BSC123N08NS3GATMA1 vs BSC118N10NSGATMA1 Comparison
Detailed side-by-side comparison of BSC123N08NS3GATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveInfineon
BSC118N10NSGATMA1
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC123N08NS3GATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | β |
| Channel Type | N-Channel | β |
| Configuration | Single with built-in body diode | β |
| Maximum Drain-Source Voltage (VDS) | 80 V | β |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | β |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | β |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc) | 66 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | -55 C to +150 C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | β |
| Product Family | β | OptiMOS 2 |
| FET Type | β | N-Channel |
| Mode | β | Enhancement (Normal Level) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Ta=25C | β | 11 A |
| Continuous Drain Current (ID) at Tc=25C | β | 71 A |
| Power Dissipation (PD) at Tc=25C | β | 114 W |
| Technology | β | Trench MOSFET |
| Lead Plating | β | Pb-free |
| Halogen-Free | β | Yes |
| JEDEC Qualification | β | Qualified per target application |
| Target Application | β | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | β | Excellent (per datasheet) |