CGD65B240SH2 vs CGD65B200S2 Сравнение
Подробное сравнение бок о бок CGD65B240SH2 от Cambridge GaN Devices и CGD65B200S2 от Cambridge GaN Devices. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Cambridge GaN Devices
CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
CGD65B240SH2 ✓ АктивенCambridge GaN Devices
CGD65B200S2 - 650V 200mΩ ICeGaN™ GaN HEMT | Cambridge GaN Devices
CGD65B200S2 ✓ АктивенСравнение характеристик
| Параметр | CGD65B240SH2 | CGD65B200S2 |
|---|---|---|
| Бренд | Cambridge GaN Devices | Cambridge GaN Devices |
| Категория | MOSFETs | Transistors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,10 | $1,70 |
| Тип транзистора | N-Channel GaN HEMT, enhancement mode | — |
| Drain-Source Voltage (V_DS,max) | 650 V | — |
| On-Resistance (R_DS(on)) | 55 mΩ (typical, per datasheet title block) | — |
| Continuous Drain Current (I_D) | 7 A (per DigiKey listing) | [DATA_NEEDED: continuous drain current] |
| Gate Technology | ICeGaN® (gate-injection, 0-20 V drive) | ICeGaN™ (gate input circuit on chip) |
| Current Sense Pin | Yes (integrated, shunt-free) | — |
| NL³ Circuit | Yes (integrated non-linear loss-less circuit) | — |
| Корпус | 8-DFN (5x6 mm) surface mount with thermal pad | 8-PowerVDFN (DFN5x6) |
| Тип монтажа | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Process Technology | GaN-on-silicon (GaN-on-Si) | — |
| Operating Mode | Enhancement mode (normally-off) | Enhancement mode (normally-off) |
| Switching Frequency (typical app) | 200 kHz - 500 kHz (per CGD reference designs) | — |
| Typical Application | 65 W quasi-resonant flyback, PFC, SMPS | — |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Compliance | [DATA_NEEDED: specific RoHS/REACH documentation] | — |
| Part Family | — | ICeGaN™ |
| Device Type | — | Enhancement-mode GaN-on-Si HEMT |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Typical R_DS(on) | — | 200 mΩ |
| Gate Drive (V_GS) | — | 12 V (typical) |
| Material | — | GaN-on-Silicon |
| Polarity | — | N-Channel |
| Reel Variant | — | CGD65B200S2-T13 (Tape & Reel) |
| Статус RoHS | — | Compliant |