BAT43-TR vs BAT43 Comparaison
Comparaison détaillée côte à côte de BAT43-TR par Vishay Intertechnology et BAT43 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BAT43-TR | BAT43 |
|---|---|---|
| Marque | Vishay Intertechnology | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,03 | $0,08 |
| Device Type | Schottky Barrier Diode (small signal) | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Non-Repetitive Peak Surge Current (IFSM) | 4 A | — |
| Forward Turn-On Voltage | Very low (Schottky junction, per datasheet) | — |
| Switching Speed | Fast (Schottky, no reverse recovery) | — |
| ESD Protection | Integrated guard ring against excessive voltage | Integrated guard ring against excessive voltage |
| Boîtier | DO-204AH (DO-35) axial glass, through-hole | DO-35 (glass axial, through-hole) |
| Type de montage | Through Hole | Through Hole |
| Packaging | Tape & Reel (-TR suffix) | — |
| SMD Variant | Available in SOD-123 case | — |
| Application Class | General purpose | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Dissipation de puissance (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Configuration | — | Single diode |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |