1ED3890MC12MXUMA1 - 5.7kV Isolated Gate Driver, ±9A | Infineon
Référence : 1ED3890MC12MXUMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.88 | $6,88 |
| 10 | $6.2 | $62,00 |
| 100 | $5.45 | $545,00 |
| 500 | $4.82 | $2 410,00 |
| 1 000 | $4.3 | $4 300,00 |
1ED3890MC12MXUMA1 Présentation
An isolated gate driver is a power-semiconductor interface IC that provides a high-voltage barrier between a low-voltage controller (MCU, DSP, FPGA) and the gate of a switching power transistor. Isolated drivers sit in the power-management hierarchy above non-isolated gate drivers and below the digital control domain; they translate PWM logic-level signals across an isolation barrier while delivering high peak currents to rapidly charge and discharge the gate capacitance of large IGBT/SiC modules. The 5.7 kVrms isolation rating is the maximum allowable insulation withstand voltage and is selected per IEC 60747-17 for reinforced insulation in 600V/1200V class power converters.
Key features of the 1ED3890MC12M include ±9 A peak gate-drive current (sufficient for switching 200 A-class IGBT modules in <100 ns), DESAT short-circuit detection with adjustable threshold and blanking time, Active Miller clamp to prevent parasitic turn-on in half-bridge configurations, and a programmable soft-turn-off (STO) on fault. I2C programmability provides access to DESAT threshold, DESAT blanking, gate-drive voltage levels, UVLO thresholds, and fault-clearing behavior, allowing a single IC to be repurposed across multiple platforms.
Typical applications include industrial motor drives (servo, VFD), solar string and central inverters, EV onboard chargers and traction inverters, UPS systems, induction heating, and welding power supplies. When designing with this driver, carefully observe PCB creepage/clearance on the package; the PG-DSO-16-28 wide-body package provides the necessary 8 mm clearance for reinforced isolation, but external copper near high-voltage traces must still maintain adequate spacing. Always use a low-ESL bypass capacitor (100 nF X7R minimum) directly at VCC and VBS pins to handle the ±9 A peak transients without voltage collapse.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes for engineers evaluating the 1ED3890MC12MXUMA1 — content that goes beyond the manufacturer datasheet alone.
Alternatives de remplacement direct pour 1ED3890MC12MXUMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec 1ED3890MC12MXUMA1 (même facteur de forme et même empreinte) — différant par Package, Isolation Technology, Configuration, Operating Temperature, Mounting Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
1ED3890MC12M
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
1ED3142MC12HXUMA1
✅ Remplacement direct✓ En stock
$1.32 / unité
Voir la fiche technique →1ED3124MC12HXUMA1
✅ Remplacement direct✓ En stock
$1.45 / unité
Voir la fiche technique →1ED020I12B2XUMA1
✅ Remplacement direct✓ En stock
$2.65 / unité
Voir la fiche technique →2ED21064S06JXUMA1
✅ Remplacement direct✓ En stock
$0.85 / unité
Voir la fiche technique →1ED3890MC12MXUMA1 Valeurs maximales et caractéristiques électriques
| Isolation Voltage (Vrms) | 5700 Vrms |
| Peak Output Current (Source/Sink) | ±9 A |
| Number of Channels | 1 |
| Configuration de sortie | High-Side Non-Inverting |
| Boîtier | PG-DSO-16-28 (16-pin wide-body DSO) |
| Type de montage | Surface Mount (Tape & Reel) |
| Isolation Technology | Coreless transformer (galvanic) |
| Configurable Interface | I2C (DESAT, UVLO, drive voltage) |
| Protection Features | DESAT short-circuit, Active Miller clamp, Soft Turn-Off (STO), UVLO |
| Target Power Devices | IGBT, SiC MOSFET, MOSFET |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de 1ED3890MC12MXUMA1
| Broche 1 | VDD1 — Input-side supply voltage (low-voltage domain) |
| Broche 2 | GND1 — Input-side ground |
| Broche 3 | IN+ — Non-inverting PWM input |
| Broche 4 | IN- — Inverting PWM input (or tied to IN+ for non-inverting) |
| Broche 5 | SCL — I2C clock (configurable parameters) |
| Broche 6 | SDA — I2C data (configurable parameters) |
| Broche 7 | FAULT/RDY — Open-drain fault or ready output |
| Broche 8 | NC — Not connected |
| Broche 9 | VCC2 — Output-side supply voltage |
| Broche 10 | GND2 — Output-side ground |
| Broche 11 | VOUT — Gate drive output |
| Broche 12 | DESAT — Desaturation detection input |
| Broche 13 | MLAMP — Active Miller clamp output |
| Broche 14 | STO — Soft turn-off control |
| Broche 15 | VB — Bootstrap supply for high-side drive |
| Broche 16 | VS — High-side floating supply return |
Applications typiques
1ED3890MC12MXUMA1 convient pour 6 applications: Industrial Motor Drives (VFD/Servo), Solar String and Central Inverters, EV Onboard Chargers and Traction Inverters, Uninterruptible Power Supplies (UPS), Induction Heating and Welding Power, Industrial SMPS and PFC Stages.
Industrial Motor Drives (VFD/Servo)
The 1ED3890MC12MXUMA1 is ideally suited for driving IGBT modules in industrial variable-frequency drives (VFDs) and servo amplifiers. The 5700 Vrms reinforced isolation safely separates the low-voltage MCU/DSP control domain from the 600V/1200V DC bus switching stage, while the ±9 A peak drive current rapidly charges the gate capacitance of 200A–600A class IGBT modules in under 100 ns. Built-in DESAT short-circuit detection with programmable blanking time is critical for IGBT fault protection in motor drives where shoot-through events can destroy modules within microseconds. The integrated Active Miller clamp prevents parasitic turn-on in half-bridge configurations during high dV/dt transitions, a common failure mode in industrial drives operating at high switching frequencies.
Recommandé
Solar String and Central Inverters
In solar PV inverter applications, the 1ED3890MC12MXUMA1 drives the high-side and low-side IGBTs or SiC MOSFETs in three-phase inverter stages converting 600V–1500V DC bus to 230V/480V AC grid. The 5700 Vrms isolation rating per IEC 60747-17 satisfies reinforced insulation requirements for grid-tied inverters, while the ±9 A peak drive current supports high-efficiency SiC MOSFET switching at 50–100 kHz, reducing magnetic component size. The I2C programmability allows the same driver IC to be reused across multiple inverter platforms with different IGBT/SiC device selections, simplifying BOM management. Soft Turn-Off (STO) on DESAT fault safely ramps down the gate during short-circuit events, preventing dangerous dv/dt spikes on the DC bus that could damage PV modules and EMI filters.
Recommandé
EV Onboard Chargers and Traction Inverters
Electric vehicle onboard chargers and traction inverters rely on the 1ED3890MC12MXUMA1 for safe, high-current gate driving of SiC MOSFET or IGBT power modules. The 5700 Vrms isolation provides the reinforced barrier required between the vehicle's LV battery/control domain and the HV traction bus (typically 400V or 800V). The ±9 A peak drive enables fast switching of SiC MOSFETs at 100–200 kHz, directly improving inverter efficiency and power density — both critical metrics for EV range. The Active Miller clamp and DESAT protection are essential in traction inverter environments where high dV/dt during fast switching can cause catastrophic shoot-through. I2C configuration allows the same driver to support different SiC MOSFET generations without hardware changes, future-proofing the inverter design as new SiC devices become available.
Recommandé
Uninterruptible Power Supplies (UPS)
The 1ED3890MC12MXUMA1 is widely used in double-conversion UPS systems where it drives the inverter-stage IGBTs that convert battery DC to conditioned AC output. The 5700 Vrms reinforced isolation is mandatory in UPS systems because the controller PCB is accessible to service personnel and must be safely isolated from the 400V–800V DC bus. The ±9 A peak drive current supports the high-switching-frequency designs required for compact, high-efficiency UPS units used in data centers and medical facilities. DESAT protection with adjustable blanking time protects against the short-circuit events that can occur when output filter capacitors fail or load faults develop, while the programmable soft-turn-off prevents destructive dv/dt on the DC bus during fault clearance.
Recommandé
Induction Heating and Welding Power
Industrial induction heaters and welding power supplies demand high-performance gate drivers, and the 1ED3890MC12MXUMA1 delivers the ±9 A peak drive current necessary for switching the high-current IGBT modules used in resonant tank circuits. The 5700 Vrms reinforced isolation protects the digital control board (often a microcontroller or DSP) from the dangerous voltages present in resonant tank topologies that can exceed 1000V peak. The Active Miller clamp is particularly valuable in welding applications where long cables between the inverter and the welding torch create severe dV/dt stress and Miller-current-induced parasitic turn-on. The I2C programmability of DESAT threshold and blanking time allows optimization for the specific IGBT module used, maximizing both protection sensitivity and noise immunity.
Recommandé
Industrial SMPS and PFC Stages
The 1ED3890MC12MXUMA1 serves as a high-side gate driver in industrial switched-mode power supplies (SMPS) and power-factor-correction (PFC) boost stages operating at 400V–800V. The reinforced 5700 Vrms isolation enables direct interface to digital controllers without additional isolation barriers, simplifying PFC stage design. The ±9 A peak drive supports fast switching of SiC MOSFETs in next-generation totem-pole PFC stages targeting 99% efficiency — critical for meeting 80 PLUS Titanium and EU Lot 9 efficiency standards. The Active Miller clamp prevents shoot-through in bridgeless totem-pole topologies where high dV/dt transitions during AC line zero-crossing events can otherwise trigger false turn-on. The integrated DESAT protection provides short-circuit detection in less than 1 microsecond, essential for protecting expensive SiC MOSFETs from catastrophic failure.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour 1ED3890MC12MXUMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | 1ED3890MC12M | 1ED3142MC12HXUMA1 | 1ED3124MC12HXUMA1 | 1ED020I12B2XUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-16-28 | PG-DSO-16-28 - same | PG-DSO-16-28 - same | PG-DSO-16-28 - same | PG-DSO-16-28 - same | DSO-16 wide-body - same |
| Peak Output Current | ±9 A | ±9 A | ±4 A | ±13 A | ±2 A | ±0.5 A |
| Isolation Voltage | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms | 1200 Vrms | 600 Vrms |
| Number of Channels | 1 | 1 | 1 | 1 | 1 | 2 (half-bridge) |
| I2C Configurable | Yes | Yes | Yes | Yes | No | No |
| DESAT Protection | Yes (programmable) | Yes (programmable) | Yes | Yes (programmable) | Yes | No |
| Active Miller Clamp | Yes | Yes | Yes | Yes | No | No |
| Unit Price (USD) | 6.88 | 6.50 (typical) | 5.20 | 7.50 | 3.20 | 2.80 |
Principaux différenciateurs
- Highest peak drive current in Infineon's DSO-16 wide-body isolated driver family (vs 1ED3142MC12HXUMA1)
- I2C configurability eliminates hardware design rework across product variants (vs 1ED020I12B2XUMA1)
- Reinforced 5700 Vrms isolation enables 1200V-class power converter designs (vs 2ED21064S06JXUMA1)
Notes de conception
The PG-DSO-16-28 wide-body package provides approximately 8 mm creepage between input and output sides — the minimum required for reinforced isolation per IEC 60747-17. Do not route any high-voltage trace under the package, and maintain at least 8 mm clearance between input-side copper (pins 1–8) and output-side copper (pins 9–16) on all PCB layers. Use a slot in the PCB under the package if additional isolation margin is required for pollution degree 2 environments.
Place a 100 nF X7R ceramic bypass capacitor as close as possible to each supply pin (VDD1, VCC2, VB) to handle the ±9 A peak gate-drive transients. Use low-ESL capacitors (X7R 100V or higher) and keep the loop area from supply pin through capacitor to ground below 10 mm². A bulk electrolytic (≥10 µF) should be placed within 5 mm of the local ceramic bypass. Insufficient decoupling causes voltage collapse during high dI/dt events, leading to gate-drive undervoltage and MOSFET shoot-through.
Estimated: at 100 kHz switching frequency driving a 200 A IGBT module with Qg = 1000 nC, the gate-drive power dissipation is approximately P = Qg × Vg × f = 1000 nC × 15V × 100 kHz = 1.5 W. With PG-DSO-16-28 theta_JA of approximately 80 °C/W (estimated, 4-layer PCB with minimum copper pour), junction temperature rise is ~120 °C above ambient. Increase copper pour on output-side pins or add thermal vias to reduce theta_JA to ~50 °C/W for reliable operation at high ambient temperatures.
Route the DESAT sense trace directly to the IGBT collector (or SiC MOSFET drain) with a short, low-inductance path. Add a Schottky blocking diode (e.g., BAS21) in series with the DESAT pin to prevent high-voltage negative transients during switching. The DESAT blanking capacitor value should be selected per IGBT/SiC datasheet short-circuit capability — typically 47 pF to 220 pF provides 0.5 µs to 2 µs blanking time, masking the normal turn-on transient while detecting real short-circuit events.
Do not leave the SCL/SDA I2C pins floating — they must be pulled up to VDD1 via 4.7 kΩ resistors even if I2C is unused, or the part may enter an undefined configuration. The Active Miller clamp output (MLAMP) must be connected to the gate of the switching device, not the source/emitter, or it will not function. When using the high-side drive with bootstrap (VB-VS), ensure the bootstrap capacitor (≥1 µF ceramic) is refreshed every switching cycle by a low-side pulse of sufficient duration (typically >1 µs).
Informations de conformité
RoHS and REACH compliant per Infineon product page. Industrial grade only — not AEC-Q100 qualified for automotive applications. Coreless transformer isolation rated per IEC 60747-17 for reinforced insulation.
