BSC011N03LSTATMA1 vs BSC050N04LSGATMA1 Comparaison
Comparaison détaillée côte à côte de BSC011N03LSTATMA1 par Infineon et BSC050N04LSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC011N03LSTATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | NRND | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,55 | $0,41 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 39 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current IDM] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) typ | 72 nC | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Température de jonction en fonctionnement | -55C to +150C | — |
| Boîtier | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | OptiMOS 3 (trench MOSFET) |
| Configuration | Single with built-in diode | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 |
| Statut RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Plage de température de fonctionnement | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |