BSC027N06LS5ATMA1 vs BSZ018NE2LSATMA1 Comparaison
Comparaison détaillée côte à côte de BSC027N06LS5ATMA1 par Infineon et BSZ018NE2LSATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC027N06LS5ATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,66 | $0,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Plage de température de fonctionnement | -55°C to +150°C | -55C to +150C |
| Boîtier / Format | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| Statut RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Product Family | — | OptiMOS 25V |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Boîtier | — | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |
| Sans halogène | — | Yes |