IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon
Référence : IRFR2405TRLPBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.18 | $1,18 |
| 10 | $1.02 | $10,20 |
| 100 | $0.86 | $86,00 |
| 500 | $0.74 | $370,00 |
| 1 000 | $0.63 | $630,00 |
| 3 000 | $0.55 | $1 650,00 |
IRFR2405TRLPBF Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals in power conversion applications. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and within the broader taxonomy they belong to power management semiconductors that include IGBTs, voltage regulators, gate drivers, and DC-DC converters. They sit at the heart of switching power supplies, motor drives, and load switches where high efficiency and fast switching are required.
Key features include an exceptionally low on-resistance per silicon area of 16 mOhm maximum at VGS = 10V, fast switching speed thanks to low gate charge, and ruggedized device design that HEXFET power MOSFETs are known for. The IRFR2405TRLPBF is rated for avalanche operation, providing energy handling capability for inductive switching events commonly encountered in motor control and relay-replacement circuits.
Internally the device uses an advanced planar cell structure with a vertical DMOS architecture, integrating the body diode that allows half-bridge and synchronous-free topologies. The DPAK package offers a low thermal resistance path that, combined with the low RDS(on), keeps conduction losses low at high currents.
Typical applications include DC motor drives, solenoid and relay drivers, power load switches, battery management, synchronous rectifier secondary-side switches, and high-current buck converter low-side switches in industrial, automotive, and renewable energy systems.
A critical design consideration is the SOA: at high VDS and high duty-cycle operation, transient thermal behavior must be validated with the datasheet SOA curves to avoid exceeding junction temperature limits.
This page synthesizes distributor pricing as of 2026-09-13, drop-in DPAK alternatives, and practical design notes not aggregated in the manufacturer datasheet.
Alternatives de remplacement direct pour IRFR2405TRLPBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IRFR2405TRLPBF (même facteur de forme et même empreinte) — différant par Technology, Operating Temperature Range, Package, Drain-Source Voltage (VDS), Total Gate Charge (Qg).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRFR2405TRPBF
✅ Remplacement direct✓ En stock
$0.61 / unité
Voir la fiche technique →AUIRFR2405TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFR3711ZPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFR2905ZPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFR1010ZPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SUM55N06-16P-E3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NTD6416AN-1G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFR2405TRLPBF Valeurs maximales et caractéristiques électriques
| Type de transistor | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET, 7th generation) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc | 56 A |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm |
| Gate Charge (Qg) typical | 70 nC |
| Power Dissipation (PD) at Tc | 110 W |
| Gate-Source Voltage (VGS) max | ±20 V |
| Plage de température de fonctionnement | -55 C to +175 C (junction) |
| Boîtier | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Type de montage | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | Tape & Reel (TR) |
Configuration des broches de IRFR2405TRLPBF
| Broche 1 | Gate — Gate control input; positive VGS turns the device on |
| Broche 2 | Drain — Power drain terminal; electrically and thermally connected to the tab |
| Broche 3 | Source — Source terminal; return path for gate drive and load current |
| Broche TAB | Drain (Tab) — Metal tab electrically connected to Drain; serves as primary thermal path to PCB copper |
IRFR2405 Zone de fonctionnement sûr
Applications typiques
IRFR2405TRLPBF convient pour 6 applications: Brushed DC Motor Drive (H-Bridge), Solenoid and Relay Driver, Battery Management and Load Switch, Synchronous Rectifier in Secondary Side, Power Load Switch (Hot Swap), Uninterruptible Power Supply (UPS) Output Stage.
Brushed DC Motor Drive (H-Bridge)
The IRFR2405TRLPBF suits low-side switching positions in 12V/24V brushed DC motor H-bridges, where its 16 mOhm RDS(on) keeps conduction losses below 5W at 15A continuous, while 200A pulsed rating handles motor inrush. The 55V VDS provides ample headroom for 24V bus transients. In a typical 20kHz PWM loop, low 70 nC Qg allows direct TTL-level gate drive without bootstrap pumps, simplifying the design.
Recommandé
Solenoid and Relay Driver
For 12V/24V automotive solenoids and relay-replacement circuits, the IRFR2405TRLPBF provides avalanche-rated switching that absorbs inductive kickback without external TVS clamps. The 110W dissipation rating at Tc supports steady-state currents up to 56A in continuous solenoid hold applications. Pair the device with a flyback diode and gate resistor of 10-100 ohm for clean switching.
Recommandé
Battery Management and Load Switch
In lithium battery packs and UPS systems, the IRFR2405TRLPBF acts as a low-loss load disconnect switch. At 30A continuous load on a 24V rail, the 16 mOhm RDS(on) drops only 0.48V across the device, dissipating 14.4W manageable with minimal heatsinking. The 175 C maximum junction temperature supports hot environments, and PBF marking ensures RoHS compliance for portable battery products.
Recommandé
Synchronous Rectifier in Secondary Side
On the secondary side of isolated DC-DC converters, the IRFR2405TRLPBF can replace Schottky diodes to gain 0.5-1% efficiency. Its low Qg of 70 nC and fast body diode recovery suit 100-300 kHz switching frequencies. The 55V rating handles 24V outputs with margin, and the DPAK footprint supports compact SMD layouts in point-of-load converters.
Recommandé
Power Load Switch (Hot Swap)
The IRFR2405TRLPBF works as a hot-swap controller pass element for plug-in cards and industrial modules. During card insertion, the MOSFET limits inrush by operating in linear region; once fully enhanced, the 16 mOhm RDS(on) carries full load with minimal loss. The 56A continuous rating exceeds typical 12V/10A hot-swap requirements, providing 5x design margin.
Recommandé
Uninterruptible Power Supply (UPS) Output Stage
In offline UPS and inverter outputs, the IRFR2405TRLPBF drives low-frequency 50/60 Hz square-wave inverter stages or high-frequency PWM stages. Its rugged avalanche capability absorbs reverse energy from inductive transformer windings, while 110W power dissipation supports continuous 56A operation with proper heatsinking. The DPAK package allows dense PCB layouts in space-constrained UPS modules.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IRFR2405TRLPBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRFR2405TRPBF | AUIRFR2405TR | IRFR3711ZPBF | SUM55N06-16P-E3 | NTD6416AN-1G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology | onsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| VDS (Drain-Source Voltage) | 55 V | 55 V | 55 V | 100 V | 60 V | 100 V |
| Continuous Drain Current (Tc) | 56 A | 56 A | 56 A | 42 A | 55 A | 17 A |
| RDS(on) max @ VGS=10V | 16 mOhm | 16 mOhm | 16 mOhm | 6 mOhm | 16 mOhm | 70 mOhm |
| Power Dissipation (Tc) | 110 W | 110 W | 110 W | 79 W | 107 W | 55 W |
| Automotive Qualified (AEC-Q101) | No (commercial) | No | Yes (AEC-Q101) | No | No | No |
| Approx. Unit Price (qty 1, USD) | 1.18 | 0.95 | 1.85 | 1.45 | 1.05 | 0.85 |
Principaux différenciateurs
- Proven seventh-generation HEXFET silicon in DPAK (vs AUIRFR2405TR)
- Higher voltage headroom than IRFR2405 family default (vs IRFR3711ZPBF)
- Cross-brand pin-compatibility enables second sourcing (vs SUM55N06-16P-E3)
Notes de conception
Estimated: at 30A continuous load on a DPAK mounted to 1 oz copper with 1 square inch of pour, the IRFR2405TRLPBF dissipates approximately 14.4W (30A^2 * 16 mOhm). With DPAK junction-to-ambient thermal resistance of approximately 50 C/W on minimal copper, junction rise would be 720 C - clearly impossible. Practical mounting requires at least 4-6 square inches of copper, or a small clip-on heatsink for continuous 30A+ operation. Always consult the datasheet SOA curve for your specific VDS/ID operating point before relying on a heatsink-free design.
The DPAK thermal pad must be soldered to a copper pour that serves as both electrical drain contact and thermal dissipation path. Use thermal vias (typically 0.3mm diameter, 6-9 vias in a 3x3 array) under the tab to conduct heat to inner PCB copper layers. Maintain at least 5mm clearance between the drain pad and any signal trace routed on the same layer to prevent high-voltage arcing under fault conditions.
The IRFR2405TRLPBF gate is rated at +/-20V VGS maximum. Exceeding this - even briefly during switching transients from inductive loads - can permanently damage the gate oxide. Add a 10k-100k resistor from gate to source to ensure the device stays off when the gate driver is floating, and add a Zener clamp (15V) from gate to source for protection against VDS-to-VGS coupling transients in half-bridge topologies.
Keep the gate drive loop (gate-driver output -> gate -> source -> gate-driver ground return) as small as possible - ideally under 1 square cm of loop area - to minimize parasitic inductance that causes gate ringing and false triggering. Place the gate drive resistor (typically 10-100 ohm) close to the MOSFET gate pin, not at the driver output, to dampen the LC tank formed by trace inductance and MOSFET input capacitance (Ciss).
Informations de conformité
PBF suffix denotes lead-free plating and RoHS compliance per Infineon product marking. Commercial grade only; for AEC-Q101 automotive qualification, select AUIRFR2405 variant. REACH compliance inferred from manufacturer declaration.
