1N5711 vs BAT42-TAP 비교

다음의 상세 나란히 비교: 1N5711 제조: STMicroelectronics 및 BAT42-TAP 제조: Vishay Intertechnology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Vishay Intertechnology
BAT42-TAP BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP ✓ 활성

사양 비교

파라미터 1N5711 BAT42-TAP
브랜드 STMicroelectronics Vishay Intertechnology
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.18 $0.04
Diode Type Small-signal Schottky barrier (RF) diode Small-Signal Schottky Barrier
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW —
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: forward voltage at rated current]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
패키지 DO-35 (DO-204AH) hermetic axial-lead glass DO-204AH (DO-35) glass axial
실장 유형 Through-Hole Through Hole
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
RoHS 상태 Compliant Compliant
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Average Forward Current (IF(AV)) — 200 mA
Non-Repetitive Surge Current (IFSM) — 4.0 A
Reverse Recovery — Fast switching (Schottky, no stored charge)
Junction Capacitance — [DATA_NEEDED: diode capacitance]
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage at rated VR]
Termination Style — Axial Leads
Packaging Suffix — -TAP (Ammo tape packing)
Configuration — Single Diode
Protection Feature — PN junction guard ring against ESD / excessive voltage
AEC-Q101 Option — Qualified version available on request
Mounting Technology — Wave solder / hand solder

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청