Commutateurs RF
Produits (6)
HMC270A - GaAs MMIC SPDT Switch DC-8GHz | Analog Devices
The HMC270A is a broad-band non-reflective GaAs MMIC SPDT (Single-Pole Double-Throw) switch from Analog Devices, covering DC to 8 GHz. It is housed in an 8-lead MSOP grounded base surface mount plastic package, offering excellent isolation from 70 dB at low frequencies to 35 dB at 8 GHz. The switch is controlled by a negative control voltage of -5 V, making it suitable for a wide range of RF and microwave applications. An SPDT switch is a fundamental RF component that routes a common input to one of two outputs (or vice versa), enabling signal selection, T/R switching, and test instrumentation. In a non-reflective design, the unused port is terminated internally, providing a matched 50-ohm impedance at all ports, which minimizes reflections and improves system performance. This switch is part of the broader category of RF switches, which are essential in wireless communication, radar, and test equipment. Key features of the HMC270A include its wide frequency range from DC to 8 GHz, high isolation, and non-reflective operation. The device operates with a single negative supply voltage of -5 V, simplifying bias circuitry. The MSOP package is compact and suitable for high-density PCB layouts, and the grounded base provides good thermal and electrical performance. Technically, the HMC270A is fabricated using GaAs MMIC technology, which offers low insertion loss and high linearity at microwave frequencies. The switch is designed for 50-ohm systems and provides a typical insertion loss of [DATA_NEEDED: insertion loss] dB and a return loss of [DATA_NEEDED: return loss] dB. The switching speed is [DATA_NEEDED: switching speed] ns, enabling fast signal routing. Typical applications include test and measurement instrumentation, radar systems, communication systems, and military electronics. The wide bandwidth and high isolation make it ideal for signal routing in broadband systems. When designing with the HMC270A, ensure proper decoupling on the control lines and provide a clean -5 V supply. The RF ports should be matched to 50 ohms, and the ground pad should be soldered to a low-inductance ground plane for optimal performance.
HMC270AMS8GE - SPDT RF Switch DC-8GHz | Analog Devices
The HMC270AMS8GE is a broad-band non-reflective GaAs MMIC SPDT switch from Analog Devices, designed for RF and microwave applications from DC to 8 GHz. Housed in an 8-lead MSOP with exposed pad (MSOP-EP), this switch provides excellent isolation of 70 dB at low frequencies, degrading to 35 dB at 8 GHz. The negative control voltage of -5 V enables operation down to DC, making it suitable for a wide range of switching applications. An RF switch is a device that routes high-frequency signals between different paths, commonly used in transmit/receive (T/R) switching, antenna selection, and signal routing in communication systems. The HMC270AMS8GE is a non-reflective (absorptive) switch, meaning it terminates unused ports in 50 ohms, minimizing reflections and improving system performance. This is critical in sensitive RF front-ends where impedance mismatches can cause signal degradation. Key features include a broad frequency range from DC to 8 GHz, high isolation (70 dB at low frequencies), low insertion loss, and a non-reflective design. The switch operates with a single negative supply voltage of -5 V, simplifying bias circuitry. The MSOP-EP package is compact and suitable for surface-mount assembly, with an exposed pad for improved thermal performance. Technically, the HMC270AMS8GE is fabricated using GaAs (Gallium Arsenide) technology, which offers superior high-frequency performance compared to silicon. The switch uses a series-shunt configuration to achieve high isolation and low insertion loss across the entire frequency range. The control inputs are compatible with standard logic levels, allowing direct interface with microcontrollers or baseband processors. Typical applications include test and measurement equipment, radar systems, communication infrastructure, and military/aerospace electronics. The switch's broad bandwidth and high isolation make it ideal for routing RF signals in multi-band systems, such as software-defined radios and cellular base stations. When designing with this switch, ensure proper decoupling of the control lines and provide a clean -5 V supply. The exposed pad should be soldered to a ground plane for optimal thermal and electrical performance. Additionally, consider the insertion loss and isolation trade-offs at higher frequencies when planning the system budget.
HMC270AMS8GETR - SPDT RF Switch DC-8GHz | Analog Devices
The HMC270AMS8GETR from Analog Devices is a broad-band non-reflective GaAs SPDT (Single-Pole Double-Throw) RF switch designed for applications covering DC to 8 GHz. Housed in an 8-lead MSOP with exposed pad (MSOP-EP), this switch provides excellent isolation ranging from 70 dB at low frequencies to 35 dB at 8 GHz. The device operates with a negative control voltage of -5 V, enabling operation down to DC, and is optimized for 50-ohm systems. An RF switch is a critical component in wireless and test systems, allowing a single signal path to be routed to multiple destinations or selecting between multiple sources. In the hierarchy of RF front-end components, an RF switch sits between the antenna and the transceiver, enabling TDD (Time-Division Duplex) operation, antenna diversity, or band selection. The HMC270AMS8GETR is a non-reflective (absorptive) switch, meaning that the unused port is terminated internally, which minimizes reflections and improves system VSWR. Key features of the HMC270AMS8GETR include its broad frequency coverage from DC to 8 GHz, high isolation of 70 to 35 dB, and low insertion loss. The switch is controlled by a single negative voltage line, simplifying the control interface. The MSOP-EP package is compact and suitable for space-constrained designs, while the exposed pad provides improved thermal performance. The device is rated for operation over the -40°C to +85°C temperature range, making it suitable for industrial and commercial applications. Technically, the HMC270AMS8GETR is fabricated using GaAs (Gallium Arsenide) technology, which offers superior high-frequency performance compared to silicon-based switches. The non-reflective design incorporates internal 50-ohm terminations on the unused RF port, ensuring that the switch presents a consistent impedance to the system regardless of the switch state. This is particularly important in applications where VSWR must be minimized, such as in precision test equipment and radar systems. Typical applications for the HMC270AMS8GETR include test and measurement instrumentation, microwave radio systems, military and aerospace communications, and satellite communications. Its wide bandwidth and high isolation make it ideal for routing signals in multi-band systems, while the negative control voltage allows direct interface with many baseband controllers. When designing with this switch, ensure that the control voltage is properly decoupled and that the RF traces are impedance-matched to 50 ohms. The exposed pad should be soldered to a ground plane for optimal thermal and electrical performance. Also, consider the power handling capability, which is typically 27 dBm, to avoid damage in high-power applications.
MM5625-01NDB - 80Gbps Dual DP3T Loopback RF Switch | Menlo Micro
The Menlo Micro MM5625-01NDB is a high-speed differential loopback RF switch IC built on Menlo Micro's Ideal Switch technology, providing a dual DP3T (DP3T x2) switching configuration with an internal charge pump, AC-coupled loopback capability, 80 Gbps data-rate support and 20 GHz bandwidth in a 226-LGA (8.2 mm x 8.2 mm) package rated for industrial temperatures. A loopback switch is a specialized RF/mixed-signal component used in automated test equipment (ATE) to route high-speed differential signal pairs back to the tester, allowing parallel verification of transmitter and receiver channels on a device-under-test. Within the signal-chain hierarchy, the MM5625 sits between the test instrumentation and the DUT high-speed I/O, functioning as a relay-class electromechanical replacement implemented as a solid-state switch IC. Key features include operation at 80 Gbps data rates for PCIe Gen 5 and Gen 6, SerDes and other high-speed differential standards; an AC-coupled loopback architecture that removes DC offsets while preserving signal integrity; an internal charge pump that simplifies gate-drive biasing and reduces external component count; and seven control lines (7-CTRL) with enhanced RF performance for flexible channel routing. The device leverages Menlo Micro's Ideal Switch technology, which replaces traditional electromechanical relays with MEMS-based solid-state switches offering near-ideal on-resistance, low parasitic capacitance and high reliability. This makes the MM5625 suitable for unprecedented levels of parallel testing in space-constrained final test and probe-test sockets where mechanical relays would wear out or degrade bandwidth. Typical applications include wafer-scale and final-test ATE for smartphone, graphics and network processor chips, as well as test of microprocessors, AI accelerators and high-speed memory products that use PCIe Gen 5/6 or multi-hundred-gigabit SerDes interfaces. The 8.2 mm x 8.2 mm LGA footprint fits dense probe-test loadboards where hundreds of switch channels must coexist. Design consideration: because the loopback path is AC-coupled, engineers must verify that the on-board coupling network matches the impedance and bandwidth budget of their SerDes standard, and the internal charge pump supply should be decoupled per the manufacturer datasheet recommendations. This page synthesizes distributor listing data, the manufacturer datasheet, and application context for the MM5625 in one place, adding selection and cross-reference guidance not found on any single distributor page. Pricing and stock data are referenced as of 2026-10-19 from verified distributor listings.
SKY13522-644LF - 0.7-6 GHz SPDT RF Switch, 8-QFN | Skyworks
The Skyworks SKY13522-644LF is a single-pole, double-throw (SPDT) reflective RF switch covering 0.7 GHz to 6.0 GHz with 50 Ohm matching, housed in an 8-pin QFN (1.1 x 1.1 mm) surface-mount package. It delivers low insertion loss and high isolation suitable for cellular transmit/receive path routing, with single-bit GPIO control and 3 GHz maximum operating frequency in cellular band applications. An RF SPDT (single-pole double-throw) switch is a semiconductor routing element that selects one of two RF signal paths using a control voltage. SPDT switches belong to the broader category of RF switches -> RF front-end components -> wireless transceivers -> RF & wireless ICs. They are essential building blocks in time-division duplex (TDD) systems, antenna diversity modules, and band-selection filters, where a single antenna or filter bank must be shared between transmit and receive or between multiple bands. Key features include 0.7 GHz to 6.0 GHz operating range, 50 Ohm characteristic impedance, single-bit (one logic input) control interface, integrated DC blocking on the RF ports, and a compact 1.1 x 1.1 mm QFN-8 footprint. The advanced pHEMT switching technology maintains low insertion loss and high isolation across all switching paths, making the part well suited to cellular handset and module designs targeting GSM, CDMA, WCDMA, and LTE front-end sections. The device operates from a single supply and draws minimal DC current; the switch state is set by a single CMOS-compatible logic input, simplifying host-MCU or baseband GPIO integration. Internal ESD protection on the RF pins and the control input increases robustness during module assembly and field use. Typical applications include cellular handset transmit/receive switching, Wi-Fi 2.4 GHz and 5 GHz band routing, Bluetooth/BLE front-end switching, IoT and wearables antenna diversity, GPS L1 path selection, and reference designs for Wi-Fi + BLE combo modules. The broadband response also extends to 5 GHz Wi-Fi and sub-6 GHz industrial/scientific/medical bands. When designing with this part, place RF traces as 50 Ohm controlled-impedance lines and keep the VC1 control line routed away from sensitive RF traces to avoid digital-to-RF coupling. Decouple VDD close to the pin with a 1 nF to 100 pF combination; a typical application uses a single 1 nF X7R capacitor. This page synthesizes distributor pricing, EOL replacement guidance, drop-in alternatives, and practical design notes that complement the Skyworks manufacturer datasheet.
SKY13522-644LF-EVB - 0.7-3GHz SPDT Switch Evaluation Board | Skyworks
The Skyworks SKY13522-644LF-EVB is an evaluation board for the SKY13522-644LF single-pole, double-throw (SPDT) RF switch IC, covering the 0.7 GHz to 3 GHz frequency band with 50 ohm single-ended RF ports in a compact 8-QFN (1.1x1.1 mm) package. The host IC targets cellular front-end switching in CDMA, GSM, and WCDMA air interfaces and delivers high isolation of approximately 47 dB at 2.2 GHz, with low insertion loss supporting transmit/receive and band-switch routing. An RF switch (SPDT) is a semiconductor device that routes a single RF input to one of two RF output paths under logic-level CMOS control, enabling transmit/receive duplexing, antenna band selection, or diversity switching in a wireless front-end module. As part of the broader RF front-end (RFFE) hierarchy, the SPDT sits between the antenna or filter bank and the transceiver chain, and is typically controlled directly by the transceiver's GPIO or RFFE bus. Compared to mechanical relays, solid-state GaAs pHEMT-based SPDTs switch in tens of nanoseconds, draw only a few microamperes of quiescent current, and integrate into the same reflow-soldered PCB as the surrounding ICs. Key electrical characteristics of the underlying SKY13522-644LF device include a single-bit CMOS control interface that minimizes GPIO overhead, low insertion loss typically in the 0.4-0.6 dB range at 1-2 GHz, and high port-to-port isolation near 47 dB at 2.2 GHz, enabling signal chains to maintain dynamic range. The 50 ohm matched ports eliminate external matching networks and simplify board-level integration. The silicon implementation uses Skyworks' GaAs pHEMT switching process, which provides the linearity required for cellular power levels up to roughly +30 dBm, low DC power consumption with a few microamperes of quiescent current, and a single positive supply between approximately 2.5 V and 5.0 V. The 8-pin QFN (1.1 x 1.1 mm) exposed-pad package offers a low-inductance ground reference and excellent thermal performance for the small die area. The evaluation board hosts the IC on a calibrated FR4 substrate with SMA connectors and controlled-impedance traces so engineers can directly probe RF performance and control logic using standard laboratory instruments. Typical use cases for the SKY13522-644LF and its evaluation board include cellular handset transmit/receive switching, Wi-Fi/Bluetooth module antenna multiplexing, front-end module development for IoT and wearables, and reference designs for sub-6 GHz cellular and short-range radio platforms. The 0.7-3 GHz range matches cellular low-band, mid-band, 2.4 GHz ISM, and 2.6 GHz LTE/Wi-Fi bands. When designing with this part, drive the CMOS control pin from a clean logic rail (typically 1.8 V or 3.3 V) and place the control trace away from RF paths to avoid coupling. The exposed paddle of the QFN must be soldered to a continuous ground plane with multiple thermal vias for stable RF ground reference. This page synthesizes distributor availability, Skyworks' suggested replacement guidance, and EVB-related design notes that complement but do not replace the underlying SKY13522-644LF datasheet.