EP4SGX110HF35C3G vs EP4SGX110HF35I3G مقایسه
مقایسه دقیق کنار به کنار EP4SGX110HF35C3G توسط Intel و EP4SGX110HF35I3G توسط Intel. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | EP4SGX110HF35C3G | EP4SGX110HF35I3G |
|---|---|---|
| برند | Intel | Intel |
| دسته‌بندی | FPGA & CPLD | FPGA & CPLD |
| وضعیت چرخه عمر | فعال | NRND |
| Series | Stratix IV GX | — |
| Family | Stratix IV | Stratix IV GX |
| Sub-family | GX (transceiver-optimized) | — |
| Logic Elements | 105,600 | 105,600 |
| Embedded Memory Bits | 9,793,536 | 9,793,536 (9.4 Mbit) |
| Embedded Memory (Kbits) | 9,564 Kbit (9793536 bits) | — |
| Number of Logic Array Blocks | [DATA_NEEDED: LAB count] | — |
| Number of Registers | [DATA_NEEDED: register count] | — |
| Maximum User I/O | 488 | — |
| Transceiver Channels | 8 (up to 8.5 Gbps) | — |
| Number of Transceivers | 8 | — |
| Transceiver Data Rate | 3.125 Gbps (low-power mode) - 8.5 Gbps | — |
| 18x18 Multipliers | [DATA_NEEDED: DSP block count] | — |
| PCIe Hard IP | Yes | — |
| بسته‌بندی | 1152-BBGA, FCBGA (HF35, 35x35 mm) | 1152-ball FC-FBGA (HF35), 35 x 35 mm, 1.0 mm pitch |
| Package Code | HF35 (FineLine BGA, 35mm) | — |
| Speed Grade | C3 (commercial) | — |
| دمای کاری | [DATA_NEEDED: junction temperature range] | — |
| Process Technology | 40 nm TSMC | 40 nm low-power CMOS |
| نوع نصب | Surface Mount | Surface Mount (Flip-Chip BGA) |
| وضعیت RoHS | Compliant (lead-free FBGA) | Compliant |
| سطح MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Maximum User I/O Pins | — | 488 |
| Multipliers (18x18) | — | 352 |
| Core Supply Voltage (nominal) | — | 0.9 V |
| Speed/Grade | — | I3 (Industrial, -3 speed) |
| دمای اتصال کاری | — | -40 C to +100 C |
| Multi-Gigabit Transceivers | — | 8 channels (3.125 Gbps to 8.5 Gbps per family datasheet) |
| Hard IP Blocks | — | PCIe Gen1/Gen2, external memory PHY |
| Lead-Free / Halogen-Free | — | Lead-free |
| Configuration Memory | — | SRAM-based (volatile, requires configuration device) |