BSZ018NE2LSATMA1 vs BSZ018NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ018NE2LSATMA1 by Infineon and BSZ018NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ018NE2LSATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.31 | $0.39 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | β |
| Technology | N-Channel Trench MOSFET | OptiMOS (Infineon trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (TA) | 23 A | β |
| Continuous Drain Current (TC) | 40 A | β |
| Power Dissipation (TA) | 2.1 W | β |
| Power Dissipation (TC) | 69 W | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C |
| Package | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| Part Number | β | BSZ018NE2LSIATMA1 |
| Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 22 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | β | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 69 W |