BSC150N03LDGATMA1 vs BSC059N04LS6ATMA1 Comparação
Comparação detalhada lado a lado de BSC150N03LDGATMA1 por Infineon e BSC059N04LS6ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | BSC150N03LDGATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,46 | $0,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel MOSFET Array (half-bridge) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ TA=25C | 20 A | — |
| Continuous Drain Current (Id) @ TA=70C | [DATA_NEEDED: Id at TA=70C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | — |
| On-State Resistance (Rds(on)) @ Vgs=10V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg nC] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: typical Qgd nC] | — |
| Output Charge (Qoss) | [DATA_NEEDED: typical Qoss nC] | — |
| Power Dissipation (Pd) | 26 W | — |
| Temperatura de junção de operação | -55C to +150C | — |
| Encapsulamento | PG-TDSON-8-4 (5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Livre de halogênio | Yes | — |
| Technology | — | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Faixa de temperatura de operação | — | -55C to +150C |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |