1N5711 vs BAT42-TAP Comparaison

Comparaison détaillée côte à côte de 1N5711 par STMicroelectronics et BAT42-TAP par Vishay Intertechnology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Vishay Intertechnology
BAT42-TAP BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP ✓ Actif

Comparaison des spécifications

Paramètre 1N5711 BAT42-TAP
Marque STMicroelectronics Vishay Intertechnology
Catégorie Diodes Diodes
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,18 $0,04
Diode Type Small-signal Schottky barrier (RF) diode Small-Signal Schottky Barrier
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW —
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: forward voltage at rated current]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Boîtier DO-35 (DO-204AH) hermetic axial-lead glass DO-204AH (DO-35) glass axial
Type de montage Through-Hole Through Hole
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
Statut RoHS Compliant Compliant
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Average Forward Current (IF(AV)) — 200 mA
Non-Repetitive Surge Current (IFSM) — 4.0 A
Reverse Recovery — Fast switching (Schottky, no stored charge)
Junction Capacitance — [DATA_NEEDED: diode capacitance]
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage at rated VR]
Termination Style — Axial Leads
Packaging Suffix — -TAP (Ammo tape packing)
Configuration — Single Diode
Protection Feature — PN junction guard ring against ESD / excessive voltage
AEC-Q101 Option — Qualified version available on request
Mounting Technology — Wave solder / hand solder

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