BSO150N03MDGXUMA1 vs IRF8736PBF Comparaison
Comparaison détaillée côte à côte de BSO150N03MDGXUMA1 par Infineon et IRF8736PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | BSO150N03MDGXUMA1 | IRF8736PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,37 | $0,45 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSO150N03MDGXUMA1 | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS 3M (30V trench MOSFET) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max per channel | 9.3 A | — |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | — |
| Power Dissipation (PD) max | 1.4 W | — |
| Plage de température de fonctionnement | -55C to +150C | -55°C to +150°C (junction) |
| Boîtier | PG-DSO-8 (SO-8 with exposed pad) | SO-8 (8-SO) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (unlimited) | 1 (Unlimited) |
| Statut RoHS | Compliant | — |
| Channel Configuration | Dual N-Channel (independent) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TA=70°C | — | [DATA_NEEDED: ID at TA=70°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) at VGS=10V | — | 4.8 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | 6.0 mΩ (typical) |
| Gate-Source Threshold Voltage VGS(th) | — | Logic-level (optimized for 5 V drive) |
| Total Gate Charge Qg | — | 17 nC (typical) |
| Maximum Power Dissipation at TA=25°C | — | 2.5 W |
| RoHS / Lead-Free | — | Lead-Free, RoHS3 Compliant |
| Qualification Standard | — | JEDEC |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage and current) |