enabling higher efficiency and lower thermal stress.
Recomendado
Power Factor Correction (PFC)
In PFC boost converters, the STL13N60M6 operates at high voltage and current, and its low on-resistance and fast body diode with low reverse recovery charge (Qrr) of 1.2 µC reduce switching losses. The device's avalanche ruggedness of 1.2 J ensures robustness against overvoltage transients common in PFC stages. The MDmesh M6 technology provides excellent switching behavior, making it suitable for continuous conduction mode (CCM) PFC circuits. The PowerFLAT 5x6 HV package allows compact PCB layouts, essential for space-constrained power supplies.
Recomendado
LED Lighting Drivers
The STL13N60M6 is well-suited for LED lighting drivers, particularly in offline applications with universal input (85-265V AC). Its 600V rating provides ample margin for line voltage transients, and the low on-resistance minimizes power loss, improving overall driver efficiency. The device's low gate charge enables high-frequency operation, allowing smaller magnetic components. The PowerFLAT 5x6 HV package with exposed pad aids thermal management in enclosed luminaires. The MDmesh M6 technology ensures reliable performance over a wide temperature range.
Recomendado
DC-DC Converters
In DC-DC converters, the STL13N60M6 serves as a high-voltage switching element in topologies like flyback or forward converters. Its 600V breakdown voltage supports input voltages up to 400V, and the low on-resistance of 330 mΩ reduces conduction losses. The fast body diode with low Qrr improves efficiency in bridge topologies. The device's low gate charge of 24 nC simplifies gate drive design and enables high switching frequencies, reducing transformer size. The PowerFLAT 5x6 HV package offers excellent thermal performance for industrial and consumer applications.
Recomendado
Motor Drives
The STL13N60M6 is suitable for small motor drives, such as those in fans, pumps, and power tools. Its 600V rating handles the back-EMF spikes from inductive loads, and the low on-resistance minimizes power dissipation in the motor drive circuit. The device's avalanche ruggedness ensures reliability during motor stall or sudden load changes. The MDmesh M6 technology provides fast switching, reducing electromagnetic interference (EMI). The PowerFLAT 5x6 HV package allows compact designs, essential for portable and space-constrained motor drives.
Recomendado
Auxiliary Power Supplies
The STL13N60M6 is commonly used in auxiliary power supplies for industrial and consumer electronics, providing a reliable high-voltage switch for generating low-voltage rails. Its 600V rating and low on-resistance ensure efficient operation in flyback converters. The device's low gate charge simplifies the drive circuit, and the PowerFLAT 5x6 HV package with exposed pad aids thermal management. The MDmesh M6 technology offers a good balance of performance and cost, making it a popular choice for auxiliary supplies in appliances, meters, and industrial equipment.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para STL13N60M6 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | STL13N60M6-1 | STL13N60M6-2 | IPD60R360P7 | FCD7N60 |
|---|---|---|---|---|---|
| Package | PowerFLAT 5x6 HV | PowerFLAT 5x6 HV | PowerFLAT 5x6 HV | DPAK | DPAK |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current | 7 A | 7 A | 7 A | 7 A | 7 A |
| On-Resistance (typ.) | 330 mΩ | 330 mΩ | 330 mΩ | 360 mΩ | 380 mΩ |
| Gate Charge (typ.) | 24 nC | 24 nC | 24 nC | 25 nC | 26 nC |
| Power Dissipation | 52 W | 52 W | 52 W | 50 W | 48 W |
| Operating Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Diferenciadores clave
- Lower on-resistance than cross-brand alternatives (frente a IPD60R360P7)
- Lower gate charge than cross-brand alternatives (frente a FCD7N60)
- Same-brand variants offer drop-in compatibility (frente a STL13N60M6-1)
Notas de diseño
The STL13N60M6 has a junction-to-case thermal resistance of 1.0 °C/W and a junction-to-ambient of 62.5 °C/W. For reliable operation, ensure the exposed pad is soldered to a large copper area on the PCB. At 52W power dissipation, a heatsink or forced air cooling may be required to keep the junction temperature below 150°C. Use thermal vias to improve heat transfer to the ground plane.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-100 Ω) to control switching speed and reduce EMI. Keep the source connection short and direct to the controller ground to avoid common-source inductance. For high-frequency operation, use a low-ESR ceramic capacitor (e.g., 100 nF) close to the drain and source pins for snubbing.
Do not exceed the maximum gate-source voltage of ±20V. Use a gate clamp or zener diode if necessary. Ensure the drain-source voltage does not exceed 600V, including transients. For inductive loads, provide a freewheeling diode or snubber to prevent avalanche breakdown. Always verify the thermal design at maximum load and ambient temperature.
Información de cumplimiento
RoHS compliant and halogen-free per STMicroelectronics product page. AEC-Q100 qualification not specified.
