BSZ0501NSIATMA1 vs BSC0502NSIATMA1 Сравнение
Подробное сравнение бок о бок BSZ0501NSIATMA1 от Infineon и BSC0502NSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSZ0501NSIATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,29 | $0,85 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| Корпус | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TDSON-8 (SuperSO8 5x6) |
| Тип монтажа | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Диапазон рабочих температур | [DATA_NEEDED: Tj max] | -55C to +150C |
| Статус RoHS | Compliant | Compliant |
| Technology | — | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Continuous Drain Current (ID) at TA | — | 26 A |
| RDS(on) Max at VGS=10V | — | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | — | 9.0 nC |
| Output Charge QOSS Typ | — | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | — | 2.5 W |
| Power Dissipation at TC (Tc=25C) | — | 43 W |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |