BSC150N03LDGATMA1 vs BSC059N04LS6ATMA1 Comparaison
Comparaison détaillée côte à côte de BSC150N03LDGATMA1 par Infineon et BSC059N04LS6ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | BSC150N03LDGATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,46 | $0,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel MOSFET Array (half-bridge) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ TA=25C | 20 A | — |
| Continuous Drain Current (Id) @ TA=70C | [DATA_NEEDED: Id at TA=70C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | — |
| On-State Resistance (Rds(on)) @ Vgs=10V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg nC] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: typical Qgd nC] | — |
| Output Charge (Qoss) | [DATA_NEEDED: typical Qoss nC] | — |
| Power Dissipation (Pd) | 26 W | — |
| Température de jonction en fonctionnement | -55C to +150C | — |
| Boîtier | PG-TDSON-8-4 (5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 | — |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Yes | — |
| Technology | — | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Plage de température de fonctionnement | — | -55C to +150C |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |