1ED3890MC12MXUMA1 vs 1ED3142MC12HXUMA1 Comparaison
Comparaison détaillée côte à côte de 1ED3890MC12MXUMA1 par Infineon et 1ED3142MC12HXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | 1ED3890MC12MXUMA1 | 1ED3142MC12HXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,30 | $1,32 |
| Isolation Voltage (Vrms) | 5700 Vrms | — |
| Peak Output Current (Source/Sink) | ±9 A | — |
| Number of Channels | 1 | 1 |
| Configuration de sortie | High-Side Non-Inverting | — |
| Boîtier | PG-DSO-16-28 (16-pin wide-body DSO) | PG-DSO-8 (PG-LDSO-8-1) |
| Type de montage | Surface Mount (Tape & Reel) | Surface Mount |
| Isolation Technology | Coreless transformer (galvanic) | Coreless transformer (galvanic) |
| Configurable Interface | I2C (DESAT, UVLO, drive voltage) | — |
| Protection Features | DESAT short-circuit, Active Miller clamp, Soft Turn-Off (STO), UVLO | — |
| Target Power Devices | IGBT, SiC MOSFET, MOSFET | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | — |
| Common-Mode Transient Immunity (CMTI) | [DATA_NEEDED: CMTI rating] | — |
| Supply Voltage (VCC side) | [DATA_NEEDED: VCC range] | — |
| Output Drive Voltage (VOUT) | [DATA_NEEDED: VOUT range] | — |
| Statut RoHS | Compliant | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | 1ED3142MC12HXUMA1 |
| Product Family | — | EiceDRIVER X3 Compact |
| Driver Type | — | Isolated single-channel gate driver |
| Isolation Voltage | — | 3000 Vrms |
| Nombre de sorties | — | 2 (separate source/sink) |
| Configuration | — | Inverting, Non-Inverting |
| Source Drive Current | — | 6 A |
| Sink Drive Current | — | 6.5 A |
| Maximum Rise Time | — | 20 ns |
| Maximum Fall Time | — | 20 ns |
| Propagation Delay (typ.) | — | 40 ns |
| Supported Switches | — | IGBT, MOSFET, SiC MOSFET |
| EU RoHS | — | Compliant |
| Part Status | — | Active |
| ECCN | — | EAR99 |