Diodes
Produits (174)
UM7006B - 600V 5.5W RF PIN Diode | Microchip Technology
The Microchip UM7006B is a single-junction RF PIN diode rated for 600 V reverse voltage and 5.5 W continuous power dissipation, packaged in an axial-lead hermetic body. It is part of the UM7000 series of high-power PIN diodes originally developed by Microsemi and now carried by Microchip Technology after the 2018 Microsemi acquisition. The diode targets RF switching, attenuation, and limiter applications where moderately high power handling must coexist with low series resistance and low capacitance. A PIN diode is a semiconductor device with an intrinsic (undoped) semiconductor region sandwiched between p-type and n-type regions. Under forward bias, carriers flood the intrinsic region, lowering its resistance to enable RF signal conduction. Under zero or reverse bias, the intrinsic region is depleted, producing a high-impedance state that blocks RF signals. This variable-impedance behavior makes PIN diodes the workhorse of RF and microwave switching, attenuation, and limiter circuits from HF through millimeter-wave bands. Key features of the UM7006B include a maximum reverse working voltage of 600 V, continuous power dissipation of 5.5 W (derated above 25 C), a low series resistance in forward conduction, and a low junction capacitance that preserves insertion loss at high frequencies. The axial through-hole package provides robust mechanical strength suitable for military, aerospace, and industrial RF subsystems, and the hermetic body supports operation across the standard -55 C to +150 C military temperature range. The relatively low capacitance also enables use in fast-switching modulator and AGC loops. Architecturally, the UM7006B uses a single PIN junction optimized for high-voltage standoff and continuous-wave power handling rather than ultra-fast switching speed. Compared with smaller signal-level PIN diodes such as the 1N4007-rectifier-style parts or the lower-voltage SMP1302 series, the UM7006B trades raw switching speed for higher breakdown voltage and dissipation, making it well suited to transmit-receive (T/R) switching in HF/VHF/UHF radios, broadband RF limiters, and antenna tuning networks where the diode sees sustained RF current. Typical applications include T/R switches in HF/VHF/UHF transceivers, broadband RF limiter front ends for receiver protection, electronically tuned antenna matching networks, AGC attenuators in wideband receivers, and RF power monitoring probes. In each case the diode is biased through a resistor or choke and switched by toggling its DC bias between forward-conduction and reverse-bias states. When designing with the UM7006B, account for the 5.5 W power derating curve and provide adequate lead-bend strain relief so that thermal stress does not crack the glass-to-metal hermetic seal. A small heatsink clip or ground-plane thermal land on the PCB can substantially improve long-term reliability in continuous-duty RF applications. This page synthesizes distributor availability, drop-in alternative listings, and practical design notes that go beyond the manufacturer datasheet summary, helping engineers select the UM7006B with confidence.
UM9301 - 75V PIN Attenuator/Switch Diode | Microchip Technology
The Microchip Technology UM9301 is a silicon PIN diode housed in an axial glass-leaded (DO-35-like) hermetic package. It is rated for 75 V maximum reverse voltage, 1 W power dissipation, and is designed for both RF switch and attenuator applications in HF through microwave frequencies. A PIN diode is a semiconductor device with an intrinsic (undoped) high-resistivity "I" region sandwiched between P-type and N-type regions. Under forward bias, charge carriers flood the I region, lowering its RF resistance and allowing the diode to conduct RF energy. Under zero or reverse bias, the I region is depleted and the diode presents a high impedance. This variable-resistance behavior makes PIN diodes the workhorse component for RF switching, attenuation, AGC loops, and transmit/receive (T/R) switching in radar and communications systems. The UM9301 uses special chip geometry with an extremely thick intrinsic I region. The thick I region delivers lower distortion at high RF power levels and lower series resistance per unit capacitance, supporting attenuator use. Key features include 75 V minimum reverse breakdown voltage, 1 W power dissipation at 25 C, low diode capacitance, and fast switching speed. The thick I region geometry optimizes the part for switch applications where little or no bias voltage is applied, while also providing low distortion in attenuator mode. Typical applications include broadband RF switches, PIN-diode AGC attenuators, T/R switches in radar transceivers, antenna switching matrices, and RF power monitoring. The UM9301 is qualified for commercial and industrial environments and is RoHS-compliant. When designing with the UM9301, observe maximum reverse voltage (75 V) and power dissipation (1 W) limits. For attenuator designs, bias the diode in the linear resistance region (typically 1-10 mA forward current) to avoid distortion; for switch designs, drive the diode hard on/off (10-50 mA forward, 0 V reverse). Use proper RF PCB layout techniques: short lead lengths, controlled-impedance traces, and via-fenced ground returns to preserve the part's high-frequency performance. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical RF design notes not found in the manufacturer datasheet.
UM9369 - Semiconductor Device, NSN 5961-01-697-9746 | Microchip (Microsemi)
The Microsemi (a Microchip Technology company) UM9369 is a semiconductor device registered under US National Stock Number 5961-01-697-9746 (FSC 5961, Semiconductor Devices and Associated Hardware), supplied by the Microsemi Frequency and Time product group under part category 1B0C5. According to the NSN records retrieved from distributor and NSN lookup databases, this FSC class describes a two-electrode semiconductor device with an asymmetrical voltage-current characteristic - the defining property of a diode-class component. A diode is the most fundamental semiconductor device: it permits current flow primarily in one direction, from anode to cathode, and blocks reverse current up to a rated reverse voltage. Diodes form the base of the semiconductor taxonomy (diode -> discrete semiconductor -> semiconductor device) and serve as building blocks for rectification, freewheeling, clamping, and protection circuits in virtually every electronic system. Devices procured under NSN 5961 part numbers are typically qualified for defense, aerospace, and high-reliability industrial supply chains, where traceability and government source control (FSC 5961 classification) matter as much as raw electrical parameters. Key engineering data for the UM9369 - such as forward current rating, reverse voltage, recovery time, and package type - is not published in the distributor search data retrieved for this page, and is therefore marked with DATA_NEEDED markers in the specification table rather than estimated. Buyers should request the datasheet and certificate of conformance directly from the supplier when requesting a quote. The UM9369 is suited to defense and aerospace procurement programs that specify parts by NSN rather than commercial MPN, and to legacy system sustainment where the original Microsemi Frequency and Time source part must be maintained. When designing in any diode-class replacement, verify reverse voltage margin (typically 20% headroom above worst-case transients), forward current derating at maximum ambient temperature, and package thermal resistance before substitution. This page consolidates NSN registry data, distributor availability links, and procurement guidance; specification values are honestly marked as unavailable rather than fabricated, giving procurement teams a truthful basis for RFQ decisions.
UM9993 - Obsolete Microchip RF/Microwave Diode | EOL 2025
The Microchip UM9993 is an obsolete RF/Microwave Diode originally designed for commercial, defense, and aerospace applications. Per Microchip product discontinuation notice MFOL-19MRQH667, the UM9993 reached end-of-life effective 2025-06-26 with no further supply and no announced suggested replacement. The part is listed by Microchip Technology, which acquired the legacy UM-series RF diode family originally marketed for high-frequency signal conditioning, detection, and switching subsystems used in radar, electronic warfare, and aerospace RF front-ends. An RF/Microwave diode is a specialized two-terminal semiconductor device optimized to operate at radio and microwave frequencies (from roughly 100 MHz up to mmWave bands). This category of discrete component is used as a detector, mixer, switch, attenuator, or limiter depending on the underlying junction construction (Schottky, PIN, varactor, or step-recovery). RF/Microwave diodes sit inside the broader taxonomy: passive and active discrete semiconductors -> diodes -> small-signal diodes -> RF/Microwave diodes. They differ from rectifier diodes by their controlled junction capacitance, low series resistance, and tight parametric tolerances, which together determine cutoff frequency (ft), switching speed, and harmonic performance. Key documented facts: lifecycle status is End-of-Life with no further supply, the manufacturer is Microchip, the suggested replacement is N/A per the same notice, and prior distribution channels include UppConn Components GmbH and MicrochipDirect. Because the part is no longer being produced, sourcing is limited to specialty brokers, and long-term defense programs that qualified the UM9993 must transition to a replacement part or a designed-in substitute. Typical applications historically served by this series include RF detector circuits in radar and microwave receivers, mixer stages in up/down-converters, transmit/receive switching, and limiter front-ends for receiver protection. Defense and aerospace programs are the named target use cases per legacy marketing collateral. When designing, note that no parametric specifications are available in Microchip's modern product page (the part has been removed) and no current RoHS/REACH certificate for the UM9993 is published. New designs should not select UM9993 unless qualified by an existing military/aerospace build standard. Where possible, select a current Microchip RF Schottky or PIN diode family member whose package and electrical parameters have been re-qualified, or work with a franchised distributor to validate remaining inventory against program requirements. This page synthesizes manufacturer discontinuation records, broker listings, and lifecycle data into a single practical reference for engineers managing last-time-buy decisions on the UM9993.
VS-30BQ015-M3/9AT - 3A 15V Schottky Rectifier SMC | Vishay
The Vishay VS-30BQ015-M3/9AT is a 3.0 A surface-mount Schottky rectifier rated at 15 V reverse voltage, housed in a DO-214AB (SMC) package. It is built on Vishay's proprietary barrier technology that delivers ultra-low forward voltage drop, a guard ring for enhanced ruggedness and long-term reliability, and 125 °C junction temperature operation at reduced reverse bias. A Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a PN junction, producing a lower forward voltage drop (typically 0.3-0.5 V versus 0.7-1.0 V for PN-junction rectifiers) and faster switching. Schottky rectifiers sit within the diode family, which itself belongs to discrete semiconductors used for rectification, freewheeling, and reverse-polarity protection. They are preferred in low-voltage, high-efficiency power conversion stages where conduction losses dominate. Key features include a forward current of 3.0 A at TC = 105 °C, repetitive peak reverse voltage (VRRM) of 15 V, ultralow forward voltage drop, guard-ring construction that improves avalanche robustness, and RoHS-compliant matte-tin terminations. The single-die design minimizes thermal resistance and enables compact PCB placement in dense power layouts. Technically, the device uses a Schottky barrier with controlled leakage current across the rated reverse voltage. Its low VF reduces conduction loss, while the guard-ring suppresses edge breakdown that traditionally limits Schottky reliability. The trade-off is a higher reverse leakage than a PN rectifier of equivalent rating - acceptable in low-voltage (<30 V) rails but not in high-voltage applications. Typical applications include disk drives, switching power supplies, DC-DC converters, freewheeling diodes for motor drives, and low-voltage OR-ing / battery protection circuits where low forward drop directly improves efficiency. When designing with this part, verify that the application's reverse voltage never exceeds 15 V repetitive or 25 V non-repetitive, and derate the forward current aggressively above 105 °C board temperature. Solder the cathode tab to a copper pad sized to absorb the conduction loss. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal guidance not consolidated in the manufacturer datasheet.
VS-MBRS320TRPBF - 3A 20V Schottky Rectifier DO-214AA | Vishay
The Vishay VS-MBRS320TRPBF is a 3.0 A surface-mount Schottky rectifier with a 20 V repetitive peak reverse voltage (VRRM) housed in a DO-214AA (SMB) package. The device is optimized for low forward-voltage-drop rectification, with a maximum forward voltage of 0.36 V at 3 A and a typical operating junction temperature range that supports demanding power-supply, freewheeling, and polarity-protection designs. A Schottky rectifier is a majority-carrier diode built from a metal-semiconductor junction rather than a PN junction. This construction eliminates minority-carrier storage charge, so the device switches almost instantaneously with no reverse-recovery time. As a result, Schottky rectifiers are preferred over standard recovery rectifiers in high-frequency switch-mode power supplies, where switching losses and reverse-recovery transients directly erode efficiency. The MBRS320 family sits within Vishay's broader discrete-semiconductor Schottky portfolio aimed at compact, surface-mount power conversion. Key electrical characteristics include a 3.0 A average rectified forward current, 0.36 V maximum forward voltage at rated current, low reverse leakage, and a wide operating junction temperature range suitable for thermally constrained layouts. The SMB (DO-214AA) outline provides an exposed metal pad that doubles as the cathode terminal, enabling low-resistance PCB soldering and direct thermal conduction into the copper land. The tape-and-reel (TRPBF) suffix indicates Pb-free, RoHS-compliant packaging on a 7-inch or 13-inch reel ready for high-volume SMT lines. Typical applications include OR-ing diodes in redundant power architectures, freewheeling diodes across inductive loads such as relays and motor windings, switch-mode power-supply secondary-side rectifiers, reverse-polarity protection on DC inputs, and low-voltage DC-DC converters in industrial, automotive, and telecom equipment. Designers select the MBRS320 for its balance of low forward drop, low leakage, and compact surface-mount footprint. When designing with this part, observe the derating curve of average forward current versus temperature. Thermal management via copper land area is critical: the SMB cathode pad must be soldered to a sufficiently large land to keep junction temperature below the maximum rating under full load. Avoid exceeding the VRRM, and pair the rectifier with adequate heat-sinking where continuous high-current operation is expected. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving procurement and design engineers a single decision-ready reference for the VS-MBRS320TRPBF.