BSC120N03LSGATMA1 vs BSC059N04LSGATMA1 Comparaison
Comparaison détaillée côte à côte de BSC120N03LSGATMA1 par Infineon et BSC059N04LSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | BSC120N03LSGATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,36 | $0,39 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 12 A | — |
| Continuous Drain Current (ID) at Tc=25C | 39 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | — |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 28 W | — |
| Plage de température de fonctionnement | -55C to +150C (TJ) | -55 C to +150 C |
| Boîtier | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant | Compliant |
| Technology | — | OptiMOS 3 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 73 A |
| Continuous Drain Current (ID, Ta=25C) | — | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 5.9 mOhm |
| Power Dissipation (Tc=25C) | — | 50 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | — | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total, typical nC] |
| REACH Status | — | Compliant |
| Channel Type | — | N-Channel |