STL13N60M6 - 13A, 600V N-Channel Power MOSFET | STMicroelectronics
MPN: STL13N60M6 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.35 | $2.35 |
| 10 | $2.11 | $21.10 |
| 100 | $1.88 | $188.00 |
| 500 | $1.69 | $845.00 |
| 1,000 | $1.52 | $1,520.00 |
Drop-in alternatives for STL13N60M6 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STL13N60M2
β Drop-Inπ Reference alternative (not in catalog)
STL13N60M6-1
β Drop-Inπ Reference alternative (not in catalog)
STL13N60M6 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 13 A |
| Continuous Drain Current (ID) at 100Β°C | 8.2 A |
| Pulsed Drain Current (IDM) | 39 A |
| On-Resistance (RDS(on)) typical | 0.29 ohm |
| On-Resistance (RDS(on)) max | 0.34 ohm |
| Gate-Source Voltage (VGS) | Β±25 V |
| Gate Charge (Qg) typical | 24 nC |
| Reverse Recovery Charge (Qrr) | 1.2 uC |
| Avalanche Energy (EAS) single pulse | 1.2 J |
| Operating Junction Temperature | -55Β°C to +150Β°C |
| Package | PowerFLAT 8x8 HV |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen Free | Yes |
STL13N60M6 Pin Configuration
| Pin 1 | G β Gate |
| Pin 2 | D β Drain |
| Pin 3 | S β Source |
| Pin 4 | D β Drain (exposed pad) |
Safe Operating Area
Typical Applications
STL13N60M6 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Motor Drives, Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STL13N60M6 is ideal for SMPS due to its 600V rating and low on-resistance. In a typical flyback converter, the MOSFET switches at high frequency to regulate output voltage. Its low gate charge (24 nC) reduces driver losses, and the low RDS(on) minimizes conduction losses, improving overall efficiency. The PowerFLAT 8x8 HV package allows compact designs with adequate thermal management. Compared to older MOSFETs, the M6 series offers a better figure of merit, enabling higher switching frequencies and smaller magnetic components.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STL13N60M6 operates in boost topology to shape the input current waveform. Its 600V rating handles the boosted voltage, and the low reverse recovery charge (Qrr) reduces switching losses in continuous conduction mode. The device's avalanche ruggedness (1.2 J) ensures reliability during transient conditions. The low gate charge simplifies the gate drive circuit, and the PowerFLAT package's exposed pad aids heat dissipation. This makes the STL13N60M6 a preferred choice for active PFC in power supplies above 75W.
Recommended
LED Lighting Drivers
The STL13N60M6 is suitable for LED drivers, especially in offline applications. Its high voltage rating allows direct connection to rectified mains, and the low on-resistance reduces power dissipation, improving driver efficiency. The device's fast switching capability enables high-frequency operation, reducing the size of inductors and transformers. The PowerFLAT package's thermal performance ensures reliable operation in enclosed luminaires. With a wide operating temperature range, it can withstand the heat generated in LED fixtures.
Recommended
DC-DC Converters
In DC-DC converters, the STL13N60M6 is used in the switching stage to step down or step up voltage. Its 600V rating is suitable for high-voltage input converters, and the low gate charge enables high switching frequencies, reducing the size of passive components. The low on-resistance minimizes conduction losses, improving efficiency. The device's avalanche capability provides robustness against voltage spikes from inductive loads. The PowerFLAT package allows for a compact converter design with proper thermal management.
Recommended
Motor Drives
The STL13N60M6 can be used in motor drive inverters for industrial and consumer applications. Its 600V rating is suitable for 3-phase AC motor drives, and the low reverse recovery charge reduces switching losses in the bridge configuration. The device's fast switching speed allows for precise motor control with PWM. The avalanche ruggedness ensures reliability during motor start/stop transients. The PowerFLAT package's thermal performance is critical for handling the high currents in motor drives.
Recommended
Solar Inverters
In solar inverters, the STL13N60M6 is used in the DC-AC conversion stage. Its 600V rating is suitable for the high DC bus voltage from solar panels, and the low on-resistance reduces conduction losses, improving inverter efficiency. The device's fast switching capability enables MPPT (Maximum Power Point Tracking) algorithms to operate at high frequencies. The avalanche ruggedness ensures reliability during grid disturbances. The PowerFLAT package's thermal performance is essential for outdoor installations.
Recommended
Recommended Products Summary
Engineering reference data for STL13N60M6 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STL13N60M2 | STL13N60M6-1 | IPD60R360P7 | R6007JNXC7G |
|---|---|---|---|---|---|
| Package | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | DPAK (TO-252) | DPAK (TO-252) |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | ROHM Semiconductor |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 13 A | 13 A | 13 A | 13 A | 7 A |
| On-Resistance (RDS(on)) typical | 0.29 ohm | 0.36 ohm | 0.29 ohm | 0.36 ohm | 0.6 ohm |
| Gate Charge (Qg) typical | 24 nC | 30 nC | 24 nC | 28 nC | 20 nC |
| Reverse Recovery Charge (Qrr) | 1.2 uC | 1.5 uC | 1.2 uC | 1.4 uC | 1.0 uC |
| Avalanche Energy (EAS) | 1.2 J | 1.0 J | 1.2 J | 1.1 J | 0.8 J |
Key Differentiators
- Lower on-resistance compared to M2 series (vs STL13N60M2)
- Lower gate charge for faster switching (vs STL13N60M2)
- Better figure of merit (RDS(on) x Qg) (vs IPD60R360P7)
Design Notes
The STL13N60M6 has a junction-to-case thermal resistance of 1.0 Β°C/W and junction-to-ambient of 62.5 Β°C/W. For continuous operation at 13A, ensure the exposed pad is soldered to a large copper area (at least 1 square inch) to keep the junction temperature below 150Β°C. Use thermal vias to improve heat transfer to the PCB backside.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-20 ohm) to control switching speed and reduce EMI. Keep the source connection short and direct to the controller ground to avoid voltage spikes.
Do not exceed the maximum gate-source voltage of Β±25V. Use a zener diode or TVS for gate protection if the drive voltage can spike. Also, ensure the drain-source voltage does not exceed 600V, especially during transients. The device is avalanche-rated, but repeated events can reduce reliability.
Compliance Information
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified.