AFT18H357-24NR6 - 63W LDMOS RF Power Transistor 1.8GHz | NXP
Référence : AFT18H357-24NR6 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1 325,00 |
| 100 | $119 | $11 900,00 |
| 500 | $105 | $52 500,00 |
| 1 000 | $92.5 | $92 500,00 |
AFT18H357-24NR6 Présentation
A Doherty amplifier is a two-path RF power amplifier architecture that uses a carrier amplifier biased in Class AB and a peaking amplifier biased in Class C; the two outputs are combined through a quarter-wave impedance inverter so the carrier amplifier sees an apparent load modulation, keeping efficiency high at 6 to 10 dB output backoff compared with a standard Class AB design. This is why cellular base-station PAs prefer asymmetric or symmetric Doherty structures, and why LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistors dominate macro-cell transmit chains: they offer high gain, high breakdown voltage, and proven reliability at 28 V supplies. The AFT18H357-24NR6 belongs to the broader Airfast 24-series family of N-channel enhancement-mode LDMOS RF power transistors from NXP Semiconductors.
Key features include 63 W typical output power (P3dB-class), 17.5 dB power gain at 1.81 GHz, operation over the 1805-1880 MHz frequency band, 28 V typical drain supply, an integrated ESD protection structure, and an air-cavity ceramic package (OM-1230-4L2L) with a copper-flange heatsink interface. The thermal resistance from junction to case is specified to support continuous-wave RF operation in properly cooled base-station environments. The part is rated MSL-3 (Moisture Sensitivity Level 3) and is supplied in tape-and-reel packaging with a peak reflow temperature of 260 C per JEDEC J-STD-020.
The asymmetric Doherty architecture of the AFT18H357-24NR6 is built around the 28 V LDMOS process, which NXP optimized for cellular base-station linearity and ruggedness. The device integrates input and output matching structures external to the die, and the flanged ceramic package provides a low-inductance source connection through the package mounting flange. Reliability is qualified to the standards typically applied to NXP Airfast RF power products, including high-temperature operating-life and RF overdrive stress profiles.
Typical applications include 4G LTE and 5G NR (sub-6 GHz band 3 / downlink 1805-1880 MHz) macro-cell base-station power amplifiers, multi-carrier GSM and WCDMA transmit chains, asymmetric Doherty final stages in remote radio heads, and high-power amplifier driver or output stages where 28 V LDMOS reliability is required. The 1805-1880 MHz band specifically aligns with international cellular downlink allocations, including the n3 5G NR band and a portion of the PCS/AWS spectrum.
Designers should note that the AFT18H357-24NR6 requires a high-conductivity copper or copper-molybdenum heatsink bolted to the package flange with the recommended torque value, and that the input/output matching networks must be laid out on the PCB laminate following NXP reference design guidance. Using FR4 instead of low-loss PCB material above 1.5 GHz will degrade efficiency.
This page synthesizes distributor pricing, MSL/RoHS qualification data, and practical design notes not consolidated on the manufacturer datasheet, providing a single reference for RF PA design engineers.
Alternatives de remplacement direct pour AFT18H357-24NR6 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
AFT18H357-24SR6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AFT18H356-24NR6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AFT18H356-24SR6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AFT18H357-24N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AFT18H358-24NR6
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
AFT18H357-24NR6 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors |
| Part Number | AFT18H357-24NR6 |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | RF Power Amplifier (Doherty) |
| Frequency Range | 1805 MHz to 1880 MHz |
| Typical Output Power | 63 W (P3dB-class, asymmetric Doherty) |
| Power Gain (typ) | 17.5 dB at 1805 MHz |
| Drain-Source Voltage (typ) | 28 V |
| Drain Current (max, test condition) | 800 mA |
| Boîtier / Format | OM-1230-4L2L (air-cavity ceramic, flanged) |
| Type de montage | Surface Mount / Chassis Mount (flange bolt-down) |
| Niveau de sensibilité à l'humidité (MSL) | 3 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | 260 C |
| Max Time at Peak Reflow | 40 s |
| Terminal Finish | Tin (Sn), e3 per JESD-609 |
| Statut RoHS | Compliant (e3 tin finish) |
| Test Condition Band | Doherty, two-tone / WCDMA stimulus (per datasheet) |
| Family | NXP Airfast 28 V LDMOS RF Power |
Guide de configuration des broches du AFT18H357-24NR6 om-1230-4l2l (air-cavity ceramic, flanged)
Configuration des broches du AFT18H357-24NR6 (boîtier om-1230-4l2l (air-cavity ceramic, flanged)). Ce composant de puissance comporte des bornes de grille, de drain et de source. Pour les boîtiers non polarisés, consultez la fiche technique du fabricant pour l'orientation exacte de la broche 1 et les détails de l'empreinte. Les applications courantes incluent la conception d'alimentations, la commande de moteurs et la commutation de charges.
Aucune donnée de brochage détaillée disponible pour AFT18H357-24NR6.
Consultez la fiche technique pour la configuration complète des broches.
Drain Current vs Drain-Source Voltage Zone de fonctionnement sûr (estimated)
Applications typiques
AFT18H357-24NR6 convient pour 6 applications: 4G LTE / 5G NR Macro Base Station Doherty PA, Multi-Carrier GSM / WCDMA Transmit Chains, Remote Radio Head (RRH) Final-Stage PA, Industrial / Scientific RF Heating (ISM-adjacent 1.8 GHz), Broadband Driver Stage for Higher-Power Doherty PAs, Cellular Repeater / Booster RF Output Stage.
4G LTE / 5G NR Macro Base Station Doherty PA
The AFT18H357-24NR6 is the RF final-stage transistor in 4G LTE and 5G NR sub-6 GHz macro-cell base-station power amplifiers, covering the 1805-1880 MHz band that overlaps the 3GPP n3 downlink. Its 63 W asymmetrical Doherty output and 17.5 dB typical gain let two devices in a balanced configuration deliver up to ~50 dBm composite output in a remote radio head (RRH) or integrated radio. The 28 V LDMOS rail is the industry-standard supply for cellular base-station PAs, simplifying the system power architecture. The OM-1230-4L2L flanged package bolts directly to a copper heatsink, providing the continuous-wave thermal dissipation required by 24/7 carrier-grade base-station deployments. Compared with GaN HEMTs at the same band, the AFT18H357-24NR6 offers lower BOM cost and mature Doherty linearity at the cost of slightly lower peak efficiency.
Recommandé
Multi-Carrier GSM / WCDMA Transmit Chains
Multi-carrier GSM and WCDMA base-station transceivers stack two or three carriers in a single RF power amplifier channel, demanding high linearity plus high efficiency at 6-10 dB output backoff, which is exactly the Doherty operating regime the AFT18H357-24NR6 is built for. With 63 W P3dB-class capability and 17.5 dB gain at 1.81 GHz, the AFT18H357-24NR6 supplies the Doherty carrier/peaking outputs that maintain ACPR and EVM margins while keeping composite efficiency above 40 percent at full multi-carrier drive. The 28 V LDMOS rail aligns with established cellular base-station PSU architectures, reducing the need for level-shifting circuitry. The OM-1230-4L2L ceramic flange provides the rugged thermal path required by macro-cell equipment rated for continuous operation at 50 C ambient.
Recommandé
Remote Radio Head (RRH) Final-Stage PA
Remote Radio Heads (RRHs) mount the RF power amplifier tower-side and must deliver reliable Doherty PA output over a wide outdoor temperature range while tolerating long input cable runs. The AFT18H357-24NR6 fits RRH final-stage PA designs because its OM-1230-4L2L flanged package dissipates Doherty heat directly into the RRH cold-plate or finned heatsink, with an operating life qualified against industry standard RF-stress profiles. At 63 W P3dB in an asymmetric Doherty configuration the device exceeds the typical 10 W to 40 W RRH macro-cell final-stage power envelope, supporting single or dual-PA configurations. The air-cavity ceramic package eliminates the plastic-outgassing risk of organic-mold RF transistor packages in sealed RRH enclosures.
Recommandé
Industrial / Scientific RF Heating (ISM-adjacent 1.8 GHz)
Industrial RF heating and plasma-generation applications operating in the 1.8 GHz band can repurpose cellular Doherty RF transistors, leveraging their high continuous-wave power and Doherty efficiency to drive cavity applicators or load networks. The AFT18H357-24NR6 offers 63 W P3dB-class continuous CW capability at 28 V, well matched to industrial heating system gain and power-range requirements in the 1805-1880 MHz window. The flanged OM-1230-4L2L package is designed for water-cooled or forced-air heatsinks typical of industrial RF heating installations. Designers should adopt the input/output matching networks and bias sequencing described in the NXP reference design; departures from the cellular Doherty board layout risk reducing efficiency and risking device overstress.
Recommandé
Broadband Driver Stage for Higher-Power Doherty PAs
Higher-power Doherty amplifier chains use the AFT18H357-24NR6 as the driver-stage transistor feeding a higher-power final amplifier. At 17.5 dB typical gain, the AFT18H357-24NR6 efficiently steps the small-signal output of a preceding gain block up to a level sufficient to drive a higher-output Airfast final. Used in conjunction with the AFT18H358-24NR6 or higher-output final devices in the same family, this driver-final topology preserves the wideband Doherty 1805-1880 MHz response. The 28 V rail shared by the driver and final simplifies power-sequencing; designers should still provide individual gate-bias networks for the driver and final because carrier/peaking bias differs in Doherty topologies.
Recommandé
Cellular Repeater / Booster RF Output Stage
Cellular signal repeaters and boosters operating in the 1805-1880 MHz cellular downlink band can use the AFT18H357-24NR6 as the high-power output stage where a 28 V LDMOS Doherty architecture is acceptable. The part's 63 W P3dB-class output, combined with a 28 V supply and OM-1230-4L2L flanged ceramic package, suits high-power repeater head-end units that re-broadcast signals in buildings, tunnels, or stadiums. The air-cavity ceramic package provides the ruggedness required by repeater installations that must operate continuously in confined thermal environments. For lower-power repeaters (10 W to 25 W) designers may instead select the AFT18H356-24NR6 for BOM cost savings; for higher-power repeaters, the AFT18H358-24NR6 is the same-package higher-output option.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour AFT18H357-24NR6 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | AFT18H357-24SR6 | AFT18H356-24NR6 | AFT18H356-24SR6 | AFT18H357-24N | AFT18H358-24NR6 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same |
| Package | OM-1230-4L2L | OM-1230-4L2L - same | OM-1230-4L2L - same | OM-1230-4L2L - same | OM-1230-4L2L - same | OM-1230-4L2L - same |
| Frequency Range | 1805-1880 MHz | 1805-1995 MHz (wider) | 1805-1880 MHz (same) | 1805-1995 MHz (wider) | 1805-1880 MHz (same, bulk pack) | 1805-1880 MHz (same band) |
| Drain Supply Voltage (typ) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Architecture | Asymmetric Doherty (LDMOS) | Asymmetric Doherty (LDMOS) | Asymmetric Doherty (LDMOS) | Asymmetric Doherty (LDMOS) | Asymmetric Doherty (LDMOS) | Asymmetric Doherty (LDMOS) |
| MSL (Moisture Sensitivity) | MSL-3 | MSL-3 (assumed same family) | MSL-3 (assumed same family) | MSL-3 (assumed same family) | MSL-3 (assumed same family) | MSL-3 (assumed same family) |
Principaux différenciateurs
- Higher output power (63 W) in the OM-1230-4L2L footprint (vs AFT18H356-24NR6)
- Pin-compatible frequency-band optimization (vs AFT18H357-24SR6)
- Mature 28 V LDMOS process with proven Doherty reliability (vs GaN-on-SiC competing Doherty PAs at 1.8 GHz)
Notes de conception
The AFT18H357-24NR6 in continuous Doherty operation dissipates significant heat at the flange and MUST be bolted to a high-conductivity copper or copper-molybdenum heatsink using the NXP-recommended torque, with a thin layer of thermal interface material. Estimated: at 63 W Doherty output at ~40 percent composite efficiency, the device wastes ~95 W of DC input; the datasheet's junction-to-case thermal resistance (refer to AFT18H357-24N datasheet) governs heatsink sizing. For base-station RRH applications, design the cold-plate assuming 50 C ambient and a junction-to-case delta allowing continuous operation.
Use low-loss PCB laminate such as Rogers RO4350B or equivalent for the carrier and peaking reference designs above 1.5 GHz. FR4 will measurably degrade efficiency and Doherty linearity at 1805 MHz. The device flange is the RF ground and source return path; ensure the bolt-down pattern maintains full metal-to-metal contact. Place the gate-bias decoupling capacitors within 1-2 mm of the gate leads and route the drain modulation lines with controlled impedance matching the 50-ohm reference plane described in the NXP reference design.
The asymmetric Doherty topology requires precise quarter-wave transmission-line lengths (electrical length at the operating band center) in the combining network; deviations of 5 percent or more shift the backoff efficiency peak and reduce linearity. Estimated: at 1805 MHz a quarter-wave on RO4350B is roughly 27 mm; at 1995 MHz it shrinks to roughly 24 mm for the wider-band -SR6 variant. Keep the input splitter and output combiner physically symmetric to maintain carrier/peaking amplitude and phase balance, and add tuning features (e.g., stub lines) for production trimming.
Three pitfalls are common when bringing up a Doherty PA based on the AFT18H357-24NR6: (1) using FR4 instead of low-loss laminate degrades efficiency; (2) failing to dry-bake the MSL-3 ceramic package per JEDEC J-STD-033 results in package cracking at reflow; (3) under-torquing the flange bolt-down creates high thermal resistance and overheating. Additionally, never operate the device without proper gate-bias sequencing - the carrier and peaking gates must be sequenced to avoid crossing through the linear-amplification region without bias, which can trigger destructive oscillation.
Informations de conformité
RoHS compliant per JESD-609 e3 tin terminal finish (per Vyrian third-party listing). AEC-Q100 not applicable (this is a discrete RF power transistor, not an automotive-grade IC). REACH and conflict-minerals status assumed compliant as standard NXP Airfast product family compliance - verify against the manufacturer's latest declaration of conformity before qualification.
