ADS4129IRGZ25 vs ADS6149IRGZ25 Comparaison
Comparaison détaillée côte à côte de ADS4129IRGZ25 par Texas Instruments et ADS6149IRGZ25 par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Texas Instruments
ADS4129IRGZ25 - 12-Bit 250MSPS Ultra-Low-Power ADC | Texas Instruments
ADS4129IRGZ25 ✓ ActifTexas Instruments
ADS6149IRGZ25 - 14-Bit 250MSPS Low-Power ADC | Texas Instruments
ADS6149IRGZ25 ✓ ActifComparaison des spécifications
| Paramètre | ADS4129IRGZ25 | ADS6149IRGZ25 |
|---|---|---|
| Marque | Texas Instruments | Texas Instruments |
| Catégorie | ADC/DAC | ADC/DAC |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $19,45 | $20,85 |
| Résolution | 12 bit | 14 bits |
| Number of Channels | 1 | 1 |
| Architecture | Pipelined | Pipelined |
| Sample Rate (max) | 250 MSPS | — |
| Analog Supply Voltage | 1.8 V | 1.8 V |
| Digital Supply Voltage | 1.8 V to 3.3 V | — |
| Input Type | Differential / Single-ended | Differential / Single-ended |
| Digital Output Interface | LVDS DDR / Parallel CMOS | — |
| Reference Type | Internal (external optional) | — |
| Input Bandwidth | [DATA_NEEDED: full-power input bandwidth] | — |
| SNR | [DATA_NEEDED: SNR at fIN = 170 MHz] | — |
| SFDR | [DATA_NEEDED: SFDR at fIN = 170 MHz] | — |
| ENOB | [DATA_NEEDED: ENOB at fIN = 170 MHz] | — |
| Power Consumption (250 MSPS) | [DATA_NEEDED: total power at 250 MSPS] | — |
| Plage de température de fonctionnement | -40 C to +85 C (Industrial) | -40 °C to +85 °C (Industrial) |
| Boîtier | 48-VQFN (RGZ) 7x7 mm | 48-VQFN (RGZ) 7x7 mm |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 3 (per TI qualification, [DATA_NEEDED: exact JEDEC floor life]) |
| Statut RoHS | Compliant | Compliant |
| Sample Rate (Max) | — | 250 MSPS |
| Digital I/O Supply Voltage | — | 3.3 V |
| Power Dissipation | — | 687 mW at 250 MSPS |
| Output Interface | — | DDR LVDS / Parallel CMOS |
| Nombre de broches | — | 48 |
| Terminal Form | — | No Lead (HVQCCN) |