BSO150N03MDGXUMA1 vs IRF8736PBF Comparison

Detailed side-by-side comparison of BSO150N03MDGXUMA1 by Infineon and IRF8736PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSO150N03MDGXUMA1 IRF8736PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.37 $0.45
Manufacturer Infineon Technologies β€”
Part Number BSO150N03MDGXUMA1 β€”
Product Type Dual N-Channel MOSFET Array β€”
Technology OptiMOS 3M (30V trench MOSFET) β€”
Drain-Source Voltage (VDS) max 30 V β€”
Continuous Drain Current (ID) max per channel 9.3 A β€”
On-State Resistance (RDS(on)) max 15 mOhm at VGS=10V β€”
Gate-Source Voltage (VGS) max 20 V β€”
Gate Threshold Voltage (VGS(th)) typ 1.0 V β€”
Power Dissipation (PD) max 1.4 W β€”
Operating Temperature Range -55C to +150C -55Β°C to +150Β°C (junction)
Package PG-DSO-8 (SO-8 with exposed pad) SO-8 (8-SO)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1 (Unlimited)
RoHS Status Compliant β€”
Channel Configuration Dual N-Channel (independent) β€”
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at TA=25Β°C β€” 18 A
Continuous Drain Current (ID) at TA=70Β°C β€” [DATA_NEEDED: ID at TA=70Β°C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) at VGS=10V β€” 4.8 mΞ©
On-Resistance RDS(on) at VGS=4.5V β€” 6.0 mΞ© (typical)
Gate-Source Threshold Voltage VGS(th) β€” Logic-level (optimized for 5 V drive)
Total Gate Charge Qg β€” 17 nC (typical)
Maximum Power Dissipation at TA=25Β°C β€” 2.5 W
RoHS / Lead-Free β€” Lead-Free, RoHS3 Compliant
Qualification Standard β€” JEDEC
Avalanche Rated β€” Yes (fully characterized avalanche voltage and current)

Datasheets & Resources

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