Semi-conducteurs discrets
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Produits (1814)
SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay
The Vishay Siliconix SI1553DL-T1-E3 is a complementary 20 V N-channel and P-channel TrenchFET power MOSFET array housed in a 6-pin SC-70 (also identified as SOT-363 / SC-88) surface-mount package. It delivers 660 mA continuous drain current on the N-channel and 410 mA on the P-channel, with a low on-resistance of approximately 5 Ω at a 2.5 V gate drive, enabling direct switching from standard 2.5 V, 3.3 V, or 5 V logic rails. A MOSFET array (also called a MOSFET pair or dual MOSFET) is a single-package device that integrates two discrete MOSFETs - typically one N-channel and one P-channel - into a common footprint. MOSFET arrays belong to the broader category of discrete semiconductors, specifically the power MOSFET subfamily, which in turn is part of the transistor family and the broader semiconductor device hierarchy. By combining both polarities in one IC, designers can build complementary switches, level shifters, load switches, and small-signal analog stages without placing two separate SOT-23 or SC-70 parts. Key features include a 1 V typical gate threshold, low on-resistance of 5 Ω at VGS = 2.5 V, fast switching, and a compact 6-lead SC-70 (SC-88 / SOT-363) outline. The TrenchFET process geometry shrinks the channel resistance per unit area, allowing the device to deliver higher current than older planar MOSFET generations within the same die footprint. The complementary N/P architecture lets designers replace two discrete transistors - one N-channel and one P-channel - with a single part, simplifying PCB layout and reducing BOM count. This is particularly useful where space is constrained and the two devices must be thermally and electrically matched. Typical applications include load switching in portable and battery-powered devices, level translation between 1.8 V/3.3 V logic domains, power-rail gating in smartphones and wearables, LED driver stages, and small-signal analog switching. The 2.5 V gate threshold allows direct interface with sub-3 V microcontrollers without a separate gate driver. When designing with the SI1553DL-T1-E3, observe standard MOSFET handling precautions: gate oxide breakdown voltage is 8 V, so do not exceed this rating under transient conditions, and ensure the gate-source voltage stays within datasheet limits. Use a gate resistor in the 10 Ω to 100 Ω range to control ringing and EMI during high-speed switching. This page consolidates distributor pricing, drop-in compatible alternatives, and PCB-level design notes in one place - a synthesis not found in the standalone Vishay datasheet.
SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay
The Vishay SI1553DL-T1-GE3 is a complementary N-channel and P-channel MOSFET array housed in a 6-pin SC-70 (SOT-363) surface-mount package, rated for 20 V drain-source breakdown and 700 mA (N-channel) / 500 mA (P-channel) continuous drain current. It integrates both polarities of small-signal TrenchFET power MOSFETs on a single die to save board space in switching and level-shift circuits. The -GE3 suffix indicates lead-free and halogen-free termination finish, complying with RoHS and IEC 61249-2-21 halogen-free definitions. A complementary MOSFET pair (N-channel + P-channel on one substrate) is a building block for low-power switching applications where symmetrical high-side / low-side or push-pull drive is needed without using two discrete transistors. The two MOSFETs share the same 20 V VDS rating and 2.5 V gate-source threshold range, allowing them to be driven from the same logic-level control signal without level translation. By integrating both polarities in one SC-70 package, designers can halve the board footprint of equivalent discrete solutions and improve channel-to-channel thermal and parametric matching. Key features include a low on-resistance of approximately 0.32 ohm at VGS = 4.5 V (N-channel) and 0.5 ohm (P-channel), making the part efficient for portable and battery-powered designs. The TrenchFET process technology minimizes RDS(on) per unit area, while 2.5 V gate threshold supports direct drive from 1.8 V and 3.3 V microcontroller GPIO outputs with logic-level enhancement. The SC-70-6 package provides a compact 2.0 x 1.25 mm footprint suited for handheld and wearable products, and the device is qualified over the -55C to +150C junction temperature range. Typical applications include load switching in portable electronics, signal-level shifting between domains of different voltage rails, analog multiplexer / demultiplexer building blocks, and complementary push-pull drivers for small DC fans, relays, or LED strings. The small footprint also suits wearable health monitors and IoT sensor nodes where PCB area is at a premium. When designing with this device, note that the N-channel and P-channel devices share the same SC-70 pinout but are not interchangeable with single-channel equivalents. Plan gate-drive RC snubbers and ensure VGS never exceeds the absolute maximum of +/- 8 V. For high-frequency circuits, keep the gate-loop PCB inductance low to prevent unintended ringing during switching transitions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay
The Vishay Siliconix SI1563DH-T1-E3 is a complementary 20 V N/P-channel MOSFET array housed in a 6-pin SC-70-6 (SOT-363) surface-mount package with a maximum power dissipation of 570 mW. The N-channel device is rated at 1.13 A continuous drain current, while the P-channel companion is rated at 880 mA, both optimized for low-threshold gate drive from a 1.8 V or 2.5 V logic-level source. An N/P complementary MOSFET pair is a single-package integration of one N-channel and one P-channel enhancement-mode MOSFET, allowing designers to build push-pull, level-shift, load-switch, and small-signal analog switches with a single SOT-363 footprint. Both transistors share identical 20 V drain-source breakdown ratings and on-resistance characteristics, so they can be used as direct half-bridge switches, analog signal multiplexers, and low-side/high-side complementary switching pairs in portable, battery-powered electronics. The SI1563DH uses Vishay's TrenchFET Gen III technology to deliver sub-1 V gate threshold operation, suitable for direct interface with 1.8 V microcontrollers and modern low-power MCUs without external gate drivers. Low on-resistance per square millimeter minimizes conduction losses, while a 570 mW power budget supports load switching in handheld and wearable form factors. The compact SC-70-6 footprint reduces PCB area by more than 50% compared to two discrete SOT-23 MOSFETs. Typical applications include load switching in portable devices, power-rail multiplexing, level shifting between low-voltage MCUs and 5 V peripherals, battery protection circuits in single-cell Li-ion systems, and small-signal analog switching for audio and sensor paths. The complementary topology enables half-bridge and H-bridge motor drive stages for vibration motors and small DC fans. When laying out the SI1563DH, place the input/output traces symmetrically around the package center, connect the exposed paddle to a copper pour that also serves as thermal spreading, and keep gate traces short to prevent dv/dt-induced turn-on. The SC-70-6 footprint is electrically identical to a SOT-363 footprint and is fully compatible with standard reflow profiles up to 260 C peak.
SI2337DS-T1-E3 - P-Channel 80V 2.2A TrenchFET MOSFET | Vishay
The Vishay Siliconix SI2337DS-T1-E3 is a P-Channel 80V TrenchFET power MOSFET rated for 2.2A continuous drain current (Tc), with on-resistance of 270 mOhm max at Vgs = 10V, packaged in a compact SOT-23-3 (TO-236) surface-mount form. It dissipates 760 mW (Ta) or 2.5 W (Tc) and operates across a -55C to +150C junction temperature range, suitable for space-constrained switching applications. A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled transistor that conducts when the gate is pulled below the source. P-Channel parts simplify high-side switching designs because the load can sit at ground rather than at the switched rail, eliminating the need for a charge pump or bootstrap circuit in many topologies. Within the power semiconductor hierarchy, P-Channel MOSFETs belong to discrete semiconductors -> transistors -> MOSFETs, and they sit alongside N-Channel MOSFETs, IGBTs, and bipolar transistors as the workhorses of modern power conversion. Key features include the TrenchFET generation-3 cell architecture which reduces Rds(on) per unit silicon area, an integrated antiparallel body diode that simplifies synchronous-free designs, and halogen-free construction per IEC 61249-2-21. The -80V Vds rating provides substantial headroom for 48V telecom rails, automotive load-dump transients, and industrial bus switching. The SOT-23-3 footprint keeps the part compatible with hand-soldering and standard reflow profiles used by hobbyist and production lines alike. In load-switch and high-side switch topologies, the SI2337DS-T1-E3 reduces BOM count by removing the need for gate-drive transformers. The trench-gate structure minimizes conduction losses, while the small SOT-23-3 outline supports high-density PCB layouts. Designers targeting USB power switches, battery protection circuits, and DC/DC converters benefit from its low gate charge and fast switching edges. Typical applications include USB port power switching, battery management system (BMS) charge/discharge FETs, load switching in portable electronics, and high-side drive of relays and solenoids. The wide -55C to +150C operating range also suits automotive underhood modules and industrial controls. When designing with this device, derate conduction current aggressively above 25C ambient - the 2.2A Tc rating drops to roughly 0.6A at 70C in still air. Use a gate resistor of 10-100 ohm to limit ringing, and ensure Vgs stays below the +-20V absolute maximum to avoid gate-oxide rupture.
SI7155DP-T1-GE3 - 40V P-Channel TrenchFET MOSFET | Vishay
The Vishay Siliconix SI7155DP-T1-GE3 is a P-Channel TrenchFET Gen III power MOSFET rated for -40 V VDS, supporting continuous drain current up to 31 A at TA=25C and pulsed current capability up to 100 A at TC=25C, housed in a compact PowerPAK SO-8 surface-mount package. Key specifications include a maximum drain-source voltage of -40 V, a gate threshold of -20 V VGS, continuous drain current of 31 A (TA) / 100 A (TC), and pulsed drain current of 100 A per the device datasheet. The part dissipates 6.25 W at TA and 104 W at TC, and carries the industry-leading TrenchFET Gen III RDS(on) ratings that make it competitive with much larger packages like DPAK. A P-Channel MOSFET (PMOS) is a four-terminal field-effect transistor in which the channel conducts when the gate is pulled below the source potential. PMOS devices are commonly used as high-side switches because their source is tied to the load return and a gate voltage below ground can fully enhance the channel. Power MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> TrenchFET family, and Vishay's PowerPAK SO-8 package is the recognized SMD alternative to through-hole DPAK footprints where PCB real estate and thermal performance must coexist. The SI7155DP benefits from 100 % Rg (gate resistance) and UIS (avalanche / Unclamped Inductive Switching) tested reliability per Vishay's manufacturing flow. The PowerPAK SO-8 case provides a low thermal resistance path from the die to the PCB copper, which in many applications eliminates the need for an external heatsink while still delivering D2PAK-class current handling. Typical applications for the SI7155DP-T1-GE3 include adapter and charger load switches, server and telecom power systems OR-ing and high-side switching, battery protection circuits in portable equipment, and high-power load management in industrial DC distribution. When designing the gate drive, designers should pull VGS to approximately -10 V for full enhancement and keep gate-source voltage strictly within the absolute maximum of +/-20 V to avoid gate-oxide breakdown. Source-pin layout should route the high-current return first to minimize package parasitic inductance between the source bond wire and the main current path. This page synthesizes Vishay distributor pricing tiers, drop-in PowerPAK SO-8 alternatives, and practical PCB layout notes that go beyond the raw datasheet information.
SI7460DP-T1-GE3 - 60V N-Ch TrenchFET PowerPAK SO-8 | Vishay
The Vishay Siliconix SI7460DP-T1-GE3 is an N-Channel 60 V TrenchFET® power MOSFET rated for 11 A continuous drain current (TA=25 °C) and packaged in the thermally enhanced PowerPAK SO-8 surface-mount land pattern with a 1.07 mm profile. According to the manufacturer datasheet, the device delivers a maximum on-resistance of 9.6 mΩ at VGS=10 V, making it well-suited for high-current DC-DC and load-switching applications where conduction loss dominates. The -GE3 suffix indicates lead (Pb)-free and halogen-free compliance per IEC 61249-2-21. A power MOSFET is a voltage-controlled semiconductor switch whose on-state resistance (RDS(on)) and switching speed determine efficiency in synchronous rectification, load switching, and DC-DC converter roles. TrenchFET technology reduces cell pitch and lowers on-resistance per unit area compared with older planar structures, while the PowerPAK SO-8 lands directly on the standard SO-8 dual footprint with a much larger metal pad for heat extraction. Within the Vishay portfolio, this places the SI7460DP between small-signal SOT-23 FETs and larger DPAK/TO-220 parts targeted at higher-current or higher-voltage rails. Key features include a 60 V VDS rating with ±20 V VGS tolerance, 9.6 mΩ maximum RDS(on) at VGS=10 V, fast switching speeds optimized for SMPS stages, and a low 1.07 mm profile suitable for slim secondary-side synchronous-rectifier positions. The PowerPAK SO-8 provides substantially lower junction-to-ambient thermal resistance than a standard SO-8, typically allowing multi-amp operation without an external heatsink when placed on adequate copper. The device uses a TrenchFET® silicon gate structure combined with Vishay's PowerPAK SO-8 packaging to minimize both conduction and switching losses. The exposed-drain pad construction routes heat directly into the PCB copper, lowering thermal impedance in steady-state operation compared with a standard SO-8 dual. The combination is engineered for high-frequency SMPS, secondary-side synchronous rectification, and motor-drive low-side switches where board space is constrained. Typical applications include secondary-side synchronous rectification in isolated DC-DC converters, high-side and low-side switches in buck/boost converters, battery protection and load management in portable systems, and motor-drive half-bridges below 60 V. The 60 V rating provides margin above 24 V industrial rails and 48 V telecom buses. When designing with this part, verify that the load current derates properly across TA and that the PCB copper area is sized to maintain junction temperature below the 150 °C absolute maximum. Drive the gate with a 10 V gate-drive stage to achieve the lowest RDS(on) and minimize conduction loss. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and PCB-layout guidance derived from the manufacturer datasheet and reference designs.
SIRA18ADP-T1-GE3 - 30V N-Channel MOSFET | Vishay
The Vishay Intertechnology SIRA18ADP-T1-GE3 is a 30 V N-channel power MOSFET with 30.6 A rated drain current at the case temperature, 14.7 W rated power dissipation at the case, and a PowerPAK SO-8 surface-mount package. It uses TrenchFET Gen IV technology and is identified by the manufacturer as lead-free and halogen-free. A power MOSFET is a voltage-controlled semiconductor used as an electronic switch. In its off state, the device blocks the drain-to-source voltage; in its on state, it provides a low-resistance conducting path. This switching behavior places the SIRA18ADP-T1-GE3 within the discrete semiconductor hierarchy: N-channel MOSFET, power MOSFET, transistor, and semiconductor. Verified headline features include a 30 V drain-to-source rating, a 20 V gate-to-source rating, 30.6 A drain current at the case, and 14.7 W power dissipation at the case. The TrenchFET Gen IV process and 100% gate-resistance and UIS testing provide useful design context, while the lead-free and halogen-free construction supports environmentally constrained production requirements. The device is intended for compact, low-voltage switching circuits where the 30 V rating and PowerPAK SO-8 package are appropriate. Its voltage rating makes it relevant to 12 V and lower-voltage rails, although the exact operating limits for pulse, body-diode, avalanche, and layout conditions remain subject to the manufacturer datasheet. Potential uses include DC-DC converter switches, load switches, motor or solenoid drivers, battery-powered systems, and power-supply control stages. The MOSFET should be selected only after checking DC and switching losses, gate-drive voltage, current pulses, junction temperature, and the PCB copper available for heat dissipation. For reliable operation, use a gate driver that satisfies the device voltage and timing requirements, keep the power loop compact, and provide thermal copper around the PowerPAK SO-8 leads. This page combines verified manufacturer and distributor information with engineering-oriented selection and design guidance.
SKD75GAL123D - 1200V 75A CIB IGBT Brake Module | Semikron
The Semikron SKD75GAL123D is a 1200 V, 75 A converter-inverter-brake (CIB) style power module combining a three-phase bridge rectifier with brake chopper IGBT, housed in the SEMIBOX C isolated copper-baseplate package rated for 500 VAC input lines via 1400 V PIV glass-passivated input diodes. A power module such as this integrates multiple semiconductor dies on one Direct Copper Bonded (DCB) ceramic substrate, bridging the hierarchy from discrete IGBT to power module to complete power assembly. CIB modules consolidate the AC-DC front-end rectification and DC-link braking stage of a variable frequency drive into a single isolated footprint, reducing assembly steps, stray inductance, and creepage/clearance design burden. Key features include 1400 V PIV input diodes rated good for 500 VAC lines, a high I2t rating for inrush current survival, a latch-up-free homogeneous NPT silicon IGBT structure, and short-circuit capability self-limiting to 6 times Icnom. Fast and soft CAL freewheeling diodes minimize voltage overshoot and EMI during hard switching, while the DCB isolated copper baseplate provides reliable electrical isolation and low thermal resistance. The NPT (Non-Punch-Through) IGBT technology delivers low tail current with weak temperature dependence, enabling operation up to elevated junction temperatures with predictable switching energy. Round 2 mm main terminals allow easy PCB drilling or busbar attachment, and large creepage and clearance distances support industrial insulation coordination requirements. Typical applications include AC inverter drives for industrial motors, brake chopper stages in hoists and cranes, UPS front-ends, and Industry 4.0 automation equipment where uptime and front-end reliability are paramount. Design consideration: thermal interface material selection and baseplate flatness dominate junction-to-heatsink performance in SEMIBOX packages; verify Visol isolation test conditions per the manufacturer datasheet before qualification. This page synthesizes distributor availability data, drop-in same-family alternatives, and practical design notes not consolidated in the manufacturer datasheet.
SKD82/16 - 80A 1600V Bridge Rectifier | Semikron SEMIPONT 3
The Semikron SKD82/16 is a 3-phase power bridge rectifier from the SEMIPONT 3 family, rated for 80 A DC output current at a repetitive peak reverse voltage of 1600 V. Housed in an industry-standard screw-mount chassis module, the device integrates six rectifier diodes in a three-phase bridge configuration across five heavy-duty screw terminals, making it suitable for direct PCB bus-bar or chassis wiring. The junction operating range spans -40 C to +150 C, with a non-repetitive peak forward surge current of 750 A for inrush and short-circuit events. A power bridge rectifier is a discrete-semiconductor module that converts three-phase AC input into a single-polarity DC output by steering current through six rectifier legs. In the wider taxonomy, it sits within silicon power diodes, which are categorized as discrete semiconductors and serve as foundational building blocks of industrial power electronics - feeding variable frequency drives, battery chargers, DC motor fields, and front-end rectifier stages of switch-mode power supplies. Key electrical specifications include a maximum forward voltage of approximately 1.55 V per leg at rated current, a low thermal resistance junction-to-ambient of 1.8 K/W when mounted on a 250x250x1 mm painted metal heatsheet, and an isolated metal baseplate that simplifies chassis grounding and paralleling with neighboring modules. The module accepts standard M5 power terminals and M6 mounting bolts, simplifying mechanical integration into existing SEMIPONT 3 design footprints. The SKD82/16 uses a standard six-pulse three-phase uncontrolled bridge topology, which is the most rugged and cost-effective AC-to-DC conversion method for industrial loads. Its silicon rectifier dice are pressure-contacted to the copper baseplate rather than soldered, which improves thermal cycling endurance and enables higher surge-current tolerance than equivalent PCB-mount bridge assemblies. Typical applications include AC-to-DC front-end rectifiers for variable frequency drives (VFDs), input rectifier stages for industrial switch-mode power supplies, battery-charger power stages, and DC motor field-supply rectifiers. Its 1600 V rating comfortably covers 480 V AC and 600 V AC three-phase industrial bus inputs when derated per IEC 60146. When designing with the SKD82/16, ensure adequate heatsinking: at full 80 A load with a 1.55 V drop, the module dissipates approximately 124 W of conduction loss, and at 1.8 K/W the junction will sit well above ambient without a substantial heatsink. AC-line fuses sized to I^2t of the diode, plus an RC snubber across each leg, are recommended to limit dv/dt-induced reverse-recovery stress on the bridge. This page synthesizes distributor pricing, drop-in alternatives and practical design notes for the SKD82/16 not found in the manufacturer datasheet alone, including cross-brand SEMIPONT 3 family equivalents and paralleled-module thermal guidance.
SKM200GB125D - 200A/1200V Ultrafast IGBT Module | Semikron
The Semikron SKM200GB125D is an ultrafast dual N-channel IGBT power module rated at 200 A continuous collector current and 1200 V collector-emitter breakdown voltage, housed in a SEMITRANS 3 industrial package (Case D-56). It is designed as a half-bridge building block combining two IGBT switches with antiparallel diodes, intended for medium-power switching applications where high current handling, low conduction loss, and ruggedness against short-circuit events are required. An IGBT (Insulated-Gate Bipolar Transistor) is a semiconductor power switch that combines the high-input-impedance, voltage-driven gate of a MOSFET with the high-current-density, low-saturation-voltage characteristics of a bipolar transistor. Within the power-electronics device hierarchy, an IGBT sits between MOSFETs (better for low-voltage/high-frequency) and thyristors/SCRs (better for very high power AC rectification). Half-bridge IGBT modules like the SKM200GB125D belong to the broader family of power modules and are widely used as the switching stage in industrial motor drives, servo amplifiers, and uninterruptible power supplies. The SKM200GB125D is specified as an "Ultrafast" IGBT module, meaning its turn-off and turn-on transition times are optimized for switching frequencies in the 8 kHz to 25 kHz range typical of PWM inverter drives. The SEMITRANS 3 platform uses screw-mount baseplate construction with isolated substrate, eliminating the need for an external insulating washer and simplifying heatsink assembly. The module is panel-mountable and field-proven in industrial inverter designs. In typical use the SKM200GB125D operates as one half-bridge leg (high-side + low-side IGBT) feeding a 50/60 Hz sinusoidal-modulated PWM output. Because the device integrates both IGBT transistors and their freewheeling diodes in one package, PCB parasitics and bus-bar inductance are minimized compared with discrete designs, and the thermal path is improved via the baseplate. Designers favor SEMITRANS 3 modules for printing-machine drives, welding inverters, solar inverters, and general-purpose three-phase IGBT bridges. Mounted to an appropriately sized heatsink with proper thermal compound and isolated clamping hardware, the SKM200GB125D handles the 200 A continuous rating comfortably in continuous industrial duty, and can briefly sustain pulsed loads well above rated current for motor-start or short-circuit-clearance events. Care must be taken to provide sufficient DC-link capacitance, gate-drive optocoupler isolation, and short-circuit protection (DESAT detection) to fully exploit the module's switching performance. This page synthesizes distributor pricing and stock data, drop-in SEMIKRON and cross-brand replacement part numbers, and practical heatsink / gate-drive design considerations not covered in the manufacturer datasheet alone.
SKM400GB12E4 - 400A 1200V Half-Bridge IGBT Module | Semikron Danfoss
The Semikron Danfoss SKM400GB12E4 is a 400A 1200V half-bridge (dual) IGBT power module in the SEMITRANS 3 housing, built on 4th-generation medium-fast trench IGBT4 technology (Infineon chip) with CAL4 soft-switching freewheeling diodes on Direct Bonded Copper (DBC) substrate. An IGBT power module is a semiconductor assembly that integrates insulated-gate bipolar transistors and their antiparallel freewheeling diodes onto a common isolated baseplate, forming the switching core of voltage regulators and motor-drive inverters within the broader power management hierarchy. Half-bridge topology is the fundamental building block of H-bridges, three-phase inverters, and buck/boost converters. Key features include a collector-emitter voltage of 1200V, a nominal DC current of 400A, and pulsed collector current (ICRM) of 3x ICnom. The IGBT4 trench chipset provides VCEsat with a positive temperature coefficient, enabling straightforward paralleling of modules. The module offers high short-circuit capability with self-limiting at 6x ICnom, a critical ruggedness parameter for industrial drive environments. Technically, the CAL4 diode exhibits soft-recovery switching behavior that reduces voltage overshoot during diode turn-off, lowering EMI and stress on companion switches. DBC ceramic insulation provides the isolation between silicon and baseplate required for 1200V-class designs, while the solder-bond construction targets high power cycling lifetime in traction and drive duty. Typical applications include variable-frequency AC drives, wind power converters, uninterruptible power supplies, and electric traction inverters operating from DC bus voltages around 800V. When designing, ensure gate drive is limited within the ±15V VGE window, size the heatsink for the VCEsat-related conduction losses, and observe the creepage/clearance of the SEMITRANS 3 housing. This page synthesizes distributor sourcing data, verified drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
SKM75GB12T4 - 1200V 115A Half-Bridge IGBT4 Module | Semikron
The Semikron Danfoss SKM75GB12T4 is a fast half-bridge (dual) IGBT power module rated 1200 V collector-emitter voltage with 115 A continuous collector current (75 A nominal) in the 7-pin SEMITRANS 2 package (Case GB). It combines 4th-generation fast trench IGBT4 chips (Infineon) with CAL4 soft-recovery freewheeling diodes. An IGBT module is an insulated-gate bipolar transistor assembly that integrates one or more power switching devices and freewheeling diodes on an isolated DCB ceramic substrate inside a molded housing. IGBT modules sit at the top of the power semiconductor hierarchy: IGBT -> power transistor -> power semiconductor -> power conversion system. They serve as the switching core of inverters, motor drives, UPS systems, and welders, where high blocking voltage and galvanic isolation from the heatsink are mandatory. Key features include the IGBT4 fast trench-generation die, which balances low VCE(sat) with reduced turn-off energy for switching frequencies typical of industrial drives, and the CAL4 diode with soft recovery behavior that reduces voltage overshoot and EMI during commutation. The SEMITRANS 2 housing provides 3600 Vrms-class isolation, a solderable or screw-terminal layout (7-pin Case GB), and a flat baseplate for mounting on standard heatsinks. The half-bridge topology directly supports buck, boost, and PWM inverter legs. Technically, the module is ESD-sensitive per IEC 60747-1 Chapter IX, and the datasheet is a 5-page manufacturer document covering static and dynamic characteristics, diode recovery data, and mechanical drawings. Typical applications include AC motor drives and inverters, UPS output stages, welding power supplies, and industrial SMPS front ends operating from rectified 3-phase 400 V AC mains, where the 1200 V class provides sufficient margin. A key design consideration is thermal management: dissipation is the sum of conduction and switching losses, so heatsink selection must reflect the actual PWM frequency and duty cycle using the datasheet loss curves. This page synthesizes distributor availability, verified cross-reference alternatives, and practical design guidance beyond the manufacturer datasheet.
SL10 10003 - 10 Ohm 3A NTC Inrush Limiter | Ametherm
The Ametherm SL10 10003 is a 10 ohm, 3 A inrush current limiter (ICL) based on a negative temperature coefficient (NTC) disc thermistor, housed in a through-hole disc package with 0.8 mm nominal leads. Its headline ratings are a 25 degree C zero-power resistance of 10 ohm plus or minus 20 percent, a maximum steady-state current of 3 A up to 65 degree C, and a maximum recommended inrush energy rating of 17 J (with an actual failure instantaneous energy of 35 J). The SL10 10003 is specifically engineered to suppress the capacitor-charging current surge that occurs when AC or DC power supplies are first turned on, protecting downstream rectifiers, MOSFETs, and bulk capacitors from nuisance tripping, contact welding, and lifetime degradation. According to the manufacturer datasheet, the device cools the resistance-versus-current profile: at 100 percent of the maximum steady-state current, R drops to 0.26 ohm, and at 50 percent of the maximum current, R drops to 0.57 ohm, allowing the limiter to self-stabilize while still limiting the initial cold-resistance spike during turn-on. An inrush current limiter is a passive component whose resistance decreases as its body temperature rises due to I-squared-R self-heating. By placing the ICL in series with the line input of a power supply, the limiter presents its full 10 ohm cold resistance at power-on, slowing the rise of current into the bulk filter capacitor, then dropping to a low steady-state resistance as it warms up. This category sits within the broader hierarchy of surge protection -> circuit protection -> discrete semiconductors -> passives, and is commonly selected over active MOSFET-based circuits for its simplicity, zero quiescent loss, and immunity to control-loop faults. Key features of the SL10 10003 include CSA and UL approvals, a thermal time constant of 30 seconds, a dissipation constant of 11.0 mW per degree C, and a body temperature at 100 percent max current of 151 degree C. The SL10 10003 ships in 10 mm disc form factor with 0.8 mm nominal lead diameter, an industry-standard through-hole footprint compatible with lead-forming and PC-mount standoffs. Its SL10 series designation indicates the standard 10 mm disc geometry used across the Ametherm SL10 family. According to the manufacturer datasheet, the device is constructed with C material type only (D parameter 10.0 max, T parameter 5.0 max). Typical applications include switch-mode power supply input stages, motor soft-start circuits, UPS input protection, and audio amplifier power supply rails. The wide 17 J energy rating covers most sub-1 kW SMPS inrush events, while the 0.26 ohm steady-state resistance keeps continuous dissipation below 2.4 W at full load. When designing with this part, mount the device in a location with adequate airflow because body temperature at full current approaches 151 degree C and a sealed enclosure will derate the maximum continuous current significantly below the 3 A rating. CSA/UL recognition also simplifies agency submission for end products sold in North America. This page synthesizes distributor pricing, parameter-by-parameter alternative comparison, and practical design notes that are not collected in any single source, including thermal derating curves, drop-in replacement candidates, and a comparison to MOSFET-based active inrush circuits.
SL1200 - 12kV 40mA Fast Recovery Rectifier Diode | EDI
The Electronic Devices Inc. (EDI) SL1200 is a high-voltage, fast-recovery miniature rectifier diode rated for a peak reverse voltage (PRV) of 12,000 V and an average rectified forward current of 40 mA, with a fast recovery time of 100 ns in a small-size molded 2-pin package with minimum 1-inch leads. A high-voltage rectifier diode is a discrete semiconductor that permits current flow in one direction while blocking very large reverse voltages, converting AC to DC in the final stage of the power-conversion hierarchy (rectifier diode -> discrete semiconductor -> power conversion system). High-voltage rectifiers like the SL1200 are engineered specifically to withstand thousands of volts of reverse stress, unlike general-purpose rectifiers rated at a few hundred volts. Key features of the SL1200 include its 12 kV peak reverse voltage rating, which eliminates the need to series-stack multiple lower-voltage diodes; its 100 ns fast recovery characteristic, which reduces switching losses in high-frequency operation; avalanche characteristics that absorb transient over-voltage events without destructive failure; and low reverse leakage current, which improves efficiency and thermal stability in high-impedance circuits. Technically, the SL1200 uses a molded small-size package construction with a minimum lead length of 1 inch, which provides the creepage and clearance distance required to support its 12 kV blocking voltage in compact assemblies. The avalanche capability means the die can clamp limited reverse transient energy internally, adding robustness in flyback and multipliers where spikes are common. Typical applications include high-voltage DC power supplies, voltage multipliers (Cockcroft-Walton ladders), CRT and X-ray equipment bias supplies, electrostatic precipitators, photomultiplier tube supplies, and laser or ion-source high-tension circuits. Design consideration: because reverse leakage doubles roughly every 10 C, derate the 12 kV PRV in high-temperature environments and ensure the 1-inch minimum lead spacing is preserved on the PCB to maintain high-voltage isolation. This page synthesizes distributor availability, alternative-sourcing guidance, and practical high-voltage layout notes not found in the short manufacturer datasheet.
SM15T10AY - 1500W TVS Diode, 10V Standoff | STMicroelectronics
The SM15T10AY is a 1500W transient voltage suppression (TVS) diode from STMicroelectronics, designed to protect sensitive electronic circuits from voltage transients induced by lightning, inductive load switching, and electrostatic discharge (ESD). It features a standoff voltage of 10V (working peak reverse voltage) and a breakdown voltage range of 11.1V to 12.3V at 1mA test current. The device is housed in the SMC (DO-214AB) package, a surface-mount package with a compact footprint suitable for high-density PCB designs. A TVS diode is a clamping device that, when exposed to a transient voltage exceeding its breakdown voltage, conducts high current to clamp the voltage to a safe level, thereby protecting downstream components. TVS diodes are essential in power supply inputs, communication lines, and automotive electronics where transient surges are common. They are part of the broader category of circuit protection devices, which also includes varistors, gas discharge tubes, and ESD suppressors. Key features of the SM15T10AY include a peak pulse power dissipation of 1500W (10/1000us waveform), a maximum clamping voltage of 18.6V at 83A peak pulse current, and a low leakage current of 200uA at the standoff voltage. The device operates over a junction temperature range of -55C to +150C, making it suitable for harsh environments. It is RoHS compliant and halogen-free, meeting modern environmental standards. The SM15T10AY utilizes a silicon avalanche diode structure, providing fast response times (typically less than 1ns) and high surge capability. The SMC package offers excellent thermal performance, with a thermal resistance of 15C/W (junction to lead), enabling efficient heat dissipation during surge events. The device is AEC-Q101 qualified, making it suitable for automotive applications where reliability under extreme conditions is critical. Typical applications include automotive electronic control units (ECUs), industrial power supplies, telecom equipment, and consumer electronics. In automotive systems, the SM15T10AY protects sensitive microcontrollers and sensors from load-dump transients and ESD. In industrial power supplies, it safeguards rectifier circuits and DC-DC converters from lightning-induced surges. When designing with the SM15T10AY, ensure adequate PCB copper area for heat dissipation during surge events. The device should be placed as close as possible to the protected component or connector to minimize parasitic inductance. For high-reliability designs, consider derating the peak pulse power at elevated ambient temperatures.
SM15T56AY - 56V 1500W TVS Diode | STMicroelectronics | Automotive
The SM15T56AY is a 1500W transient voltage suppression (TVS) diode from STMicroelectronics, designed to protect sensitive electronic circuits from voltage transients induced by lightning, inductive load switching, and electrostatic discharge (ESD). It features a standoff voltage of 56V (working peak reverse voltage) and a breakdown voltage range of 62.2V to 68.8V at 1mA test current. The device clamps transient overvoltages to a maximum clamping voltage of 100V at a peak pulse current of 15.4A (for a 10/1000μs waveform), ensuring downstream components remain within safe operating limits. A TVS diode is a semiconductor device that responds to overvoltage conditions by entering avalanche breakdown, shunting excess current to ground and clamping the voltage to a safe level. TVS diodes are essential in power management and circuit protection hierarchies, sitting between the external threat (ESD, surge) and the sensitive load (ICs, microcontrollers). They are categorized under transient voltage suppressors, which are a subset of protection diodes within the broader family of discrete semiconductors. The SM15T56AY is part of the SM15T series, which offers peak pulse power ratings from 600W to 1500W, with the 'A' suffix indicating a unidirectional (single-direction) device. Key features include a peak pulse power dissipation of 1500W (10/1000μs), a fast response time of less than 1 picosecond (theoretical), and a low leakage current of 5μA maximum at the standoff voltage. The device is housed in a compact SMC (DO-214AB) package, which is surface-mountable and provides excellent thermal performance. The SM15T56AY is AEC-Q101 qualified, making it suitable for automotive applications where reliability under harsh conditions is critical. It also meets RoHS and REACH compliance standards, ensuring environmental friendliness. Technically, the SM15T56AY uses a planar epitaxial silicon structure that provides precise breakdown voltage control and high surge capability. The device's clamping behavior is characterized by its dynamic resistance, which is low enough to minimize voltage overshoot during fast transients. The unidirectional configuration is ideal for DC power rails where the voltage is always positive with respect to ground, offering a single clamping direction and lower clamping voltage compared to bidirectional devices. Typical applications include automotive electronic control units (ECUs), industrial power supplies, telecommunications equipment, and consumer electronics. In automotive systems, the SM15T56AY protects 12V and 24V battery lines from load-dump transients and inductive spikes. In industrial settings, it safeguards PLCs and motor drives from surge events. The device's high surge capability and fast response make it a preferred choice for protecting power input stages. When designing with the SM15T56AY, ensure the standoff voltage (56V) is higher than the maximum steady-state operating voltage of the protected line to avoid unnecessary clamping during normal operation. Place the TVS diode as close as possible to the protected component or connector to minimize parasitic inductance, which can degrade clamping performance. Proper PCB layout with short, wide traces to the TVS and a solid ground plane is essential for optimal transient suppression.
SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower
The Sinopower Semiconductor SM4036NHKP is an N-Channel Enhancement Mode Power MOSFET rated at 40V VDS and 80A continuous drain current, housed in a PDFN-8 (also called DFN5x6) surface-mount package. It is designed for high-efficiency switching applications including DC-DC converters, motor control, and load switching in industrial and consumer power systems. An N-Channel Enhancement Mode MOSFET is a voltage-controlled semiconductor device in which a positive gate-to-source voltage creates an inversion layer (channel) that allows electron current to flow from drain to source. The 'enhancement' designation means the channel does not conduct at VGS=0 and must be enhanced by the gate bias. MOSFETs are the workhorse of modern power electronics because they switch at high speed, require minimal drive current, and exhibit low on-resistance (RDS(on)). N-Channel devices (carrying electron current) offer lower RDS(on) per unit silicon than P-Channel devices, making them the preferred choice in high-current, low-loss applications. N-Channel MOSFETs belong to the broader category of power MOSFETs, which sit under discrete semiconductors and serve as the switching element in nearly every power conversion topology. Key features of the SM4036NHKP include very low on-resistance that minimizes conduction losses, fast switching speeds that reduce switching losses, and a 40V breakdown voltage suited to 12V and 24V bus rails. The PDFN-8 package exposes a large drain pad to the PCB, providing excellent thermal dissipation and enabling high continuous currents in a compact 5mm x 6mm footprint. Marking code '4036NH' on the device top allows easy identification after board assembly. Internally, the SM4036NHKP uses Sinopower's proprietary trench MOSFET cell technology, which maximizes cell density and minimizes RDS(on) per unit area. The device is fully characterized for avalanche operation, providing ruggedness against unclamped inductive switching events commonly seen in motor and solenoid drive circuits. Typical applications include high-current DC-DC buck and boost converters, brushless DC (BLDC) motor drives, battery protection circuits in power tools and e-bikes, and OR-ing / hot-swap switches in telecom and server power distribution units. When designing with the SM4036NHKP, ensure the gate drive voltage reaches at least 10V to fully enhance the channel and achieve the rated low on-resistance. Use a gate resistor of 10-100 ohm to control switching transients and minimize ringing. The exposed drain pad must be soldered to a sufficient copper pour for thermal relief. This page combines distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SM4T33A - 33V 400W TRANSIL TVS Diode | STMicroelectronics
The STMicroelectronics SM4T33A is a 33V unidirectional TRANSIL transient voltage suppressor (TVS) diode rated for 400W peak pulse power dissipation on a 1ms exponential waveform, packaged in the surface-mount SMA (DO-214AC) outline. It belongs to ST's SM4T series, which is JEDEC-registered and designed for high-overvoltage protection by clamping action in sensitive electronics. A TRANSIL is a specific class of avalanche TVS diode whose role is to clamp transient overvoltages (ESD, inductive load switching, lightning-induced surges) to a safe level, protecting downstream semiconductors. TVS diodes sit within the broader protection-component hierarchy of surge protectors, which themselves fall under discrete semiconductors used in power management and interface protection. SM4T-series parts are positioned as general-purpose surface-mount TVS diodes with a low clamping factor and a fast response time, intermediate in power handling between SMA-packaged 400W parts and larger SMB/SMC 1000W-1500W parts. Key electrical features of the SM4T33A include a stand-off voltage (VWM) of 33V, a minimum breakdown voltage (VBR min) around 36.7V, a maximum clamping voltage (VC) of approximately 53.3V at IPP, and a peak pulse current handling compatible with the 400W/1ms rating. The device is offered in unidirectional (-A suffix) and bidirectional (-CA suffix) variants, providing flexibility for DC rail protection and AC line protection respectively. The low clamping factor minimizes the voltage excursion seen by protected circuitry during a transient event. Architecturally, the SM4T33A uses a silicon pn-junction avalanche structure optimized for fast turn-on (typically sub-nanosecond response), and the SMA package's C-bend terminations provide a robust solder joint capable of withstanding the thermal stress of repeated surge events. Maximum junction temperature is 150C with operating range typically -55C to +150C (per the SMA TRANSIL datasheet family). Typical applications include DC power rail protection in 24V industrial systems, protection of microcontroller I/O pins, secondary protection on telecom line interfaces, USB and CAN bus protection, and general ESD/surge protection on PCB signal lines exposed to external cables. The unidirectional polarity suits DC rails, while bidirectional variants suit AC or signal-line applications. When designing with the SM4T33A, ensure the working voltage is below VWM and that the protected device's maximum rating exceeds VC. Place the TVS as close as possible to the entry point of the transient, with short, wide PCB traces to minimize parasitic inductance that would otherwise let voltage overshoot during fast-edge transients. This page synthesizes distributor pricing, drop-in SMA-package alternatives, and practical PCB-layout design notes not collected in the manufacturer datasheet alone, giving the engineer a single reference for sourcing and design-in decisions.
SM6T250CAY - 250V 600W TVS Diode | STMicroelectronics
The SM6T250CAY is a bidirectional transient voltage suppression (TVS) diode from STMicroelectronics, designed to protect sensitive electronic circuits from voltage transients induced by lightning, inductive load switching, and electrostatic discharge (ESD). It offers a standoff voltage of 250V and a peak pulse power dissipation of 600W (10/1000µs waveform), making it suitable for industrial, automotive, and telecom applications. The device is available in the compact SMB (DO-214AA) surface-mount package, which is widely used for board-level protection. A TVS diode is a clamping device that limits voltage spikes to a safe level by entering avalanche breakdown when the voltage across it exceeds its breakdown voltage. It is a type of voltage suppressor, which falls under the broader category of circuit protection components. TVS diodes are essential in protecting integrated circuits, power supplies, and communication lines from overvoltage events that could otherwise cause permanent damage. Key features of the SM6T250CAY include a working peak reverse voltage (VRWM) of 250V, a minimum breakdown voltage (VBR) of 285V, and a maximum clamping voltage (VC) of 417V at the peak pulse current (IPP) of 14.4A. The device has a low leakage current of 5µA at VRWM, ensuring minimal power loss in standby. It also features a fast response time of less than 1ns, which is critical for protecting high-speed data lines. The SMB package offers a compact footprint with a height of only 2.44mm, making it suitable for space-constrained designs. The SM6T250CAY is fabricated using STMicroelectronics' planar technology, which ensures precise voltage control and high reliability. The device is AEC-Q101 qualified, making it suitable for automotive applications where reliability under harsh conditions is paramount. It also complies with RoHS and REACH directives, ensuring environmental friendliness. The bidirectional configuration allows it to clamp both positive and negative transients, making it ideal for AC lines and applications where the polarity of the transient is unknown. Typical applications include automotive electronic control units (ECUs), industrial automation equipment, telecom infrastructure, and power supply protection. In automotive systems, the SM6T250CAY protects against load dump transients and ESD events, ensuring the longevity of sensitive electronics. In industrial settings, it safeguards PLCs and motor drives from inductive spikes. For telecom, it protects line cards and communication interfaces from lightning-induced surges. When designing with the SM6T250CAY, ensure that the standoff voltage (250V) is higher than the maximum operating voltage of the protected line to avoid unnecessary clamping. Also, consider the peak pulse power rating (600W) and derate it based on the operating temperature. Proper PCB layout with short, low-inductance traces is essential to minimize parasitic effects and ensure effective clamping.
SMA4F5.0AY - 5.0V TVS Diode, SMA Flat Package | STMicroelectronics
The SMA4F5.0AY is a 5.0V unidirectional Transient Voltage Suppression (TVS) diode from STMicroelectronics, designed to protect sensitive electronic circuits from voltage transients induced by lightning, inductive load switching, and electrostatic discharge (ESD). It is housed in a compact SMA flat package (SMAflat), which offers a low-profile, surface-mount solution with excellent power dissipation capability. The device provides a standoff voltage of 5.0V and a breakdown voltage range of 6.4V to 7.0V, ensuring robust clamping performance for low-voltage applications. A TVS diode is a semiconductor device that clamps transient voltages to a safe level by entering avalanche breakdown when the voltage exceeds its breakdown voltage. It is a critical component in circuit protection, acting as a voltage clamp that diverts excess energy away from sensitive ICs, microcontrollers, and communication interfaces. TVS diodes are part of the broader category of circuit protection devices, which also include varistors, ESD suppressors, and gas discharge tubes. In the system hierarchy, a TVS diode is a fundamental building block in the protection layer of electronic systems, working alongside fuses and current limiters to ensure reliability and safety. Key features of the SMA4F5.0AY include a peak pulse power dissipation of 400W (10/1000µs waveform), a low clamping factor, and a fast response time of less than 1ns. The device operates over a wide temperature range of -55°C to +150°C, making it suitable for harsh environments. Its SMAflat package is designed for automated assembly, with a height of only 1.0mm, ideal for space-constrained applications. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Technically, the SMA4F5.0AY utilizes a planar epitaxial structure that ensures low leakage current and high surge capability. The device's clamping voltage at peak pulse current is typically 9.2V, providing effective protection for 5V logic and power rails. The TVS diode's bidirectional or unidirectional configuration is determined by the application; the SMA4F5.0AY is unidirectional, making it suitable for DC power lines and signal lines where the voltage is always positive. Typical applications include protection of power supply inputs, I/O ports, and communication lines in consumer electronics, industrial control systems, automotive electronics, and telecommunications equipment. For example, in a USB power port, the SMA4F5.0AY can be placed across the VBUS line to clamp ESD events, ensuring the downstream controller remains undamaged. When designing with this device, it is essential to place the TVS diode as close as possible to the protected connector or IC to minimize parasitic inductance. Additionally, the PCB layout should include a low-impedance ground path to ensure effective clamping. The device's standoff voltage should be higher than the maximum operating voltage of the protected line to avoid unnecessary conduction during normal operation.
SMA6J43CA - 600W Bidirectional TVS Diode 43V | Littelfuse
The Littelfuse SMA6J43CA is a 600 W bidirectional transient voltage suppressor (TVS) diode with a 43 V reverse standoff voltage, 47.7 V minimum breakdown voltage, and 69.4 V maximum clamping voltage at 8.7 A peak pulse current, housed in a DO-214AC (SMA) surface-mount package. A TVS diode is a silicon avalanche protection device clamped in parallel with the circuit it protects. Within the power-management hierarchy, it belongs to the surge protector family alongside varistors and gas discharge tubes; unlike MOVs, silicon TVS diodes respond in picoseconds with tightly controlled clamping voltages, making them the preferred choice for protecting sensitive semiconductors from electrostatic discharge (ESD), inductive load switching, and lightning-induced transients. Key features include the 600 W peak pulse power rating (10/1000 us waveform), bidirectional polarity that blocks and clamps in both directions, 5% breakdown voltage tolerance, and a steady-state power dissipation of 5.0 W. The glass-passivated junction ensures long-term reliability, and the response time is typically less than 1.0 ns, fast enough to intercept ESD events per IEC 61000-4-2 type threats. The SMA6J43CA uses a planar, glass-passivated avalanche junction structure. Its bidirectional construction consists of two avalanche junctions in series-opposed configuration, giving symmetric clamping at 69.4 V for both positive and negative surge events - important for AC lines, symmetric signal pairs, and circuits that see reverse transients. Typical applications include automotive 42 V rail transient protection, industrial 24-36 V DC bus clamping, telecom line cards, and surge protection on power input stages of motor drives and power supplies. The 43 V standoff accommodates nominal 36-40 V rails with margin. Design consideration: at 8.7 A peak, the package must dissipate the surge energy into copper - provide at least adequate PCB copper area on both SMA terminals. Remember the bidirectional CA suffix means leakage flows in both directions; use the unidirectional SMA6J43A for DC rails where a clamping diode forward drop is acceptable. This page synthesizes verified distributor data, drop-in cross-brand alternatives, and practical design notes not found in the manufacturer datasheet.
SMA6J43CA-Q - 600W 43V Bidirectional TVS Diode | Bourns
The Bourns SMA6J43CA-Q is a 600 W bidirectional transient voltage suppressor (TVS) diode with a 43 V working standoff voltage, 69.4 V max clamping voltage, and 8.7 A peak pulse current capability, housed in a surface-mount DO-214AC (SMA) package. The -Q suffix denotes AEC-Q101 qualification for automotive-grade reliability. A transient voltage suppressor diode is a circuit-protection semiconductor designed to clamp fast voltage transients, such as those caused by inductive load switching, lightning-induced surges, and electrostatic discharge (ESD). TVS diodes sit within the broader voltage-suppression hierarchy that spans varistors, gas discharge tubes, and TVS thyristors. When a transient exceeds the breakdown voltage, the TVS avalanches within nanoseconds and diverts surge current to ground, clamping the protected rail to a safe level. Key features of the SMA6J43CA-Q include 600 W peak pulse power per the 10/1000 us waveform, 5% breakdown voltage tolerance, bidirectional polarity for AC lines and symmetric signal protection, and a glass-passivated junction for long-term stability. The SMA package supports surface-mount reflow assembly and roughly 5.0 W steady-state power dissipation. The SMA6J-Q series is specified for voltage transient and ESD protection in data lines and DC power supplies. Typical applications include automotive 24 V and 42 V rail protection, industrial DC bus clamping, telecom line cards, and surge protection at power input connectors of harsh-environment equipment. When designing with this device, remember that the 43 V standoff means the diode begins conducting near 47.8 V minimum breakdown; downstream circuits must tolerate the 69.4 V worst-case clamp at full 8.7 A surge. Ground-path inductance must be minimized so the clamp voltage is not inflated during fast transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SMA6S18CAH - 18V Bi-Directional 600W TVS Diode | TSC
The Taiwan Semiconductor Corporation SMA6S18CAH is a 600 W bi-directional Transient Voltage Suppressor (TVS) diode rated for an 18 V working standoff voltage, packaged in the compact surface-mount SOD-128 case. Designed to clamp fast transient events such as ESD surges, inductive load switching, and lightning-induced transients, the device offers a peak pulse current capability of 20.5 A (Ipp) and a maximum clamping voltage of 29.2 V at that current. A Transient Voltage Suppressor is a specialized PN-junction diode optimized for avalanche breakdown operation. Under normal circuit conditions the TVS diode presents a high impedance and is effectively invisible to the signal or supply rail it protects. When the voltage across the device exceeds its breakdown (avalanche) voltage, the TVS diode conducts heavily and shunts the transient energy away from sensitive downstream components. Bi-directional TVS diodes such as the SMA6S18CAH clamp both positive and negative transients symmetrically, making them ideal for AC-coupled signal lines, differential data pairs, and DC supply rails where the polarity of the disturbance is undefined. Key electrical characteristics include a stand-off voltage (Vrwm) of 18 V, breakdown voltage (Vbr) typically 20 V, and a clamping voltage (Vc) of 29.2 V at 20.5 A peak pulse current. The 600 W peak pulse power rating is specified at a 10/1000 microsecond waveform per industry-standard TVS test methods. The device is housed in a SOD-128 (also known as SMA-flat) low-profile surface-mount package that is pin-compatible with the industry-standard SMA footprint, enabling direct substitution on existing PCB land patterns. Typical applications include protection of 12 V or 15 V DC power rails in industrial control systems, automotive electronic control units (ECUs), USB and HDMI data-line protection, and protection of signal lines on factory automation buses such as RS-485 and CAN. The fast response time (sub-nanosecond avalanche) makes the SMA6S18CAH well-suited for safeguarding microcontroller I/O pins and sensor interfaces from electrostatic discharge events. When designing with this device, ensure the working standoff voltage (Vrwm) exceeds the maximum continuous operating voltage of the protected line, and select a clamping voltage (Vc) safely below the absolute maximum rating of the downstream component. PCB layout should minimize parasitic inductance between the TVS diode and the protected line, with short, wide traces to the ground plane to ensure effective transient energy dissipation.
SMBJ15CA - 600W Bidirectional TVS Diode, 15V, DO-214AA | SMBJ Series
The Littelfuse SMBJ15CA is a 600W peak-pulse-power bidirectional Transient Voltage Suppressor (TVS) diode housed in a surface-mount DO-214AA (SMB) package. Designed for bipolar operation, it offers a working standoff voltage of 15.0V, a breakdown voltage of approximately 16.7V, and a maximum clamping voltage of 24.4V at a peak pulse current of 24.6A (10/1000 µs waveform). The 'C' suffix denotes bidirectional construction, allowing it to clamp transients of either polarity across the protected line. A TVS diode is a clamping semiconductor device that protects sensitive downstream electronics by absorbing high-energy voltage transients (such as those induced by lightning, ESD, inductive load switching, or relay kickback) and shunting the surge current to ground. Within the broader component taxonomy, a TVS diode is a sub-category of surge protection devices, which fall under the discrete semiconductor family. TVS diodes complement, but do not replace, over-current protection: they react in nanoseconds and are the fastest solid-state surge clamp available, far faster than MOVs or GDTs. Key features include 600W peak pulse power (10/1000 µs), 24.6A peak pulse current, a tight ±5% breakdown tolerance, low incremental surge resistance, and a robust glass-passivated die construction. The DO-214AA package offers an industry-standard SMB footprint compatible with all major second-source suppliers, including Vishay, STMicroelectronics, Diodes Incorporated, Micro Commercial Components (MCC), Microchip, and Bourns. Technically, the SMBJ15CA is built on a junction-passivated PN structure optimized for fast avalanche breakdown. Its response time is sub-nanosecond, and its clamping ratio (Vc/Vbr) of approximately 1.46 reflects the device's low dynamic impedance during a surge event. The bidirectional design eliminates the need for orientation on the PCB, simplifying assembly. Typical applications include 12V/15V rail protection in industrial control systems, DC power supply outputs exposed to load dump transients, telecom line protection, USB and CAN bus protection, sensor input clamping, and secondary protection downstream of GDTs or PTCs. When designing with this device, ensure the trace width to the SMB pads can carry the rated peak pulse current (24.6A) and that the PCB thermal mass keeps the junction temperature within rated limits during repeated surge events. Pair with an upstream fuse or PTC for over-current coordination. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not consolidated in any single manufacturer datasheet.