BSC011N03LSTATMA1 vs BSC050N04LSGATMA1 비교

다음의 상세 나란히 비교: BSC011N03LSTATMA1 제조: Infineon 및 BSC050N04LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ 활성

사양 비교

파라미터 BSC011N03LSTATMA1 BSC050N04LSGATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 NRND 활성
재고 상태 In Stock In Stock
단가 (USD) $1.55 $0.41
Manufacturer Infineon Technologies —
Series OptiMOS —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 39 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current IDM]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 1.1 mOhm (typical 0.9 mOhm) —
Gate-Source Threshold Voltage VGS(th) typ 2 V —
Gate-Source Voltage (VGS) max +/-20 V —
Total Gate Charge (Qg) typ 72 nC —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
동작 접합 온도 -55C to +150C —
패키지 PG-TDSON-8 FL (8-pin, exposed drain pad) PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
실장 유형 Surface Mount Surface Mount
Technology Trench MOSFET OptiMOS 3 (trench MOSFET)
Configuration Single with built-in diode —
MSL 레벨 [DATA_NEEDED: MSL rating] 1
RoHS 상태 Compliant Compliant
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
동작 온도 범위 — -55C to +150C
Avalanche Energy Rated — Yes (single-pulse avalanche)

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