BSC123N08NS3GATMA1 vs BSC118N10NSGATMA1 Comparaison
Comparaison détaillée côte à côte de BSC123N08NS3GATMA1 par Infineon et BSC118N10NSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC123N08NS3GATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,71 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Température de jonction en fonctionnement | -55C to +150C | -55 C to +150 C |
| Boîtier | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | — |
| Statut RoHS | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Product Family | — | OptiMOS 2 |
| FET Type | — | N-Channel |
| Mode | — | Enhancement (Normal Level) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Ta=25C | — | 11 A |
| Continuous Drain Current (ID) at Tc=25C | — | 71 A |
| Power Dissipation (PD) at Tc=25C | — | 114 W |
| Technology | — | Trench MOSFET |
| Lead Plating | — | Pb-free |
| Sans halogène | — | Yes |
| JEDEC Qualification | — | Qualified per target application |
| Target Application | — | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |