BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
Référence : BSC120N03LSGATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.91 | $0,91 |
| 10 | $0.82 | $8,20 |
| 100 | $0.68 | $68,00 |
| 500 | $0.55 | $275,00 |
| 1 000 | $0.45 | $450,00 |
| 5 000 | $0.36 | $1 800,00 |
BSC120N03LSGATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to switch or amplify electronic signals in power conversion and motor drive circuits. The OptiMOS 3 family represents Infineon's third-generation 25V-300V N-channel trench MOSFET platform, positioned within the broader power semiconductor taxonomy: power MOSFET -> discrete semiconductor -> power management component. Compared to older planar MOSFET generations, OptiMOS 3 parts deliver lower RDS(on), lower gate charge (Qg), and lower figure-of-merit (FOM = RDS(on) x Qg), enabling higher switching frequencies and smaller magnetics in SMPS designs.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current of 12A at 25C ambient (Ta) rising to 39A at case temperature (Tc), pulsed drain current capability typically rated significantly higher, gate-source voltage (VGS) of +/-20V maximum, and power dissipation of 2.5W (Ta) to 28W (Tc). The PG-TDSON-8-5 (also called SuperSO-8) package provides an exposed thermal pad for low thermal resistance.
Technically, the device uses Infineon's advanced trench MOSFET technology to achieve the industry's lowest on-state resistance per package area in the 30V class. The low gate charge (Qg) reduces driver losses, while the low output charge (Qoss) minimizes switching losses in hard-switched topologies such as synchronous buck converters, OR-ing FETs, and hot-swap circuits.
Typical applications include high-frequency DC-DC converters (synchronous buck and synchronous rectification stages), server and datacom VRM solutions, telecom point-of-load converters, battery management protection circuits, load switches, and motor control. The 30V rating also provides ample headroom for 12V rail switching in industrial and automotive subsystems.
When designing with this part, ensure the gate driver can source/sink sufficient peak current (typically 1-2A) to charge the gate quickly. Use Kelvin-source connection (pin 5 on SuperSO-8) to mitigate source-inductance-induced gate-oscillation, and follow PCB layout guidelines for power MOSFETs (wide copper pours, short gate loops).
This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS 3 family and competitor equivalents, and practical design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour BSC120N03LSGATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BSC120N03LSGATMA1 (même facteur de forme et même empreinte) — différant par Package, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS), Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BSC050N03LSGATMA1
✅ Remplacement direct✓ En stock
$0.36 / unité
Voir la fiche technique →BSC0901NSATMA1
✅ Remplacement direct✓ En stock
$0.78 / unité
Voir la fiche technique →BSC0906NSATMA1
✅ Remplacement direct✓ En stock
$0.48 / unité
Voir la fiche technique →BSC030N03LSGATMA1
✅ Remplacement direct✓ En stock
$0.38 / unité
Voir la fiche technique →BSZ0901NSATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC120N03LSGATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 12 A |
| Continuous Drain Current (ID) at Tc=25C | 39 A |
| Gate-Source Voltage (VGS) max | +/-20 V |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 28 W |
| Plage de température de fonctionnement | -55C to +150C (TJ) |
| Boîtier | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Type de montage | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant |
Configuration des broches de BSC120N03LSGATMA1
| Broche 1 | Source — Source connection (low-side) |
| Broche 2 | Source — Source connection (low-side) |
| Broche 3 | Source — Source connection (low-side) |
| Broche 4 | Gate — Gate drive input |
| Broche 5 | Kelvin Source — Kelvin source for gate-drive return (minimizes source-inductance-induced gate oscillation) |
| Broche 6 | Source — Source connection (low-side) |
| Broche 7 | Source — Source connection (low-side) |
| Broche 8 | Source — Source connection (low-side) |
| Broche PAD | Drain — Drain (exposed thermal pad on bottom of package) |
Zone de fonctionnement sûr (DC)
Applications typiques
BSC120N03LSGATMA1 convient pour 6 applications: Synchronous Buck DC-DC Converters, Server and Datacom VRM Solutions, Telecom Point-of-Load Converters, Battery Management Protection Circuits, Hot-Swap and Load Switch Circuits, Motor Drive and Low-Voltage PWM Control.
Synchronous Buck DC-DC Converters
The BSC120N03LSGATMA1 serves as the low-side synchronous rectifier (SR FET) in 12V-input synchronous buck converters. Its 12 mOhm typical RDS(on) at VGS=10V keeps conduction losses below 1.7W at 12A load, while the OptiMOS 3 platform's low Qg (typical 8-12 nC) and Qoss reduce switching losses at 300 kHz-1 MHz frequencies. Placed on the low-side switch node with a high-side controller FET, it enables >95% peak efficiency in VRM designs. Designers should verify dead-time timing to avoid body-diode conduction and minimize reverse-recovery losses in this position.
Recommandé
Server and Datacom VRM Solutions
The BSC120N03LSGATMA1 is specifically designed for server, datacom, and telecom voltage regulator modules where its 30V VDS rating provides headroom for 12V bus transients and its low RDS(on) x Qg figure-of-merit minimizes total losses in multi-phase VR topologies. In a 6-phase VRM for CPU core rails, each phase can use one BSC120N03LSGATMA1 as the SR FET, distributing thermal load across multiple packages. The PG-TDSON-8-5 footprint with exposed pad supports 28W power dissipation at the case, suitable for high-current multi-phase designs with adequate PCB copper.
Recommandé
Telecom Point-of-Load Converters
In telecom 48V-to- POL (point-of-load) conversion stages, the BSC120N03LSGATMA1 can be used on the secondary side of isolated bus converters or in non-isolated buck stages stepping 12V down to 1-5V for ASICs. Its 30V VDS rating comfortably handles 12V and 24V telecom buses, while the SuperSO-8 footprint enables compact POL modules. The device's 12 mOhm RDS(on) supports 5-10A continuous POL current with manageable thermal rise when paired with adequate PCB copper (1+ square inch of pour recommended).
Recommandé
Battery Management Protection Circuits
The BSC120N03LSGATMA1 functions as a high-side or low-side protection FET in multi-cell Li-ion battery management systems where its 30V VDS rating supports 4S (16.8V max) packs with avalanche margin. Its 12 mOhm RDS(on) limits voltage drop during discharge to approximately 144 mV at 12A, preserving battery runtime. The SuperSO-8 footprint allows compact BMS PCB layouts. Designers should add TVS protection for inductive load switching and verify SOA curves for short-circuit and hot-plug events typical in battery pack designs.
Recommandé
Hot-Swap and Load Switch Circuits
The BSC120N03LSGATMA1 enables inrush-current-limited hot-swap circuits on 12V distributed bus systems, where its 30V rating handles nominal and transient bus voltages and its SOA capability supports linear-mode turn-on at high drain currents. With a gate resistor and soft-start controller, the device transitions from full-VDS linear operation (high dissipation) to fully-enhanced switching as the load capacitance charges. The 12 mOhm RDS(on) minimizes steady-state voltage drop after the hot-swap event completes, suitable for blade-server and telecom shelf applications.
Recommandé
Motor Drive and Low-Voltage PWM Control
In low-voltage brushed DC motor drive and PWM switching applications, the BSC120N03LSGATMA1 handles 12-24V motor supply rails with switching frequencies up to 50 kHz. Its 12 mOhm RDS(on) at 12A delivers torque with minimal voltage drop, while the SuperSO-8 package's 28W Tc-rated dissipation supports continuous motor stall current (within thermal limits). The device pairs well with half-bridge gate drivers for H-bridge motor topologies driving small pumps, fans, and valves in industrial and white-goods applications.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BSC120N03LSGATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BSC050N03LSGATMA1 | BSC0901NSATMA1 | BSC0906NSATMA1 | BSC030N03LSGATMA1 | BSZ0901NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-5 (SuperSO-8) | PG-TDSON-8-5 (SuperSO-8) - same | PG-TDSON-8-5 (SuperSO-8) - same | PG-TDSON-8-5 (SuperSO-8) - same | PG-TDSON-8-5 (SuperSO-8) - same | PG-TSDSON-8 (SuperSO-8) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V - same | 30 V - same | 30 V - same | 30 V - same | 30 V - same |
| On-State Resistance RDS(on) at VGS=10V (typical) | 12 mOhm | 5 mOhm (better) | 9 mOhm (better) | 9 mOhm (better) | 3 mOhm (much better) | 9 mOhm (better) |
| Product Family / Generation | OptiMOS 3 | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 3 - same |
| Pin-to-Pin Compatible | Yes | Yes (drop-in) | Yes (drop-in) | Yes (drop-in) | Yes (drop-in) | Yes (drop-in) |
Principaux différenciateurs
- Best-in-class 30V RDS(on) x area figure-of-merit for SuperSO-8 (vs BSC030N03LSGATMA1 (same family, 3 mOhm))
- Industry-standard SuperSO-8 footprint for design reuse (vs BSZ0901NSATMA1 (PG-TSDSON-8 variant))
- OptiMOS 3 platform - proven reliability and broad ecosystem support (vs BSC015NE2LS5IATMA1 (newer OptiMOS 5 25V))
Notes de conception
At 12A continuous drain current (Ta=25C), the BSC120N03LSGATMA1 dissipates approximately P=I^2 x RDS(on) = 144 x 0.012 = 1.73W. With RthJA of approximately 50 C/W on a standard JEDEC 2s2p test board (estimated: 4-layer FR4 with 1 oz copper), junction temperature rises about 86C above ambient. At higher currents (e.g., 39A at Tc=25C, dissipating approximately 18W), the case-temperature-limited 28W rating applies. For high-current designs, place thermal vias directly under the exposed drain pad (0.3 mm pitch, plugged and plated) to reduce RthJA to 20-30 C/W.
Use the Kelvin-source pin (pin 5) for the gate-driver return path to eliminate source-inductance-induced gate-oscillation. Keep the gate-loop area minimal (<1 cm^2) by routing gate-drive traces on an inner layer adjacent to the source-return plane. Place the gate-driver IC within 5 mm of the FET's gate pin. Use multiple source wires/vias to the source pads (pins 1-3, 6-8) and stitch the exposed drain pad with at least 9 thermal vias (0.3 mm diameter) for heat extraction.
Do not exceed VGS=+/-20V - use a gate-source Zener clamp (typically 12V) on each FET to protect against dv/dt-induced gate overvoltage in bridge topologies. Verify SOA capability for linear-mode operation (hot-swap turn-on) by consulting the SOA curve in the datasheet - the device can sustain DC stress only within the thermal envelope shown. Always add a small (10-100 ohm) gate resistor to damp ringing; values too high (>100 ohm) slow switching and increase losses, values too low (<5 ohm) may cause oscillations.
Estimated switching losses: at 500 kHz with VDS=15V and ID=10A, switching losses approximate Psw = 0.5 x VDS x ID x (trise + tfall) x fsw. Assuming trise/tfall of 10 ns each, Psw = 0.5 x 15 x 10 x 20e-9 x 500e3 = 0.75W per FET. Combined with conduction losses of approximately 1.2W at 10A (10 x 10 x 0.012), total per-FET dissipation is approximately 2W. Use this to size copper area and consider forced-air cooling if multiple FETs are stacked.
Informations de conformité
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial, server, datacom and telecom applications; for automotive designs use Infineon automotive-grade OptiMOS 3 variants.
