CGD65B240SH2 vs CGD65B200S2 Comparaison
Comparaison détaillée côte à côte de CGD65B240SH2 par Cambridge GaN Devices et CGD65B200S2 par Cambridge GaN Devices. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Cambridge GaN Devices
CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
CGD65B240SH2 ✓ ActifCambridge GaN Devices
CGD65B200S2 - 650V 200mΩ ICeGaN™ GaN HEMT | Cambridge GaN Devices
CGD65B200S2 ✓ ActifComparaison des spécifications
| Paramètre | CGD65B240SH2 | CGD65B200S2 |
|---|---|---|
| Marque | Cambridge GaN Devices | Cambridge GaN Devices |
| Catégorie | MOSFETs | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,10 | $1,70 |
| Type de transistor | N-Channel GaN HEMT, enhancement mode | — |
| Drain-Source Voltage (V_DS,max) | 650 V | — |
| On-Resistance (R_DS(on)) | 55 mΩ (typical, per datasheet title block) | — |
| Continuous Drain Current (I_D) | 7 A (per DigiKey listing) | [DATA_NEEDED: continuous drain current] |
| Gate Technology | ICeGaN® (gate-injection, 0-20 V drive) | ICeGaN™ (gate input circuit on chip) |
| Current Sense Pin | Yes (integrated, shunt-free) | — |
| NL³ Circuit | Yes (integrated non-linear loss-less circuit) | — |
| Boîtier | 8-DFN (5x6 mm) surface mount with thermal pad | 8-PowerVDFN (DFN5x6) |
| Type de montage | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Process Technology | GaN-on-silicon (GaN-on-Si) | — |
| Operating Mode | Enhancement mode (normally-off) | Enhancement mode (normally-off) |
| Switching Frequency (typical app) | 200 kHz - 500 kHz (per CGD reference designs) | — |
| Typical Application | 65 W quasi-resonant flyback, PFC, SMPS | — |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Compliance | [DATA_NEEDED: specific RoHS/REACH documentation] | — |
| Part Family | — | ICeGaN™ |
| Device Type | — | Enhancement-mode GaN-on-Si HEMT |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Typical R_DS(on) | — | 200 mΩ |
| Gate Drive (V_GS) | — | 12 V (typical) |
| Material | — | GaN-on-Silicon |
| Polarity | — | N-Channel |
| Reel Variant | — | CGD65B200S2-T13 (Tape & Reel) |
| Statut RoHS | — | Compliant |