BSZ018NE2LSATMA1 vs BSZ018NE2LSIATMA1 Comparaison
Comparaison détaillée côte à côte de BSZ018NE2LSATMA1 par Infineon et BSZ018NE2LSIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSZ018NE2LSATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,31 | $0,39 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | OptiMOS (Infineon trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Plage de température de fonctionnement | -55C to +150C | -55 C to +150 C |
| Boîtier | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Sans halogène | Yes | — |
| Part Number | — | BSZ018NE2LSIATMA1 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 22 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | — | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 69 W |