BAT43-TR vs BAT43 Сравнение

Подробное сравнение бок о бок BAT43-TR от Vishay Intertechnology и BAT43 от STMicroelectronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

Vishay Intertechnology
BAT43-TR BAT43-TR - 30V 200mA Schottky Diode DO-35 | Vishay

BAT43-TR - 30V 200mA Schottky Diode DO-35 | Vishay

BAT43-TR ✓ Активен
STMicroelectronics
BAT43 BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 ✓ Активен

Сравнение характеристик

Параметр BAT43-TR BAT43
Бренд Vishay Intertechnology STMicroelectronics
Категория Diodes Diodes
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $0,03 $0,08
Device Type Schottky Barrier Diode (small signal) Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Average Forward Current (IF(AV)) 200 mA —
Non-Repetitive Peak Surge Current (IFSM) 4 A —
Forward Turn-On Voltage Very low (Schottky junction, per datasheet) —
Switching Speed Fast (Schottky, no reverse recovery) —
ESD Protection Integrated guard ring against excessive voltage Integrated guard ring against excessive voltage
Корпус DO-204AH (DO-35) axial glass, through-hole DO-35 (glass axial, through-hole)
Тип монтажа Through Hole Through Hole
Packaging Tape & Reel (-TR suffix) —
SMD Variant Available in SOD-123 case —
Application Class General purpose —
Forward Voltage (VF) [DATA_NEEDED: forward voltage] —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Диапазон рабочих температур [DATA_NEEDED: operating temperature range] —
Статус RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
Рассеиваемая мощность (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
Configuration — Single diode
Рабочая температура — [DATA_NEEDED: operating temperature range]

Даташиты & ресурсы

Все товары Создать BOM Запросить цену