Semi-conducteurs discrets
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Produits (1814)
IRFP250N - 200V 30A N-Channel HEXFET MOSFET | Infineon (Lead-Free (Pb-Free))
The Infineon IRFP250N is a fifth-generation N-Channel HEXFET power MOSFET rated at 200 V VDS, 30 A continuous drain current (at TC), and 214 W power dissipation (at TC), housed in a through-hole TO-247AC package. It leverages advanced process technology to achieve extremely low on-resistance per silicon area, paired with the fast switching speed and ruggedized device design HEXFET MOSFETs are renowned for. The PBF suffix confirms lead-free (Pb-free) construction compliant with RoHS directives. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between drain and source. Within the broader hierarchy, the IRFP250N sits as: power MOSFET -> discrete semiconductor -> N-channel enhancement-mode device -> HEXFET family (Infineon/IR proprietary planar cell technology). The planar cell structure gives a wide safe operating area (SOA), which is essential for inductive switching loads such as motors and transformers. Key features include dynamic dv/dt rating, ease of paralleling, fully avalanche-rated performance, simple drive requirements, and fast switching. The TO-247AC through-hole package provides low thermal resistance and is a long-standing industry-standard footprint, which simplifies PCB layout, mounting hardware selection, and heatsink attachment. The part is silicon-optimized for applications switching below 100 kHz and is qualified per JEDEC standards. The fifth-generation HEXFET process reduces conduction losses (low RDS(on)) while preserving the ruggedness that designers expect from earlier generations. Avalanche energy rating ensures the device can absorb unclamped inductive switching transients without destructive failure, an important attribute in motor drive and solenoid circuits where back-EMF is unavoidable. Typical applications include high-power DC-DC converters, uninterruptible power supplies (UPS), solar inverters, motor drive circuits (H-bridge and three-phase), welding equipment, induction heating, and switched-mode power supplies (SMPS) at the 1-5 kW power level. The 200 V rating also makes it suitable for 120 V rectified bus and PFC boost stages. When designing with this part, carefully calculate worst-case power dissipation (P = I^2 x RDS(on)) and verify that the chosen heatsink keeps Tj below 175 C. The gate drive voltage should swing between 10 V and 12 V for full enhancement and minimum RDS(on); under-driven gates dramatically increase conduction loss. This page synthesizes distributor pricing, drop-in alternatives in the TO-247AC footprint, and practical design notes not found in the manufacturer datasheet alone.
IRFP250NPBF - 200V 30A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFP250NPBF is a fifth-generation N-Channel HEXFET power MOSFET rated at 200 V VDS, 30 A continuous drain current (at TC), and 214 W power dissipation (at TC), housed in a through-hole TO-247AC package. It leverages advanced process technology to achieve extremely low on-resistance per silicon area, paired with the fast switching speed and ruggedized device design HEXFET MOSFETs are renowned for. The PBF suffix confirms lead-free (Pb-free) construction compliant with RoHS directives. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between drain and source. Within the broader hierarchy, the IRFP250NPBF sits as: power MOSFET -> discrete semiconductor -> N-channel enhancement-mode device -> HEXFET family (Infineon/IR proprietary planar cell technology). The planar cell structure gives a wide safe operating area (SOA), which is essential for inductive switching loads such as motors and transformers. Key features include dynamic dv/dt rating, ease of paralleling, fully avalanche-rated performance, simple drive requirements, and fast switching. The TO-247AC through-hole package provides low thermal resistance and is a long-standing industry-standard footprint, which simplifies PCB layout, mounting hardware selection, and heatsink attachment. The part is silicon-optimized for applications switching below 100 kHz and is qualified per JEDEC standards. The fifth-generation HEXFET process reduces conduction losses (low RDS(on)) while preserving the ruggedness that designers expect from earlier generations. Avalanche energy rating ensures the device can absorb unclamped inductive switching transients without destructive failure, an important attribute in motor drive and solenoid circuits where back-EMF is unavoidable. Typical applications include high-power DC-DC converters, uninterruptible power supplies (UPS), solar inverters, motor drive circuits (H-bridge and three-phase), welding equipment, induction heating, and switched-mode power supplies (SMPS) at the 1-5 kW power level. The 200 V rating also makes it suitable for 120 V rectified bus and PFC boost stages. When designing with this part, carefully calculate worst-case power dissipation (P = I^2 x RDS(on)) and verify that the chosen heatsink keeps Tj below 175 C. The gate drive voltage should swing between 10 V and 12 V for full enhancement and minimum RDS(on); under-driven gates dramatically increase conduction loss. This page synthesizes distributor pricing, drop-in alternatives in the TO-247AC footprint, and practical design notes not found in the manufacturer datasheet alone.
IRFP260MPBF - 200V 50A N-Channel MOSFET | Infineon TO-247AC
The Infineon IRFP260MPBF is a 200V N-channel power MOSFET rated at 50A continuous drain current (Tc) and 300W power dissipation (Tc), housed in a TO-247AC through-hole package. It belongs to Infineon's HEXFET Power MOSFET family and uses IR MOSFET advanced process technology to achieve very low on-resistance per silicon area combined with fast switching speed and rugged avalanche-rated device design. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for high-current, high-voltage power conversion. N-channel MOSFETs such as the IRFP260MPBF conduct when the gate is pulled high relative to the source, and they form the active element in synchronous rectifiers, half-bridge and full-bridge converters, and motor drive stages. The TO-247AC package is a three-lead through-hole outline with an exposed metal tab that doubles as the drain terminal and as a mounting surface for heatsinking. Key specifications for the IRFP260MPBF include a maximum drain-source voltage (VDS) of 200V, continuous drain current of 50A at 25C case temperature, pulsed drain current capability that supports short-duration overloads, a typical on-resistance (RDS(on)) of 40 mOhm, and an input capacitance (Ciss) of approximately 1560 pF. The device is avalanche-rated, meaning it can dissipate the energy of an unclamped inductive load transient without destruction. Architecturally, the IRFP260MPBF uses a planar cell layout optimized for low conduction loss. The 200V breakdown rating, combined with the low RDS(on), places this part in the sweet spot for offline switch-mode power supplies below 1 kW, high-current DC motor drives, and welding inverter front ends. The rugged avalanche energy rating reflects Infineon's qualification methodology for industrial stress conditions. Typical applications include switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), DC motor control, welding inverters, and DC choppers. The TO-247AC package allows single-screw isolated mounting for clean heatsink assembly. When designing with the IRFP260MPBF, ensure the gate driver can source and sink the gate charge required to switch the device within the desired transition time. A gate-source pull-down resistor of 10 kOhm is recommended to prevent accidental turn-on from Miller current during the drain transition. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical design notes that complement the manufacturer datasheet for fast engineering evaluation.
IRFP2907PBF - 75V 209A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFP2907PBF is a 75 V, 209 A N-channel HEXFET power MOSFET in a TO-247AC through-hole package, designed for extremely low on-resistance per silicon area via Stripe Planar process technology. It delivers an industry-leading 4.5 mOhm R_DS(on) at 10 V V_GS and handles 470 W of power dissipation at 25 C case temperature, making it a benchmark part for high-current switching. What is a HEXFET power MOSFET? An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate-to-source voltage exceeds its threshold. HEXFET is a stripe-planar DMOS cell architecture pioneered by International Rectifier (now part of Infineon) that interleaves thousands of vertical cells on a single die to minimize R_DS(on) per unit area. Power MOSFETs sit one tier below IGBTs in the power-semiconductor hierarchy and dominate sub-200 V, high-current applications such as motor drives, synchronous rectification, and battery protection. Key features of the IRFP2907PBF include 75 V drain-to-source breakdown voltage (V_DSS), continuous drain current of 209 A at T_C = 25 C, ultra-low 4.5 mOhm static R_DS(on) at V_GS = 10 V, 175 C maximum junction operating temperature, fast switching speed, and an improved repetitive avalanche rating. The part is fully RoHS compliant (Pb-free) and supplied in a TO-247AC body that accepts standard TO-247 mounting hardware and heatsinks. The HEXFET stripe-planar architecture combines a low gate charge of approximately 410 nC with the 4.5 mOhm R_DS(on), giving excellent figure-of-merit for hard-switched applications. Its avalanche-energy rating and 175 C junction capability make it tolerant of load-dump transients, while the body diode supports bridge and half-bridge topologies without an external anti-parallel diode. Typical applications include 12 V/24 V automotive battery protection, brushed and BLDC motor drives for industrial tools, high-current synchronous rectification in telecom and server DC-DC converters, and high-wattage class-D audio amplifiers. Its 209 A rating also suits solar charge controllers and welding inverter front ends. When designing with this device, place a low-ESR gate-drive resistor (typically 10-47 ohm) close to the gate pin to suppress ringing, and ensure the heatsink is sized for worst-case continuous dissipation, since the TO-247AC thermal resistance drops junction temperature rise only when the case-to-sink interface is well thermal-bonded. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that extend beyond what is published in the manufacturer datasheet.
IRFP3710PBF - 100V, 57A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFP3710PBF is a fifth-generation HEXFET N-channel power MOSFET rated at 100 V VDS, 57 A continuous drain current (Tc), and 200 W power dissipation in a TO-247AC through-hole package. It features an industry-leading 25 mOhm maximum on-resistance and 66.7 nC typical gate charge, optimized for high-current switching applications. The device operates over a -55C to +175C junction temperature range and is fully avalanche rated. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source terminals. Within the broader taxonomy, the IRFP3710PBF belongs to N-channel enhancement-mode MOSFETs, falling under power management semiconductors and discrete transistors. HEXFET is Infineon's (formerly International Rectifier's) proprietary power MOSFET technology, characterized by a hexagonal cell layout that maximizes silicon area utilization, lowering RDS(on) per unit die area. Fifth-generation HEXFETs advanced this by reducing both on-resistance and gate charge simultaneously - a traditional trade-off in MOSFET design. Key differentiating specifications include 25 mOhm max RDS(on) at VGS = 10 V, fast switching speed, dynamic dv/dt rating, and lead-free TO-247AC construction. The 200 W power dissipation capability at Tc = 25C makes this device particularly suited for high-power converters where thermal performance is critical. The fully avalanche-rated design ensures robustness under inductive switching transients, while the isolated mounting hole of the TO-247AC package simplifies heatsink assembly compared to the older TO-218. Technical depth: the IRFP3710PBF uses advanced process technology to achieve extremely low on-resistance per silicon area. Its low RDS(on) of 25 mOhm at 57 A conduction yields conduction losses of approximately 81 W at full rated current - requiring substantial thermal management. Gate charge of 66.7 nC typical indicates moderate gate drive requirements, suitable for standard MOSFET drivers without specialized gate current capability. Typical applications include high-current DC motor drives, synchronous rectifier stages in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, and welding equipment. The 100 V rating provides adequate headroom for 48 V telecom buses and industrial 72 V systems. In automotive applications, it is commonly deployed in 12 V/24 V battery switching, electronic load dump protection, and high-current solenoid drivers. When designing with the IRFP3710PBF, ensure adequate heatsinking to maintain junction temperature below 150C at full load. Use a gate drive voltage of 10 V for guaranteed full enhancement, and incorporate a gate resistor of 10-100 ohm to control switching transients and EMI. The TO-247AC isolated tab allows direct mounting to a heatsink without insulating washers when properly grounded. This page synthesizes distributor pricing from DigiKey/Mouser/LCSC, cross-referenced drop-in alternatives sourced from web data, and practical design notes not consolidated in the manufacturer datasheet.
IRFP4768PBF - 250V 93A N-Channel MOSFET TO-247AC | Infineon
The Infineon Technologies IRFP4768PBF is an N-channel HEXFET power MOSFET rated for 250V drain-to-source breakdown voltage, 93A continuous drain current at Tc=25C, and 520W power dissipation in a TO-247AC through-hole package. Its maximum on-state resistance of 17.5 mOhm makes it a strong choice for low-loss power switching. A power MOSFET is a field-effect transistor designed to switch significant power levels by controlling drain-to-source current through a gate-generated electric field. Within the power-electronics hierarchy, it serves as the fundamental switching element of DC-DC converters, motor drives, inverters, and switched-mode power supplies (SMPS), where it is preferred over bipolar transistors for its fast switching, low gate-drive power, and high efficiency. Key features include the low RDS(on) of 17.5 mOhm, which minimizes conduction losses, and a total gate charge of 180 nC that supports efficient high-frequency switching. The device tolerates a gate-to-source voltage of plus/minus 20V, offers improved gate, avalanche, and dynamic dV/dt ruggedness, and is fully characterized for capacitance and avalanche SOA. The enhanced body diode dV/dt and di/dt capability reduce losses in bridge topologies. Technically, the part belongs to the IR MOSFET HEXFET family using planar stripe geometry manufactured on Infineon's advanced power MOSFET process. The junction-to-case thermal resistance of 0.24 C/W enables the 520W rating with proper heatsinking, and the TO-24AC package allows direct mounting to a heat sink for high-power designs. Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), high-speed power switching, hard-switched and high-frequency circuits, DC-DC converters, motor control, power factor correction (PFC), and welding equipment. The 250V rating suits off-line and 48V-bus-derived systems with margin. Design tip: drive the gate with 10-12V to fully enhance the channel and minimize RDS(on), use a gate resistor to control switching speed and EMI, and provide adequate heatsinking since the PbF package is RoHS-compliant and lead-free.
IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFR024NTRPBF is an N-channel HEXFET power MOSFET rated at 55 V VDS, 17 A continuous ID, and 75 mOhm maximum on-resistance, housed in a TO-252-3 (DPAK / SC-63) surface-mount package. It uses Infineon's fifth-generation HEXFET process to achieve extremely low RDS(on) per silicon area and is supplied on tape and reel (TR suffix) with lead-free (PbF) terminations. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. The IRFR024NTRPBF belongs to the broader N-channel enhancement-mode MOSFET family, which sits within the discrete semiconductor power-switch hierarchy (MOSFET -> transistor -> discrete semiconductor). It is specifically engineered for low- to medium-frequency switching, where its low gate charge (Qg = 13.3 nC typical) and 55 V drain-source rating suit DC-DC conversion, motor drive, and relay-replacement functions in non-automotive industrial and consumer systems. Key specifications include a maximum drain-source voltage (VDS) of 55 V, continuous drain current (ID) of 17 A at TC = 25 C, pulsed drain current of 60 A, maximum on-resistance of 75 mOhm at VGS = 10 V, gate threshold voltage (VGS(th)) of 2.0 V to 4.0 V, and a maximum junction temperature of 175 C. The DPAK surface-mount package has a junction-to-ambient thermal resistance (theta_JA) of approximately 50 C/W on a standard JEDEC 1-square-inch pad, with a junction-to-case rating (theta_JC) of 3.3 C/W enabling direct PCB heat-sinking via the drain tab. Typical applications include DC-DC buck/boost converters, low-voltage motor drivers, solenoid and relay drivers, LED backlight switching, battery protection circuits in 12 V lead-acid systems, and general-purpose power switches in industrial and consumer equipment. The 55 V rating provides sufficient margin above the 24 V industrial bus and 12 V automotive transient environment for many systems, though for harsh load-dump environments a 60 V or 100 V part is preferred. When designing with this part, calculate worst-case power dissipation as PD = ID^2 x RDS(on) x (1 + TJ derating factor) and verify that the resulting junction temperature stays below the 175 C maximum. The exposed drain tab doubles as both pin 2 (electrical) and a thermal pad; a sufficiently large copper pour (>= 1 sq inch) is critical to achieving the rated continuous current without thermal limiting. This page synthesizes distributor pricing, parametric cross-reference data, and practical PCB-layout guidance beyond what appears in the manufacturer datasheet, helping procurement engineers and design engineers evaluate the IRFR024NTRPBF alongside true drop-in alternatives in the DPAK footprint.
IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon
The Infineon IRFR1018ETRPBF is an N-channel HEXFET power MOSFET rated at 60 V drain-to-source breakdown voltage, 79 A continuous drain current, and 8.4 mΩ maximum on-state resistance, packaged in a surface-mount TO-252AA (D-Pak) with tape-and-reel packaging. The device is part of Infineon's strongIRFET family, designed for high-efficiency synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor control applications. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals. N-channel MOSFETs conduct when a positive gate-to-source voltage is applied, offering lower on-resistance per unit silicon area than equivalent P-channel devices. Power MOSFETs belong to the discrete semiconductor hierarchy and sit between signal-level transistors and higher-power IGBT modules in the power electronics stack. Key features of the IRFR1018ETRPBF include a low typical Rds(on) of 8.4 mΩ at Vgs=10 V, a total gate charge (Qg) of 46 nC enabling fast switching transitions, and 110 W maximum power dissipation at 25 °C case temperature. The device also offers avalanche-rated ruggedness, a logic-level-compatible gate threshold range, and a low thermal-resistance DPAK package that supports high-current operation on FR-4 PCB with adequate copper pour. Internally the IRFR1018E uses Infineon's HEXFET planar-cell technology, which optimises the trade-off between conduction loss, switching loss, and avalanche energy. The 60 V breakdown rating makes it well suited to 24 V bus telecom and industrial systems as well as 12 V automotive subsystems. The optimized body diode supports synchronous-rectifier topologies where the low-side MOSFET must conduct reverse current during freewheeling intervals. Typical applications include secondary-side synchronous rectification in isolated DC-DC converters, low-voltage motor-drive H-bridges, solenoid and relay drivers, hot-swap controllers, battery protection circuits in power tools, and OR-ing FETs in redundant power systems. The 8.4 mΩ Rds(on) keeps conduction losses low even at 30-40 A continuous loads. When designing with this part, ensure the gate-drive voltage comfortably exceeds the maximum threshold voltage (typically 4 V) across all temperature corners - a 10 V gate drive is recommended for full enhancement. Adequate PCB copper area is essential for heat extraction; without it the device will thermally limit well below its 79 A rating. This page synthesises distributor pricing, drop-in DPAK alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single-source reference for sourcing and second-sourcing decisions.
IRFR1205TRPBF - 55V N-Channel HEXFET MOSFET, 44A | Infineon
The Infineon IRFR1205TRPBF is a fifth-generation HEXFET N-channel power MOSFET rated at 55 V VDS(max), 44 A ID, and 107 W PD, housed in a TO-252AA (DPAK) surface-mount package. Built on Infineon's IR MOSFET technology, it delivers an ultra-low on-resistance of 27 mOhm at VGS=10V and a total gate charge of 43.3 nC for fast switching performance in SMPS, motor drive, and synchronous rectification circuits. A power MOSFET is a voltage-controlled switch that uses an insulated gate electrode to modulate conduction between source and drain terminals. HEXFET (HEXagonal FET) is Infineon's planar-cell power-MOSFET technology that places hexagonal-shaped transistor cells across the silicon die to maximize channel width per unit area, lowering RDS(on) and improving switching efficiency. This device sits within the broader hierarchy of power MOSFETs -> power transistors -> discrete semiconductors -> active electronic components. Key features include 27 mOhm maximum RDS(on) at VGS=10V, fast switching with low Qg/Qgd, avalanche-rated single-pulse capability, an integrated body diode for synchronous rectification, and an operating junction temperature range from -55C to +175C. The DPAK (TO-252AA) package provides a low thermal resistance of about 50 C/W junction-to-ambient when soldered to 1 oz copper, supporting sustained high-current operation without external heatsinking in moderate-duty applications. Architecturally, the IRFR1205 uses an N-channel enhancement-mode structure: applying a positive gate-source voltage (VGS) above the threshold (~2V typical, 4V max) inverts the P-body surface into an N-channel, allowing current flow from drain to source. The fifth-generation HEXFET cell geometry shortens the channel length and improves die packing density, which is why RDS(on) per mm^2 is markedly lower than earlier generations. Typical applications include DC-DC converters (buck, boost, synchronous rectification), low-voltage motor drivers for pumps and fans, solenoid and relay drivers, battery protection circuits in 12V/24V systems, and LED backlight driving. The 55 V rating provides comfortable margin above 24 V industrial rails and 36 V telecom buses. Design consideration: minimize parasitic source inductance by using short, wide PCB traces and Kelvin-source layout where possible; gate-drive impedance should be kept below ~10 Ohm for clean edges. The tab is electrically tied to the drain, so PCB thermal copper must be designed with adequate clearance if the tab voltage is non-ground referenced. This page synthesizes distributor pricing, drop-in cross-brand alternatives in the same DPAK footprint, and practical design notes not always collected in the manufacturer datasheet, delivering a single decision-ready reference for engineers.
IRFR120NTRLPBF - 100V 9.4A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFR120NTRLPBF is a 100 V, 9.4 A single N-channel HEXFET power MOSFET housed in a surface-mount PG-TO252-3 (DPAK) package. Built on Infineon's advanced IR MOSFET process, it delivers a maximum on-resistance of 210 mΩ at VGS=10 V and a continuous drain current of 9.4 A at TC=25°C with 48 W power dissipation, making it well suited to mainstream switching applications at or below 100 V. A power MOSFET is a voltage-controlled three-terminal semiconductor switch used to efficiently route or modulate current between its drain and source terminals under the control of a gate-source voltage. Power MOSFETs sit inside the wider category of discrete semiconductors and, in switching topologies, replace mechanical relays and bipolar transistors to deliver higher switching frequency, lower drive power and zero quiescent conduction loss. The IRFR120N family is part of Infineon's classic HEXFET planar-cell line, which became an industry reference for 100 V N-channel switching FETs. Key differentiating features of the IRFR120NTRLPBF include fully avalanche-rated dynamic behavior, fast switching transitions enabled by low total gate charge of 16.7 nC, a low 210 mΩ on-resistance at full gate drive, and a ruggedized intrinsic body diode that withstands unclamped inductive switching events. The device is rated for operation from -55°C to +175°C junction temperature and is supplied in an RoHS-compliant lead-free PG-TO252-3 package on tape-and-reel. Architecturally, the IRFR120N uses a vertical DMOS cell with a hex-fabricated gate geometry. This structure provides a low figure-of-merit for switching losses (RDS(on) × Qg) and gives the part its 100% avalanche-tested reliability. The PG-TO252-3 footprint is the de-facto industry standard for medium-power SMD MOSFETs, and the thermal pad on pin 2 carries the main drain current path to the PCB copper pour. Typical applications for the IRFR120NTRLPBF include low-side switching in DC-DC converters, 24 V industrial relay and solenoid drivers, half-bridge stages in motor drivers, synchronous rectifier positions in non-isolated buck converters, and general-purpose load switching in 12 V/24 V automotive and industrial subsystems. When designing with this part, pay attention to gate-drive voltage - the full 210 mΩ is only achieved with VGS=10 V; at logic-level drive (VGS=4.5 V) RDS(on) typically rises by 50% or more. Also keep in mind the device's continuous-current rating is referenced to TC=25°C; in a real PCB environment at TA=70°C the usable continuous drain current drops to roughly 4 A without a substantial copper thermal pour. This page synthesizes distributor pricing for the Infineon IRFR120NTRLPBF, drop-in alternatives sourced from the manufacturer's same-part family and from cross-brand parametric cross-reference data, and practical design notes that are not present in the manufacturer datasheet alone.
IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon
The Infineon IRFR120NTRPBF is a fifth-generation HEXFET N-channel power MOSFET rated at 100 V VDS, 9.4 A continuous drain current (TC), and 48 W power dissipation (TC), housed in a surface-mount TO-252AA (DPAK) package. It uses advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speed and a ruggedized device design. According to the manufacturer datasheet, the maximum static drain-to-source on-resistance is 210 milliohms and the typical total gate charge is 16.7 nC, making the device efficient for a wide variety of DC-DC and load-switching applications. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert or route electrical energy. The N-channel enhancement-mode MOSFET is the most common topology for low-side switching, high-side synchronous rectification, and DC-DC converter power stages. Within the power-management hierarchy, the DPAK-packaged IR-class HEXFET sits between logic-level signal FETs (such as the BSS series) and higher-current TO-220/TO-247 power MOSFETs, targeting medium-voltage, medium-current applications such as 24 V industrial buses, 48 V telecom rails, motor drivers, and synchronous buck converters. Key features of the IRFR120NTRPBF include a 100 V drain-to-source breakdown voltage, a continuous drain current of 9.4 A at TC, a pulsed avalanche rating, an intrinsic fast-recovery body diode, and an operating junction temperature range of -55C to +175C. The TO-252AA (DPAK) package has a low thermal resistance of approximately 50 C/W junction-to-case, allowing the die to dissipate up to 48 W when properly heatsunk. The device is RoHS compliant and uses a lead-free terminal finish, supporting modern Pb-free reflow profiles. Internally, the IRFR120NTRPBF uses Infineon's proprietary planar-strip HEXFET cell structure, which provides a low figure of merit (RDS(on) x Qg) and high dv/dt immunity. The die is avalanche-rated, meaning it can absorb unclamped inductive switching transients within its SOA. The gate threshold is typically 2-4 V, and the device is fully enhanced at a 10 V gate drive, which is compatible with standard MOSFET driver ICs and PWM controller outputs. The TO-252 footprint also offers a large source tab for PCB copper heatsinking. Typical applications for the IRFR120NTRPBF include synchronous-rectifier stages in isolated and non-isolated DC-DC converters, low-side switches in motor-drive H-bridges, solenoid and relay drivers, LED lighting power stages, and battery protection circuits in 12-24 V e-mobility and industrial systems. It is also widely used as a generic upgrade for older IRF-series parts such as the IRF120, IRF510, and IRFR120, where the lower RDS(on) and faster switching improve efficiency. When designing with this part, ensure the gate is driven with at least 10 V for full enhancement and that the PCB copper-pour area under the DPAK tab is sized to keep junction temperature below 150C at maximum load. For switching applications above 50 kHz, add a small gate-series resistor (10-100 ohm) to dampen ringing, and place a local 100 nF ceramic bypass from VCC to GND near the gate driver to suppress bootstrap ripple. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers quickly validate the IRFR120NTRPBF for new designs and legacy replacements.
IRFR220NPBF - 200V N-Channel HEXFET MOSFET, 5A | Infineon
The Infineon IRFR220NPBF is a 200 V N-channel HEXFET power MOSFET rated for 5 A continuous drain current (at TC) and 43 W power dissipation, housed in a surface-mount TO-252AA (DPAK) package. Built on Infineon's planar HEXFET technology, it delivers a maximum on-resistance of 0.6 ohm at VGS = 10 V and features a low gate-to-drain charge that minimizes switching losses in high-frequency circuits. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between its drain and source terminals. Within the power-management hierarchy, MOSFETs sit beneath voltage regulators and DC-DC converters as the fundamental switching element; they are classified as N-channel or P-channel by carrier type and as enhancement-mode or depletion-mode by default gate bias. The IRFR220NPBF is an N-channel enhancement-mode device designed for surface-mount assembly, placing it in the broader category of discrete power semiconductors alongside IGBTs and thyristors. Key specifications include a 200 V drain-to-source breakdown voltage (VDS), 5 A continuous drain current at TC = 25 C, 600 milliohm maximum static drain-source on-resistance (RDS(on)) at VGS = 10 V, and a fully characterized capacitance profile that includes effective COSS for simplified high-frequency design. The device also offers 100% avalanche-tested ruggedness, fast body-diode recovery, and is RoHS-compliant with a lead-free, halogen-free DPAK footprint compatible with vapor-phase, infrared, or wave soldering. Internally the IRFR220NPBF uses Infineon's mature planar cell architecture with a vertical DMOS structure, optimized for low gate charge (Qg) and low gate-to-drain charge (Qgd) to enable fast turn-on/turn-off transitions. This architecture suits it to hard-switched topologies up to several hundred kHz where switching loss dominates over conduction loss, and the fully characterized output capacitance simplifies ZVS and resonant converter design. Typical applications include high-frequency DC-DC converters, switch-mode power supplies (SMPS), motor drive low-side switches, solenoid drivers, and general-purpose power switching. Designers should observe safe operating area limits, especially in avalanche or inductive-switching scenarios, and ensure the tab thermal pad receives adequate copper area to keep junction temperature within the 150 C maximum rating.
IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon
The Infineon IRFR220NTRLPBF is a third-generation HEXFET N-channel power MOSFET rated at 200V V(BR)DSS, 5A continuous drain current (Tc), and 43W power dissipation (Tc), housed in a surface-mount TO-252AA (DPAK) package with a maximum on-resistance of 0.800 ohms. The device is built on Infineon's planar HEXFET process and is qualified for high-frequency DC-DC converter applications where fast switching and rugged avalanche performance are required. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. N-channel enhancement-mode MOSFETs like this one conduct when the gate is pulled above the source by the threshold voltage, and block when the gate is at or below it. Within the broader power-semiconductor hierarchy, discrete MOSFETs sit alongside IGBTs, thyristors, and GaN/SiC FETs as switching devices used in switched-mode power supplies (SMPS), motor drives, and load switches. Key features of the IRFR220NTRLPBF include a low gate charge (Qg) for fast switching at high frequencies, a fully characterized output capacitance (Coss) effective for resonant converter design, low gate-to-drain charge (Qgd) to minimize switching losses, and rugged avalanche-rated performance. The TO-252AA (DPAK) package has a low thermal-resistance path through the drain tab, allowing the part to dissipate 43W when mounted on a properly designed PCB copper pad. The "TRLPBF" suffix designates a tape-and-reel left orientation, lead-free (Pb-free) termination compatible with lead-free reflow soldering profiles. Architecturally, this device uses a planar cell structure with a HEXFET die optimized for low gate charge and high body-diode ruggedness. The avalanche rating and dv/dt capability make it tolerant of unclamped inductive switching events commonly encountered in flyback and buck converter topologies. Compared with older IRF220 designs, the "N" generation reduces on-resistance per unit area and improves switching loss characteristics. Typical applications include high-frequency DC-DC converters, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), battery chargers, motor drive circuits, and solenoid/relay drivers in industrial and consumer equipment. The 200V rating also makes it suitable for 120V rectified mains PFC stages and telecom secondary-side synchronous rectification. When designing with this device, ensure the gate driver can source/sink sufficient current to fully charge Qg within the desired switching interval, and provide adequate heatsinking through the DPAK tab to keep junction temperature below 150C under worst-case load. Verify that the maximum drain-source voltage rating includes sufficient margin for voltage spikes caused by transformer leakage inductance in isolated topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFR220NTRPBF is a 200V, 5A N-channel HEXFET power MOSFET housed in a surface-mount TO-252AA (DPAK) package. Key headline specifications include a 200V drain-to-source breakdown voltage (VDS), 5A continuous drain current at 25°C case temperature, 600 milliohm maximum on-resistance at VGS=10V, and 43W maximum power dissipation. The device is built on Infineon's proprietary IR MOSFET technology platform, which combines a vertical DMOS structure with a HEXFET cell layout to deliver low gate-to-drain charge and fully characterized capacitance for predictable switching performance. An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate current flow between drain and source terminals. Power MOSFETs sit within the broader discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. They are the workhorse switching element in switch-mode power supplies (SMPS), motor drivers, and DC-DC converters because they switch fast, require negligible drive current, and offer low on-resistance that minimizes conduction losses. The IR MOSFET family specifically targets medium-voltage industrial and consumer power-conversion applications where robustness, avalanche ruggedness, and ease of driving are required. Key differentiating features of the IRFR220NTRPBF include its low gate-to-drain charge (Qgd), which reduces switching losses in high-frequency DC-DC converter circuits; a fully characterized capacitance profile (Ciss, Coss, Crss) that simplifies driver design and EMI prediction; fully characterized avalanche energy rating for unclamped inductive switching events; and a logic-level-compatible gate threshold that allows direct drive from standard 10V gate-drive signals or 5V microcontrollers with an external charge pump. The TO-252AA (DPAK) surface-mount package provides a low thermal-resistance path from the silicon die to the PCB copper pad, enabling 43W dissipation at 25°C case temperature. From an architectural perspective, the IRFR220NTRPBF uses a planar HEXFET cell geometry optimized for 200V breakdown. The die is rated for 5A continuous drain current at TC=25°C, derating linearly with temperature to zero at 150°C junction temperature. The 600 milliohm Rds(on) at VGS=10V reflects the trade-off between conduction loss and silicon area in the 200V class; devices in this voltage class typically offer on-resistance values between 200 milliohm and 2 ohm. Typical applications for the IRFR220NTRPBF include high-frequency DC-DC converter power stages (buck, boost, half-bridge, and full-bridge topologies), solenoid and relay drivers, low-power motor control for small DC fans and pumps, and uninterruptible power supply (UPS) auxiliary switching. Its 200V rating also makes it suitable for 120V AC-line-derived rectified rails in industrial equipment. When designing with this device, ensure adequate PCB copper area beneath the DPAK tab to keep junction temperature below 150°C under worst-case load. Use a gate-drive resistor of 10 to 100 ohm to limit ringing and EMI, and add a gate-source pull-down resistor (10k to 100k ohm) to prevent accidental turn-on during supply transients. This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical PCB layout guidance for the IRFR220NTRPBF that is not found in the manufacturer datasheet alone.
IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon
The Infineon IRFR2405TRLPBF is a 55V, 56A N-channel HEXFET power MOSFET built on seventh-generation IR MOSFET technology and packaged in a surface-mount TO-252AA (DPAK) with on-resistance of 16 mOhm maximum and a gate charge of 70 nC typical. The device supports continuous drain current of 56 A at Tc and pulsed drain current up to 200 A, with power dissipation rated at 110 W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals in power conversion applications. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and within the broader taxonomy they belong to power management semiconductors that include IGBTs, voltage regulators, gate drivers, and DC-DC converters. They sit at the heart of switching power supplies, motor drives, and load switches where high efficiency and fast switching are required. Key features include an exceptionally low on-resistance per silicon area of 16 mOhm maximum at VGS = 10V, fast switching speed thanks to low gate charge, and ruggedized device design that HEXFET power MOSFETs are known for. The IRFR2405TRLPBF is rated for avalanche operation, providing energy handling capability for inductive switching events commonly encountered in motor control and relay-replacement circuits. Internally the device uses an advanced planar cell structure with a vertical DMOS architecture, integrating the body diode that allows half-bridge and synchronous-free topologies. The DPAK package offers a low thermal resistance path that, combined with the low RDS(on), keeps conduction losses low at high currents. Typical applications include DC motor drives, solenoid and relay drivers, power load switches, battery management, synchronous rectifier secondary-side switches, and high-current buck converter low-side switches in industrial, automotive, and renewable energy systems. A critical design consideration is the SOA: at high VDS and high duty-cycle operation, transient thermal behavior must be validated with the datasheet SOA curves to avoid exceeding junction temperature limits. This page synthesizes distributor pricing as of 2026-09-13, drop-in DPAK alternatives, and practical design notes not aggregated in the manufacturer datasheet.
IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFR2405TRPBF is a seventh-generation HEXFET N-Channel power MOSFET rated at 55 V VDS, 56 A continuous drain current (Tc), and 110 W maximum power dissipation, housed in a surface-mount TO-252AA (DPAK) package. It features an ultra-low on-resistance of 16 mOhm maximum at VGS=10V and a total gate charge of 70 nC, making it optimized for high-efficiency DC-DC conversion and low-side switching. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to switch and amplify signals in power-electronics circuits. As a member of the HEXFET family, this part uses Infineon's IR MOSFET process, a planar cell technology that combines low RDS(on) per silicon area with robust avalanche ruggedness. Within the broader taxonomy it sits under: N-Channel MOSFET -> Power MOSFET -> Discrete Semiconductor -> Power Management IC family. The DPAK (TO-252) surface-mount package enables compact PCB layouts while providing a large tab/drain thermal pad for heat extraction. Key specifications include 55 V drain-source breakdown voltage (VDS), 56 A continuous ID at 25C case temperature, 110 W power dissipation (PD), 16 mOhm RDS(on) max at VGS=10V, 70 nC typical gate charge (Qg), and an operating junction temperature range of -55C to +175C. The device is also characterized by fast switching, logic-level gate drive support at VGS=10V, and 100% avalanche-tested ruggedness per industry standards. The IRFR2405TRPBF uses Infineon's seventh-generation HEXFET process to achieve low on-resistance per unit silicon area while maintaining fast body-diode recovery and high dv/dt immunity. The advanced process technology reduces conduction losses substantially compared with earlier-generation 55V MOSFETs. Its drain tab doubles as the main thermal pathway, supporting sustained high-current operation with proper PCB copper heatsinking. Typical applications include automotive and industrial power management (load switching, reverse-battery protection), motor control and DC motor drive circuits, synchronous rectifier stages in DC-DC buck/boost converters, solenoid and relay drivers, and high-current switching in power tool electronics. The 55 V rating also makes it useful in 12 V and 24 V bus systems where inductive transients occur. When designing with this MOSFET, ensure the gate is driven with at least 10 V VGS to achieve full RDSon. Place a gate-source pull-down resistor (10-100 kOhm) to prevent accidental turn-on from high dV/dt transients. Provide adequate copper area on the drain tab for thermal dissipation - DPAK's thermal resistance depends directly on copper footprint size. This page synthesizes verified distributor pricing, drop-in same-package alternatives, and practical design guidance that is not consolidated on any single manufacturer or distributor page.
IRFR24N15DTRPBF - 150V 24A N-Channel HEXFET MOSFET | Infineon DPAK
The Infineon IRFR24N15DTRPBF is an N-channel HEXFET power MOSFET rated at 150 V drain-source breakdown voltage, 24 A continuous drain current (Tc), and 140 W power dissipation (Tc), housed in a TO-252AA (DPAK) surface-mount package with tape-and-reel packaging. It features a maximum on-state resistance of 0.082 ohm and is built on Infineon's IR MOSFET technology platform optimized for high-voltage switching. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify signals in power electronics. Within the taxonomy, a power MOSFET belongs to discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. N-channel MOSFETs such as the IRFR24N15DTRPBF conduct current when a positive gate-to-source voltage is applied, and they are the dominant choice for low-side switching because their lower on-resistance per die area delivers higher efficiency than equivalent P-channel parts. The HEXFET process technology used here is Infineon's planar-cell architecture optimized for ruggedness and switching performance at elevated voltages. Key features include 150 V VDS(max), 24 A ID(max) at Tc=25 C, 0.082 ohm RDS(on)(max), a ±30 V gate-source rating, total gate charge (Qg) of approximately 30 nC, and a single-pulse avalanche rating defined in the manufacturer's datasheet. The TO-252AA (DPAK) package provides a low thermal resistance path through the tab and supports surface-mount assembly while maintaining high-current capability. The part is offered with a Pb-free lead finish and is RoHS compliant. Internally, the IRFR24N15DTRPBF uses a planar DMOS cell structure with an optimized body diode for unclamped inductive switching. Its relatively low gate charge supports fast switching at moderate frequencies, and the wide safe operating area makes it suitable for hard-switched topologies. The combined ruggedness and avalanche rating make it a common choice for industrial power applications. Typical applications include DC-DC converters, three-phase motor drives, industrial automation power stages, battery management and protection circuits, and solar inverters. The 150 V rating provides comfortable headroom for 48 V bus systems and rectified AC supplies. When designing with this MOSFET, ensure gate-drive voltage is at least 10 V to fully enhance the channel and minimize conduction loss. A small gate-source resistor (typically 10-100 ohm) is recommended to suppress ringing, and the tab thermal pad should be soldered to a sufficient copper area to stay within the thermal rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IRFR2905ZTRPBF - 55V N-CH HEXFET MOSFET, 14.5mΩ | Infineon
The Infineon IRFR2905ZTRPBF is a 55V N-channel HEXFET power MOSFET utilizing Infineon's latest process techniques to deliver an extremely low on-resistance of 14.5 mΩ (max) per silicon area, packaged in a surface-mount TO-252AA (DPAK) outline. It supports continuous drain current up to 59 A at 25 °C case and 42 A at 110 W case-power rating, making it suitable for high-current DC switching applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching or amplifying electronic signals, and is a key building block of modern power management. HEXFET is Infineon's (formerly International Rectifier) trademarked trench MOSFET technology, which places the gate in a vertical trench to maximize cell density and minimize RDS(on). The IRFR2905Z family sits inside the broader power MOSFET taxonomy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management, where it is typically used as a low-side switch, high-side switch, or synchronous rectifier in switch-mode power supplies (SMPS), motor drives, and load switches. Key features include a 175 °C maximum junction operating temperature, fast switching speed, improved repetitive avalanche rating, and a low typical gate charge (Qg) of 29 nC. The device is built on Infineon's IR MOSFET process, optimized for low conduction loss in DC-DC converters, motor control H-bridges, and battery protection circuits. Its avalanche-rated design also improves reliability in inductive load switching. The IRFR2905ZTRPBF's typical gate threshold VGS(th) sits in the 2.0 V to 4.0 V range with full enhancement at 10 V VGS, making it directly compatible with standard 5 V/12 V gate-drive logic when used at the higher gate voltage. The combination of low RDS(on), high ID, and DPAK thermal performance (PD = 110 W at Tc = 25 °C) makes it well suited for synchronous rectification in buck converters, where conduction losses dominate at high load currents. Typical applications include high-current DC-DC buck converters, synchronous rectification stages in SMPS, battery management and protection in 12 V/24 V systems, motor-drive H-bridges, and power-OR / load-share circuits. Its low RDS(on) also makes it attractive for hot-swap controllers and eFuse implementations. When designing with this part, pay attention to gate-drive voltage: a 10 V VGS is required to fully enhance the channel and achieve the datasheet 14.5 mΩ RDS(on). At 5 V VGS, RDS(on) roughly doubles, so verify that your gate driver can swing to 10 V. Also use Kelvin-source PCB layout when possible, especially above 30 A, to avoid parasitic source-inductance-induced switching losses. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, with parametric comparisons and recommended companion components for a complete design-in.
IRFR3411TRPBF - 100V 32A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFR3411TRPBF is a 100V, 32A single N-channel HEXFET power MOSFET housed in a surface-mount TO-252AA (DPAK) package. Built on advanced process technology, it delivers an ultra-low on-resistance of 44 mOhm maximum at VGS=10V and supports continuous drain current up to 32A at Tc, with a power dissipation rating of 130W at Tc. Key specifications include V(BR)DSS of 100V, RDS(on) max of 44 mOhm, gate charge of 48 nC, and a maximum junction temperature of 175C enabling reliable operation in thermally demanding environments. The device features dynamic dv/dt rating, fast switching speed, and full avalanche rated ruggedness, making it suitable for switching power supply designs that encounter inductive load transients. The IRFR3411TRPBF utilizes Infineon's HEXFET Power MOSFET technology, leveraging advanced process techniques to achieve extremely low on-resistance per silicon area while maintaining fast switching characteristics. The combination of low RDS(on), high continuous current capability, and avalanche ruggedness provides high efficiency and reliability across demanding power conversion topologies. Typical applications include DC-DC converters, synchronous rectification in switched-mode power supplies (SMPS), motor drive circuits, and solenoid/relay drivers. The TO-252AA (DPAK) surface-mount package enables automated PCB assembly while providing sufficient thermal performance for medium-power applications up to approximately 130W with proper PCB copper area. When designing with this device, ensure adequate thermal management - calculate power dissipation as P = I^2 x RDS(on) and verify junction temperature stays below 175C using the package's thermal resistance and the application's copper area. A gate drive voltage of 10V is recommended for full RDS(on) specification; lower gate voltages significantly increase conduction losses.
IRFR3504ZTRPBF - 40V 77A 9mΩ HEXFET N-Channel MOSFET | Infineon
The Infineon IRFR3504ZTRPBF is a 40 V N-channel HEXFET power MOSFET rated for 77 A continuous drain current (package-limited to 42 A at TC) with an extremely low 9 mΩ maximum on-resistance at VGS=10 V, packaged in a surface-mount TO-252AA (DPAK). It belongs to Infineon's logic-level HEXFET family and is optimized for 5 V gate drive, making it directly compatible with microcontrollers, gate drivers, and battery-powered systems without external charge-pump circuitry. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for switching and amplifying signals in power electronics. Within the broader semiconductor taxonomy, a MOSFET sits under discrete semiconductors -> transistors -> MOSFETs, and within the power-management family it serves as the primary switching element in DC-DC converters, motor drivers, and synchronous rectification. The HEXFET process refers to Infineon's hexagonal cell layout, which maximizes silicon utilization and minimizes RDS(on) per unit area. Key features of this part include a 9 mΩ max RDS(on) at VGS=10 V, 30 nC typical total gate charge (Qg), logic-level VGS(th) of approximately 1.0–2.0 V enabling full enhancement at 4.5 V gate drive, 175 °C maximum operating junction temperature, and avalanche-rated construction for inductive-switching robustness. The device is qualified per JEDEC standards and supplied on tape-and-reel for high-volume automated assembly. Typical applications include high-side/low-side switching in synchronous buck converters, BLDC and brushed DC motor drive, battery protection and load switching in 12 V automotive subsystems, solenoid and relay drivers, and OR-ing / hot-swap circuits. The 40 V drain-source rating provides ample headroom for nominal 12 V and 24 V bus rails including transients. When designing with this device, gate-drive layout is critical: keep the gate-loop loop area under 1 cm² to limit ringing, use a gate-source resistor of 10–100 Ω to dampen oscillations, and derate continuous drain current for PCB copper area and ambient temperature. The DPAK footprint dissipates 90 W at TC=25 °C but only a fraction of that in free air; a thermal pad with sufficient copper pour is mandatory for high-current designs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for sourcing and implementing this part.
IRFR3607TRPBF - 75V 56A N-Channel HEXFET MOSFET | Infineon | DPAK
The Infineon IRFR3607TRPBF is a 75V N-channel HEXFET power MOSFET supplied in a TO-252AA (DPAK) surface-mount package, rated for 56A continuous drain current (Tc) and 140W power dissipation. It is built on Infineon's planar HEXFET cell architecture and is characterized for synchronous rectification in switch-mode power supplies (SMPS), hard-switched topologies, and high-frequency DC-DC converters. Typical on-state resistance is 9 mOhm at VGS=10V, ID=46A, with a total gate charge of 56 nC and a +/-20V gate-to-source rating. A power MOSFET is a voltage-controlled field-effect transistor designed to switch large amounts of current at high efficiency. Within the discrete semiconductor family, MOSFETs sit alongside diodes, IGBTs, and thyristors; they are the workhorse switching element in modern DC-DC converters, motor drives, battery protection circuits, and synchronous rectification stages that replace Schottky diodes to cut conduction losses in low-voltage, high-current rails. Key specifications include a VDS breakdown of 75V, an on-state resistance of 9 mOhm at VGS=10V / ID=46A, a gate threshold of 4V (typical), a continuous drain current of 56A at case, and a junction-to-case thermal resistance of 1.0 C/W. The device offers fully characterized capacitance and avalanche SOA, providing margin against inductive load transients. The TO-252AA (DPAK) package exposes the drain tab as a thermal pad for direct PCB copper heat spreading. The HEXFET architecture combines a planar DMOS cell with optimized die area to minimize RDS(on) * Qg figure-of-merit, reducing both conduction and switching losses. Avalanche-rated energy and a wide SOA make the part tolerant of unclamped inductive switching events common in motor and solenoid drive stages. Typical applications include synchronous rectification in SMPS output stages, high-current DC-DC buck/boost converters, motor control and H-bridge drives, battery management and protection FETs in server/telecom power stages, and low-voltage hot-swap controllers. Pricing is approximately $0.29 (LCSC, as of 2026-08-29) to $2.26 per unit (Infineon, as of 2026-08-29). When designing with this device, drive the gate with 10V for the lowest RDS(on) and use a substantial copper pour on the drain tab to keep Tj below 125C. Account for bond-wire current derating above 56A continuous. This page synthesizes distributor pricing, same-package drop-in alternatives, and practical thermal/layout design notes not consolidated in the manufacturer datasheet.
IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon
The Infineon IRFR3710ZTRLPBF is an N-channel HEXFET power MOSFET rated at 100 V VDS, 42 A continuous drain current (at Tc) and 140 W power dissipation, housed in a surface-mount TO-252AA (DPAK) package. It uses Infineon's latest silicon processing to deliver an extremely low on-resistance per silicon area of 18 mΩ (max RDS(on)), making it one of the most efficient 100 V N-MOSFETs in DPAK packaging. What is an N-channel HEXFET power MOSFET? A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. The HEXFET process is a proprietary Infineon (formerly International Rectifier) hexagonal-cell planar technology that minimizes on-resistance per unit die area. In a broader taxonomy: power MOSFET -> discrete semiconductor -> semiconductor -> electronic component. N-channel MOSFETs are preferred for low-side switching because they offer lower RDS(on) than equivalently sized P-channel parts, making them the default choice for synchronous rectification, motor drive and DC-DC conversion. Key features of this part include 175°C maximum junction temperature, fast switching speed, improved repetitive avalanche rating, 69 nC total gate charge, and an Avalanche Energy Rating (EAS) of 150 mJ. The 100 V drain-source breakdown voltage and 42 A continuous drain current make it suitable for high-current switching applications operating from 12 V, 24 V or 48 V rails. The DPAK (TO-252AA) surface-mount package provides a low thermal resistance path through the tab to the PCB copper pour, enabling 140 W power dissipation with appropriate board layout. Its 3-pin (2+tab) configuration matches the industry-standard DPAK footprint used by hundreds of similar 100 V MOSFETs, simplifying PCB design. Typical applications include DC-DC converter primary switches, synchronous rectification in switch-mode power supplies, motor control H-bridges, solenoid drivers, and automotive ECU loads. Designers often select this part for 12 V/24 V automotive and industrial systems where high current handling and rugged avalanche performance are required. When designing with this MOSFET, prioritize a low-inductance gate-drive loop and a sufficiently large PCB copper area under the tab to keep junction temperature within SOA. The 18 mΩ on-resistance means conduction losses at 20 A are roughly 7.2 W; combine this with switching losses to confirm thermal headroom. This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical thermal/layout notes that go beyond what the bare datasheet provides, enabling faster design decisions.
IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon
The Infineon IRFR3710ZTRPBF is an N-channel HEXFET power MOSFET rated at 100 V drain-source voltage and 56 A continuous drain current (at 25 °C), housed in a surface-mount TO-252AA (DPAK) package. It uses Infineon's advanced process technology to deliver extremely low on-resistance per silicon area, with a maximum RDS(on) of 18 mOhm at VGS = 10 V, making it well suited for high-efficiency switching applications. The device operates from a standard 10 V gate drive and is rated for 140 W continuous power dissipation at Tc = 25 °C. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate field effect to modulate current flow between the drain and source terminals. Within the discrete semiconductor taxonomy, MOSFETs belong to the field-effect transistor family and serve as the fundamental building block of switched-mode power supplies, motor drives, and synchronous rectification stages. The DPAK (TO-252AA) package is one of the most widely adopted surface-mount outlines for medium-power MOSFETs because its exposed thermal pad provides a low thermal resistance path while keeping the PCB footprint compact. Key features of the IRFR3710ZTRPBF include a 175 °C maximum junction operating temperature for high ambient or pulsed-power environments, fast switching speed suitable for high-frequency converters, an improved repetitive avalanche rating for inductive load switching, and a logic-level-friendly 10 V VGS(th) typical gate threshold. The low RDS(on) of 18 mOhm directly reduces conduction losses and improves thermal performance in continuous-current paths such as low-side switches and synchronous rectifiers. Architecturally, the device uses Infineon's HEXFET cell structure, a planar/vertical DMOS design optimized for low figure-of-merit (RDS(on) × Qg) and rugged avalanche capability. This combination delivers strong efficiency in hard-switched topologies and resilience against voltage transients induced by motor windings or transformer leakage inductance. Typical applications include DC-DC buck/boost converters, synchronous rectification in isolated power supplies, motor drive H-bridges, solenoid and relay drivers, battery protection circuits, and hot-swap controllers. The DPAK footprint also makes it attractive for space-constrained industrial and telecom power designs. When designing with this MOSFET, ensure the gate driver can source and sink the Qg charge quickly to minimize switching losses, and observe SOA limits at high VDS and high drain current. A low-impedance gate-drive loop and adequate PCB copper under the thermal pad are required to realize the rated 140 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRFR3806TRPBF - 60V 43A N-Ch HEXFET MOSFET, DPAK | Infineon
The Infineon IRFR3806TRPBF is an N-channel power MOSFET rated at 60 V VDS and 43 A continuous drain current (Tc), housed in a surface-mount TO-252AA (DPAK) package. It uses Infineon's HEXFET technology with a maximum on-state resistance of 15.8 mOhm at VGS = 10 V and a total gate charge of 22 nC, optimized for high-efficiency synchronous rectification and high-speed power switching. A power MOSFET is a voltage-controlled semiconductor switch used to route or chop current in power conversion circuits. MOSFETs sit in the discrete-semiconductor branch of the power-conversion hierarchy (MOSFET -> transistor -> discrete semiconductor), and N-channel enhancement-mode devices like the IRFR3806 are the workhorse switches on the low-side of buck converters, the primary switch in boost stages, and the synchronous rectifier that replaces lossy Schottky diodes. Low RDS(on) directly reduces conduction loss, while low gate charge (Qg) and low Qgd shorten switching transitions and shrink switching loss, together determining total converter efficiency. Key features of the IRFR3806TRPBF include 60 V drain-source breakdown voltage, 43 A continuous drain current at case temperature, 15.8 mOhm maximum RDS(on) at VGS = 10 V, 22 nC total gate charge, 71 W maximum power dissipation at Tc = 25 C, and an industry-standard DPAK (TO-252AA) surface-mount footprint. The device is rated for an operating junction temperature range up to 175 C, suitable for thermally demanding SMPS designs. The IRFR3806 is built on Infineon's proprietary HEXFET process, which uses a planar stripe-cell geometry and a vertical DMOS structure. This yields an excellent figure of merit (FOM = RDS(on) x Qg) for 60 V synchronous-rectification applications and gives a robust avalanche-rated body diode, simplifying dead-time management in bridge topologies. Compared with older IRF-series parts the IRFR3806 lowers gate charge by roughly a third at similar RDS(on), reducing driver losses in high-frequency designs. Typical applications include high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS) and battery-backed DC systems, high-speed power switching in motor drives, and hard-switched high-frequency DC-DC converter primary-side switches. The 60 V rating makes it well suited to 24 V / 28 V bus architectures and 48 V telecom intermediate rails. When designing with this part, place the gate-drive loop (gate resistor + driver) physically small to control ringing and dv/dt-induced turn-on. A 10 V gate-drive source is required to reach the published RDS(on); logic-level drive (5 V) will not fully enhance the channel and will raise conduction loss significantly. For synchronous rectification, add a small dead-time (typically 30-100 ns) to prevent shoot-through. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet - including a same-brand family cross-reference and validated cross-brand DPAK drop-ins.