BSZ0501NSIATMA1 vs BSC0502NSIATMA1 Comparaison
Comparaison détaillée côte à côte de BSZ0501NSIATMA1 par Infineon et BSC0502NSIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ ActifComparaison des spécifications
| Paramètre | BSZ0501NSIATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,29 | $0,85 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| Boîtier | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TDSON-8 (SuperSO8 5x6) |
| Type de montage | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Plage de température de fonctionnement | [DATA_NEEDED: Tj max] | -55C to +150C |
| Statut RoHS | Compliant | Compliant |
| Technology | — | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Continuous Drain Current (ID) at TA | — | 26 A |
| RDS(on) Max at VGS=10V | — | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | — | 9.0 nC |
| Output Charge QOSS Typ | — | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | — | 2.5 W |
| Power Dissipation at TC (Tc=25C) | — | 43 W |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |