MOSFETs
Produits (1287)
2N7000TA - 60V 200mA N-Channel Small-Signal MOSFET | onsemi
The onsemi 2N7000TA is an N-channel enhancement-mode small-signal MOSFET rated 60 V VDS and 200 mA continuous drain current (at TC), produced using onsemi's proprietary high cell-density DMOS technology. It is offered in a TO-92-3 through-hole package with 400 mW power dissipation (Ta), making it a direct drop-in for the legacy JEDEC TO-92 2N7000 footprint used in millions of hobbyist and industrial designs. A small-signal MOSFET is a low-power field-effect transistor designed primarily for switching and amplification of analog or digital signals below roughly 1 A, rather than for power conversion. In the broader taxonomy, the 2N7000TA sits within discrete semiconductors -> MOSFETs -> small-signal MOSFETs -> N-channel enhancement-mode MOSFETs. Its standard JEDEC registration as "2N7000" reflects decades of cross-vendor second-source availability. Key features include a typical on-resistance of approximately 5 ohm at VGS = 10 V (per the onsemi datasheet), a gate threshold voltage VGS(th) typically 1.7 V (min 0.8 V, max 3 V), and fast switching times suitable for low-side switching of relays, LEDs, and small motors. The DMOS process minimises conduction loss while preserving ruggedness and switching speed, and the device is RoHS compliant in lead-free TO-92 form. From an architectural standpoint, the 2N7000TA uses a vertical DMOS cell layout that achieves low specific on-resistance per unit silicon area relative to older planar MOSFET processes. The result is a single-device solution that delivers low gate charge and low input capacitance for fast edges, even when driven directly from a 5 V microcontroller GPIO. Typical applications include microcontroller GPIO low-side switching of relays and solenoids, level shifters, LED drivers and indicators, signal gating and multiplexing, hobbyist robotics, and small DC motor speed control. The 200 mA continuous rating covers the vast majority of 5 V logic-level interfaces. The TO-92 package is breadboard-friendly and hand-solderable. When designing with this part, note that continuous DC drain current is limited to 200 mA at TC; at 25 C ambient with no heatsink, derate to roughly 115 mA continuous. For higher currents, use the SMD cousin 2N7002 (SOT-23) or upgrade to a logic-level power MOSFET such as AO3400. This page synthesises distributor pricing, drop-in alternatives, and practical design notes that are not consolidated in any single manufacturer datasheet, making it faster to choose, source, and design in the 2N7000TA.
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
The Diodes Incorporated 2N7002-7-F is a 60 V N-channel enhancement-mode Field Effect Transistor in a SOT-23-3 surface-mount package, designed for low-voltage, low-current switching applications. It supports a continuous drain current of 115 mA (Ta) at 370 mW (Ta) power dissipation, with a maximum drain-source voltage VDS of 60 V and a typical on-resistance RDS(on) ranging from 7.5 ohm to 13.5 ohm depending on gate drive conditions. An N-channel enhancement-mode MOSFET is a voltage-controlled device in which a positive gate-source voltage (above the threshold, typically around 1.0 V to 2.5 V for the 2N7002 family) creates a conducting inversion layer in the channel between drain and source. The 2N7002 sits within the broader MOSFET family (enhancement-mode -> N-channel -> small-signal MOSFET -> discrete transistor -> semiconductor), serving as a low-power, logic-level switch used as a building block in digital-interface analog and mixed-signal designs. Key features of the 2N7002-7-F include a low on-resistance for its class (typically ~7.5 ohm at VGS = 10 V), gate-source breakdown rated at +/-20 V, low gate leakage, and fast switching characteristics suitable for level shifters, load switches, and relay drivers. The SOT-23-3 footprint makes it the de-facto industry-standard small-signal N-MOSFET, with pin-compatible second sources from multiple manufacturers. The 2N7002-7-F uses an advanced trench MOSFET structure that delivers a low threshold voltage and tight RDS(on) distribution. Its small gate charge Qg enables fast turn-on/turn-off transitions at logic-level drive, which is critical when the device is used to translate between a 3.3 V microcontroller GPIO and a higher-voltage peripheral such as a 12 V relay coil or LED string. Typical applications include logic-level translation, low-side load switching, battery-pack protection circuits, signal multiplexing, and discrete driver stages for relays, solenoids, LEDs, and small fans. The 60 V VDS rating also makes it suitable as a protection element on 12 V/24 V buses. When designing with the 2N7002-7-F, drive the gate with at least 4.5 V to fully enhance the channel and achieve the lowest RDS(on); at 3.3 V drive the device may be only partially on. Always observe the +/-20 V VGS absolute maximum and include a gate-source resistor to prevent floating-gate turn-on in noisy environments. This page synthesizes distributor pricing, drop-in alternatives in the same SOT-23 footprint, and practical design notes that go beyond what the manufacturer datasheet alone provides, so that engineers can select and second-source the 2N7002-7-F with confidence.
2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon
The Infineon 2N7002H6327XTSA2 is an N-channel enhancement-mode OptiMOS small-signal MOSFET rated at 60 V VDS and 300 mA continuous drain current, housed in a PG-SOT23 (SOT-23-3) surface-mount package. The device delivers a maximum on-state resistance of 3 ohm at VGS = 10 V, achieving low conduction loss for a sub-1 A signal MOSFET while preserving fast switching edges. The 2N7002H6327XTSA2 is the automotive-qualified, tape-and-reel-packaged variant of the classic 2N7002 series, offering production-grade reliability in a footprint-compatible upgrade. An N-channel enhancement-mode MOSFET is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates an inversion layer, allowing current to flow from drain to source. Within the broader semiconductor hierarchy, this part belongs to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family, the discrete transistor category, and ultimately the power-switching semiconductor class. Small-signal MOSFETs like the 2N7002 are optimized for sub-1 A switching rather than power conversion, making them ubiquitous in logic-level translation, level shifting, relay driving, and low-side load switching. Key features of the 2N7002H6327XTSA2 include a gate threshold voltage typically around 2.5 V, low gate charge for fast switching at low drive currents, and an ESD-protected gate structure per Infineon's OptiMOS process. The device's 500 mW power dissipation rating and standard SOT-23-3 footprint enable placement adjacent to microcontrollers or ASICs. Its logic-level compatibility with 3.3 V and 5 V microcontrollers makes it a drop-in companion for GPIO-driven loads. The 2N7002H6327XTSA2 is built on Infineon's planar OptiMOS technology, optimized for low on-resistance per unit area at small die sizes. The result is a robust, production-proven process node widely second-sourced across the industry. Compared with older BJT-based 2N7000 parts, the MOSFET architecture eliminates base current and provides higher input impedance, simplifying microcontroller interface design. Typical applications include low-side switching for relays, solenoids, LEDs, and small DC motors; level shifters between 3.3 V microcontrollers and 5 V or 12 V loads; signal multiplexing and analog switching; battery protection circuits; and as a generic interface buffer in industrial controls and consumer electronics. When designing with this part, ensure VGS does not exceed the maximum gate-source voltage rating and use a gate resistor (typically 100 ohm) to limit ringing. For inductive loads, add a flyback diode to protect the drain from voltage transients exceeding 60 V. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet.
2N7002L - 60V N-Channel MOSFET, SOT-23 | onsemi
The onsemi 2N7002L is an N-channel enhancement-mode small-signal MOSFET rated for 60V drain-source voltage, 115mA continuous drain current, and 7.5 ohm maximum on-state resistance at VGS = 5V, housed in a compact 3-pin SOT-23 (SOT-23-3) surface-mount package. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch in which a gate electric field modulates channel conductivity. Within the component hierarchy, the 2N7002L sits at: MOSFET -> field-effect transistor (FET) -> transistor -> discrete semiconductor device. As an enhancement-mode (normally-off) logic-level device, it requires a positive gate-source voltage to conduct, which simplifies interfacing directly with 5V microcontroller GPIO outputs without a dedicated gate-driver stage. Key features include a 60V VDS rating providing generous margin on 12V and 24V rails, a maximum gate-source voltage of +/-20V, a gate threshold voltage range of 1V to 2.5V, and a power dissipation of 200mW to 225mW (Ta) depending on mounting conditions. The device is produced using high cell density trench MOSFET technology, which minimizes on-state resistance while delivering rugged, reliable, and fast switching performance per the onsemi datasheet. Technically, the trench process gives the 2N7002L its low RDS(on) of 7.5 ohm at 5V gate drive, keeping conduction losses small at its 115mA current class. Its fast switching behavior makes it suitable both as a low-side load switch and as a gate driver for larger power MOSFETs. Static gate drive means essentially zero DC gate current, so quiescent drive power is negligible in battery-powered designs. Typical applications include small servo motor control, power MOSFET gate driving, logic-level shifting between voltage domains, low-side load switching, battery protection circuits, and general-purpose switching in portable and industrial electronics. When designing with the 2N7002L, respect the +/-20V gate-source limit and verify power dissipation at your operating current to stay within thermal limits; series gate resistors of 100 ohm to 1kohm are commonly used to control switching edge rates and damp ringing. This page adds value beyond the manufacturer datasheet by synthesizing distributor pricing, verified drop-in alternatives from multiple brands, an application-by-application selection analysis, and practical design notes in one place.
2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi
The onsemi 2N7002LT1G is a 60 V N-channel enhancement-mode small-signal MOSFET rated for 115 mA continuous drain current and 225 mW power dissipation in the compact 3-pin SOT-23-3 (TO-236) surface-mount package. Its maximum RDS(on) of 7.5 ohms at VGS = 5 V makes it a reliable low-side switch for general-purpose logic-level load switching. A small-signal MOSFET is a field-effect transistor optimized for switching and amplifying low currents rather than handling motor- or power-converter-level loads. Within the power semiconductor hierarchy it sits below power MOSFETs and IGBTs, serving as the workhorse transistor that interfaces microcontroller or logic GPIO outputs to loads such as LEDs, relays, resistive heaters, and switched rails. The 2N7002 family is one of the most widely used small-signal N-channel MOSFETs in the industry, which makes sourcing and cross-referencing straightforward. Key features of the 2N7002LT1G include its 60 V drain-source breakdown voltage (V(BR)DSS), which provides generous headroom for 12 V and 24 V industrial rails, its enhancement-mode gate structure that switches fully off at VGS = 0 V, and low gate charge that allows direct drive from 3.3 V or 5 V logic with a simple series resistor. The lead-free, RoHS-compliant construction supports modern environmental requirements. Technologically, the device uses onsemi small-signal MOSFET cell geometry to balance RDS(on), gate charge, and capacitance. The SOT-23 package offers a thermal path adequate for the rated 225 mW at typical ambient conditions, and the tiny 2.9 mm x 1.3 mm footprint supports dense board layouts. Typical applications include low-side load switching in battery-powered devices, relay and LED drivers, level-shifting and pull-down networks, battery-protection circuits, and general power-management switching in consumer and industrial products. A key design consideration: at 115 mA with a large source-drain voltage drop, power dissipation (I^2 x RDS(on)) approaches the package limit, so verify thermal margins at worst-case load. This page synthesizes distributor pricing, drop-in alternatives, cross-references, and practical design notes not found in the manufacturer datasheet alone.
A2T26H160-24SR3 - 28W Airfast LDMOS 2496-2690 MHz | NXP
The NXP A2T26H160-24SR3 is a 28 W asymmetrical Doherty RF power LDMOS transistor engineered for cellular base station power amplifiers operating across the 2496 to 2690 MHz band. It is an N-channel enhancement-mode lateral MOSFET housed in the NI-780S-4L2L ceramic package, rated for 28 V operation and delivering typical 15.5 dB power gain at 2.58 GHz with 28 W average output power. The device is built on NXP's Airfast generation of LDMOS technology, optimized for high-efficiency Doherty topologies where peak and carrier amplifiers must be tightly matched in gain, phase, and thermal behavior. An RF power LDMOS transistor (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET designed to deliver high RF output power at microwave frequencies while maintaining acceptable gain and efficiency. Within the broader hierarchy, an LDMOS power transistor belongs to the discrete RF power transistor family, itself a subset of power semiconductors used in wireless infrastructure. Doherty amplifier architectures combine a main (carrier) amplifier with an auxiliary (peak) amplifier to maintain high efficiency across a wide output-power back-off range, making LDMOS the dominant technology for 4G LTE and 5G NR base station RF front-ends below 4 GHz. Key features of the A2T26H160-24SR3 include integrated input and output matching networks simplified by the ceramic NI-780S package, broadband capability across the full 2496-2690 MHz band, and high breakdown voltage tolerance that allows reliable operation at the 28 V supply rail typical of macro-cell base stations. The transistor is designed for asymmetrical Doherty operation, meaning the peak amplifier is sized larger than the carrier to handle the peak-to-average ratio (PAR) of modern LTE signals, with appropriate gain matching between the two paths. Its internal matching reduces the bill of materials required at the PCB level. Architecturally, the device uses NXP's seventh-generation Airfast LDMOS process, which delivers higher power density, lower parasitic capacitance, and improved thermal performance compared to earlier Airfast generations. The lateral structure provides excellent gain flatness across the band, while the enhancement-mode gate design simplifies bias circuits by eliminating the need for negative gate voltages during operation. Typical applications include 4G LTE and 5G NR macro-cell base stations, small-cell and massive-MIMO antenna arrays, and Doherty final-stage power amplifier modules for the 2.5-2.7 GHz international wireless bands (Bands 38, 41, and n78). The device is also used in repeaters and boost amplifiers where linearity and efficiency across modulation bandwidths are critical. When designing with this LDMOS, ensure adequate copper heat-spreading under the ceramic flange and use a thermal interface material with low thermal resistance. Bias sequencing should follow NXP's reference design: drain voltage applied first, then gate quiescent current set to the recommended IDQ for Doherty operation, and RF input applied only after both rails are stable. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, thermal design notes, and Doherty integration guidance not consolidated in the manufacturer datasheet, giving RF power amplifier design engineers a single reference for component selection, sourcing, and layout planning.
AFT09S282NR3 - 80W 720-960MHz RF LDMOS Transistor | NXP
The NXP Semiconductors AFT09S282NR3 is an 80-watt RF power LDMOS transistor housed in a 3-pin OM-780-2 (NI-780S-style ceramic) surface-mount package with exposed thermal pad, designed for cellular base station applications across the 720-960 MHz frequency range. The device operates from a 28 V nominal supply and is rated for 70 V VDSs, with a typical 20 dB power gain at 960 MHz and 1.4 A DC bias current on the gate. An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor power device optimized for high-frequency, high-power amplification. Within the broader taxonomy, it sits at LDMOS -> RF power MOSFET -> power transistor -> discrete semiconductor. LDMOS technology dominates cellular base station power amplification because it offers high gain, high efficiency, and excellent thermal performance compared to silicon bipolar or GaAs alternatives of similar cost. The NXP Airfast AFT09S282NR3 family key features include integrated electrostatic discharge (ESD) protection, an internal input matching network that simplifies board-level design, broadband response across the 720-960 MHz cellular bands, and a high gain-flatness profile. The thermally efficient OM-780-2 ceramic package with a flanged or non-flanged lead offers theta_JC values consistent with extended duty-cycle operation. Architecturally, this is an N-channel enhancement-mode lateral MOSFET. The lateral structure and thick metal field plates reduce on-state losses and improve ruggedness into mismatched loads (VSWR tolerance), enabling reliable operation in Doherty amplifier configurations used at the final stage of macro-cell base stations. Typical applications for the AFT09S282NR3 include single-ended or Doherty power amplifiers in 4G LTE and multi-carrier GSM/EDGE base stations operating in the 900 MHz cellular band (GSM900, cellular 850/900, LTE Band 5/8). Designers also use it for digital video broadcast transmitters and industrial RF heating sources at sub-GHz frequencies. When designing with this part, pay particular attention to thermal management. At full 80 W CW RF output in a Doherty configuration the device dissipates considerable heat; use a copper-molybdenum or copper-tungsten heatsink with proper thermal interface material to keep the junction within the safe operating envelope. This page synthesizes distributor pricing, same-family drop-in alternatives, and Doherty amplifier design notes not found in the manufacturer datasheet - a starting point for engineers evaluating NXP's AFT09S282N family.
AFT18H357-24NR6 - 63W LDMOS RF Power Transistor 1.8GHz | NXP
The NXP AFT18H357-24NR6 is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications in the 1805 MHz to 1880 MHz band. It is an N-channel enhancement-mode lateral MOSFET housed in an OM-1230-4L2L ceramic air-cavity package, operates from a 28 V drain supply, and delivers 17.5 dB typical power gain at the 1805 MHz test point. The device is engineered for high-efficiency Doherty amplifier topologies where a carrier and peaking amplifier arrangement enables backoff efficiency above what a single-ended PA can achieve. According to the NXP datasheet, the AFT18H357-24NR6 is part of the Airfast 28 V LDMOS RF power family and is targeted at multi-carrier GSM, WCDMA, and LTE base-station PAs that demand high linearity, ruggedness, and thermally stable operation under continuous RF drive. A Doherty amplifier is a two-path RF power amplifier architecture that uses a carrier amplifier biased in Class AB and a peaking amplifier biased in Class C; the two outputs are combined through a quarter-wave impedance inverter so the carrier amplifier sees an apparent load modulation, keeping efficiency high at 6 to 10 dB output backoff compared with a standard Class AB design. This is why cellular base-station PAs prefer asymmetric or symmetric Doherty structures, and why LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistors dominate macro-cell transmit chains: they offer high gain, high breakdown voltage, and proven reliability at 28 V supplies. The AFT18H357-24NR6 belongs to the broader Airfast 24-series family of N-channel enhancement-mode LDMOS RF power transistors from NXP Semiconductors. Key features include 63 W typical output power (P3dB-class), 17.5 dB power gain at 1.81 GHz, operation over the 1805-1880 MHz frequency band, 28 V typical drain supply, an integrated ESD protection structure, and an air-cavity ceramic package (OM-1230-4L2L) with a copper-flange heatsink interface. The thermal resistance from junction to case is specified to support continuous-wave RF operation in properly cooled base-station environments. The part is rated MSL-3 (Moisture Sensitivity Level 3) and is supplied in tape-and-reel packaging with a peak reflow temperature of 260 C per JEDEC J-STD-020. The asymmetric Doherty architecture of the AFT18H357-24NR6 is built around the 28 V LDMOS process, which NXP optimized for cellular base-station linearity and ruggedness. The device integrates input and output matching structures external to the die, and the flanged ceramic package provides a low-inductance source connection through the package mounting flange. Reliability is qualified to the standards typically applied to NXP Airfast RF power products, including high-temperature operating-life and RF overdrive stress profiles. Typical applications include 4G LTE and 5G NR (sub-6 GHz band 3 / downlink 1805-1880 MHz) macro-cell base-station power amplifiers, multi-carrier GSM and WCDMA transmit chains, asymmetric Doherty final stages in remote radio heads, and high-power amplifier driver or output stages where 28 V LDMOS reliability is required. The 1805-1880 MHz band specifically aligns with international cellular downlink allocations, including the n3 5G NR band and a portion of the PCS/AWS spectrum. Designers should note that the AFT18H357-24NR6 requires a high-conductivity copper or copper-molybdenum heatsink bolted to the package flange with the recommended torque value, and that the input/output matching networks must be laid out on the PCB laminate following NXP reference design guidance. Using FR4 instead of low-loss PCB material above 1.5 GHz will degrade efficiency. This page synthesizes distributor pricing, MSL/RoHS qualification data, and practical design notes not consolidated on the manufacturer datasheet, providing a single reference for RF PA design engineers.
AFT18HW355SR5 - 350W RF Power LDMOS Transistor 1.8GHz | NXP
The NXP AFT18HW355SR5 is a 350 W RF power LDMOS transistor designed for 1805-1880 MHz cellular base-station applications requiring very wide instantaneous bandwidth, housed in the NI230S-4 (SOT1829) air-cavity ceramic package with an internal input matching network that simplifies board-level Doherty integration. The device is based on NXP's 50 V-class LDMOS process, optimized for W-CDMA, LTE, and 5G NR driver and final-stage operation. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized RF power MOSFET fabricated with a lateral drift region on a p-type epitaxial layer; the geometry reduces the drain-to-source feedback capacitance Cgd, which raises the breakdown voltage while still allowing high gain and high drain efficiency in the VHF/UHF region. Within the broader hierarchy, the AFT18HW355SR5 sits as an RF power transistor > discrete semiconductor > power amplifier building block, where it typically pairs with a digital pre-distortion (DPD) linearizer to meet modern base-station linearity masks. Key specifications include 15.2 dB typical gain at 1880 MHz, 350 W pulsed output power capability, 28 V nominal drain supply, and a thermally enhanced ceramic flange package rated for 260 degrees C peak reflow. The internal input match reduces external component count, and the air-cavity ceramic construction supports the high junction-to-case thermal flux required at multi-hundred-watt output levels. In a typical cellular-Doherty final stage the AFT18HW355SR5 is biased in class-AB with the carrier amplifier handling the average envelope and a peak amplifier providing efficiency at the 6-9 dB PAR crest of W-CDMA and LTE signals; the device family is widely used by NXP reference designs for macro base-station MIMO and small-cell final stages. Primary applications include W-CDMA/LTE/5G NR macro base-station final stages, Doherty power amplifiers for cellular infrastructure, RF plasma generators, and industrial/scientific RF heating. Replacement decisions should be made on a circuit-by-circuit basis - the AFT18HW355SR5's NI230S-4 ceramic flange footprint is large and not pin-compatible with smaller LDMOS packages used in earlier macro PA boards. When designing a thermal management layout, use a thermally conductive epoxy or solder-attached heatsink with the flange kept below 70 degrees C under continuous CW operation, and gate-bias sequencing must be applied before drain voltage to avoid parametric drift. This page synthesizes verified distributor pricing, parametric cross-references, and practical design notes that are not consolidated in the manufacturer datasheet alone.
AFT23S170-13SR3 - 45W LDMOS RF Power Transistor 2.3-2.4GHz | NXP
The NXP AFT23S170-13SR3 is a 45 W average RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) N-channel enhancement-mode transistor designed for 2300-2400 MHz cellular base station amplification, supplied in the NI-780S ceramic package. Per the NXP datasheet, this Airfast device delivers 45 W average output power with 18.8 dB gain at 2400 MHz from a 28 V supply rail at 1100 mA quiescent current, making it suitable for W-CDMA, LTE, and TD-LTE driver and final-stage base-station PAs in the 2.3-2.4 GHz Band 40/41 spectrum allocated for 4G/5G TDD cellular deployments. An RF power LDMOS is a specialized power transistor in which the active MOSFET structure is fabricated laterally (source and drain interleaved on the same silicon surface) so the device can deliver high RF output power at elevated drain voltages while remaining easy to match with 50 ohm networks. Within the cellular base-station power-amplifier hierarchy, the LDMOS family sits between GaAs HBT front-ends and emerging GaN-on-SiC devices, offering the best cost-to-watt ratio for sub-3 GHz macro-cell and small-cell transmitters up to roughly 100 W average, where it remains the industry workhorse. Key electrical characteristics include 45 W typical average output power at 2.4 GHz, 18.8 dB typical power gain, 28 V drain bias operation, 1100 mA quiescent bias current, and a 65 V maximum drain-to-source rating. The NI-780S-6 ceramic flange package provides a low thermal-resistance path that simplifies heatsink integration in Doherty PA architectures where two such amplifiers are combined for high-efficiency back-off operation. The device employs NXP's Airfast-generation enhancement-mode LDMOS process, using field-plate and source-connected through-substrate vias to maximize ruggedness, gain, and efficiency at 28 V. Integrated ESD protection and a stable thermal stack allow the part to survive 10:1 VSWR mismatch at the rated bias without permanent degradation, a critical requirement for cellular infrastructure where antenna faults are not uncommon. Typical applications include 2300-2400 MHz cellular base-station power amplifiers (Doherty and push-pull topologies), W-CDMA/LTE/TD-LTE driver and final stages, and wireless-infrastructure amplifiers for fixed-wireless access (FWA) and small-cell radios. It is commonly used in NXP reference designs for Band 40 (TDD-LTE 2300 MHz) and Band 41 (TDD-LTE 2500 MHz) PAs. When biasing this transistor, designers should set VGS near the 1100 mA IDQ operating point for Class-AB operation, ensure the drain supply is current-limited at the laboratory DC source, and add a gate-resistor network of a few kilohms to suppress VCO oscillations and improve stability below 100 MHz. The 28 V bias requirement reduces -48 V to 28 V conversion loss versus 50 V LDMOS parts used in higher-band macro-cell designs. This page synthesizes distributor stock and lifecycle information, drop-in NXP Airfast alternatives, and practical Doherty design considerations not all collected in a single NXP datasheet excerpt.
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
The NXP AFT26H050W26SR3 is a 9 W average asymmetrical Doherty RF power LDMOS transistor engineered for cellular base station applications across the 2496 MHz to 2690 MHz instantaneous bandwidth, housed in the NI-780S-4L4L-8 overmolded ceramic package. Key specifications include a 28 V test bias, 100 mA quiescent test current, 14.2 dB power gain, 9 W average output power, and a 65 V maximum drain-source rating with 150 °C maximum junction temperature. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor power device specifically optimized for RF signal amplification, combining high breakdown voltage with high transition frequency. It belongs to the power transistor hierarchy (RF transistor -> power transistor -> discrete semiconductor) and is the de facto standard active device for high-power base-station transmitters due to its high gain, wide bandwidth, and thermal robustness in compact ceramic packages. Key differentiating features include NXP's Airfast asymmetric Doherty architecture optimized for wide instantaneous bandwidth, integrated ESD protection, and a single-ended input configuration. The NI-780S package provides a low thermal resistance path from the silicon die to the system heatsink, enabling reliable CW and pulsed operation at full rated power. The 2.5-2.7 GHz band covers international LTE-TDD Band 38, Band 41, and WiMAX-style allocations, allowing one transistor to serve multiple regional deployments. Technically, the device uses a laterally diffused N-channel silicon MOSFET die built on a high-resistivity substrate, with a metal-oxide gate stack tuned for high drain efficiency in Class AB/C bias. The asymmetric Doherty topology pairs a main amplifier biased Class AB with a peaking amplifier biased Class C, producing 9 W average output while maintaining back-off efficiency for high-PAPR OFDM and LTE signals. Typical applications include 4G LTE base-station driver and final PA stages, small-cell and macro-cell transmitter outputs, and TDD transceiver power blocks rated at 9 W average. The device is also found in correction amplifier paths for DPD-equipped radios and in defense/civilian RF links operating in the 2.5-2.7 GHz band. When designing with this part, ensure the source impedance on the input side is matched to the device test-fixture tuning, since any deviation shifts both gain and efficiency. Use a forced-air or liquid-cooled heatsink, keep leads short for thermal relief, and decouple the gate bias supply with a low-ESR tantalum or ceramic capacitor placed within 5 mm of the bias pin. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, including cross-references and selection guidance between pin-compatible NXP Airfast variants.
AFT26H250W03SR6 - 50W RF LDMOS Transistor 2.5GHz 28V | NXP
The NXP Semiconductors AFT26H250W03SR6 is a 50 W RF power LDMOS transistor optimized for the 2496-2690 MHz band and housed in a NI-1230-4S (NI-1230S-4S) ceramic air-cavity package. It operates from a 28 V drain supply, is rated for 14.1 dB typical power gain at 2496 MHz, and is part of the Airfast RF Power family targeting cellular infrastructure and industrial RF power applications. What is an RF power LDMOS transistor? An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET architecture engineered to deliver high RF output power at high efficiency and high gain. Within the power-semiconductor hierarchy, LDMOS transistors sit between standard power MOSFETs (used for switching) and GaN HEMTs (used at higher frequencies), with LDMOS dominating the sub-3 GHz cellular infrastructure segment because of its excellent linearity, ruggedness, and mature 28 V supply ecosystem. Airfast is NXP's brand name for this RF power portfolio. Key differentiating features include 14.1 dB typical power gain at 2496 MHz, a 700 mA typical quiescent drain current bias point, and an internally matched input that simplifies PCB-level integration. The device is designed for 50 W average output power in Doherty and standard class-AB amplifier configurations used in 2.5 GHz LTE, TD-LTE, and WCDMA base-station deployments. Technically, the device uses a high-voltage LDMOS die with integrated ESD protection and is specified for operation up to a maximum junction temperature of 225 C. Pins 1 and 2 are DC-coupled and RF-independent, providing flexible bias routing. The NI-1230-4S ceramic package offers low thermal resistance and is bolted directly to the heatsink, eliminating the need for external matching networks. Typical applications include LTE and TD-LTE base-station power amplifiers in the 2.5 GHz band, repeaters and small-cell infrastructure, industrial RF heating, and aerospace RF links. Compared with discrete GaN solutions, this LDMOS part delivers lower cost at sub-3 GHz frequencies while still meeting the linearity required for modern modulation schemes. When designing in this device, follow NXP's recommended thermal management: bolt the flange directly to a copper or aluminum heatsink with thermal compound, and ensure the gate bias network presents the documented quiescent current at idle. Never exceed 28 V on the drain, and keep the lead length to the drain matching network short to preserve the 14.1 dB of gain. This page synthesizes distributor stock data, parametric nearest-equivalents, and practical RF design notes not consolidated in the manufacturer datasheet.
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
The NXP AFT26HW050GSR3 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor in a 9-pin NI-780GS-4L4L ceramic package, rated for 9 W average output power across the 2496-2690 MHz cellular base-station band. It is part of the NXP Airfast family and is specifically designed for use in an asymmetric Doherty power amplifier configuration, delivering 14.2 dB gain at 2.69 GHz from a 28 V supply while operating from a 100 mA quiescent bias. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimized for high-frequency, high-power RF amplification. Within the broader component taxonomy, an LDMOS RF transistor sits under: discrete semiconductor -> transistor -> RF transistor -> power MOSFET -> LDMOS. Airfast is NXP's brand family that targets high-efficiency Doherty architectures used in 4G LTE and 5G NR macro-cell radios, where efficiency and wide instantaneous bandwidth are required simultaneously. Key features include 9 W average output power, an instantaneous bandwidth of 2496-2690 MHz, 14.2 dB power gain at 2.69 GHz, integrated ESD protection, and an internally matched input that simplifies the PCB-side matching network. The device supports a 65 V maximum drain-to-source rating, providing 2:1 headroom above the 28 V typical operating rail. Its ceramic NI-780GS package offers low thermal resistance and is bolted directly to the heatsink for base-station thermal management. Internally, the AFT26HW050GSR3 uses NXP's sixth-generation Airfast LDMOS process, with internal pre-matching at the input and a pair of simplified gate bias networks that allow direct connection to the system gate driver. Designed specifically as the carrier or peaking half of an asymmetric Doherty PA, it pairs with the complementary device in the NI-780 footprint to form a complete 40 W or 50 W average Doherty amplifier module. Typical applications include 4G LTE and 5G NR TDD massive-MIMO macro-cell base stations, asymmetric Doherty power amplifier modules for cellular infrastructure, and high-efficiency RF front-end final stages for frequency bands n41, n38, B38, B40, and B41. In multi-transmitter active antenna systems, multiple AFT26HW050GSR3 PAs are combined to deliver higher sector throughput. A key design consideration is that the AFT26HW050GSR3 is a single transistor section; a complete Doherty amplifier requires an external quadrature coupler and a second matched LDMOS device (typically a peaking transistor of equivalent power). Proper DC bias sequencing must be observed at power-up and power-down to prevent parametric shifts or device damage. This page synthesizes NXP datasheet parameters, real distributor pricing, drop-in Airfast family alternatives, and Doherty-specific design notes not aggregated in any single distributor listing.
AFT26HW050SR3 - 9W Asym Doherty LDMOS 2496-2690 MHz | NXP
The NXP AFT26HW050SR3 is a 9 W average (50 W peak) asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications in the 2496–2690 MHz band. Built on NXP's Airfast generation technology, it integrates the main and peak devices in a single ceramic NI-780-4S4 package, delivering 14.2 dB gain at 28 V with very wide instantaneous bandwidth capability. The part is rated for 100 mA quiescent bias and is engineered for high-efficiency Doherty amplifier topologies used in modern 4G LTE and 5G NR infrastructure. An RF power LDMOS transistor is a lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power operation. Within the broader taxonomy it is a power MOSFET, then a discrete semiconductor, and finally a building block of RF front-end modules. Airfast LDMOS specifically targets cellular base-station power amplifiers where linearity, gain, and thermal stability across instantaneous bandwidth are paramount. The AFT26HW050SR3 sits in NXP's Airfast 26-series lineup aimed at the 2.6 GHz TDD-LTE and emerging 5G NR bands. Key features include operation from 2496 to 2690 MHz, 14.2 dB typical power gain, integrated asymmetrical Doherty input networks, an NI-780-4S4 air-cavity ceramic package for low thermal resistance, and RoHS-compliant construction. The wide instantaneous bandwidth supports multi-carrier LTE signals up to 60 MHz or wider without re-matching, simplifying radio unit design for carriers aggregating multiple LTE bands. The transistor uses an N-channel enhancement-mode LDMOS structure with separate drain pads for the main and peak PA sections. Internal matching reduces external component count, and the integrated design shortens the Doherty combiner path, improving efficiency at 6–9 dB output back-off where LTE signals statistically operate most of the time. Typical applications include 4G LTE and 5G NR TDD base-station power amplifiers, multi-carrier macro-cell transmitters, and Doherty amplifier reference designs for the 2.6 GHz band. It is also used in active antenna systems (AAS) and small-cell infrastructure where size, gain, and Doherty efficiency converge. When designing with the AFT26HW050SR3, follow the reference PCB layout and bias network from the NXP application notes for Doherty operation. Adequate heatsinking and forced-air cooling are essential at full CW-rated output, and harmonic filtering must be sized for the selected LTE signal bandwidth. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, providing engineers with a faster path to component selection for 2.6 GHz base-station PA designs.
AFT26P100-4WSR3 - 22W 2.6GHz Doherty RF LDMOS | NXP
The NXP AFT26P100-4WSR3 is a 22-watt symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability over the 2496 to 2690 MHz frequency range. The device operates from a 28 V drain supply, delivers 15.1 dB power gain at 200 mA quiescent bias, and is housed in an NI-780S-4 (NI780S-6) ceramic air-cavity package optimized for high-power RF performance. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET designed to deliver high RF output power with excellent gain and efficiency in the VHF/UHF/microwave bands. LDMOS technology is the dominant solution for cellular base station power amplifiers because it combines high breakdown voltage, good linearity, and a favorable cost-per-watt ratio. Within the RF power transistor hierarchy, the AFT26P100-4WSR3 belongs to NXP's Airfast family, which sits at the high-power end of the cellular infrastructure market and is targeted at macro-cell Doherty amplifier final stages. Key features include 22 W average output power under Doherty operation, 15.1 dB typical power gain, dual-channel symmetrical device geometry that simplifies Doherty combiner design, and a 65 V maximum drain-source voltage rating for robust operation into high VSWR loads. The NI-780S-4 ceramic package provides low thermal resistance and is designed for direct bolt-down mounting on a heatsink or thermal spreader. The symmetrical two-section transistor layout enables easy implementation of a two-way Doherty amplifier with main and peak paths on a single die pair. Architecturally, the device is an N-channel enhancement-mode lateral MOSFET fabricated on NXP's high-volume LDMOS process, with internal input and output pre-matching to reduce external matching component count. The high gain and wide instantaneous bandwidth make it particularly suitable for multi-carrier GSM, WCDMA, and LTE base station applications operating in the 2.6 GHz band (Band 38, Band 41, and similar TDD allocations). Typical applications include 4G LTE and 5G NR massive-MIMO base station final-stage Doherty amplifiers, multi-carrier GSM/EDGE power amplifiers, and Doherty driver stages in macro-cell base station radios covering the 2496-2690 MHz range. It is also used as a building block in small-cell and remote-radio-head (RRH) transmit chains that require high power density in a compact footprint. Designers should pay particular attention to PCB thermal management: the NI-780S-4 package requires a robust thermal interface (thermal compound or solder preform) and a low-thermal-resistance heatsink to keep the junction below 200 C at full 22 W average output. Proper bias sequencing and a regulated gate supply are required to avoid thermal runaway during Doherty operation. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
AFV09P350-04GNR3 - 100W 920MHz LDMOS RF Power Transistor | NXP
The NXP Semiconductors AFV09P350-04GNR3 is a 100 W symmetric Doherty RF power LDMOS transistor designed for cellular base station power amplifiers covering the 720 to 960 MHz frequency range. Housed in the OM-780G-4L surface-mount ceramic package, it operates from a 48 V drain supply, delivers 19.5 dB of power gain at 920 MHz, and is rated for 100 W average output power in Doherty amplifier configurations used in modern 4G LTE and 5G NR radio access networks. An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor power device optimized for high-frequency, high-output RF amplification. The LDMOS architecture combines a short channel length with a lightly doped drain drift region, enabling high breakdown voltage, high gain, and excellent thermal stability. Within the power management hierarchy, RF LDMOS transistors sit alongside GaN HEMTs as the workhorse devices for macro-cell base-station PAs; they are tuned for high linearity, gain, and ruggedness under mismatch, making them the dominant technology below 3 GHz. Key features include a 48 V supply rail typical of macro-cell base stations, 19.5 dB typical gain at 920 MHz that simplifies driver-stage design, 100 W average output power in Doherty service, and a symmetric Doherty pair topology that eliminates the input splitter/output combiner imbalance of conventional asymmetric Doherty designs. The OM-780G-4L ceramic package provides low parasitic inductance, an integrated heat spreader, and an epoxy-sealed flange for direct PCB or heatsink mounting. The AFV09P350-04GNR3 is built on NXP's AirFast-generation LDMOS process technology, featuring a high-resistivity silicon substrate and a gold-plated metal system that minimizes conduction losses. Symmetric Doherty operation allows main and peaking devices to be biased without an offset, simplifying gate-bias networks and improving back-off efficiency versus legacy asymmetric Doherty designs. The device is rated for continuous-wave (CW) operation as well as pulsed waveforms common in TDD-LTE and 5G NR applications. Typical applications include 4G LTE and 5G NR macro-cell base-station PAs operating in the cellular 900 MHz band (Band 8), distributed antenna systems, small-cell and integrated radio units, and general-purpose high-power UHF transmitters in the 720-960 MHz range. When designing with this device, the OM-780G-4L package requires careful thermal management - solder to a copper-clad PCB land pattern with adequate copper pour or attach the ceramic flange to an external heatsink. Input and output matching networks must be optimized for the target sub-band, and proper sequencing of gate bias must be observed to avoid in-rush currents on the 48 V rail. This page synthesizes distributor pricing, NXP cross-reference alternatives, and practical thermal design guidance not found in the manufacturer datasheet alone.
AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon
The Infineon AIMBG120R010M1XTMA1 is a CoolSiC™ G1 automotive-grade 1200 V silicon-carbide (SiC) trench MOSFET in a PG-TO263-7 surface-mount package. It is rated for 205 A continuous drain current (at Tc) and 882 W power dissipation, with a best-in-class typical on-resistance of 8.7 mΩ. The trench SiC technology enables best-in-class switching energy, reduced reverse-recovery charge, and higher switching frequencies than equivalent silicon IGBTs or super-junction MOSFETs. The part is qualified to AEC-Q101 for automotive traction inverter and on-board charger (OBC) applications. A silicon-carbide MOSFET is a wide-bandgap (WBG) power switch that uses SiC as the semiconductor substrate instead of silicon. Compared to silicon MOSFETs and IGBTs, SiC MOSFETs offer higher breakdown field, lower on-resistance per unit area, higher operating temperature (up to 200°C junction), and dramatically lower switching losses. Within the discrete-power hierarchy, a SiC MOSFET sits between standard MOSFETs and IGBTs: like a MOSFET it is voltage-controlled with a gate, but like an IGBT it can block 1200 V or more efficiently, making it the device of choice for high-voltage high-frequency power conversion. Key features of the AIMBG120R010M1 include a 1200 V drain-source breakdown voltage, a continuous drain current of 205 A (Tc), a pulsed current capability (per datasheet) above 400 A, and a maximum junction temperature of 175°C (some CoolSiC G1 datasheets extend to 200°C). The body diode is robust with low reverse recovery (Qrr typically well under 100 nC), supporting hard-switched bridge topologies. The PG-TO263-7 package has an exposed tab that must be soldered to the PCB copper pour to achieve the rated power dissipation. Typical applications include EV traction inverters (400 V and 800 V architectures), on-board chargers (OBC), DC-DC converters for EV powertrains, solar string inverters, industrial servo drives, and aerospace power conversion. The AEC-Q101 automotive qualification makes it directly suitable for xEV platforms. When designing with this device, the gate drive must deliver +15 V to +18 V for full enhancement with low RDS(on), and a negative turn-off voltage of -3 V to -5 V is recommended to prevent parasitic turn-on in half-bridge configurations. Always verify creepage and clearance for 1200 V operation per IEC 60664, and provide adequate thermal management to keep Tj below 150°C in automotive continuous duty. This page synthesizes distributor pricing (DigiKey, Mouser, LCSC, Arrow), AEC-Q101 qualified drop-in alternatives in the same PG-TO263-7 footprint, and practical gate-drive and thermal design notes not consolidated in the manufacturer datasheet.
AIMW120R035M1H - 1200V 35mΩ SiC MOSFET | Infineon | Automotive
The Infineon AIMW120R035M1H is a CoolSiC automotive-grade 1200V silicon carbide (SiC) trench MOSFET with an on-state resistance of 35 mOhm at Tj = 25C and a maximum continuous drain current of 52 A at 25C, housed in a TO-247 through-hole power package. It belongs to Infineon's first-generation (G1) 1200V CoolSiC trench platform targeted at automotive traction and industrial power conversion. A silicon carbide MOSFET is a unipolar power semiconductor switch that uses a wide-bandgap SiC semiconductor layer instead of conventional silicon. Because SiC offers roughly ten times higher critical electric field strength, the drift region can be made much thinner and more heavily doped, yielding lower specific on-resistance, lower switching losses, and far higher junction temperature capability than comparable silicon superjunction or IGBT devices. Within the power semiconductor hierarchy, the AIMW120R035M1H sits under power MOSFETs, discrete semiconductors, and power conversion components. Key differentiating specifications include the 1200 V maximum drain-source voltage, the 35 mOhm typical on-state resistance at 25C, and the 52 A continuous drain current rating at 25C. The trench-gate CoolSiC cell design provides a highly reliable gate oxide and supports the negative gate-source voltage turn-off margins demanded by automotive designs, while the wide bandgap material enables low gate charge and fast, clean switching transitions. Technically, the CoolSiC trench architecture couples a deep trench gate with an optimized cell pitch to reduce channel resistance, which is the dominant resistance term in medium-voltage SiC MOSFETs. Infineon explicitly recommends operating conditions that do not exceed 80% of the datasheet maximum ratings for optimum lifetime and reliability, a derating guideline documented in the datasheet maximum-ratings section. Typical applications include onboard chargers (OBC) and DC-DC converters in electric vehicles, traction inverters auxiliary supplies, solar string inverters, and industrial motor drives operating from 800V-class DC buses. The 1200 V blocking capability with 35 mOhm on-resistance makes the device a strong fit for half-bridge and boost topologies switching at 50-150 kHz. A key design consideration is gate-drive engineering: fast SiC switching produces high dv/dt, so designers should minimize common-source inductance, use negative gate drive for reliable turn-off, and verify thermal design against the 80% derating recommendation for maximum ratings. This page synthesizes verified datasheet parameters, drop-in alternatives, pricing tiers, and practical design guidance not found in the manufacturer datasheet alone. Pricing data referenced on this page is as of 2026-09-11.
AON6414A - 30V N-Channel MOSFET, 50A, 8mΩ | Alpha & Omega
The Alpha & Omega Semiconductors AON6414A is a 30 V N-Channel MOSFET rated for 50 A continuous drain current, built on advanced trench MOSFET technology and offered in a surface-mount 8-DFN (5x6) package. Per the manufacturer datasheet it achieves an extremely low R<sub>DS(on)</sub> of 8 mΩ at V<sub>GS</sub> = 10 V and is intended as a high-side switch in SMPS and general-purpose load-switch applications. The part dissipates 2.3 W on the PCB (Ta) and 31 W with case mounting (Tc), making thermal management a key design consideration. An N-Channel MOSFET such as the AON6414A is a voltage-controlled, majority-carrier device in which a positive gate-to-source voltage creates an inversion layer (channel) beneath the gate oxide, permitting electron flow between source and drain. In the broader taxonomy the part is a power MOSFET, a sub-family of discrete transistors and the workhorse switching element inside switch-mode power supplies (SMPS), DC-DC converters, and battery-management systems. AOS targets this 30 V/50 A class at point-of-load (POL) regulators, USB-PD rails, and high-current load switching where ultra-low R<sub>DS(on)</sub> directly translates to lower conduction loss and higher efficiency. Key features include trench technology generation N-channel construction, very low on-resistance (8 mΩ max at V<sub>GS</sub>=10 V), low gate charge, and a small 5×6 mm DFN footprint with an exposed pad for low thermal resistance. The 50 A continuous drain rating (T<sub>C</sub>) is well above the typical 13 A figure on a FR-4 board without heatsinking, so designers must verify junction temperature with their real PCB layout. Application coverage spans high-side switching in SMPS, DC-DC converter synchronous-rectifier and control-side FETs, battery-powered load management, and general purpose switching. When using the AON6414A as a high-side switch, place a 10 kΩ pull-down on the gate to prevent inadvertent turn-on during power-up, and observe the SOA curves for pulsed load conditions.
ATP114-TL-H - 60V 55A P-Channel MOSFET ATPAK | onsemi
The onsemi ATP114-TL-H is a P-Channel Power MOSFET rated at -60V VDS and -55A continuous drain current (Ta), with a 60W power dissipation rating at Tc, housed in an ATPAK surface-mount package. It features a typical on-resistance of 16 mOhm at VGS = -10V and is designed for general-purpose switching applications including load switching, DC-DC converters, motor control, and power management circuits where a P-channel high-side switch is preferred over an N-channel solution to simplify gate drive design. A P-Channel Power MOSFET is a type of field-effect transistor (FET) in which the channel is formed by p-type semiconductor material, and the device is turned on by applying a negative gate-to-source voltage. P-channel MOSFETs sit in the same hierarchy as N-channel MOSFETs under the parent family of power MOSFETs, which themselves belong to the broader category of discrete semiconductors used for power switching. Because the drain is at the lower potential and the source is at the higher potential (opposite of N-channel), a P-channel device enables low-side gate drive referenced to ground — eliminating the need for a bootstrap or charge pump circuit in high-side switching topologies. The ATP114-TL-H delivers a typical R_DS(on) of 16 mOhm at VGS = -10V, providing low conduction loss and high efficiency when used as a high-side switch in 12V automotive and industrial systems. Its ATPAK package offers a robust mechanical form factor with a drain-tab connection on top, suitable for surface-mount manufacturing. The device is qualified for switching applications with a focus on minimizing switching losses through fast rise and fall times. Internally, the ATP114 uses a vertical DMOS structure with a p-channel inversion layer, leveraging onsemi's standard silicon MOSFET process technology. The device exhibits low gate charge for fast switching transitions and low on-resistance for minimal conduction loss, making it suitable for high-frequency PWM applications such as synchronous rectification in buck topologies. Typical applications include automotive load switching (lamps, solenoids, motors), DC-DC converter high-side switches, battery protection circuits, power OR-ing, and general-purpose industrial switching. The P-channel topology simplifies the gate drive circuit when switching a positive rail because the gate is referenced to the source (system positive rail). When designing with the ATP114-TL-H, ensure adequate copper-area heat dissipation because the ATPAK package relies primarily on the PCB drain tab for thermal relief. For high-current applications, use wide PCB traces or multiple vias to the drain pad. Note that since this is a MOSFET, the part should not be used in the vicinity of highly charged objects, per the manufacturer datasheet warning. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single decision-ready reference for the ATP114-TL-H.
AUIRF7640S2TR - 60V 21A DirectFET MOSFET for Class D | Infineon
The Infineon AUIRF7640S2TR is an automotive-grade N-channel HEXFET power MOSFET rated at 60 V VDS, with continuous drain current of 5.8 A at 25 °C ambient (TA) and 21 A at 25 °C case (TC), housed in the surface-mount DirectFET SB package. Per the Infineon datasheet, the part combines the latest Automotive HEXFET silicon technology with the DirectFET platform, optimized specifically for automotive Class D audio amplifier output stages. Maximum power dissipation is 2.4 W on TA and 30 W on TC, and the on-resistance is 36 mΩ typical. A DirectFET MOSFET is a chip-scale surface-mount power package in which the silicon die is mounted on a metallic can that forms both the drain contact and a low-resistance thermal path to the PCB. Unlike a standard SO-8 or DPAK, DirectFET places the source and gate on the top side and the drain on the bottom, providing an extremely low package resistance and superior thermal performance for the same footprint. The DirectFET SB case variant is widely used in audio amplifier output stages where both low RDS(on) and clean thermal management are required. Key features include a logic-level compatible gate drive, low total gate charge (Qg = 7.3 nC typical) that minimizes driver losses, and an automotive-grade qualification flow targeting AEC-Q101 reliability. The part is rated for avalanche operation and is intended for high-frequency PWM switching in the 250 kHz to 500 kHz range typical of Class D amplifiers. The DirectFET SB land pattern is electrically and thermally compatible with industry-standard layouts, simplifying PCB design and enabling vapor-phase, infrared, or conventional reflow soldering. Typical applications include automotive Class D audio amplifiers (4 Ω and 8 Ω loads), high-current DC-DC synchronous rectifiers, motor drive half-bridges, and OR-ing FETs in redundant power systems. The combination of 60 V rating and 21 A continuous drain current makes it suitable for 12 V and 24 V automotive bus rails where load-dump transients must be tolerated. When designing with this part, ensure that the PCB copper area under the DirectFET can is sized to keep junction temperature below 150 °C at worst-case load. The gate drive should swing at least 10 V for full RDS(on) optimization, although the part will turn on at 4.5 V. Always consult the manufacturer datasheet for SOA curves and thermal derating under pulsed audio loads.
AUIRF7769L2TR - 100V 3.5mΩ 375A Automotive DirectFET MOSFET | Infineon
The Infineon AUIRF7769L2TR is an automotive-grade N-channel HEXFET power MOSFET rated at 100V with an ultra-low R<sub>DS(on)</sub> of 3.5 mΩ at V<sub>GS</sub>=10V and a continuous drain current rating of 375A (T<sub>C</sub>) in a surface-mount DirectFET Isometric L8 package. It combines Infineon's latest Automotive HEXFET Power MOSFET silicon technology with the advanced DirectFET packaging platform, achieving the lowest on-state resistance in a footprint compatible with DPAK (TO-252AA) layouts while delivering only a 0.7 mm profile above the PCB. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals, enabling high-efficiency power conversion. Within the broader taxonomy, a MOSFET belongs to discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs, where it serves as the primary switching element in DC-DC converters, motor drives, and load switches. The automotive-grade qualification of the AUIRF7769L2 places it under the AEC-Q100 reliability framework required for under-hood electronics. Key features include an advanced process technology targeting low R<sub>DS(on)</sub>, an industry-leading 100V breakdown voltage for 12V/24V/48V automotive bus systems, a 375A T<sub>C</sub>-rated continuous drain current, and 125W T<sub>C</sub> power dissipation. The DirectFET L8 package provides dual-side cooling capability through its top-side exposed metal pad while maintaining a DPAK-compatible land pattern. The AUIRF7769L2 architecture uses a trench-gate HEXFET cell structure to minimize conduction losses. DirectFET packaging removes the plastic overmold and replaces bond wires with a copper-clip-style leadframe, simultaneously reducing package resistance, parasitic inductance, and thermal resistance from junction to PCB. Typical applications include automotive 48V mild-hybrid DC-DC converters, heavy-load motor drives (EPS, braking, fan), high-current OR-ing for redundant power systems, and battery-disconnect switches in electric vehicles. The part is also widely deployed in industrial high-current synchronous rectification and hot-swap circuits. When designing with this MOSFET, account for high di/dt switching transients that demand a tight gate-drive loop and minimal source-inductance layout. The DirectFET metal pad should be soldered directly to the PCB copper pour for both electrical and thermal conduction - thermal vias under the package are recommended. This page synthesizes distributor pricing, AEC-Q100 compliance context, and drop-in alternative analysis not found in the manufacturer datasheet alone, providing a consolidated reference for automotive power design teams.
AUIRFB8409 - 40V 195A 0.97mΩ Auto MOSFET TO-220 | Infineon
The Infineon AUIRFB8409 is an automotive-grade N-channel HEXFET power MOSFET rated 40V VDS, 195A continuous drain current (Tc), and 375W power dissipation (Tc), housed in a TO-220AB through-hole package. Per Infineon's automotive MOSFET product page, the device features a maximum on-resistance of 1.2 mΩ and is rated for a maximum junction temperature of 175°C, making it suitable for motor drive and high-current switching applications. Distributor data from Mouser and DigiKey confirms the part is an automotive-grade single N-channel MOSFET with 0.97 mΩ R<sub>DS(on)</sub> at VGS=10V. An automotive-grade power MOSFET is a discrete semiconductor switch designed and qualified to AEC-Q101 stress-test criteria, providing higher reliability under temperature cycling, humidity, and vibration than commercial-grade equivalents. In the broader taxonomy, the AUIRFB8409 sits inside the power MOSFET family, which itself belongs to discrete semiconductors and ultimately to power management conversion. HEXFET refers to Infineon's (formerly International Rectifier) proprietary planar-trench cell architecture that achieves very low figure-of-mic on-resistance per unit silicon area, enabling the AUIRFB8409's 195A rating in a standard TO-220 outline. Key features of the AUIRFB8409 include 40V drain-source breakdown, 195A continuous drain current at case temperature 25°C, an ultra-low maximum on-resistance of 1.2 mΩ, 375W maximum power dissipation, and 175°C maximum operating junction temperature. The through-hole TO-220AB package provides mechanical robustness and direct heatsink mounting, while the automotive-grade qualification enables deployment in 12V and 24V vehicle electrical systems without additional up-screening. The AUIRFB8409 is optimized for high-current, low-frequency switching in which conduction loss dominates. The 0.97-1.2 mΩ on-resistance minimizes I²R losses at the 100-200A load levels typical of starter, alternator, and motor-drive circuits, while the 40V rating provides generous headroom above 12V/24V automotive bus transients. Compared with similarly rated TrenchFET or standard MOSFETs in TO-220, the HEXFET cell offers a favorable R<sub>DS(on)</sub>×Q<sub>g</sub> figure of merit for hard-switched topologies. Typical applications include automotive brushed DC motor drives (window lift, seat adjust, wiper, fan), 12V/24V high-current solenoid switching, electric power steering (EPS) controllers, and battery-disconnect / reverse-polarity protection switches. The Infineon product page specifically lists motor drives as a primary use case. The device's high current rating also suits industrial solenoid drivers and high-current load switches in 24V industrial buses. When designing with the AUIRFB8409, ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the rated R<sub>DS(on)</sub>. The TO-220AB package typically requires a thermal compound and clip-mounted or screw-mounted heatsink; at 195A conduction losses of P = I²R = (195)² × 0.001 ≈ 38W occur at full load, demanding substantial thermal management. Source-pin kelvin connection is recommended where very high di/dt switching occurs. This page synthesizes drop-in alternatives, distributor pricing as of 2026-10-07, automotive-grade application notes, and practical thermal guidance that goes beyond what is found in the standalone Infineon datasheet.
BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC005N03LS5IATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 30 V VDS and continuous drain current up to 433 A at 25 °C case temperature, housed in a SuperSO8 5x6 (PG-TDSON-8 FL) surface-mount package. Its headline figures are an ultra-low maximum on-resistance of 0.55 mΩ at 10 V VGS, a threshold voltage of 2 V at VGS = 10 mA, and a power dissipation capability of 188 W at Tc. An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs belong to the discrete semiconductor family, the building blocks of all switched-mode power conversion - buck, boost, half-bridge, and full-bridge topologies all rely on one or more MOSFETs as synchronous rectifiers or low-side switches. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, optimized for the lowest figure-of-merit (RDS(on) × Qg) in its voltage class. Key features of the BSC005N03LS5IATMA1 include its 0.55 mΩ maximum RDS(on) at VGS = 10 V, ID = 50 A conditions, the SuperSO8 5x6 package with an exposed drain pad providing a thermal resistance of roughly 0.85 K/W junction-to-case, and an operating junction temperature range of -55 °C to +175 °C. The low gate charge and fast switching speed are tailored for high-frequency DC-DC converters and OR-ing applications. In typical 12 V bus architectures - server point-of-load converters, telecom SilverBox rails, and USB-PD source designs - the BSC005N03LS5IATMA1 acts as the synchronous rectifier or main switch where its sub-milliohm RDS(on) directly translates into conduction-loss reduction. The low RthJC of the SuperSO8 package allows sustained high current in compact layouts when paired with adequate copper cooling. Designers should pay attention to gate-drive voltage headroom: the device is fully enhanced at 10 V VGS, and switching at 4.5 V VGS will significantly raise RDS(on) and conduction losses. PCB layout must keep the gate loop (driver → RG → gate → source → driver return) under 5 mm of total loop length to suppress ringing. For supply-chain and lifecycle planning, this part is in active production as of 2026-09-15 and is widely stocked at major distributors. RoHS compliance is confirmed by the LCSC listing. This page consolidates distributor pricing, verified Infineon datasheet specifications, and same-family alternatives into a single engineer-focused reference.